Near-infrared (NIR) phosphorescence has emerged as a highly promising yet challenging research area, with potential applications in NIR optoelectronic devices, telecommunications, sensing, bioimaging, and beyond. This review discusses the exploitation of metal⋯metal (M⋯M) interactions to advance NIR phosphorescent materials, focusing on their role in enhancing photophysical properties and enabling novel applications. M⋯M interactions in closed-shell d8/d10 (PtII, RhI, NiII, AuI) complexes offer a promising strategy to generate low-energy triplet excited states with enhanced radiative decay. This review examines recent advances in NIR phosphorescent materials driven by M⋯M interactions. We demonstrate how the triplet excited state—3MMLCT (metal-metal-to-ligand charge transfer) or a metal-centered 3[dσ*→pσ] transition—reduces HOMO-LUMO energy gaps and modulates spin-orbit coupling (SOC), enabling phosphorescent emissions beyond 700 nm. This review is categorized into two distinct design principles: the covalent “bridging ligand” approach for stable, high-performance emitters, and the supramolecular “self-assembly” strategy for stimuli-responsive, tunable luminescence. We provide insights into the structure-property relationships governing the photophysical properties, revealing how M⋯M distance, ligand rigidity, and aggregate structures dictate NIR phosphorescence. Beyond summarizingthe state of the art, this review outlines some design principles for the next generation of NIR phosphorescent materials.
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