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Photo-EMK bei Störstellen- und Grundgitteranregung im SiC 感兴趣点评功能
Pub Date : 1962-12-31 DOI: 10.1002/PSSB.19620020412
K. Thiessen, G. Jungk
[Russian Text Ignored]. Es werden die Bedingungen fur das Auftreten eines Photoeffektes bei Storstellenanregung diskutiert. Der Storstellen- und Grundgitter-Photovoltaische Effekt an n- und p-SiC mit legierten p-n Ubergangen wurde untersucht durch Messung der Photo-EMK in Abhangigkeit von Photonenenergie, Temperatur und Lichtintensitat. Die spektrale Verteilung der Storstellen-Photo-EMK ist in guter Ubereinstimmung mit der von TOMASHPOLSKI und KHOLUYANOV gemessenen spektralen Verteilung der Elektrolumineszenz. Fur n-SiC wurde die Diffusionslange der Minoritatsladungstrager abgeschatzt.
(俄语)本文还讨论了违反星座广告照片效果发布的条件。实现失效和初级化科技对n和p / n的影响,利用光触发器研究。由TOMASHPOLSKI和KHOLUYANOV所测量的电线虫光谱分布和所不知的光谱分布相似。关于我的慷慨,我已经为少数群体发送了传播条。
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引用次数: 9
List of Short Notes 短注一览表
Pub Date : 1962-12-31 DOI: 10.1515/9783112501443-012
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引用次数: 0
Frontmatter
Pub Date : 1962-12-31 DOI: 10.1515/9783112474969-fm
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引用次数: 0
REDAKTIONSKOLLEGIUM
Pub Date : 1962-12-31 DOI: 10.1515/9783112491928-003
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引用次数: 0
On the Evaluation of Phonon Widths and Shifts 关于声子宽度和位移的评估
Pub Date : 1962-12-31 DOI: 10.1002/PSSB.19620021106
A. Maradudin, A. Fein, G. Vineyard
In this paper a method is described for the numerical evaluation of phonon widths and shifts due to three-phonon processes in an anharmonic crystal. With this method the δ-function and principal value restrictions on the frequencies of the phonons participating in the three-phonon processes do not have to be taken into account explicitly. The method is based on a dispersion relation satisfied by the width and shift, and on their expansion in Legendre functions of the first and second kinds, respectively. It is illustrated by a numerical example. Es wird eine Methode beschrieben zur numerischen Berechnung von Phononenbreiten und Phononenverschiebungen bei Drei-Phononenprozessen in einem anharmonischen Kristall. Bei dieser Methode ist eine explizite Berucksichtigung der δ-Funktion und der Hauptwerbedingungen fur die Frequenzen der an diesen Prozessen beteiligten Phononen nicht notwendig. Die Methode beruht auf einer Dispersionsrelation fur Breite und Verschiebung sowie auf deren Entwicklung in Legendrefunktionen erster bzw. zweiter Art. Das geschilderte Verfahren wird durch ein numerisches Beispiel illustriert.
犬类纸可能是用于对手机的数字评估和固定线路计算机的方式。题为《this压迫的theδ-function and principal价值某些on the frequencies of the phonons participating《three-phonon processes do not也该是taken》账号explicitly .但是以这种方法为基本写照的第一和第二孩子的记录十分乐观它是冲孔符号本文描述了一种计算单元的方法,可以在一个和谐的晶体中对不同的音量和不同的音量进行数值计算。这种方法主要是明确的Berucksichtigungδ-Funktion和找Hauptwerbedingungen频率Phononen参与这些进程中没有必要.该方法以散布广泛和迁移及其在第一和第二一类传奇的作用上的作用为基础。图利乌斯的残暴行为正在通过数字说明。
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引用次数: 42
Recovery of Quench-Hardened Sodium Chloride Crystals 淬火氯化钠晶体的回收
Pub Date : 1962-12-31 DOI: 10.1515/9783112500002-009
G. Rematjt, A. Deketelaere, W. Dekeyser
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引用次数: 0
Backmatter Backmatter
Pub Date : 1962-12-31 DOI: 10.1515/9783112474921-007
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引用次数: 0
Variation of the Injected Carrier Mobility with Pressure in Near-Intrinsic Germanium 近本征锗注入载流子迁移率随压力的变化
Pub Date : 1962-12-31 DOI: 10.1002/PSSB.19620020510
T. Figielski, Z. Wieckowska
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引用次数: 0
Direct Evidence for the Presence of Delayed Recombination in the Electroluminescence of ZnS ZnS电致发光中存在延迟复合的直接证据
Pub Date : 1962-12-31 DOI: 10.1002/PSSB.19620021115
J. Kubatova, K. Pátek
The primary and secondary peaks in an electroluminescent light wave in different pants of a ZnS crystal was studied to provide data for an explanation of the mechanism of the processes in one barrier. The electroluminescence was excited by square-wave voltage pulses of alternating polarity. The results show that the emission is concentrated in two peaks-one primary and one secondary- which however occur for voltage peaks possessing different polarity. A whole series of intermediate cases is also found. The voltage dependence of the local brightness is approximately equal to that of the total brightness. If there are several radiating stripes in the space between electrodes, their polarity as a rule alternates. A rectifying barrier may arise at a boundary between pure and doped material. The results confirm the idea of the periodic broadening of the barrier regions under the action of the external field. The processes occur in the following sequence: barrier broadening with formation of ionized activators in the barrier from voltage pulse in reverse direction, barrier narrowing to equilibrium width, exposure of ionized activators to current of returning electrons, recombination with rise of secondary emission peak, and combination of electrons with ionized activators from voltage pulse in forwardmore » direction which gives rise to primary peak. (J.S.R.)« less
研究了ZnS晶体中不同层位的电致发光光波的主峰和次峰,为解释一个势垒内电致发光过程的机理提供了数据。电致发光是由极性交变的方波电压脉冲激发的。结果表明,辐射主要集中在一个主峰和一个次峰上,而不同极性的电压峰则会出现这两个峰。还发现了一系列中间病例。局部亮度的电压依赖性近似等于总亮度的电压依赖性。如果在电极之间的空间中有几个辐射条纹,它们的极性通常是交替的。在纯材料和掺杂材料之间的边界上可能出现整流势垒。结果证实了在外场作用下势垒区周期性展宽的观点。该过程按照以下顺序发生:势垒展宽,反向电压脉冲在势垒中形成电离激活剂;势垒变窄至平衡宽度;电离激活剂暴露于返回电子的电流中;复合,二次发射峰上升;电子与正向电压脉冲电离激活剂结合,产生一次峰。(J.S.R.)«更少
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引用次数: 4
Versetzungen in aus der Dampfphase gezüchteten CdS-Kristallen 在蒸煮时培育的cds晶体
Pub Date : 1962-12-31 DOI: 10.1515/9783112499986-012
W. Möhling, H. Thiel
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引用次数: 0
期刊
Life sciences (1962)
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