首页 > 最新文献

Proceedings of the National Academy of Sciences, India Section A: Physical Sciences最新文献

英文 中文
Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application 相变存储用氮合金GaSb的多级阈值开关及结晶特性
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-20 DOI: 10.1007/s40010-023-00832-0
Joshua Asirvatham, Lukasz Walczak, Aloke Kanjilal

Multi-level switching memristor devices are becoming a need of the hour to implement the synaptic behaviour for brain-inspired in-memory computing. In that regard, out of all the available memory candidates, Phase Change Memory (PCM) is an attractive option as it is technologically mature, and its physical mechanism is well understood. However, the current generation of PCM materials suffers from stochasticity in their multi-level switching. In this communication, nitrogen alloyed GaSb (N-GaSb) material is proposed as a multi-level switching PCM material to redress stochasticity. Interestingly, N-GaSb exhibits well-defined three states, and it is found to reduce the threshold switching power of GaSb from 16 mW to 17.2 μW. The reason behind multi-level switching and the reduction in required power for threshold switching in N-GaSb has been revealed by synchrotron-based grazing-incidence X-ray diffraction and photoelectron spectroscopy.

为了实现大脑启发的内存计算的突触行为,多级开关忆阻器器件正在成为一种迫切需要。在这方面,在所有可用的候选存储器中,相变存储器(PCM)是一个有吸引力的选择,因为它技术成熟,其物理机制很好地理解。然而,当前一代的PCM材料在其多电平开关中存在随机性问题。在本通讯中,氮合金GaSb (N-GaSb)材料被提出作为一种多级开关PCM材料来纠正随机性。有趣的是,N-GaSb表现出明确的三态,并且发现它可以将GaSb的阈值开关功率从16 mW降低到17.2 μW。利用同步辐射入射x射线衍射和光电子能谱揭示了N-GaSb中多级开关和阈值开关所需功率降低的原因。
{"title":"Multi-level Threshold Switching and Crystallization Characteristics of Nitrogen Alloyed GaSb for Phase Change Memory Application","authors":"Joshua Asirvatham,&nbsp;Lukasz Walczak,&nbsp;Aloke Kanjilal","doi":"10.1007/s40010-023-00832-0","DOIUrl":"10.1007/s40010-023-00832-0","url":null,"abstract":"<div><p>Multi-level switching memristor devices are becoming a need of the hour to implement the synaptic behaviour for brain-inspired in-memory computing. In that regard, out of all the available memory candidates, Phase Change Memory (PCM) is an attractive option as it is technologically mature, and its physical mechanism is well understood. However, the current generation of PCM materials suffers from stochasticity in their multi-level switching. In this communication, nitrogen alloyed GaSb (N-GaSb) material is proposed as a multi-level switching PCM material to redress stochasticity. Interestingly, N-GaSb exhibits well-defined three states, and it is found to reduce the threshold switching power of GaSb from 16 mW to 17.2 μW. The reason behind multi-level switching and the reduction in required power for threshold switching in N-GaSb has been revealed by synchrotron-based grazing-incidence X-ray diffraction and photoelectron spectroscopy.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4799056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Magnetization Dynamics of Domain Walls in Cylindrical Nanowires 圆柱形纳米线畴壁的磁化动力学
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-19 DOI: 10.1007/s40010-023-00831-1
M. S. Devapriya, Kartick Biswas, Chandrasekhar Murapaka, Arabinda Haldar

Domain walls in cylindrical nanowires exhibit several intriguing properties making them suitable for spintronic applications. Here, we report the microwave response of domain walls in cylindrical nanowires using micromagnetic simulations. The domain walls exhibit two kinds of reversal modes, namely vortex reversal mode and transverse reversal mode. The present study is confined to the sub-50-nm-diameter cylindrical nanowires, where the transverse domain wall is a stable configuration. The microwave properties are highly dependent on demagnetizing fields that exist along the nanowire. Two well distinguishable modes are observed in the nanowires, one that arises from the domain wall and the other due to the inhomogeneities at the edges. Both modes are found to be sensitive to the diameter of the cylindrical nanowire. The results reveal additional functionality of the DWs in cylindrical nanowires based on high-frequency spin dynamics for microwave applications.

圆柱形纳米线中的畴壁表现出几个有趣的特性,使它们适合自旋电子应用。在这里,我们报道了用微磁模拟的圆柱形纳米线畴壁的微波响应。畴壁呈现两种反转模式,即涡旋反转模式和横向反转模式。目前的研究仅限于直径小于50纳米的圆柱形纳米线,其中横向畴壁是一种稳定的结构。微波特性高度依赖于沿纳米线存在的退磁场。在纳米线中观察到两种很好区分的模式,一种是由畴壁产生的,另一种是由于边缘的不均匀性引起的。发现这两种模式对圆柱形纳米线的直径都很敏感。结果揭示了基于微波应用的高频自旋动力学的圆柱形纳米线中的DWs的附加功能。
{"title":"Magnetization Dynamics of Domain Walls in Cylindrical Nanowires","authors":"M. S. Devapriya,&nbsp;Kartick Biswas,&nbsp;Chandrasekhar Murapaka,&nbsp;Arabinda Haldar","doi":"10.1007/s40010-023-00831-1","DOIUrl":"10.1007/s40010-023-00831-1","url":null,"abstract":"<div><p>Domain walls in cylindrical nanowires exhibit several intriguing properties making them suitable for spintronic applications. Here, we report the microwave response of domain walls in cylindrical nanowires using micromagnetic simulations. The domain walls exhibit two kinds of reversal modes, namely vortex reversal mode and transverse reversal mode. The present study is confined to the sub-50-nm-diameter cylindrical nanowires, where the transverse domain wall is a stable configuration. The microwave properties are highly dependent on demagnetizing fields that exist along the nanowire. Two well distinguishable modes are observed in the nanowires, one that arises from the domain wall and the other due to the inhomogeneities at the edges. Both modes are found to be sensitive to the diameter of the cylindrical nanowire. The results reveal additional functionality of the DWs in cylindrical nanowires based on high-frequency spin dynamics for microwave applications.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4756646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Novel Approach in the Light of Fuzzy Multiset Topology 基于模糊多集拓扑的一种新方法
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-16 DOI: 10.1007/s40010-023-00834-y
Md Mirazul Hoque, Baby Bhattacharya, Binod Chandra Tripathy

In the present article, we present the notions of fuzzy multiset interior and closure operator and study their basic characterizations and properties. Furthermore, using the fuzzy multiset closure operator we introduce the notion of fuzzy multiset closure space and present its related properties. Finally, the notion of connectedness in the context of fuzzy multiset topology is discussed and some properties are investigated.

本文给出了模糊多集内算子和闭算子的概念,并研究了它们的基本表征和性质。利用模糊多集闭包算子引入了模糊多集闭包空间的概念,并给出了模糊多集闭包空间的相关性质。最后,讨论了模糊多集拓扑中连通性的概念,并研究了一些性质。
{"title":"A Novel Approach in the Light of Fuzzy Multiset Topology","authors":"Md Mirazul Hoque,&nbsp;Baby Bhattacharya,&nbsp;Binod Chandra Tripathy","doi":"10.1007/s40010-023-00834-y","DOIUrl":"10.1007/s40010-023-00834-y","url":null,"abstract":"<div><p>In the present article, we present the notions of fuzzy multiset interior and closure operator and study their basic characterizations and properties. Furthermore, using the fuzzy multiset closure operator we introduce the notion of fuzzy multiset closure space and present its related properties. Finally, the notion of connectedness in the context of fuzzy multiset topology is discussed and some properties are investigated.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83303228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Account of Natural Material-Based Nonvolatile Memory Device 基于天然材料的非易失性存储器件的叙述
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-15 DOI: 10.1007/s40010-023-00830-2
Farhana Yasmin Rahman, Debajyoti Bhattacharjee, Syed Arshad Hussain

The development in electronic sector has brought a remarkable change in the lifestyle of mankind. At the same time, this technological advancement results in adverse effect on environment due to the use of toxic and non-degradable materials in various electronic devices. With the emergence of environmental problems, the green, reprogrammable, biodegradable, sustainable and environmental-friendly electronic devices have become one of the best solutions for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Natural material has emerged as the promising candidate for the next generation of electronic devices due to its easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This review targets the characteristics, advancements, role, limitations, and prospects of using natural materials as the functional layer of a resistive switching memory device with a primary focus on the switching/memory properties. Among the available memory devices, resistive random access memory, write once read many unipolar memory, etc., devices have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. The motivation behind this work is to promote the use of natural materials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic devices.

电子行业的发展给人类的生活方式带来了显著的变化。同时,由于在各种电子设备中使用了有毒和不可降解的材料,这种技术进步对环境造成了不利影响。随着环境问题的出现,绿色、可编程、可生物降解、可持续和环保的电子设备已成为保护我们的环境免受有害物质侵害的最佳解决方案之一,同时又不影响电子工业的发展。天然材料因其易于加工、透明、灵活、资源丰富、可持续性、可回收性和提取简单而成为下一代电子设备的有希望的候选者。本文综述了利用天然材料作为阻性开关记忆器件功能层的特点、进展、作用、局限性和前景,重点介绍了开关/记忆特性。在现有的存储器件中,电阻式随机存取存储器、写一次读多次单极存储器等,由于结构简单、可扩展性高、功耗低,具有成为下一代非易失性存储器的巨大潜力。这项工作背后的动机是促进天然材料在电子设备中的使用,并吸引研究人员走向与电子设备相关的危险问题的绿色解决方案。
{"title":"An Account of Natural Material-Based Nonvolatile Memory Device","authors":"Farhana Yasmin Rahman,&nbsp;Debajyoti Bhattacharjee,&nbsp;Syed Arshad Hussain","doi":"10.1007/s40010-023-00830-2","DOIUrl":"10.1007/s40010-023-00830-2","url":null,"abstract":"<div><p>The development in electronic sector has brought a remarkable change in the lifestyle of mankind. At the same time, this technological advancement results in adverse effect on environment due to the use of toxic and non-degradable materials in various electronic devices. With the emergence of environmental problems, the green, reprogrammable, biodegradable, sustainable and environmental-friendly electronic devices have become one of the best solutions for protecting our environment from hazardous materials without compromising the growth of the electronic industry. Natural material has emerged as the promising candidate for the next generation of electronic devices due to its easy processing, transparency, flexibility, abundant resources, sustainability, recyclability, and simple extraction. This review targets the characteristics, advancements, role, limitations, and prospects of using natural materials as the functional layer of a resistive switching memory device with a primary focus on the switching/memory properties. Among the available memory devices, resistive random access memory, write once read many unipolar memory, etc., devices have a huge potential to become the nonvolatile memory of the next generation owing to their simple structure, high scalability, and low power consumption. The motivation behind this work is to promote the use of natural materials in electronic devices and attract researchers toward a green solution of hazardous problems associated with the electronic devices.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4616661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Free Convection in a Porous Enclosure by Virtue of Sinusoidal Heating and Cooling on Lateral Side: A Variable Periodicity Perspective 利用侧面正弦加热和冷却的多孔外壳中的自由对流:一个可变周期的观点
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-15 DOI: 10.1007/s40010-023-00833-z
Saurabh Kapoor, Kumari Manju

A numerical study has been made on free convection in the anisotropic porous enclosure. By nonuniform sinusoidal heating, flow is induced on the right side wall along with three adiabatic walls. The principal directions of the gravity vector have been taken obliquely to the permeability tensor. The performed study is conducted by using the Brinkman-extended non-Darcy model. The vorticity–streamfunction approach of the spectral element method is applied to solve the governing equations. The significance is specified on the impact of the periodicity parameter (N), local heat transfer rate (Nu(_{y})) along with the flow mechanism in the enclosure with reference to orientation angle ((phi)), permeability ratio (K(^{*})) and anisotropic parameters. The outcome for odd N shows that a particular heat transfer at (y=1.5) is pointed extreme. Additionally, the increase in the permeability media while switching K(^{*}) from 1 to 0.2 increases the heat transfer rate. This increment occurs at the right corner, below the enclosure’s right. Moreover, considering every N, the profiles of Nu(_{y}) in both media (isotropic and anisotropic) are similar. However, it varies slightly for N(=2). Remarkably, this analysis shows that the flow pattern has been affected by distinct N via boundary conditions of temperatures. Consequently, the local heat transfer phenomena have also been affected.

本文对各向异性孔壳内的自由对流进行了数值研究。通过非均匀正弦加热,沿三个绝热壁在右侧壁上诱导流动。重力矢量的主方向斜向渗透率张量。本研究采用Brinkman-extended非达西模型。采用谱元法的涡流函数方法求解控制方程。参考取向角((phi))、渗透率比(K (^{*}))和各向异性参数,明确了周期性参数(N)、局部换热率(Nu (_{y}))以及壳体内流动机理的影响意义。奇数N的结果表明,在(y=1.5)处的特定传热是指向极端的。此外,当K (^{*})从1切换到0.2时,渗透率介质的增加增加了换热率。此增量发生在右角,在外壳的右侧下方。此外,考虑到每一个N, Nu (_{y})在两种介质(各向同性和各向异性)中的分布是相似的。但是,对于N (=2),它略有不同。值得注意的是,该分析表明,不同的N通过温度的边界条件影响了流动模式。因此,局部换热现象也受到了影响。
{"title":"Free Convection in a Porous Enclosure by Virtue of Sinusoidal Heating and Cooling on Lateral Side: A Variable Periodicity Perspective","authors":"Saurabh Kapoor,&nbsp;Kumari Manju","doi":"10.1007/s40010-023-00833-z","DOIUrl":"10.1007/s40010-023-00833-z","url":null,"abstract":"<div><p>A numerical study has been made on free convection in the anisotropic porous enclosure. By nonuniform sinusoidal heating, flow is induced on the right side wall along with three adiabatic walls. The principal directions of the gravity vector have been taken obliquely to the permeability tensor. The performed study is conducted by using the Brinkman-extended non-Darcy model. The vorticity–streamfunction approach of the spectral element method is applied to solve the governing equations. The significance is specified on the impact of the periodicity parameter (<i>N</i>), local heat transfer rate (Nu<span>(_{y})</span>) along with the flow mechanism in the enclosure with reference to orientation angle (<span>(phi)</span>), permeability ratio (<i>K</i><span>(^{*})</span>) and anisotropic parameters. The outcome for odd <i>N</i> shows that a particular heat transfer at <span>(y=1.5)</span> is pointed extreme. Additionally, the increase in the permeability media while switching <i>K</i><span>(^{*})</span> from 1 to 0.2 increases the heat transfer rate. This increment occurs at the right corner, below the enclosure’s right. Moreover, considering every <i>N</i>, the profiles of Nu<span>(_{y})</span> in both media (isotropic and anisotropic) are similar. However, it varies slightly for <i>N</i><span>(=2)</span>. Remarkably, this analysis shows that the flow pattern has been affected by distinct <i>N</i> via boundary conditions of temperatures. Consequently, the local heat transfer phenomena have also been affected.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87252085","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Two-Phase Ratio Estimation Using Ordinal and Ratio Auxiliary Variables in Non-response 无响应情况下使用序和比辅助变量的两相比估计
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-09 DOI: 10.1007/s40010-023-00824-0
R. R. Sinha, Bharti Khanna

In this paper, problem of estimation of ratio of two population means has been discussed in presence of non-response. A wider two-phase class of estimators has been suggested using ratio and ordinal auxiliary variables under incomplete data due to non-response. Expressions of bias and mean square error of the suggested class of estimators have been derived, and minimum value of mean square error has been obtained under optimum conditions. The properties of the suggested class of estimators have been studied under fixed budget as well as precision. The increase in efficiency of the suggested class of estimators over the relevant estimators has been demonstrated by real data analysis. On the ground of theoretical and empirical studies, it has been explained that suggested class of estimators is efficient than existing conventional estimators.

本文讨论了在无响应情况下两总体均值之比的估计问题。在不完全数据无响应的情况下,提出了一种使用比率和序数辅助变量的广义两相估计器。推导了这类估计器的偏置和均方误差的表达式,得到了最优条件下均方误差的最小值。在固定预算和精度条件下,研究了这类估计量的性质。实际数据分析证明了所建议的估计器比相关估计器效率的提高。在理论和实证研究的基础上,说明了这类估计量比现有的常规估计量更有效。
{"title":"Two-Phase Ratio Estimation Using Ordinal and Ratio Auxiliary Variables in Non-response","authors":"R. R. Sinha,&nbsp;Bharti Khanna","doi":"10.1007/s40010-023-00824-0","DOIUrl":"10.1007/s40010-023-00824-0","url":null,"abstract":"<div><p>In this paper, problem of estimation of ratio of two population means has been discussed in presence of non-response. A wider two-phase class of estimators has been suggested using ratio and ordinal auxiliary variables under incomplete data due to non-response. Expressions of bias and mean square error of the suggested class of estimators have been derived, and minimum value of mean square error has been obtained under optimum conditions. The properties of the suggested class of estimators have been studied under fixed budget as well as precision. The increase in efficiency of the suggested class of estimators over the relevant estimators has been demonstrated by real data analysis. On the ground of theoretical and empirical studies, it has been explained that suggested class of estimators is efficient than existing conventional estimators.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://link.springer.com/content/pdf/10.1007/s40010-023-00824-0.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89643948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories 数据存储和大脑启发计算的新兴记忆技术:印度研究见解的全球视角,重点是电阻性记忆
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-06-04 DOI: 10.1007/s40010-023-00828-w
Sandip Lashkare, Wasi Uddin, Kumar Priyadarshi, Udayan Ganguly

This article is an overview of emerging memory materials and their role in advanced brain-inspired computing technologies. It starts with the progress of memory technologies over the last 50 years along with emergence and dominance of NAND flash in the memory market. Though flash is currently leading the memory market due to its high volume manufacturing and low cost, it has a latency gap with dynamic random access memory. To address this, various nonvolatile memories have been explored across the world potentially to replace flash. Here, an overview of various major emerging nonvolatile memory (NVM) technologies is presented. Along with the global view of NVMs as their current status as a storage solution, the research of NVMs in India is discussed briefly with a focus on resistance random access memory and phase change memory. Further, the need of brain-inspired advanced computing technologies like neuromorphic computing, in-memory computing are discussed along with the utility of the NVMs for such brain-inspired computing technologies. Finally, various NVMs are presented for their unique characteristic to mimic synapse, neuron functionalities as required for neuromorphic computing and for in-memory computing solutions.

本文概述了新兴的记忆材料及其在先进的大脑启发计算技术中的作用。它从过去50年来存储技术的进步以及NAND闪存在存储市场的出现和主导地位开始。闪存虽然以大批量生产和低成本等优势占据了存储器市场的主导地位,但与动态随机存储器相比,其延迟时间存在差距。为了解决这个问题,世界各地都在探索各种可能取代闪存的非易失性存储器。在这里,概述了各种主要的新兴非易失性存储器(NVM)技术。随着NVMs作为一种存储解决方案的全球观点,简要讨论了NVMs在印度的研究,重点是电阻随机存取存储器和相变存储器。此外,我们还讨论了对大脑启发的先进计算技术的需求,如神经形态计算、内存计算,以及nvm在这些大脑启发的计算技术中的应用。最后,介绍了各种nvm的独特特性,以模拟神经形态计算和内存计算解决方案所需的突触、神经元功能。
{"title":"Emerging Memory Technologies for Data Storage and Brain-Inspired Computation: A Global View with Indian Research Insights with a Focus on Resistive Memories","authors":"Sandip Lashkare,&nbsp;Wasi Uddin,&nbsp;Kumar Priyadarshi,&nbsp;Udayan Ganguly","doi":"10.1007/s40010-023-00828-w","DOIUrl":"10.1007/s40010-023-00828-w","url":null,"abstract":"<div><p>This article is an overview of emerging memory materials and their role in advanced brain-inspired computing technologies. It starts with the progress of memory technologies over the last 50 years along with emergence and dominance of NAND flash in the memory market. Though flash is currently leading the memory market due to its high volume manufacturing and low cost, it has a latency gap with dynamic random access memory. To address this, various nonvolatile memories have been explored across the world potentially to replace flash. Here, an overview of various major emerging nonvolatile memory (NVM) technologies is presented. Along with the global view of NVMs as their current status as a storage solution, the research of NVMs in India is discussed briefly with a focus on resistance random access memory and phase change memory. Further, the need of brain-inspired advanced computing technologies like neuromorphic computing, in-memory computing are discussed along with the utility of the NVMs for such brain-inspired computing technologies. Finally, various NVMs are presented for their unique characteristic to mimic synapse, neuron functionalities as required for neuromorphic computing and for in-memory computing solutions.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4508267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Kagome Magnets: The Emerging Materials for Spintronic Memories Kagome磁体:用于自旋电子记忆的新兴材料
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-05-21 DOI: 10.1007/s40010-023-00823-1
Niru Chowdhury, Kacho Imtiyaz Ali Khan, Himanshu Bangar, Pankhuri Gupta, Ram Singh Yadav, Rekha Agarwal, Akash Kumar, Pranaba Kishor Muduli

Recent developments in the field of topological quantum materials have stimulated the search for materials that could serve as the building blocks for next-generation memory applications. Due to their intriguing topological properties, such as flat bands, Dirac nodes, and Weyl points, kagome magnets are anticipated to be the leading materials for this application. In this mini review, we discuss some of the recent advancements in binary kagome magnets, both ferromagnetic and anti-ferromagnetic, for use as emerging memory devices. First, we discuss ferromagnetic kagome magnets, specifically Fe(_3)Sn(_2), and then we discuss non-collinear antiferromagnetic kagome magnets, Mn(_3)Sn and Mn(_3)Ir. Finally, we discuss collinear antiferromagnetic kagome magnet, FeSn. In each of the aforementioned sections, we begin with a discussion of their topological, structural, and magnetic properties, followed by application-specific studies such as spin-orbit torques (SOT). In the final section, we discuss the current state of kagome magnets for efficient, faster, denser, and reliable memory technologies with focus on the SOT switching and observation/manipulation of skyrmions.

拓扑量子材料领域的最新发展刺激了对可作为下一代存储器应用构建块的材料的研究。由于其有趣的拓扑特性,如平带、狄拉克节点和Weyl点,kagome磁铁有望成为这一应用的主要材料。在这篇简短的综述中,我们讨论了用于新兴存储器件的铁磁性和反铁磁性二元kagome磁体的一些最新进展。首先,我们讨论铁磁kagome磁体,特别是Fe (_3) Sn (_2),然后我们讨论非共线反铁磁kagome磁体Mn (_3) Sn和Mn (_3) Ir。最后,我们讨论了共线反铁磁kagome磁体FeSn。在上述的每一节中,我们首先讨论它们的拓扑,结构和磁性,然后是特定应用的研究,如自旋轨道扭矩(SOT)。在最后一节中,我们讨论了kagome磁体用于高效、更快、更密集和可靠的存储技术的现状,重点是SOT开关和skyrmions的观察/操作。
{"title":"Kagome Magnets: The Emerging Materials for Spintronic Memories","authors":"Niru Chowdhury,&nbsp;Kacho Imtiyaz Ali Khan,&nbsp;Himanshu Bangar,&nbsp;Pankhuri Gupta,&nbsp;Ram Singh Yadav,&nbsp;Rekha Agarwal,&nbsp;Akash Kumar,&nbsp;Pranaba Kishor Muduli","doi":"10.1007/s40010-023-00823-1","DOIUrl":"10.1007/s40010-023-00823-1","url":null,"abstract":"<div><p>Recent developments in the field of topological quantum materials have stimulated the search for materials that could serve as the building blocks for next-generation memory applications. Due to their intriguing topological properties, such as flat bands, Dirac nodes, and Weyl points, <i>kagome magnets</i> are anticipated to be the leading materials for this application. In this mini review, we discuss some of the recent advancements in binary kagome magnets, both ferromagnetic and anti-ferromagnetic, for use as emerging memory devices. First, we discuss ferromagnetic kagome magnets, specifically Fe<span>(_3)</span>Sn<span>(_2)</span>, and then we discuss non-collinear antiferromagnetic kagome magnets, Mn<span>(_3)</span>Sn and Mn<span>(_3)</span>Ir. Finally, we discuss collinear antiferromagnetic kagome magnet, FeSn. In each of the aforementioned sections, we begin with a discussion of their topological, structural, and magnetic properties, followed by application-specific studies such as spin-orbit torques (SOT). In the final section, we discuss the current state of kagome magnets for efficient, faster, denser, and reliable memory technologies with focus on the SOT switching and observation/manipulation of skyrmions.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"4839040","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Extraction of Lignosulfonate from Jute Sticks and its Application in Lead–Acid Battery 黄麻中木质素磺酸盐的提取及其在铅酸蓄电池中的应用
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-05-17 DOI: 10.1007/s40010-023-00827-x
Sandip Bose, Syamal Kanti Chakrabarti, Uma Sankar Sarma

Lignosulfonate was extracted from jute sticks by acid sulfite pulping and purified by two alternative chemical processes. The lignosulfonate from jute was compared with commercially available products by infrared spectroscopy and X-ray diffraction techniques. The jute sourced lignosulfonates showed crystalline peaks and higher solubility in water. The characteristic FTIR peaks of lignosulfonate were observed. The jute sourced lignosulfonate was used to construct the negative active mass (NAM) of lead–acid battery (LAB). The constructed LAB was subjected to standard charging and discharging cycles at 20 h, 10 h and 5 h. The normalized capacity of the constructed cells at different discharge rate was used to compare the performance of lignosulfonates from jute with a commercial sample. It showed better performance at lower discharge rates of 20 h and 10 h, while under faster discharge cycles of 5 h, the performance of the NAM plates containing jute sourced lignosulfonate showed slightly lower specific charge capacity in comparison with standard commercial product. The performance studies indicated that jute sticks could serve as a competitive source of sodium lignosulfonate for application in LAB involving lower rate discharge cycles as in solar power battery. As an alternative to conventionally used wood for commercial manufacture of lignosulfonates, lignosulfonate extracted from an inexpensive, annually renewable agro-waste, jute stick, could open new manufacturing stations and contribute to conservation of the environment.

以黄麻为原料,采用亚硫酸法制浆提取木质素磺酸盐,经两种不同的化学工艺提纯。用红外光谱和x射线衍射技术对黄麻中木质素磺酸盐与市售产品进行了比较。以黄麻为原料制备的木质素磺酸盐具有明显的结晶性和较高的水溶性。观察了木质素磺酸盐的特征FTIR峰。以黄麻为原料制备了铅酸电池的负活性质量(NAM)。构建的LAB在20 h, 10 h和5 h进行标准充放电循环。使用不同放电速率下构建的电池的标准化容量来比较黄麻木质素磺酸盐与商业样品的性能。在较低的放电周期为20 h和10 h时表现出较好的性能,而在更快的放电周期为5 h时,含有黄麻源木质素磺酸盐的NAM板的性能与标准商品相比略有降低。性能研究表明,黄麻棒可以作为木质素磺酸钠的竞争来源,应用于低倍率放电循环的LAB,如太阳能电池。作为商业生产木质素磺酸盐的传统木材的替代品,从廉价的、每年可再生的农业废料黄麻中提取的木质素磺酸盐可以开辟新的生产基地,并有助于保护环境。
{"title":"Extraction of Lignosulfonate from Jute Sticks and its Application in Lead–Acid Battery","authors":"Sandip Bose,&nbsp;Syamal Kanti Chakrabarti,&nbsp;Uma Sankar Sarma","doi":"10.1007/s40010-023-00827-x","DOIUrl":"10.1007/s40010-023-00827-x","url":null,"abstract":"<div><p>Lignosulfonate was extracted from jute sticks by acid sulfite pulping and purified by two alternative chemical processes. The lignosulfonate from jute was compared with commercially available products by infrared spectroscopy and X-ray diffraction techniques. The jute sourced lignosulfonates showed crystalline peaks and higher solubility in water. The characteristic FTIR peaks of lignosulfonate were observed. The jute sourced lignosulfonate was used to construct the negative active mass (NAM) of lead–acid battery (LAB). The constructed LAB was subjected to standard charging and discharging cycles at 20 h, 10 h and 5 h. The normalized capacity of the constructed cells at different discharge rate was used to compare the performance of lignosulfonates from jute with a commercial sample. It showed better performance at lower discharge rates of 20 h and 10 h, while under faster discharge cycles of 5 h, the performance of the NAM plates containing jute sourced lignosulfonate showed slightly lower specific charge capacity in comparison with standard commercial product. The performance studies indicated that jute sticks could serve as a competitive source of sodium lignosulfonate for application in LAB involving lower rate discharge cycles as in solar power battery. As an alternative to conventionally used wood for commercial manufacture of lignosulfonates, lignosulfonate extracted from an inexpensive, annually renewable agro-waste, jute stick, could open new manufacturing stations and contribute to conservation of the environment.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76835481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
NavIC Positioning from the Secondary Service Region and Beyond: A Study Using Compact NavIC Modules 二级服务区及以外的导航定位:基于紧凑型导航模块的研究
IF 0.9 4区 综合性期刊 Q2 Physics and Astronomy Pub Date : 2023-05-17 DOI: 10.1007/s40010-023-00825-z
Atanu Santra, Somnath Mahato, Surajit Kundu, Anindya Bose

NavIC is a regional navigation system developed by India; NavIC signal is available in the central/primary service area covering the Indian landmass and 1500 km around India, and for the areas falling in the extended/secondary service region laying between latitude 30° S to 50° N and longitude 30° E to 130° E. Advantages and quality of NavIC-based position solution has been reported for the secondary service area based on simulated data. In this manuscript, real-time NMEA data are collected from NSSTC, Al Ain, UAE, NIMT, Pathum Thani, Thailand, falling within the extended/secondary service region and from TUMSAT, Tokyo, Japan, situated just outside the extended service region using compact, low-cost NavIC modules. Spread of the of position solution in 2-dimension, and its correspondence with rank defect satellite geometry is presented. The precision of solution and North-East-Up error plots are also estimated for those locations. Real-time data from the locations points towards the advantage of having NavIC satellites placed in GEO or IGSO from high elevation angles have been discussed towards seamless navigation operation in GNSS + NavIC hybrid operation within the constrained or degraded GNSS satellite visibility situations.

NavIC是印度开发的区域导航系统;在覆盖印度大陆和印度周边1500公里的中央/主要服务区,以及位于北纬30°S ~ 50°N和东经30°E ~ 130°E之间的扩展/次要服务区区域,可以获得NavIC信号。本文报道了基于模拟数据的基于NavIC的次要服务区定位解决方案的优势和质量。在本文中,实时NMEA数据收集自NSSTC, Al Ain, UAE, NIMT, Pathum Thani,泰国,属于扩展/次要服务区域,从TUMSAT,东京,日本,位于扩展服务区域之外,使用紧凑,低成本的NavIC模块。给出了位置解在二维空间的推广及其与秩缺陷卫星几何的对应关系。对这些地点的解和东北向上误差图的精度进行了估计。在GNSS卫星能见度受限或降低的情况下,讨论了在GNSS + NavIC混合操作中,从高仰角将NavIC卫星置于GEO或IGSO中的优势,以实现无缝导航操作。
{"title":"NavIC Positioning from the Secondary Service Region and Beyond: A Study Using Compact NavIC Modules","authors":"Atanu Santra,&nbsp;Somnath Mahato,&nbsp;Surajit Kundu,&nbsp;Anindya Bose","doi":"10.1007/s40010-023-00825-z","DOIUrl":"10.1007/s40010-023-00825-z","url":null,"abstract":"<div><p>NavIC is a regional navigation system developed by India; NavIC signal is available in the central/primary service area covering the Indian landmass and 1500 km around India, and for the areas falling in the extended/secondary service region laying between latitude 30° S to 50° N and longitude 30° E to 130° E. Advantages and quality of NavIC-based position solution has been reported for the secondary service area based on simulated data. In this manuscript, real-time NMEA data are collected from NSSTC, Al Ain, UAE, NIMT, Pathum Thani, Thailand, falling within the extended/secondary service region and from TUMSAT, Tokyo, Japan, situated just outside the extended service region using compact, low-cost NavIC modules. Spread of the of position solution in 2-dimension, and its correspondence with rank defect satellite geometry is presented. The precision of solution and North-East-Up error plots are also estimated for those locations. Real-time data from the locations points towards the advantage of having NavIC satellites placed in GEO or IGSO from high elevation angles have been discussed towards seamless navigation operation in GNSS + NavIC hybrid operation within the constrained or degraded GNSS satellite visibility situations.</p></div>","PeriodicalId":744,"journal":{"name":"Proceedings of the National Academy of Sciences, India Section A: Physical Sciences","volume":null,"pages":null},"PeriodicalIF":0.9,"publicationDate":"2023-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72601900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"综合性期刊","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Proceedings of the National Academy of Sciences, India Section A: Physical Sciences
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1