Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750364
M. Schweiger, W. Herrmann
The electrical stability is an important factor for the energy yield performance of PV modules. To make a precise energy yield prediction possible the effects must be studied and understood. For crystalline silicon PV modules typically linear degradation rates per year are stated. For other PV module technologies metastable performance behaviour can be observed. These effects can affect the short circuit current, the open circuit voltage and the nominal power or fill factor. The range of the effect can be dependent on the environmental conditions of the PV system. Since 2013 a selection of 15 PV modules of different technologies were studied under 5 climatic conditions using adopted I-V curve correction formulas.
{"title":"Electrical stability of PV modules in different climates","authors":"M. Schweiger, W. Herrmann","doi":"10.1109/PVSC.2016.7750364","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750364","url":null,"abstract":"The electrical stability is an important factor for the energy yield performance of PV modules. To make a precise energy yield prediction possible the effects must be studied and understood. For crystalline silicon PV modules typically linear degradation rates per year are stated. For other PV module technologies metastable performance behaviour can be observed. These effects can affect the short circuit current, the open circuit voltage and the nominal power or fill factor. The range of the effect can be dependent on the environmental conditions of the PV system. Since 2013 a selection of 15 PV modules of different technologies were studied under 5 climatic conditions using adopted I-V curve correction formulas.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"68 1","pages":"3685-3687"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83185024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750103
Yuguo Tao, V. Upadhyaya, Ying-Yuan Huang, Chia-Wei Chen, Keenan I. Jones, A. Rohatgi
This paper presents a thermally stable carrier selective back contact for high-efficiency large-area n-type Si solar cells with screen-printed front contact on homogeneous emitter. Our passivated contact structure is based on an ultra-thin (~15Å) tunnel oxide capped with phosphorus doped n+ poly-Si. It is shown that a proper precursor PH3/SiH4 ratio and an appropriate crystallization and dopant activation anneal temperature are vital to obtain excellent interface passivation quality with an implied open-circuit voltage (iVoc) of 728 mV and corresponding back-surface-fleld saturation current density (iJ0b') of ≤ 5 fA/cm2. It is found that the tunnel oxide is a critical part of this carrier selective contact, and its absence can result in ~125 mV drop in iVoc. Cell efficiency of 21.4% was achieved on 239 cm2 commercial grade n-type Cz wafers with screen-printed and fired Ag/Al front contact on ion-implanted homogeneous boron emitter. Detailed analysis of this cell shows that efficiency of this cell is mainly limited by the recombination at the front metal/p+ contacts. Our 2-dimentional simulations show that applying fine-line metallization on selectively doped boron emitter can raise this cell efficiency to over 22.5%.
{"title":"Carrier selective tunnel oxide passivated contact enabling 21.4% efficient large-area N-type silicon solar cells","authors":"Yuguo Tao, V. Upadhyaya, Ying-Yuan Huang, Chia-Wei Chen, Keenan I. Jones, A. Rohatgi","doi":"10.1109/PVSC.2016.7750103","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750103","url":null,"abstract":"This paper presents a thermally stable carrier selective back contact for high-efficiency large-area n-type Si solar cells with screen-printed front contact on homogeneous emitter. Our passivated contact structure is based on an ultra-thin (~15Å) tunnel oxide capped with phosphorus doped n+ poly-Si. It is shown that a proper precursor PH3/SiH4 ratio and an appropriate crystallization and dopant activation anneal temperature are vital to obtain excellent interface passivation quality with an implied open-circuit voltage (iVoc) of 728 mV and corresponding back-surface-fleld saturation current density (iJ0b') of ≤ 5 fA/cm2. It is found that the tunnel oxide is a critical part of this carrier selective contact, and its absence can result in ~125 mV drop in iVoc. Cell efficiency of 21.4% was achieved on 239 cm2 commercial grade n-type Cz wafers with screen-printed and fired Ag/Al front contact on ion-implanted homogeneous boron emitter. Detailed analysis of this cell shows that efficiency of this cell is mainly limited by the recombination at the front metal/p+ contacts. Our 2-dimentional simulations show that applying fine-line metallization on selectively doped boron emitter can raise this cell efficiency to over 22.5%.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"37 1","pages":"2531-2535"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84769811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749564
Clifford W. Hansen, J. Stein, C. Deline, S. MacAlpine, B. Marion, A. Asgharzadeh, F. Toor
We describe and compare two methods for modeling irradiance on the back surface of rack-mounted bifacial PV modules: view factor models and ray-tracing simulations. For each method we formulate one or more models and compare each model with irradiance measurements and short circuit current for a bifacial module mounted a fixed tilt rack with three other similarly sized modules. Our analysis illustrates the computational requirements of the different methods and provides insight into their practical applications. We find a level of consistency among the models which indicates that consistent models may be obtained by parameter calibrations.
{"title":"Analysis of irradiance models for bifacial PV modules","authors":"Clifford W. Hansen, J. Stein, C. Deline, S. MacAlpine, B. Marion, A. Asgharzadeh, F. Toor","doi":"10.1109/PVSC.2016.7749564","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749564","url":null,"abstract":"We describe and compare two methods for modeling irradiance on the back surface of rack-mounted bifacial PV modules: view factor models and ray-tracing simulations. For each method we formulate one or more models and compare each model with irradiance measurements and short circuit current for a bifacial module mounted a fixed tilt rack with three other similarly sized modules. Our analysis illustrates the computational requirements of the different methods and provides insight into their practical applications. We find a level of consistency among the models which indicates that consistent models may be obtained by parameter calibrations.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"56 1","pages":"0138-0143"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90948540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750264
Kapil Muddineni, P. Chamarthi, V. Agarwal
This paper proposes a new multiple input DC-DC converter for PV fed DC micro-grid system. The proposed configuration based on series connection of inverting CUK converters, utilizes free-wheeling diode as a by-pass diode. Hence, it can operate either individually or simultaneously depending on availability of input sources. Other salient features of this proposed converter include inherent-voltage boosting capability due to series combination of CUK converters and reduction in additional filtering requirement to filter out high frequency harmonics. The proposed configuration is verified through MATLAB simulations at 500W level. It is suitable for implementing DMPPT of PV modules.
{"title":"A new solar PV fed multiple-input DC-DC converter for DC micro grid application","authors":"Kapil Muddineni, P. Chamarthi, V. Agarwal","doi":"10.1109/PVSC.2016.7750264","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750264","url":null,"abstract":"This paper proposes a new multiple input DC-DC converter for PV fed DC micro-grid system. The proposed configuration based on series connection of inverting CUK converters, utilizes free-wheeling diode as a by-pass diode. Hence, it can operate either individually or simultaneously depending on availability of input sources. Other salient features of this proposed converter include inherent-voltage boosting capability due to series combination of CUK converters and reduction in additional filtering requirement to filter out high frequency harmonics. The proposed configuration is verified through MATLAB simulations at 500W level. It is suitable for implementing DMPPT of PV modules.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"23 1","pages":"3237-3241"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89478325","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749738
K. Kang, Byong-Ryol Kim, Sanghwan Park, Sung-Tae Chang
In recent years several failure modes of PV modules operated under high potentials were observed. Most dominant degradation mechanism is called “potential induced degradation (PID)” of crystalline PV modules [1]. PID test as proposed by the IEC working group does not reflect on particular modules. As a consequence, they do not fulfill the requirements of a lifetime warranty test [2]. Especially, it is not reflect the recovery characteristics of the solar cell. In this study we have focused on the lifetime test method considering the recovery characteristics of the n-type mono crystalline solar cell. The sensitivity of the modules regarding potential induced power degradation was investigated with respect to the recovery behavior under illumination. Positive as well as negative potential to ground was considered. The test was divided in two parts. First, a PID test was performed according to IEC TS 62804 ed. 1, method a. Then, a special PID-/ light-recovery sequence was performed.
{"title":"Lifetime warranty test method considering potential induced degradation recovery behavior","authors":"K. Kang, Byong-Ryol Kim, Sanghwan Park, Sung-Tae Chang","doi":"10.1109/PVSC.2016.7749738","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749738","url":null,"abstract":"In recent years several failure modes of PV modules operated under high potentials were observed. Most dominant degradation mechanism is called “potential induced degradation (PID)” of crystalline PV modules [1]. PID test as proposed by the IEC working group does not reflect on particular modules. As a consequence, they do not fulfill the requirements of a lifetime warranty test [2]. Especially, it is not reflect the recovery characteristics of the solar cell. In this study we have focused on the lifetime test method considering the recovery characteristics of the n-type mono crystalline solar cell. The sensitivity of the modules regarding potential induced power degradation was investigated with respect to the recovery behavior under illumination. Positive as well as negative potential to ground was considered. The test was divided in two parts. First, a PID test was performed according to IEC TS 62804 ed. 1, method a. Then, a special PID-/ light-recovery sequence was performed.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"35 1","pages":"0894-0898"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89847705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750324
Natasha E. Hjerrild, Sara Mesgari, F. Crisostomo, J. Scott, R. Amal, R. Taylor
The thermal yield of hybrid photovoltaic/ thermal (PV/T) collectors is presently limited to low temperatures to prevent degradation of PV efficiency and thermal damage to the cells. This work reports a nanofluid optical filter, which transmits only the portion of the solar spectrum which is most efficiently converted to electricity by the underlying solar cell. This is achieved by suspending both core-shell silver-silica nanodiscs (Ag-SiO2 NDs) and gold nanorods (AuNRs) in an aqueous base fluid to absorb visible light and infrared wavelengths, respectively. The transmission spectrum of each nanofluid can be tailored according to PV cell spectral response and to accommodate for electricity and gas price fluctuations.
{"title":"Spectrum splitting using gold and silver nanofluids for photovoltaic/thermal collectors","authors":"Natasha E. Hjerrild, Sara Mesgari, F. Crisostomo, J. Scott, R. Amal, R. Taylor","doi":"10.1109/PVSC.2016.7750324","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750324","url":null,"abstract":"The thermal yield of hybrid photovoltaic/ thermal (PV/T) collectors is presently limited to low temperatures to prevent degradation of PV efficiency and thermal damage to the cells. This work reports a nanofluid optical filter, which transmits only the portion of the solar spectrum which is most efficiently converted to electricity by the underlying solar cell. This is achieved by suspending both core-shell silver-silica nanodiscs (Ag-SiO2 NDs) and gold nanorods (AuNRs) in an aqueous base fluid to absorb visible light and infrared wavelengths, respectively. The transmission spectrum of each nanofluid can be tailored according to PV cell spectral response and to accommodate for electricity and gas price fluctuations.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"42 1","pages":"3518-3523"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78225972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749757
S. Killinger, Bjorn Muller, Y. Saint-Drenan, R. McKenna
The installed capacity of PV plants has increased dramatically in the past years. A common approach to determine the actual power of an ensemble of PV systems within a specific region typically employs data from measured reference plants. Obviously the precision of the power estimation depends on having representative reference plants, which are not influenced by strong individual characteristics. The goal of this contribution is to detect such apparently atypical behavior of PV systems by comparing their measured power to simulations based on a nearby weather station and clear sky irradiance. Deviations are studied in the course of each day for the year 2012 and 48 PV systems, indicating systematic characteristics independent from meteorological conditions. Additionally, an approach is presented to detect such unexpected deviations automatically. This can be the basis for a dynamic nowcasting algorithm, which selects the reference units based on their (temporal) suitability.
{"title":"Towards an improved nowcasting method by evaluating power profiles of PV systems to detect apparently atypical behavior","authors":"S. Killinger, Bjorn Muller, Y. Saint-Drenan, R. McKenna","doi":"10.1109/PVSC.2016.7749757","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749757","url":null,"abstract":"The installed capacity of PV plants has increased dramatically in the past years. A common approach to determine the actual power of an ensemble of PV systems within a specific region typically employs data from measured reference plants. Obviously the precision of the power estimation depends on having representative reference plants, which are not influenced by strong individual characteristics. The goal of this contribution is to detect such apparently atypical behavior of PV systems by comparing their measured power to simulations based on a nearby weather station and clear sky irradiance. Deviations are studied in the course of each day for the year 2012 and 48 PV systems, indicating systematic characteristics independent from meteorological conditions. Additionally, an approach is presented to detect such unexpected deviations automatically. This can be the basis for a dynamic nowcasting algorithm, which selects the reference units based on their (temporal) suitability.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"59 1","pages":"0980-0985"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78326317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749586
Thad Druffel Brandon Lavery, K. Ankireddy
Perovskite solar cells utilizing a two step deposited CH3NH3PbI3 thin film were rapidly sintered using an intense pulsed light (IPL) source. The IPL process is a rapid heat treatment that has been used to process a methylammonium lead iodide perovskite thin film creating large crystal sizes approaching 1 micron without sacrificing surface coverage. Solar cells with an average efficiency of 11.5% and a champion device of 12.3% are reported. The methylammonium lead iodide perovskite was subjected to 2000 Joules of energy in a 2 ms pulse of light generated by a xenon lamp, resulting in temperatures significantly exceeding the degradation temperature of 150 °C. The significance of the IPL process is the capability to process large areas (over 60 cm2) almost instantaneously.
{"title":"Rapid processing by intense pulsed light of a CH3NH3PbI3 perovskite thin film for photovoltaics","authors":"Thad Druffel Brandon Lavery, K. Ankireddy","doi":"10.1109/PVSC.2016.7749586","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749586","url":null,"abstract":"Perovskite solar cells utilizing a two step deposited CH3NH3PbI3 thin film were rapidly sintered using an intense pulsed light (IPL) source. The IPL process is a rapid heat treatment that has been used to process a methylammonium lead iodide perovskite thin film creating large crystal sizes approaching 1 micron without sacrificing surface coverage. Solar cells with an average efficiency of 11.5% and a champion device of 12.3% are reported. The methylammonium lead iodide perovskite was subjected to 2000 Joules of energy in a 2 ms pulse of light generated by a xenon lamp, resulting in temperatures significantly exceeding the degradation temperature of 150 °C. The significance of the IPL process is the capability to process large areas (over 60 cm2) almost instantaneously.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"51 1","pages":"0238-0241"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72996418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749699
Teng-Yu Wang, Wen-Jong Lih, Cheng-Yao Cheng, J. Liu, Wen-Hsin Lin
Silicon wafers sliced with diamond wire saw and SiC slurry are compared in this study. Diamond wire saw have high slicing speed and the cost is lower than slurry cut process. However it is not suitable for multi-crystalline wafer slicing process. In this study, a surface treatment process was used on the diamond wire cut multi-crystalline silicon wafer. With the modification of wafer surface, the surface quality and solar cell characteristics could be improved. The energy conversion efficiency was increased from 17.7% to 18.4%, which is comparable to the solar cell from conventional slurry cut. Furthermore, there is a decline in wafering cost.
{"title":"Surface treatment for multi-crystalline silicon wafer sliced by diamond wire saw","authors":"Teng-Yu Wang, Wen-Jong Lih, Cheng-Yao Cheng, J. Liu, Wen-Hsin Lin","doi":"10.1109/PVSC.2016.7749699","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749699","url":null,"abstract":"Silicon wafers sliced with diamond wire saw and SiC slurry are compared in this study. Diamond wire saw have high slicing speed and the cost is lower than slurry cut process. However it is not suitable for multi-crystalline wafer slicing process. In this study, a surface treatment process was used on the diamond wire cut multi-crystalline silicon wafer. With the modification of wafer surface, the surface quality and solar cell characteristics could be improved. The energy conversion efficiency was increased from 17.7% to 18.4%, which is comparable to the solar cell from conventional slurry cut. Furthermore, there is a decline in wafering cost.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"126 1","pages":"0733-0736"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73134085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750178
M. Boccard, N. Rodkey, Z. Holman
We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.
{"title":"Properties of hydrogenated indium oxide prepared by reactive sputtering with hydrogen gas","authors":"M. Boccard, N. Rodkey, Z. Holman","doi":"10.1109/PVSC.2016.7750178","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750178","url":null,"abstract":"We investigate the possibility of fabricating high-mobility hydrogen-doped indium oxide (IO:H) using gaseous hydrogen instead of water vapor during sputtering. A sputtering tool equipped with a residual gas analyzer allows us to monitor the partial pressure of H2, O2 and H2O in the system, and to link the gas composition to the properties of the deposited films. Films with mobilities as high as 90 cm2/Vs and carrier densities of 2.1020 cm-3 (after annealing) were obtained when low hydrogen content was introduced (partial pressure of 4.10-6 mbar) together with argon and oxygen. Increasing the content of hydrogen prove detrimental to the transparency of the film as well as to the electrical properties, as well as the absence of hydrogen.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"71 1","pages":"2868-2870"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74232943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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