Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749563
A. Louwen, A. D. de Waal, W. V. van Sark
In studies analyzing the performance of photovoltaic (PV) modules, average photon energy (APE) is often used as an indicator for the effect of solar spectral variation on PV module performance, as it is said to accurately distinguish individual spectra. Especially for a-Si devices, there is a strong correlation between APE and performance. However, there can be significant variation in spectra measured at specific APE values. In this study we analyze the variation of spectra at a range of APE values, and also compare APE as an indicator of spectra to other spectral indicators, namely Blue Fraction (BF), Useful Fraction (UF), Airmass (AM) and Spectral Mismatch Factor (MMF). We compare the indicators by binning spectra at different values of each parameter, and calculating the Root-Mean-Square-Deviation (RMSD) of all spectra in the bin to the mean spectrum in the bin. Subsequently, we compare these calculated results between the different parameters Our results indicate that APE was found the best indicator of spectral variation, with the lowest mean RMSD over the whole range of measured data. However, BF is an almost equally good indicator, and UF and MMF also show a low mean RMSD. Airmass was found to be a quite poor indicator of spectral variation.
{"title":"Evaluation of different indicators for representing solar spectral variation","authors":"A. Louwen, A. D. de Waal, W. V. van Sark","doi":"10.1109/PVSC.2016.7749563","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749563","url":null,"abstract":"In studies analyzing the performance of photovoltaic (PV) modules, average photon energy (APE) is often used as an indicator for the effect of solar spectral variation on PV module performance, as it is said to accurately distinguish individual spectra. Especially for a-Si devices, there is a strong correlation between APE and performance. However, there can be significant variation in spectra measured at specific APE values. In this study we analyze the variation of spectra at a range of APE values, and also compare APE as an indicator of spectra to other spectral indicators, namely Blue Fraction (BF), Useful Fraction (UF), Airmass (AM) and Spectral Mismatch Factor (MMF). We compare the indicators by binning spectra at different values of each parameter, and calculating the Root-Mean-Square-Deviation (RMSD) of all spectra in the bin to the mean spectrum in the bin. Subsequently, we compare these calculated results between the different parameters Our results indicate that APE was found the best indicator of spectral variation, with the lowest mean RMSD over the whole range of measured data. However, BF is an almost equally good indicator, and UF and MMF also show a low mean RMSD. Airmass was found to be a quite poor indicator of spectral variation.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"78 1","pages":"0133-0137"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81210146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-11-18DOI: 10.1109/PVSC.2016.7749885
Matei-Ion Oprea, S. Spataru, D. Sera, P. Poulsen, Sune Thorsteinsson, R. Basu, A. R. Andersen, Kenn H. B. Frederiksen
Impedance spectroscopy (IS) is an established characterization and diagnostic method for different electrical and chemical research areas such as batteries and fuel cells, but not yet widely adopted for photovoltaics (PV). This work, for the first time, investigates an IS based method for detecting potential-induced degradation (PID) in c-Si PV panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging. The results confirm the effectiveness of the new approach to identify PID in PV panels.
{"title":"Detection of potential induced degradation in c-Si PV panels using electrical impedance spectroscopy","authors":"Matei-Ion Oprea, S. Spataru, D. Sera, P. Poulsen, Sune Thorsteinsson, R. Basu, A. R. Andersen, Kenn H. B. Frederiksen","doi":"10.1109/PVSC.2016.7749885","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749885","url":null,"abstract":"Impedance spectroscopy (IS) is an established characterization and diagnostic method for different electrical and chemical research areas such as batteries and fuel cells, but not yet widely adopted for photovoltaics (PV). This work, for the first time, investigates an IS based method for detecting potential-induced degradation (PID) in c-Si PV panels. The method has been experimentally tested on a set of panels that were confirmed to be affected by PID by using traditional current-voltage (I-V) characterization methods, as well as electroluminescence (EL) imaging. The results confirm the effectiveness of the new approach to identify PID in PV panels.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"1 1","pages":"1575-1579"},"PeriodicalIF":0.0,"publicationDate":"2016-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88471951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-16DOI: 10.1109/PVSC.2016.7749728
Ryan E. Brock, David C. Miller, R. Dauskardt
The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 8 J/m2 were measured. Damp Heat (85 °C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even with germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.
{"title":"Adhesion of antireflective coatings in multijunction photovoltaics","authors":"Ryan E. Brock, David C. Miller, R. Dauskardt","doi":"10.1109/PVSC.2016.7749728","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749728","url":null,"abstract":"The development of a new composite dual cantilever beam (cDCB) thin-film adhesion testing method is reported, which allows the measurement of adhesion on the fragile thin substrates used in multijunction photovoltaics. We address the adhesion of several antireflective coating systems on multijunction cells. By varying interface chemistry and morphology, we demonstrate the ensuing effects on adhesion and help to develop an understanding of how high adhesion can be achieved, as adhesion values ranging from 0.5 J/m2 to 8 J/m2 were measured. Damp Heat (85 °C/85% RH) was used to invoke degradation of interfacial adhesion. We show that even with germanium substrates that fracture easily, quantitative measurements of adhesion can still be made at high test yield. The cDCB test is discussed as an important new methodology, which can be broadly applied to any system that makes use of thin, brittle, or otherwise fragile substrates.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"39 1","pages":"0850-0853"},"PeriodicalIF":0.0,"publicationDate":"2016-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74814140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-16DOI: 10.1109/PVSC.2016.7749600
I. Repins, L. Mansfield, A. Kanevce, S. Jensen, D. Kuciauskas, Stephen Glynn, T. Barnes, W. Metzger, J. Burst, Chunsheng Jiang, P. Dippo, S. Harvey, G. Teeter, C. Perkins, B. Egaas, A. Zakutayev, Jan-Hendrik Alsmeier, Thomas Lusky, L. Korte, R. Wilks, M. Bar, Yanfa Yan, S. Lany, P. Zawadzki, Ji-Sang Park, S. Wei
Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.
{"title":"Wild band edges: The role of bandgap grading and band-edge fluctuations in high-efficiency chalcogenide devices","authors":"I. Repins, L. Mansfield, A. Kanevce, S. Jensen, D. Kuciauskas, Stephen Glynn, T. Barnes, W. Metzger, J. Burst, Chunsheng Jiang, P. Dippo, S. Harvey, G. Teeter, C. Perkins, B. Egaas, A. Zakutayev, Jan-Hendrik Alsmeier, Thomas Lusky, L. Korte, R. Wilks, M. Bar, Yanfa Yan, S. Lany, P. Zawadzki, Ji-Sang Park, S. Wei","doi":"10.1109/PVSC.2016.7749600","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749600","url":null,"abstract":"Band-edge effects - including grading, electrostatic fluctuations, bandgap fluctuations, and band tails - affect chalcogenide device efficiency. These effects now require more careful consideration as efficiencies increase beyond 20%. Several aspects of the relationships between band-edge phenomena and device performance for NREL absorbers are examined. For Cu(In, Ga)Se2 devices, recent increases in diffusion length imply changes to the optimum bandgap profile. The origin, impact, and modification of electrostatic and bandgap fluctuations are also discussed. The application of the same principles to devices based on CdTe, kesterites, and emerging absorbers (Cu2SnS3, CuSbS2), considering differences in materials properties, is examined.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"28 1","pages":"0309-0314"},"PeriodicalIF":0.0,"publicationDate":"2016-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81763401","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749663
T. Masuda, K. Araki, K. Okumura, S. Urabe, Yukinori Kudo, Kazutaka Kimura, Takashi Nakado, Akinori Sato, M. Yamaguchi
We investigate the benefits of utilizing solar power as an energy source for future automobiles. Since there are strict emission standards developed by governments, we must find an alternative energy source for the future automobiles. We show that replacing all passenger cars with hybrid vehicles equipped with a 800 W rated-power solar module would reduce greenhouse gas (GHG) emission by 63% in Japan. We obtained an average power generation of 2.1 kWh/day over 100 days by solar modules installed on a Prius under the real environment, which was larger than the required power to achieve the GHG emission reduction. We also investigate an innovative statistic low-concentrator with III-V cells in order to reduce installation area for the automobiles. We show that our proposed design (asymmetric-aspheric design) can expand the acceptance incident angle and increase the annual energy yield, while keeping thin structure, which is essential to automobile application.
{"title":"Next environment-friendly cars: Application of solar power as automobile energy source","authors":"T. Masuda, K. Araki, K. Okumura, S. Urabe, Yukinori Kudo, Kazutaka Kimura, Takashi Nakado, Akinori Sato, M. Yamaguchi","doi":"10.1109/PVSC.2016.7749663","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749663","url":null,"abstract":"We investigate the benefits of utilizing solar power as an energy source for future automobiles. Since there are strict emission standards developed by governments, we must find an alternative energy source for the future automobiles. We show that replacing all passenger cars with hybrid vehicles equipped with a 800 W rated-power solar module would reduce greenhouse gas (GHG) emission by 63% in Japan. We obtained an average power generation of 2.1 kWh/day over 100 days by solar modules installed on a Prius under the real environment, which was larger than the required power to achieve the GHG emission reduction. We also investigate an innovative statistic low-concentrator with III-V cells in order to reduce installation area for the automobiles. We show that our proposed design (asymmetric-aspheric design) can expand the acceptance incident angle and increase the annual energy yield, while keeping thin structure, which is essential to automobile application.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"18 1","pages":"0580-0584"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78420897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750120
M. Rutzinger, L. Krempel, Manuel Salzberger, Mario Buchner, Alexander Hohn, M. Kellner, K. Janzer, C. Zimmermann, M. Langer
Several promising multi-junction solar cell concepts for space applications are currently under development worldwide. On-Orbit Verification on CubeSats is a cost-efficient method to gain data on critical hardware early in the design validation process. The MOVE-II CubeSat will be used for the verification of novel 4-6 junction solar cells. With a footprint of 10×10 cm2, the payload consists of one full size solar cell (8×4 cm2) and up to 7 positions (each 2×2 cm2) for corresponding isotype solar cells. The measurement electronics is based on commercial off-the-shelf hardware. MOVE-II is planned to launch in early 2018 into a 500-550 km sun-synchronous orbit.
{"title":"On-orbit verification of space solar cells on the CubeSat MOVE-II","authors":"M. Rutzinger, L. Krempel, Manuel Salzberger, Mario Buchner, Alexander Hohn, M. Kellner, K. Janzer, C. Zimmermann, M. Langer","doi":"10.1109/PVSC.2016.7750120","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750120","url":null,"abstract":"Several promising multi-junction solar cell concepts for space applications are currently under development worldwide. On-Orbit Verification on CubeSats is a cost-efficient method to gain data on critical hardware early in the design validation process. The MOVE-II CubeSat will be used for the verification of novel 4-6 junction solar cells. With a footprint of 10×10 cm2, the payload consists of one full size solar cell (8×4 cm2) and up to 7 positions (each 2×2 cm2) for corresponding isotype solar cells. The measurement electronics is based on commercial off-the-shelf hardware. MOVE-II is planned to launch in early 2018 into a 500-550 km sun-synchronous orbit.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"287 1","pages":"2605-2609"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74949989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749881
Shu-Tsung Hsu, Yean‐San Long, Teng‐Chun Wu, M. Tsai
In the first of this two-part communication, this paper presented the apparatus and test procedures of a new performance test method for OPV/DSSC according to its spectrum response (SR) measurement and device qualification. Calculation and standardization are addressed in Part II [1]. OPV/DSSC needs specific basis of reference to differ with standard test condition (STC) used by p-n junction solar cell, and reserves extra time for SR test due to capacity effect. Results were applied to SEMI Doc. 5647 and released as SEMI PV69 [2] by voting in 2015.
{"title":"Spectrum response measurement for organic photovoltaic and dye sensitized solar cell. Part I: Apparatus and test procedures","authors":"Shu-Tsung Hsu, Yean‐San Long, Teng‐Chun Wu, M. Tsai","doi":"10.1109/PVSC.2016.7749881","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749881","url":null,"abstract":"In the first of this two-part communication, this paper presented the apparatus and test procedures of a new performance test method for OPV/DSSC according to its spectrum response (SR) measurement and device qualification. Calculation and standardization are addressed in Part II [1]. OPV/DSSC needs specific basis of reference to differ with standard test condition (STC) used by p-n junction solar cell, and reserves extra time for SR test due to capacity effect. Results were applied to SEMI Doc. 5647 and released as SEMI PV69 [2] by voting in 2015.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"7 1","pages":"1557-1560"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80055780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7750277
H. Yamaya, T. Ohigashi, H. Matsukawa, I. Kaizuka, Osamu Ikki
Since the start of the Feed-in Tariff Program in July 2012, the PV market in Japan has been growing and annual installed capacity reached 9 GW level in 2014. It is expected that cumulative PV installed capacity as of the end of year 2015 reach 33GW with newly additional capacity of 10 GW. The FIT program was introduced for aiming to lead cost reduction of PV systems. However, The Ministry of Economy, Trade and Industry (METI) decided to change the rules of setting the FIT level since METI concluded that the current framework of the FIT program was not fully contributed to the advancement of cost reduction. This paper analyses the status of PV system cost trends including soft cost and consider impacts of the proposed revision of the FIT program on cost structures.
{"title":"PV cost analysis in the Japanese PV market","authors":"H. Yamaya, T. Ohigashi, H. Matsukawa, I. Kaizuka, Osamu Ikki","doi":"10.1109/PVSC.2016.7750277","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7750277","url":null,"abstract":"Since the start of the Feed-in Tariff Program in July 2012, the PV market in Japan has been growing and annual installed capacity reached 9 GW level in 2014. It is expected that cumulative PV installed capacity as of the end of year 2015 reach 33GW with newly additional capacity of 10 GW. The FIT program was introduced for aiming to lead cost reduction of PV systems. However, The Ministry of Economy, Trade and Industry (METI) decided to change the rules of setting the FIT level since METI concluded that the current framework of the FIT program was not fully contributed to the advancement of cost reduction. This paper analyses the status of PV system cost trends including soft cost and consider impacts of the proposed revision of the FIT program on cost structures.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"27 1","pages":"3304-3308"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81625229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749573
M. Lang, Tobias Renz, C. Zimmermann, C. Krammer, H. Kalt, M. Hetterich
Cu2ZnSn(S, Se)4 (CZTSSe) shows broad and asymmetric photoluminescence spectra situated far below the absorption edge at low temperatures. The physical recombination paths for the observed transitions could not be assigned unambiguously yet in literature. Nevertheless we show in this contribution that the peak position of the photoluminescence at low temperatures can be used as an indirect measure of the degree of order in the Cu-Zn planes of the kesterite crystal structure. The degree of order can be changed easily by thermal annealing procedures. The photoluminescence for different degrees of order comprises an additional contribution which seems not to change its energetic position with the degree of order which is in contrast to the main radiative contribution and band parameters, i.e., the band gap. We attribute this transition to a secondary phase or some deep defect level which does not follow the CZTSSe band edge as determined by electroreflectance.
{"title":"Analysis of the radiative transitions in CZTSSe solar cells with varying degree of Cu-Zn order","authors":"M. Lang, Tobias Renz, C. Zimmermann, C. Krammer, H. Kalt, M. Hetterich","doi":"10.1109/PVSC.2016.7749573","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749573","url":null,"abstract":"Cu2ZnSn(S, Se)4 (CZTSSe) shows broad and asymmetric photoluminescence spectra situated far below the absorption edge at low temperatures. The physical recombination paths for the observed transitions could not be assigned unambiguously yet in literature. Nevertheless we show in this contribution that the peak position of the photoluminescence at low temperatures can be used as an indirect measure of the degree of order in the Cu-Zn planes of the kesterite crystal structure. The degree of order can be changed easily by thermal annealing procedures. The photoluminescence for different degrees of order comprises an additional contribution which seems not to change its energetic position with the degree of order which is in contrast to the main radiative contribution and band parameters, i.e., the band gap. We attribute this transition to a secondary phase or some deep defect level which does not follow the CZTSSe band edge as determined by electroreflectance.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"71 1","pages":"0179-0182"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84289636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-06-05DOI: 10.1109/PVSC.2016.7749410
K. Nakajima, S. Ono, Yuzuru Kaneko, R. Murai, K. Shirasawa, T. Fukuda, H. Takato
As an advanced cast method, we proposed the noncontact crucible (NOC) method to obtain ingots with large diameter and diameter ratio using small crucible. By controlling the size of the low-temperature region, a Si single ingot with a 45 cm diameter was obtained using a 50 cm diameter crucible. As the oxygen concentration was always lower than that of Czochralski (CZ) ingots, a p-type ingot was prepared to determine the distribution of conversion efficiency. All (100 %) regular solar cells grown by the NOC method had higher conversion efficiency than 18.2% when using the same solar cell structure and process to obtain the conversion efficiency of 19.0% for a p-type CZ wafer. Therefore, the final yield of high efficiency solar cells prepared by the NOC method will be higher than that of the cast method when the suitable diameter will be selected.
{"title":"Growth of Si single ingots with large diameter (∼45 cmφ) and high yield of high conversion efficiency (≥ 18 %) cells using a small crucible (∼50 cmφ) by noncontact crucible method","authors":"K. Nakajima, S. Ono, Yuzuru Kaneko, R. Murai, K. Shirasawa, T. Fukuda, H. Takato","doi":"10.1109/PVSC.2016.7749410","DOIUrl":"https://doi.org/10.1109/PVSC.2016.7749410","url":null,"abstract":"As an advanced cast method, we proposed the noncontact crucible (NOC) method to obtain ingots with large diameter and diameter ratio using small crucible. By controlling the size of the low-temperature region, a Si single ingot with a 45 cm diameter was obtained using a 50 cm diameter crucible. As the oxygen concentration was always lower than that of Czochralski (CZ) ingots, a p-type ingot was prepared to determine the distribution of conversion efficiency. All (100 %) regular solar cells grown by the NOC method had higher conversion efficiency than 18.2% when using the same solar cell structure and process to obtain the conversion efficiency of 19.0% for a p-type CZ wafer. Therefore, the final yield of high efficiency solar cells prepared by the NOC method will be higher than that of the cast method when the suitable diameter will be selected.","PeriodicalId":6524,"journal":{"name":"2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)","volume":"50 1","pages":"0068-0072"},"PeriodicalIF":0.0,"publicationDate":"2016-06-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84565423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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