Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116210
R. Rosales, M. Zorn, J. Lott
Directly current-modulated 980-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture-diameters of 1.5-μm exhibit small-signal −3-dB modulation bandwidths of 31 and 25-GHz and maximum single-mode light-output-powers of 3 and 2-mW at 25 and 85°C, respectively. The side-mode-suppression-ratio exceeds 40-dB at bias currents above threshold.
{"title":"30-GHz small-signal modulation bandwidth with directly current-modulated 980-nm oxide-aperture VCSELs","authors":"R. Rosales, M. Zorn, J. Lott","doi":"10.1109/IPCON.2017.8116210","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116210","url":null,"abstract":"Directly current-modulated 980-nm vertical-cavity surface-emitting lasers (VCSELs) with oxide-aperture-diameters of 1.5-μm exhibit small-signal −3-dB modulation bandwidths of 31 and 25-GHz and maximum single-mode light-output-powers of 3 and 2-mW at 25 and 85°C, respectively. The side-mode-suppression-ratio exceeds 40-dB at bias currents above threshold.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"21 1","pages":"533-534"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72643482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116179
H. Mashiko, K. Oguri, Yuta Chisuga, Hiroyuki Masuda, Tomohiko Yamaguchi, A. Suda, I. Katayama, J. Takeda, H. Gotoh
We studied petahertz electronic oscillations with 1.16-PHz frequency using gallium nitride (GaN) wide-bandgap semiconductor. An isolated attosecond pulse with coherent broadband spectrum reveals dipole oscillation with 860-as periodicity in the GaN electron and hole system.
{"title":"Petahertz optical drive with wide-bandgap materials","authors":"H. Mashiko, K. Oguri, Yuta Chisuga, Hiroyuki Masuda, Tomohiko Yamaguchi, A. Suda, I. Katayama, J. Takeda, H. Gotoh","doi":"10.1109/IPCON.2017.8116179","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116179","url":null,"abstract":"We studied petahertz electronic oscillations with 1.16-PHz frequency using gallium nitride (GaN) wide-bandgap semiconductor. An isolated attosecond pulse with coherent broadband spectrum reveals dipole oscillation with 860-as periodicity in the GaN electron and hole system.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"44 1","pages":"451-452"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77739096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116230
Ojoon Kwon, V. Apalkov, M. Stockman, D. Kim
The ultrafast semimetalization by light field of various materials have been studied. Despite of their different physical properties, similar semimetallization behavior has been observed, which can be well explained by Wannier Stark localization with Zener type tunneling, taking interband and intraband transition into account.
{"title":"Universality of ultrafast semi-metallization in dielectrics in PHz domain","authors":"Ojoon Kwon, V. Apalkov, M. Stockman, D. Kim","doi":"10.1109/IPCON.2017.8116230","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116230","url":null,"abstract":"The ultrafast semimetalization by light field of various materials have been studied. Despite of their different physical properties, similar semimetallization behavior has been observed, which can be well explained by Wannier Stark localization with Zener type tunneling, taking interband and intraband transition into account.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"112 1","pages":"575-576"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80173175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116142
M. Guasoni, L. Carletti, D. Neshev, C. de Angelis
We report a theoretical model for the study of second harmonic generation in cylindrical structures of finite height. By changing the structure of the pump beam we demonstrate switching from magnetic to electric dipole radiation in the generated second harmonic frequency.
{"title":"Switching from magnetic to electric dipole in second harmonic generation from all-dielectric nanoantennas","authors":"M. Guasoni, L. Carletti, D. Neshev, C. de Angelis","doi":"10.1109/IPCON.2017.8116142","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116142","url":null,"abstract":"We report a theoretical model for the study of second harmonic generation in cylindrical structures of finite height. By changing the structure of the pump beam we demonstrate switching from magnetic to electric dipole radiation in the generated second harmonic frequency.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"496 1","pages":"367-368"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84019392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116000
P. Bhattacharya, A. Hazari
There has been a great deal of attention paid recently to GaN-based nanowires and nanowire heterostructures for their unique materials properties and the potential to realize unique and useful devices with them. They can be epitaxially grown on a variety of substrates, including the technologically important (001)Si [1]. Most importantly, the polarization field and density of extended defects in the nanowires are smaller than those in planar heterostructures. The density of surface states on the nanowire walls is also small and ∼103cm−2. The area density of the nanowire arrays can be varied in the range of 109-1011cm−2. These nanowires have therefore presented a new III-nitride based technology which allows the realization of light sources emitting in the ‘green gap’ and beyond. The active light-emitting region in the nanowires are usually InGaN disks, whose composition can be varied to tune the emission wavelength. Detailed studies have revealed that a single quantum dot is formed in the InGaN disk region [2].
{"title":"1.3μm Ill-nitride nanowire monolithic diode lasers and photonic integrated circuits on (001) silicon","authors":"P. Bhattacharya, A. Hazari","doi":"10.1109/IPCON.2017.8116000","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116000","url":null,"abstract":"There has been a great deal of attention paid recently to GaN-based nanowires and nanowire heterostructures for their unique materials properties and the potential to realize unique and useful devices with them. They can be epitaxially grown on a variety of substrates, including the technologically important (001)Si [1]. Most importantly, the polarization field and density of extended defects in the nanowires are smaller than those in planar heterostructures. The density of surface states on the nanowire walls is also small and ∼103cm−2. The area density of the nanowire arrays can be varied in the range of 109-1011cm−2. These nanowires have therefore presented a new III-nitride based technology which allows the realization of light sources emitting in the ‘green gap’ and beyond. The active light-emitting region in the nanowires are usually InGaN disks, whose composition can be varied to tune the emission wavelength. Detailed studies have revealed that a single quantum dot is formed in the InGaN disk region [2].","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"20 1","pages":"47-48"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81237163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116275
M. Shemis, Emad Alkhazraji, M. Khan, A. Ragheb, H. Fathallah, S. Alshebeili, M. Z. M. Khan
InAs/InP quantum-dash multi-wavelength laser is reported utilizing self-injection locking coherency boosting technique. Subcarrier controllability between 1–16 Fabry-Perot modes (1600–1610nm) with ∼−3–9dBm mode power is achieved. Thereafter, a successful 64 Gbit/s DP-QPSK data transmission is demonstrated via a single self-injection locked mode over 20km single-mode-fiber.
{"title":"Self-injection locked quantum-dash multi-wavelength laser","authors":"M. Shemis, Emad Alkhazraji, M. Khan, A. Ragheb, H. Fathallah, S. Alshebeili, M. Z. M. Khan","doi":"10.1109/IPCON.2017.8116275","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116275","url":null,"abstract":"InAs/InP quantum-dash multi-wavelength laser is reported utilizing self-injection locking coherency boosting technique. Subcarrier controllability between 1–16 Fabry-Perot modes (1600–1610nm) with ∼−3–9dBm mode power is achieved. Thereafter, a successful 64 Gbit/s DP-QPSK data transmission is demonstrated via a single self-injection locked mode over 20km single-mode-fiber.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"6 2 1","pages":"669-670"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78271101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116195
Song Chen, E. Fossum
This paper presents a new technique to achieve high pixel conversion gain (CG) in a standard 0.18 um CMOS image sensor process. CG of 121 uV/e- and read noise of 3.2 erms are measured in the prototype sensor.
本文提出了一种在标准0.18 um CMOS图像传感器工艺中实现高像素转换增益的新技术。在原型传感器中测量了121 uV/e-的CG和3.2 erms的读取噪声。
{"title":"High conversion-gain pixels in a standard CMOS image sensor process","authors":"Song Chen, E. Fossum","doi":"10.1109/IPCON.2017.8116195","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116195","url":null,"abstract":"This paper presents a new technique to achieve high pixel conversion gain (CG) in a standard 0.18 um CMOS image sensor process. CG of 121 uV/e- and read noise of 3.2 erms are measured in the prototype sensor.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"6 1","pages":"485-486"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73314426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116050
D. Ting, L. Höglund, A. Soibel, A. Khoshakhlagh, S. Keo, A. Fisher, Sir Rafol, E. Luong, C. Hill, J. Mumolo, John Liu, B. Pepper, S. Gunapala
Significant advances in type-II superlattice infrared detectors and focal plane arrays have be en achieved in the past decade. We briefly explore two challenging aspects for type-II superlattice based infrared detectors, namely, minority carrier lifetime and conductivity effective mass.
{"title":"Aspects of type-II superlattice infrared detectors: Minority carrier lifetimes and conductivity effective masses","authors":"D. Ting, L. Höglund, A. Soibel, A. Khoshakhlagh, S. Keo, A. Fisher, Sir Rafol, E. Luong, C. Hill, J. Mumolo, John Liu, B. Pepper, S. Gunapala","doi":"10.1109/IPCON.2017.8116050","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116050","url":null,"abstract":"Significant advances in type-II superlattice infrared detectors and focal plane arrays have be en achieved in the past decade. We briefly explore two challenging aspects for type-II superlattice based infrared detectors, namely, minority carrier lifetime and conductivity effective mass.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"86 1","pages":"161-162"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83988526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116264
M. Taghinejad, W. Cai
A sub-picosecond all-optical plasmonic modulator is demonstrated by leveraging ultrafast injection dynamics of hot-electrons at the interface of gold/ITO, incorporated into a metamaterial absorber. Accurate control over modulation depth and modulation wavelength is achievable in the proposed design.
{"title":"All-optical modulation of ultrasharp lattice plasmons","authors":"M. Taghinejad, W. Cai","doi":"10.1109/IPCON.2017.8116264","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116264","url":null,"abstract":"A sub-picosecond all-optical plasmonic modulator is demonstrated by leveraging ultrafast injection dynamics of hot-electrons at the interface of gold/ITO, incorporated into a metamaterial absorber. Accurate control over modulation depth and modulation wavelength is achievable in the proposed design.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"2014 1","pages":"647-648"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82611226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2017-10-01DOI: 10.1109/IPCON.2017.8116204
A. Dochhan, Nicklas Eiselt, H. Griesser, M. Eiselt, J. Elbers
We discuss options for data-center interconnects with reaches up to 80 km. Besides coherent transmission, direct detect solutions like the presented quantum-dot laser and silicon ring modulator based 56.25-Gb/s DWDM PAM4 TOSA are viable options.
{"title":"Transceivers for inter-data center connections","authors":"A. Dochhan, Nicklas Eiselt, H. Griesser, M. Eiselt, J. Elbers","doi":"10.1109/IPCON.2017.8116204","DOIUrl":"https://doi.org/10.1109/IPCON.2017.8116204","url":null,"abstract":"We discuss options for data-center interconnects with reaches up to 80 km. Besides coherent transmission, direct detect solutions like the presented quantum-dot laser and silicon ring modulator based 56.25-Gb/s DWDM PAM4 TOSA are viable options.","PeriodicalId":6657,"journal":{"name":"2017 IEEE Photonics Conference (IPC) Part II","volume":"52 1","pages":"513-514"},"PeriodicalIF":0.0,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86752766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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