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First-Principles Calculations to Investigate the Mechanical Structure and Optical Properties of Lead Halide Perovskite CH3NH3PbI3 用第一性原理计算研究卤化钙钛矿CH3NH3PbI3的机械结构和光学性质
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-02-16 DOI: 10.1155/2022/1565268
Truphena J. Kipkwarkwar, P. Nyawere, C. Maghanga
We report the study of the mechanical structure and optical properties of lead halide perovskite CH3NH3PbI3 using ab initio methods. The ground state energy calculations were performed within density functional theory and generalized gradient approximation using the pseudopotential method with plane-wave basis sets. The norm conserving pseudopotential was used. The ground state properties of the electronic structure of the perovskite were used and elastic parameters such as bulk modulus B, Young’s modulus E, shear modulus G, and Poisson’s ratio υ were determined and found to be in good agreement with experimental values. The ratio B / G obtained was found to be greater than 1.75. Poisson’s ratio ( υ ) was obtained as 0.25 implying that CH3NH3PbI3 is a ductile material. The absorption coefficient within the energy range of 0 to 6 eV was found to be 5.76 × 105 cm−1 indicating maximum absorption. The absorption coefficient compares well with the available experimental and computed values.
本文报道用从头算方法研究了卤化铅钙钛矿CH3NH3PbI3的机械结构和光学性质。在密度泛函理论和广义梯度近似下,利用平面波基集的伪势方法计算了基态能量。采用范数守恒赝势。利用钙钛矿电子结构的基态性质,测定了钙钛矿的体积模量B、杨氏模量E、剪切模量G和泊松比υ等弹性参数,结果与实验值吻合较好。得到的B / G比值大于1.75。泊松比(υ)为0.25,表明CH3NH3PbI3是一种延展性材料。在0 ~ 6 eV能量范围内的吸收系数为5.76 × 105 cm−1,表示最大吸收。所得的吸收系数与现有的实验值和计算值吻合良好。
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引用次数: 4
Computational Study of Metal-Free Magnetism and Spin-Dependent Seebeck Effect in Silicene Nanoribbons with Zigzag and Klein Edges 锯齿边和克莱因边硅纳米带金属无磁性和自旋相关塞贝克效应的计算研究
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-02-12 DOI: 10.1155/2022/9969776
X. Tan, Gang Xu, Youchang Jiang, Dahua Ren
Nanoribbons based on low-dimensional materials are potential candidates for nanoscale spintronics devices. Here, some ferromagnetic silicene nanoribbons with zigzag and Klein edges (N-ZKSiNRs) are constructed. It is demonstrated that the N-ZKSiNRs with various widths (N) are placed in various spin-resolved electronic situations. With the increase of the width parameter N from 4 to 19, the N-ZKSiNRs pass from the indirect-gap bipolar magnetic semiconducting state (BMS) to the bipolar spin-gapless semiconductor (BSGS) and eventually to half-metallicity (HM). Moreover, applying a temperature gradient through the nanoribbons leads to spin-dependent current with the opposite flowing and spin orientations, demonstrating the spin-dependent Seebeck effect (SDSE). Besides, it was found that the BSGS phase is superior to the BMS and HM for generating SDSE. These findings confirm that the ZKSiNRs are promising choices for spin caloritronics devices.
基于低维材料的纳米带是纳米级自旋电子学器件的潜在候选材料。本文构建了具有之字形边缘和克莱因边缘的铁磁性硅纳米带(N-ZKSiNRs)。结果表明,具有不同宽度(N)的N- zksinr被放置在不同的自旋分辨电子环境中。当宽度参数N从4增加到19时,N- zksinrs从间接间隙双极磁性半导体态(BMS)过渡到双极自旋无间隙半导体态(BSGS),最终过渡到半金属态(HM)。此外,在纳米带中施加温度梯度会产生与自旋方向相反的自旋相关电流,从而证明了自旋相关塞贝克效应(SDSE)。此外,BSGS相在产生SDSE方面优于BMS和HM相。这些发现证实了zksinr是自旋热电子器件的有希望的选择。
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引用次数: 0
An Effective Route for the Growth of Multilayer MoS2 by Combining Chemical Vapor Deposition and Wet Chemistry 化学气相沉积与湿化学相结合生长多层MoS2的有效途径
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-02-09 DOI: 10.1155/2022/3233252
Z. Almohaimeed, S. Karamat, R. Akram, Saira Sarwar, A. Javaid, A. Oral
Molybdenum disulfide (MoS2) is an actively pursuing material of the 2D family due to its semiconducting characteristics, making it a potential candidate for nano and optoelectronics application. MoS2 growth from molybdenum and sulphur precursors by chemical vapor depositions (CVD) is used widely, but molybdates’ conversion into MoS2 via CVD is overlooked previously. Direct growth of MoS2 on the desired pattern not only reduces the interfacial defects but also reduces the complexities in device fabrication. In this work, we combine the wet synthesis and chemical vapor deposition method where sodium molybdate and L-cysteine are used to make a solution. With the dip coating, the mixture is coated on the substrates, and then, chemical vapor deposition is used to convert the chemicals into MoS2. Raman spectroscopy revealed the presence of oxysulphides (peaks number value) other than A 1 g and E 2 g 1 , where heat treatment was performed in the presence of Ar gas flow only. On the other hand, the films reducing in the presence of sulphur and argon gas promote only A 1 g and E 2 g 1 peaks of MoS2, which confirms complete transformation. XRD diffraction showed a very small change in the diffraction peaks and value of strain, whereas SEM imaging showed the flakes formation for MoS2 samples which were heated in the presence of sulphur. X-ray photoelectron spectroscopy is also performed for the chemical composition and to understand the valence state of Mo, S, and O and other species.
由于其半导体特性,二硫化钼(MoS2)是一种积极追求的二维家族材料,使其成为纳米和光电子应用的潜在候选者。化学气相沉积法(CVD)从钼和硫前驱体中生长二硫化钼得到了广泛的应用,但以前忽视了通过CVD将钼酸盐转化为二硫化钼。MoS2的直接生长不仅减少了界面缺陷,而且降低了器件制造的复杂性。在这项工作中,我们将湿法合成和化学气相沉积相结合,用钼酸钠和l -半胱氨酸制成溶液。用浸涂法,将混合物涂在基材上,然后用化学气相沉积法将化学物质转化为二硫化钼。拉曼光谱显示除了a1g和e2g1g之外的硫化物(峰值)的存在,其中热处理仅在氩气流存在的情况下进行。另一方面,在硫和氩气存在下,还原膜只促进了MoS2的a1g和e2g1峰,证实了完全转变。XRD衍射显示,试样的衍射峰和应变值变化很小,而SEM成像显示,在硫存在下加热后,MoS2试样形成了薄片。x射线光电子能谱也用于化学成分和了解价态Mo, S, O和其他物种。
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引用次数: 2
Zinc-Blende GeC Stabilized on GaN (001): An Ab Initio Study 锌-闪锌矿GeC在GaN(001)上稳定:从头算研究
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-30 DOI: 10.1155/2022/1506702
J. H. Camacho-García, Ma L. Ruiz-Peralta, G. Hernández-Cocoletzi, A. Bautista-Hernández, M. Salazar-Villanueva, A. Escobedo-Morales, E. Chigo-Anota, J. C. Moreno-Hernández
First-principle calculations have been performed to explore the initial stages of the zinc blende-like germanium carbide epitaxial growth on the gallium nitride (001)-(2 × 2) surface. First, we studied the Ge/C monolayer adsorption and incorporation at high symmetry sites. Results show that the adsorptions at the top and hcp1 sites are the most stable structures of C and Ge, respectively. Different terminated surfaces were used on the GeC epitaxial growth. According to the surface formation energies, only the first two bilayers are stable; therefore, the GeC epitaxial growth is favorable only under N-rich conditions on a Ge-terminated surface and with Ge bilayers terminated. In addition, it is demonstrated that GeC bilayers on the C-terminated surfaces are unstable and preclude the epitaxial growth. Electronic properties have been investigated by calculating the density of states (DOS) and the projected density of states (PDOS) of the most favorable structures.
采用第一性原理计算方法,探讨了在氮化镓(001)-(2 × 2)表面上,锌掺杂样碳化锗外延生长的初始阶段。首先,我们研究了Ge/C单层膜在高对称位点的吸附和掺入。结果表明,C和Ge在顶部和hcp1位点的吸附结构最为稳定。采用不同的端接面进行GeC外延生长。根据表面形成能,只有前两层是稳定的;因此,只有在富n条件下,在终止Ge的表面和终止Ge双分子层上,才有利于GeC的外延生长。此外,还证明了c端表面的GeC双分子层是不稳定的,阻碍了外延生长。通过计算最有利结构的态密度(DOS)和投影态密度(PDOS)来研究电子性质。
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引用次数: 0
Facile Synthesis of Graphene Oxide/Titanate Nanotube Composites and Their Application for Cobalt(II) Removal 氧化石墨烯/钛酸盐纳米管复合材料的快速合成及其在钴(II)去除中的应用
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-28 DOI: 10.1155/2022/4260228
Min-Da Xu, Zhen-Yu. Jin, W.-J. Xie, Deli Wang, G. Xu, Aimei Wang, Ran Zhang, Jian Huang
In this work, the novel graphene oxide/titanate nanotubes (GTNT) composites were synthesized through a facile and high-yield alkaline hydrothermal method. SEM, TEM, XRD, BET, and TGA/DTA were applied to study the morphology and structure of the GTNT composites. The results show that a huge number of titanate nanotubes are closely attached to the graphene sheet structure and overlap each other. This hierarchical morphology endows the GTNT composites with not only the high specific surface area of 236.9 m2/g but also abundant porous structure, both of which are benefit for Co(II) adsorption. The batch adsorption experiments demonstrate that the GTNT composites have a high adsorption capacity and rapid kinetics for Co(II) adsorption (10 min for equilibrium). The adsorption capacity of the GTNT composites reaches 211.1 mg/g. The adsorption kinetics of the GTNT composites fits well to the pseudo-second-order model, while the adsorption isotherm of which fits well to the Langmuir model. The adsorption performance of Co(II) ions on the GTNT composites has a great relationship with the pH value, in the pH range of 1–7, the Co(II) adsorption capacity of the GTNT composites greatly increases with the increase of the pH value. In addition, the effect of coexisting anions on fluoride removal is also investigated. Na+, K+, and Mg2+ ions have shown a negligible effect on the Co(II) adsorption efficiency of the GTNT composites. However, the existences of Cu2+, Cd2+, and Pb2+ ions would clearly have an effect on the Co(II) adsorption of the GTNT composites. The adsorption mechanism is also discussed. It is believed that the GTNT composites can be considered as a potential functional material for removing the radioactive metals containing wastewater.
本文采用简单高效的碱性水热法制备了新型氧化石墨烯/钛酸盐纳米管(GTNT)复合材料。采用SEM、TEM、XRD、BET、TGA/DTA等方法研究了GTNT复合材料的形貌和结构。结果表明,大量钛酸盐纳米管紧密附着在石墨烯片结构上,并相互重叠。这种层次化的形貌使得GTNT复合材料不仅具有236.9 m2/g的高比表面积,而且具有丰富的多孔结构,有利于吸附Co(II)。批量吸附实验表明,GTNT复合材料对Co(II)具有较高的吸附能力和快速的吸附动力学(10 min达到平衡)。GTNT复合材料的吸附量达到211.1 mg/g。GTNT复合材料的吸附动力学符合拟二阶模型,吸附等温线符合Langmuir模型。GTNT复合材料对Co(II)离子的吸附性能与pH值有很大关系,在pH 1 ~ 7范围内,GTNT复合材料对Co(II)的吸附能力随着pH值的增加而大大增加。此外,还研究了共存阴离子对除氟的影响。Na+、K+和Mg2+离子对GTNT复合材料Co(II)吸附效率的影响可以忽略不计。然而,Cu2+、Cd2+和Pb2+离子的存在会明显影响GTNT复合材料对Co(II)的吸附。并对吸附机理进行了讨论。认为GTNT复合材料可作为一种潜在的去除含放射性金属废水的功能材料。
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引用次数: 0
Analogous Atomic and Electronic Properties between V N and V N和之间的类似原子和电子性质
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-11 DOI: 10.1155/2022/1036942
C. Moon, Kee-Suk Hong, Yong-Sung Kim
<jats:p>We investigate defect properties in hexagonal boron nitride (hBN) which is attracting much attention as a single photon emitter. Using first-principles calculations, we find that nitrogen-vacancy defect <jats:inline-formula> <math xmlns="http://www.w3.org/1998/Math/MathML" id="M3"> <mfenced open="(" close=")" separators="|"> <mrow> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>N</mi> </mrow> </msub> </mrow> </mfenced> </math> </jats:inline-formula> has a lower energy structure in <jats:inline-formula> <math xmlns="http://www.w3.org/1998/Math/MathML" id="M4"> <msub> <mrow> <mi>C</mi> </mrow> <mrow> <mn>1</mn> <mi>h</mi> </mrow> </msub> </math> </jats:inline-formula> symmetry in 1− charge state than the previously known <jats:inline-formula> <math xmlns="http://www.w3.org/1998/Math/MathML" id="M5"> <msub> <mrow> <mi>D</mi> </mrow> <mrow> <mn>3</mn> <mi>h</mi> </mrow> </msub> </math> </jats:inline-formula> symmetry structure. Noting that carbon has one more valence electron than boron species, our finding naturally points to the correspondence between <jats:inline-formula> <math xmlns="http://www.w3.org/1998/Math/MathML" id="M6"> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>N</mi> </mrow> </msub> </math> </jats:inline-formula> and <jats:inline-formula> <math xmlns="http://www.w3.org/1998/Math/MathML" id="M7"> <msub> <mrow> <mi>V</mi> </mrow> <mrow> <mi>N</mi> </mrow> </msub> <msub>
研究了六方氮化硼(hBN)作为单光子发射体备受关注的缺陷性质。利用第一性原理计算,我们发现氮空位缺陷vn具有较低的能量结构C在1 -荷电态的h对称性比已知的D3h对称结构。注意到碳比硼多一个价电子,我们的发现自然指向vn和V之间的对应关系N - C - B缺陷,它们之间有一个电荷态的差异,这确实被原子对称性,态密度,和激发态能。B被认为是一个有希望的候选单光子发射源,我们的研究表明V N是另一个值得关注的重要候选源。具有较简单的形式,没有将外来元素掺入主体材料中。
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引用次数: 1
A -Type Magnetic Semiconductor (Sr, Na)(Zn, Mn)2Sb2 Isostructural to 122-Type Iron-Based Superconductors 122型铁基超导体的A型磁性半导体(Sr, Na)(Zn, Mn)2Sb2等构
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-10 DOI: 10.1155/2022/4291923
Yilun Gu, Rufei Zhang, Haojie Zhang, Licheng Fu, Guoxiang Zhi, Jinou Dong, Xueqin Zhao, Lingfeng Xie, Fanlong Ning
A new diluted magnetic semiconductor (Sr, Na)(Zn, Mn)<sub>2</sub>Sb<sub>2</sub> has been successfully synthesized by doping Na and Mn into the parent compound <span><svg height="12.4894pt" style="vertical-align:-3.181499pt" version="1.1" viewbox="-0.0498162 -9.3079 48.943 12.4894" width="48.943pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><use xlink:href="#g190-84"></use></g><g transform="matrix(.013,0,0,-0.013,6.084,0)"></path></g><g transform="matrix(.013,0,0,-0.013,10.907,0)"></path></g><g transform="matrix(.013,0,0,-0.013,18.928,0)"></path></g><g transform="matrix(.0091,0,0,-0.0091,26.137,3.132)"><use xlink:href="#g50-51"></use></g><g transform="matrix(.013,0,0,-0.013,31.083,0)"><use xlink:href="#g190-84"></use></g><g transform="matrix(.013,0,0,-0.013,37.245,0)"></path></g><g transform="matrix(.0091,0,0,-0.0091,43.897,3.132)"><use xlink:href="#g50-51"></use></g></svg>,</span> which has a <span><svg height="12.4894pt" style="vertical-align:-3.181499pt" version="1.1" viewbox="-0.0498162 -9.3079 46.4768 12.4894" width="46.4768pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><use xlink:href="#g190-68"></use></g><g transform="matrix(.013,0,0,-0.013,8.762,0)"><use xlink:href="#g190-98"></use></g><g transform="matrix(.013,0,0,-0.013,14.47,0)"><use xlink:href="#g190-66"></use></g><g transform="matrix(.013,0,0,-0.013,23.492,0)"><use xlink:href="#g190-109"></use></g><g transform="matrix(.0091,0,0,-0.0091,26.88,3.132)"><use xlink:href="#g50-51"></use></g><g transform="matrix(.013,0,0,-0.013,31.827,0)"><use xlink:href="#g190-84"></use></g><g transform="matrix(.013,0,0,-0.013,37.911,0)"><use xlink:href="#g190-106"></use></g><g transform="matrix(.0091,0,0,-0.0091,41.431,3.132)"><use xlink:href="#g50-51"></use></g></svg>-</span>type crystal structure (space group <span><svg height="11.8174pt" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -11.611 30.973 11.8174" width="30.973pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"></path></g><rect height="0.65243" width="6.26339" x="8.02612" y="-10.9087"></rect><g transform="matrix(.013,0,0,-0.013,8.026,0)"></path></g><g transform="matrix(.013,0,0,-0.013,14.29,0)"></path></g><g transform="matrix(.013,0,0,-0.013,24.547,0)"></path></g></svg>,</span> No. 164, <span><svg height="9.49473pt" style="vertical-align:-0.2063999pt" version="1.1" viewbox="-0.0498162 -9.28833 21.1472 9.49473" width="21.1472pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"></path></g><g transform="matrix(.013,0,0,-0.013,6.708,0)"><use xlink:href="#g113-81"></use></g><g transform="matrix(.013,0,0,-0.013,14.734,0)"></path></g></svg>)</span> isostructural to the 122-type iron-based superconductor <span><svg height="11.9348pt"
通过在母体化合物中掺杂Na和Mn,成功合成了一种新型稀释磁性半导体(Sr, Na)(Zn, Mn)2Sb2,其晶体结构(空间群,164号)与122型铁基超导体具有相同的结构。当仅自旋掺杂(Zn, Mn)取代时,未观察到磁有序。只有在载流子共掺杂(Sr, Na)取代时,在最高居里温度~ 9.5 K以下才会出现铁磁有序。与其他类型的稀释磁性半导体相比,我们将证明负化学压力抑制居里温度。
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引用次数: 0
Preparation and Characterization of Na-β''-Al2O3 Solid Electrolytes Na-β”-Al2O3固体电解质的制备与表征
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-01 DOI: 10.12677/cmp.2022.114008
雪燕 李
Oxide-based Na-β ''-Al 2 O 3 solid electrolytes possess relatively high ionic conductivities at high temperatures, thereby realizing good commercial applications under high temperature environment. However, in most cases, high-temperature are required for the synthesis of Na-β ''-Al 2 O 3 , the high-temperature synthesis of Na-β ''-Al 2 O 3 may lead to the deficiency of Na and then cause the reduction of ionic conductivity. Therefore, how to control the amount of Na element to make up for
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引用次数: 0
First-Principle Calculation of the Effect of Ti Content on the Mechanical Properties of High Entropy Alloy AlFeTixCrZnCu Ti含量对高熵合金AlFeTixCrZnCu力学性能影响的第一性原理计算
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-01 DOI: 10.12677/cmp.2022.112004
兰心 王
Previous studies have shown that AlFeTiCrZnCu high entropy alloys (HEAs) are simple cubic crystal structure. In order to future study the effect of Ti content on high entropy alloys, the lattice parameter, mass density, elastic constant, elastic modulus, and the heats of formation for the high entropy alloys AlFeTi x CrZnCu with the different Ti content were studied by density functional theory of first principle and plane-wave pseudopotential technique with generalized gradient approximation (GGA). The crystal structure was built with the Virtual Crystal Approximation (VCA). The calculated results indicate that the lattice parameter of HEA AlFeTi x CrZnCu increases with the increasing mole fraction of Ti, and the mass density decreases. The mechanical stability of HEA AlFeTi x CrZnCu can be improved with the increase of Ti. The brittleness/toughness of HEA AlFe-Ti x CrZnCu also varies with the content of Ti or the brittleness/toughness criterion. The system stability and thermodynamic stability of HEA AlFeTi x CrZnCu did not change with the increase of Ti, but only decrease.
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引用次数: 0
Effect of Structure on Vibration Frequency of the Graphene Nanoribbon 结构对石墨烯纳米带振动频率的影响
IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER Pub Date : 2022-01-01 DOI: 10.12677/cmp.2022.112002
晓彤 江
Graphene is a lamellar structure of graphite and it is one of important research objects in the current materials and condensed matter disciplines. It has a wide range of development prospect due to its unique structure and excellent properties. Therefore, the research on the physical properties of graphene has become a particularly important part of the present. In this study, the molecular dynamics method was mainly used to simulate the dynamic process of bending vibration of graphene nanoribbons after compressive deformation. The effects of structure size, temperature,
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引用次数: 0
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Advances in Condensed Matter Physics
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