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Stabilization of Compressed Earth Blocks (CEB) by Pozzolana Based Phosphate Geopolymer: Physico-Mechanical, Structural and Microstructural Investigations 磷酸酯磷酸酯地聚合物对压缩土块(CEB)的稳定性:物理力学、结构和微观结构研究
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3855724
Tchouateu Kamwa Rolande Aurelie, Sylvain Tome, Chongouang Judicaёl, E. Idriss, A. Spieß, Markus N. A. Fetzer, K. Elie, C. Janiak, Marie-Annie Etoh
This work proposes the poly(phospho-ferro-siloxo) binder resulting from the phosphoric acid activation of pozzolana (PZ) as a friendly stabilizing agent for compressed earth bricks (CEBs). Different proportions of pozzolana were incorporated into the clay soil (5, 10, 15 and 20 wt%). The CEBs were cured at room temperature and at 70 °C. Powder X-ray diffraction (PXRD), Fourier transformed infrared spectroscopy (FTIR), scanning electron microscopy (SEM) with energy-dispersive X-ray (EDX) spectroscopy, water absorption as well as mechanical strength tests were used to characterize the 28 days aged CEBs. The compressive strength of CEBs varies from 9.2 to 20.6 MPa and 10.2 to 42.8 MPa at room temperature and 70 °C, respectively. Water absorption ranges from 6 to 11% at 25 °C and 8 to 12% at 70 °C. This work showed that ground pozzolana can be used similarly as calcined laterites and clays for efficient geopolymerization stabilization of compressed earth bricks.
本文提出了由磷酸活化灰火山灰(PZ)产生的聚磷硅氧铁(PZ)粘合剂作为压缩土砖(ceb)的友好稳定剂。在粘土中掺入不同比例的灰火山灰(5%、10%、15%和20%)。ceb分别在室温和70℃下固化。采用粉末x射线衍射(PXRD)、傅里叶变换红外光谱(FTIR)、扫描电子显微镜(SEM)和能量色散x射线(EDX)光谱、吸水率和机械强度测试对28 d龄ceb进行了表征。在室温和70℃下,ceb的抗压强度分别为9.2 ~ 20.6 MPa和10.2 ~ 42.8 MPa。25℃时吸水率为6% ~ 11%,70℃时为8% ~ 12%。这项工作表明,地面火山灰可以像煅烧红土和粘土一样用于有效的地聚合稳定压缩土砖。
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引用次数: 3
Deformation of Aluminum in Situ Sem and Full Field Measurements by Digital Image Correlation: Evidence of Concomitant Crystal Slip and Grain Boundary Sliding 铝的原位扫描电镜变形和数字图像相关的全场测量:伴随晶体滑移和晶界滑动的证据
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3922862
A. Dimanov, A. El Sabbagh, J. Raphanel, T. Le, M. Bornert, S. Hallais, A. Tanguy
Mechanical testing in situ scanning electron microscopy (SEM) has become a current technique for multiscale micromechanical investigation of polycrystalline materials, because direct observation of deformation microstructures allows identification of strain heterogeneities and related mechanisms. Yet, most of the studies are based on the inherited post mortem microstructures, thus precluding to unravel the local loading history, to understand the development of localization patterns, the potential interactions of concomitant mechanisms and to quantify their respective contributions to the overall strain. We therefore developed a novel experimental setup for thermomechanical testing in situ SEM, especially suited for full strain field measurements based on digital image correlation (DIC) from the sample scale, to the scales of the aggregate and the single grain. We present results obtained during simple compression, at controlled displacement rate and at temperatures up to 400°C, for polycrystalline aluminum presenting randomly oriented coarse grains (ca. 300 μm in size). According to the different scales of interest, specific surface marking patterns were realized by electron microlithography. Kinematic analysis by digital image correlation (DIC) allowed to retrieve full surface strain fields. The latter evidenced that the overall viscoplastic response was dominated by crystal slip plasticity. Increasing temperature favored the activation of non-octahedral slip, but also substantial and continuous contribution of grain boundary sliding (GBS). We suggest the latter mechanism as necessary to accommodate local plastic incompatibilities between neighboring grains.
原位扫描电镜(SEM)的力学测试已成为当前多晶材料多尺度微观力学研究的一种技术,因为直接观察变形微观结构可以识别应变非均质性及其相关机制。然而,大多数研究都是基于继承的死后微观结构,因此无法揭示局部加载历史,了解局部模式的发展,伴随机制的潜在相互作用以及量化它们各自对整体应变的贡献。因此,我们开发了一种新的原位SEM热力学测试实验装置,特别适用于基于数字图像相关(DIC)的全应变场测量,从样品尺度到骨料和单粒尺度。我们展示了在控制位移速率和温度高达400°C的简单压缩下获得的结果,多晶铝呈现随机取向的粗晶粒(尺寸约为300 μm)。根据不同的兴趣尺度,利用电子显微光刻技术实现了特定的表面标记模式。通过数字图像相关(DIC)进行运动学分析,可以获得完整的表面应变场。后者证明了整体粘塑性响应以晶体滑移塑性为主。温度的升高有利于非八面体滑移的激活,但也对晶界滑移(GBS)有实质性的持续贡献。我们认为后一种机制是必要的,以适应邻近晶粒之间的局部塑性不相容。
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引用次数: 1
Measuring Radiation Enhanced Diffusion Through in situ Ion Radiation Induced Sintering of Oxide Nanoparticles 通过原位离子辐射诱导烧结氧化纳米颗粒测量辐射增强扩散
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3951050
N. Madden, S. Briggs, Diana Perales, T. Boyle, K. Hattar, J. Krogstad
Radiation enhanced diffusion often contributes significantly to the evolution of microstructures subject to radiation but can be challenging to predict in complex nonmetallic material systems. Here, microstructural evolution in the presence of ion radiation was leveraged to explore the underlying transport phenomenon. Specifically, in situ ion irradiation of nanoparticles reveal rapid densification at room temperature for nanoparticles of cerium oxide (CeO2) and yttria stabilized zirconia (YSZ) but not for magnesium oxide (MgO) or silicon carbide (SiC). This is attributed to rapid diffusion of radiation induced interstitial defects to the high density of free surfaces in the nanoparticle agglomerates. When these observations are combined with image processing and application of a simple two-sphere sintering model, radiation enhanced diffusivity values can be calculated. In situ irradiation of YSZ nanoparticles over a broader temperature range, 50 K to 1073 K, clearly revealed a transition between three distinct rate limiting regimes: (i) low temperature, sink-limited kinetics, (ii) intermediate temperature, recombination-limited kinetics, and (iii) at high-temperature the densification is consistent with thermally activated diffusion kinetics. The high spatial and temporal resolution provided by the in situ methodology is critical to confidently distinguishing these regimes in nonmetallic oxides. While only four nonmetallic nanoparticle systems are presented here (YSZ, CeO2, SiC, and MgO), application of this methodology to the readily accessible, diverse catalog of nanoparticle chemistries and morphologies will allow for rapid exploration of radiation-enhanced diffusion behavior in a broader range of complex nonmetallic systems without the need for tracers.
辐射增强扩散通常对受辐射影响的微观结构的演变有重要贡献,但在复杂的非金属材料系统中,预测可能具有挑战性。在这里,利用离子辐射存在下的微观结构演变来探索潜在的输运现象。具体来说,纳米粒子的原位离子辐照显示,在室温下,氧化铈(CeO2)和钇稳定氧化锆(YSZ)纳米粒子会快速致密化,而氧化镁(MgO)和碳化硅(SiC)纳米粒子则不会。这是由于辐射引起的间隙缺陷迅速扩散到纳米颗粒团块中高密度的自由表面。将这些观测结果与图像处理和简单的双球烧结模型相结合,可以计算出辐射增强的扩散系数值。在50 K至1073 K的较宽温度范围内,原位辐照YSZ纳米颗粒,清楚地揭示了三种不同的速率限制机制之间的转变:(i)低温,沉降限制动力学,(ii)中温,重组限制动力学,以及(iii)高温下致密化与热激活扩散动力学一致。就地方法提供的高空间和时间分辨率对于自信地区分非金属氧化物中的这些状态至关重要。虽然这里只介绍了四种非金属纳米颗粒系统(YSZ、CeO2、SiC和MgO),但将这种方法应用于易于获取的、多样化的纳米颗粒化学和形态目录,将允许在更广泛的复杂非金属系统中快速探索辐射增强的扩散行为,而不需要示踪剂。
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引用次数: 1
The Role of Β-Zr in Zr-2.5nb Alloys During Aqueous Corrosion: A Multi-Technique Study Β-Zr在Zr-2.5nb合金水溶液腐蚀中的作用:多技术研究
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3779737
Junliang Liu, G. He, A. Callow, Kexue Li, K. Moore, H. Nordin, Michael Moody, S. Lozano-Perez, C. Grovenor
Zr–2.5Nb alloy are used as pressure tubes in Canadian Deuterium Uranium (CANDU) nuclear reactors, and the typical starting microstructure consists of α-Zr grains elongated in both transverse and longitudinal directions and thin layers of partly decomposed β-Zr lying between the α-Zr grains. In this study, we have used state-of-the-art microscopy techniques to characterise the long-term thermally decomposed β phase in these alloys, and the oxide scale formed on them in a reactor coolant loop with the aim of understanding the mechanisms underpinning the thermal decomposition behaviour at service temperatures and exploring the role of the decomposed β-Zr phase in controlling the microstructure and microchemistry of the zirconium oxide, and hence its influence on the general corrosion resistance of the alloy. We observe that these β-Zr layers are heavily decomposed even after the short stress stage at 400°C at the end of the manufacturing cycle, with a closely packed array of β-Nb precipitates forming in an α-Zr matrix. We have shown that the oxidation of these bands is significantly slower than the surrounding α-Zr matrix and that zirconium oxide grains are re-nucleated under each band. We conclude that it is the combination of the Nb-rich remnants of the original β-Zr layers arising from the hot extrusion and drawing stages and this new dense oxide that offers a significant barrier to the oxidation front (and also to the penetration of hydrogenic species), so the characteristic layered microstructure arising from the original manufacturing process is very important in determining the overall oxidation behaviour.
采用Zr-2.5Nb合金作为加拿大氘铀(CANDU)核反应堆的压力管,典型的起始组织为α-Zr晶粒纵向和横向拉长,α-Zr晶粒之间有部分分解的薄层β-Zr。在这项研究中,我们使用了最先进的显微镜技术来表征这些合金中长期热分解的β相,以及在反应堆冷却剂回路中形成的氧化垢,目的是了解在使用温度下热分解行为的机制,并探索分解的β- zr相在控制氧化锆的微观结构和微化学中的作用。从而影响合金的总体耐腐蚀性。我们观察到,这些β-Zr层在制造周期结束时,即使在400℃的短应力阶段,也会被严重分解,在α-Zr基体中形成紧密排列的β-Nb沉淀。结果表明,这些条带的氧化速度明显慢于周围α-Zr基体的氧化速度,并且在每个条带下氧化锆晶粒都重新成核。我们得出的结论是,这是由热挤压和拉伸阶段产生的原始β-Zr层的富铌残留物和这种新的致密氧化物的结合,为氧化前沿(以及含氢物质的渗透)提供了一个重要的屏障,因此,由原始制造过程产生的特征层状微观结构对于确定整体氧化行为非常重要。
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引用次数: 0
Nanoporous Carbon From Mulberry Leaves Residues via Microwave Assisted Hydrothermal-Carbonization for Methyl Orange Adsorption: Kinetic, Equilibrium and Thermodynamic Studies 微波辅助水热碳化桑叶残基纳米孔碳吸附甲基橙:动力学、平衡和热力学研究
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3906849
Siwat Siraoranroj, N. Kaewtrakulchai, M. Fuji, A. Eiad-ua
High performance nanoporous carbons (MLC) were directly prepared from mulberry leaves (Morus alba L.) residues by the hydrothermal-carbonization with chemical reagent combined the microwave-assisted treatment. The as-purified MLC was successfully applied for the adsorption of methyl orange, which is one of crucial waste-water pollutants left from an industrial sector. The MLC sample obtained from the hydrothermal process (200 °C, 12 h) using an activation of 15 wt% NaOH (700 °C, 2 h), and combined with microwave treatment at 700 W for 6 min, specifically exhibited micropores and mesopores in the MLC morphological structure. Accordingly, the highest SBET was approximately 791.79 m2/g with the total pore volume of 0.495 cm3/g. Moreover, the adsorption performance test of MLC was conducted by the shaking unit using 100 ppm methyl orange concentration. The MLC showed the highest methyl orange-adsorption uptake of 99% at 30 °C under an ambient pressure (1 atm). The development of mulberry leaves (Morus alba L.) residues into MLC exhibited a great attention for dyes adsorption with a rapid adsorption kinetic, and excellent adsorption capacity, which are a promising-characteristics for practical waste-water adsorption experiments.
以桑叶残渣为原料,采用化学试剂水热碳化结合微波辅助处理的方法,直接制备了高性能纳米孔碳。纯化后的MLC成功地用于吸附工业废水中重要污染物之一甲基橙。用15 wt% NaOH(700℃,2 h)活化水热法(200℃,12 h)得到的MLC样品,并结合700 W微波处理6 min,在MLC形态结构中表现出微孔和介孔。因此,最高SBET约为791.79 m2/g,总孔隙体积为0.495 cm3/g。此外,在100 ppm甲基橙浓度下,通过摇床对MLC的吸附性能进行了测试。在30℃环境压力(1atm)下,MLC对甲基橙的吸收率最高,达到99%。桑叶残渣制备MLC具有快速的吸附动力学和优异的吸附性能,对染料的吸附备受关注,为实际废水吸附实验提供了良好的前景。
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引用次数: 0
Study of Microbands in a Fe-30mn-6.5al-0.3c Low-Density Steel Deformed at Cryogenic Temperature Fe-30mn-6.5al-0.3c低温变形低密度钢的微带研究
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3947689
I. Gutierrez-Urrutia, A. Shibata, K. Tsuzaki
The microband (MB) formation mechanisms in an austenitic Fe-30Mn-6.5Al-0.3C (wt.%) low-density steel tensile deformed at -196°C were investigated by combined electron channeling contrast imaging (ECCI) and electron backscatter diffraction (EBSD). The grain orientation dependences of the MB structure, MB morphology, and MB alignment were quantitatively evaluated in grains oriented with the two main texture components, namely, <111>//tensile axis (TA) and <001>//TA. The interplay between the deformation structure and MB formation was analyzed. Our analysis indicates that the underlying deformation structure controls the MB formation mechanism and, at the current deformation conditions, also determines the crystallographic character of MBs. Most of the evaluated MBs have a crystallographic character (deviation angle <5° from {111} slip plane traces). Specifically, 77% of the MBs in the grains oriented close to <111>//TA directions and all the MBs evaluated in grains oriented close to <001>//TA directions have a crystallographic character. They are associated with a planar strain localization phenomenon occurring along highly-stressed crystallographic slip planes. Non-crystallographic MBs (deviation angle >5° from {111} slip plane traces) only occur in the grains oriented close to <111>//TA directions. They are associated with the splitting of pre-existing dense-dislocation walls (DDWs). At high strain levels, we foresee the activation of a GB-assisted MB formation mechanism associated with twin-GB interactions.
采用电子通道对比成像(ECCI)和电子背散射衍射(EBSD)相结合的方法研究了-196°C拉伸变形奥氏体Fe-30Mn-6.5Al-0.3C (wt.%)低密度钢中微带(MB)的形成机制。在以//拉伸轴(TA)和//TA两种主要织构成分取向的晶粒中,定量评价了MB结构、MB形态和MB排列对晶粒取向的依赖性。分析了变形构造与MB形成的相互作用。我们的分析表明,底层变形结构控制了MB的形成机制,并且在当前变形条件下,也决定了MB的晶体学特征。大多数评价的MBs具有晶体学特征(偏离角//TA方向),所有取向接近//TA方向的MBs都具有晶体学特征。它们与沿高应力晶体滑移面发生的平面应变局部化现象有关。非结晶性MBs(与{111}滑移面轨迹偏离角度>5°)仅发生在靠近//TA方向的晶粒中。它们与先前存在的密集位错壁(ddw)的分裂有关。在高应变水平下,我们预见到与双gb相互作用相关的gb辅助MB形成机制的激活。
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引用次数: 0
Effect of Aging State on Fatigue Property of Wrought Aluminum Alloys 时效状态对变形铝合金疲劳性能的影响
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3919744
B. Gong, Z.J. Zhang, Z. Qu, J. Hou, H.J. Yang, X. Shao, Z. Zhang
The high-cycle fatigue (HCF) behaviors of wrought Al alloys are vitally important for their industrial application. To optimize the fatigue property of the wrought Al alloy, the effects of aging conditions on the fatigue properties of 7N01, 7075 and 2024 Al alloys were studied. The results show that the overaged samples have the lowest tensile strength among the three aging states, but their fatigue strength is the highest. Further investigations on the dislocation morphologies indicates that the dislocations are easy to accumulate and annihilate at the second phase boundaries for the overaged state, which reduces the fatigue damage degree at the grain boundaries. Besides, the discontinuous distribution of the grain boundary precipitates and the increased width of the precipitate-free zone also contributed to the improved fatigue property of the overaged state. Those results should be significantly important for the optimization of their fatigue properties and the industrial application of wrought Al alloys.
变形铝合金的高周疲劳性能对其工业应用具有重要意义。为优化变形铝合金的疲劳性能,研究了不同时效条件对7N01、7075和2024铝合金疲劳性能的影响。结果表明:三种时效状态下,过时效试样的抗拉强度最低,而疲劳强度最高;对位错形貌的进一步研究表明,在过时效状态下,位错易于在第二相晶界处积累和湮灭,从而降低了晶界处的疲劳损伤程度。此外,晶界析出相的不连续分布和无析出带宽度的增大也有助于提高过时效态的疲劳性能。这些结果对变形铝合金的疲劳性能优化和工业应用具有重要意义。
{"title":"Effect of Aging State on Fatigue Property of Wrought Aluminum Alloys","authors":"B. Gong, Z.J. Zhang, Z. Qu, J. Hou, H.J. Yang, X. Shao, Z. Zhang","doi":"10.2139/ssrn.3919744","DOIUrl":"https://doi.org/10.2139/ssrn.3919744","url":null,"abstract":"The high-cycle fatigue (HCF) behaviors of wrought Al alloys are vitally important for their industrial application. To optimize the fatigue property of the wrought Al alloy, the effects of aging conditions on the fatigue properties of 7N01, 7075 and 2024 Al alloys were studied. The results show that the overaged samples have the lowest tensile strength among the three aging states, but their fatigue strength is the highest. Further investigations on the dislocation morphologies indicates that the dislocations are easy to accumulate and annihilate at the second phase boundaries for the overaged state, which reduces the fatigue damage degree at the grain boundaries. Besides, the discontinuous distribution of the grain boundary precipitates and the increased width of the precipitate-free zone also contributed to the improved fatigue property of the overaged state. Those results should be significantly important for the optimization of their fatigue properties and the industrial application of wrought Al alloys.","PeriodicalId":7755,"journal":{"name":"AMI: Acta Materialia","volume":"46 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79918412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Low-Fatigue and Large Room-Temperature Elastocaloric Effect in a Bulk Ti 49.2Ni 40.8Cu 10 Alloy Ti 49.2Ni 40.8Cu 10块状合金的低疲劳大室温弹性热效应
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3927821
Pengfei Dang, Yumei Zhou, Lei Ding, J. Pang, Lei Zhang, X. Ding, Jun Sun, T. Lookman, D. Xue
Large-scale applications of elastocaloric cooling demand bulk materials showing both large adiabatic temperature change (∆Tad) and low-fatigue characteristics at room temperature. Here we synthesize a bulk Ti49.2Ni40.8Cu10 polycrystalline alloy microstructurally featured by nanocrystalinity and epitaxially related Ti(Ni,Cu) 2 nanoprecipitates through cold-rolling and aging treatment. It exhibits a large ∆Tad of 13.8 K and a high coefficient of performance value of 13 at room temperature. Moreover, the degradation of ∆Tad is only 0.3 K after 450 tensile cycles. The results indicate that the alloy offers a good balance of multiple objectives, holding promise for solid-state refrigeration applications. We attribute the favorable properties to the enhanced reversibility of martensitic transformation during stress cycling, aided by the internal epitaxy-generated stress at the interface between the Ti(Ni,Cu)2 nanoprecipitates and matrix, together with grain refinement.
弹性热冷却的大规模应用要求块状材料在室温下具有大的绝热温度变化(∆Tad)和低疲劳特性。本文通过冷轧和时效处理,合成了具有纳米晶性和外延相关Ti(Ni,Cu) 2纳米沉淀的块状Ti49.2Ni40.8Cu10多晶合金。在室温下表现出较大的∆Tad (13.8 K)和较高的性能系数(13)。450次拉伸循环后,∆Tad的降解仅为0.3 K。结果表明,该合金提供了多个目标的良好平衡,有望在固态制冷应用。我们将这种良好的性能归因于应力循环过程中马氏体相变的可逆性增强,这得益于Ti(Ni,Cu)2纳米沉淀物与基体之间的内部外延产生的应力,以及晶粒细化。
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引用次数: 2
Solubility Limit and Annealing Effects on the Microstructure & Thermoelectricproperties of Fe 2V 1-XTa xAl 1-YSi y Heusler Compounds fe2v 1-XTa xAl 1-YSi y Heusler化合物的溶解度极限和退火对其微观结构和热电性能的影响
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3762208
F. Garmroudi, M. Parzer, A. Riss, N. Reumann, B. Hinterleitner, K. Tobita, Y. Katsura, K. Kimura, T. Mori, E. Bauer
Full-Heusler compounds with the composition Fe2V1-XTaxAl1-YSiy have recently shown to exhibit some of thehighest power factors reported so far for bulk materials due to the band convergence and band gap opening causedby the V/Ta substitution. Therefore, the solubility limit of Ta and Si regarding the stability of the L21 phase isinvestigated in this study. The crystal structure and microstructure of a large number of samples is probed by X-raydiffraction as well as scanning electron microscopy and energy dispersive X-ray analysis. The results show that the Al/Si substitution significantly hampers the solubility of Ta within the Heusler structure. Furthermore, Fe2V0.9Ta0.1Al and Fe2V0.95Ta0.05Al0.9Si0.1 reveal nanoscale impurity precipitates in the microstructure, together with diffuse contrasts that indicate a non-equilibrium metastable state. For that reason, different annealing conditions, varying the temperature and time, have been applied to the latter and the effect on the microstructure and thermoelectric properties is investigated. It is found that additional annealing leads to further phase segregation and grain growth of the impurity precipitates, which due to their metallic-like nature have a detrimental effect on the Seebeck coefficient. They can however effectively reduce the lattice thermal conductivity if the average grain size remains below the phonon mean free path. The thermoelectric efficiency in terms of the dimensionless gure of merit ZT is increased up to ZT = 0.3 - 0.34 at 300K which is beyond the values previously reported for Fe2VAl-based bulk materials.
具有Fe2V1-XTaxAl1-YSiy组成的Full-Heusler化合物,由于V/Ta取代引起的能带收敛和带隙打开,显示出迄今为止报道的块状材料中最高的功率因数。因此,本研究考察了Ta和Si对L21相稳定性的溶解度限制。利用x射线衍射、扫描电镜和能量色散x射线分析对大量样品的晶体结构和微观结构进行了探测。结果表明,Al/Si取代明显阻碍了Ta在Heusler结构中的溶解度。此外,Fe2V0.9Ta0.1Al和Fe2V0.95Ta0.05Al0.9Si0.1在微观结构中显示出纳米级杂质沉淀,同时弥散对比表明非平衡亚稳态。为此,采用不同的退火条件,改变温度和时间,对后者进行了研究,并研究了其对微观结构和热电性能的影响。发现进一步退火导致杂质析出相进一步偏析和晶粒长大,由于其类金属性质,这对塞贝克系数有不利影响。然而,如果平均晶粒尺寸保持在声子平均自由程以下,它们可以有效地降低晶格热导率。在300K时,无因次质量系数ZT的热电效率增加到ZT = 0.3 - 0.34,这超出了以前报道的基于fe2valal的块状材料的值。
{"title":"Solubility Limit and Annealing Effects on the Microstructure & Thermoelectricproperties of Fe 2V 1-XTa xAl 1-YSi y Heusler Compounds","authors":"F. Garmroudi, M. Parzer, A. Riss, N. Reumann, B. Hinterleitner, K. Tobita, Y. Katsura, K. Kimura, T. Mori, E. Bauer","doi":"10.2139/ssrn.3762208","DOIUrl":"https://doi.org/10.2139/ssrn.3762208","url":null,"abstract":"Full-Heusler compounds with the composition Fe<sub>2</sub>V<sub>1-X</sub>Ta<sub>x</sub>Al<sub>1-Y</sub>Si<sub>y</sub> have recently shown to exhibit some of thehighest power factors reported so far for bulk materials due to the band convergence and band gap opening causedby the V/Ta substitution. Therefore, the solubility limit of Ta and Si regarding the stability of the L2<sub>1</sub> phase isinvestigated in this study. The crystal structure and microstructure of a large number of samples is probed by X-raydiffraction as well as scanning electron microscopy and energy dispersive X-ray analysis. The results show that the Al/Si substitution significantly hampers the solubility of Ta within the Heusler structure. Furthermore, Fe<sub>2</sub>V<sub>0.9</sub>Ta<sub>0.1</sub>Al and Fe<sub>2</sub>V<sub>0.95</sub>Ta<sub>0.05</sub>Al<sub>0.9</sub>Si<sub>0.1</sub> reveal nanoscale impurity precipitates in the microstructure, together with diffuse contrasts that indicate a non-equilibrium metastable state. For that reason, different annealing conditions, varying the temperature and time, have been applied to the latter and the effect on the microstructure and thermoelectric properties is investigated. It is found that additional annealing leads to further phase segregation and grain growth of the impurity precipitates, which due to their metallic-like nature have a detrimental effect on the Seebeck coefficient. They can however effectively reduce the lattice thermal conductivity if the average grain size remains below the phonon mean free path. The thermoelectric efficiency in terms of the dimensionless gure of merit <i>ZT</i> is increased up to <i>ZT</i> = 0.3 - 0.34 at 300K which is beyond the values previously reported for Fe2VAl-based bulk materials.","PeriodicalId":7755,"journal":{"name":"AMI: Acta Materialia","volume":"103 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90309739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-Quality A1GaN Epitaxy on Lattice-Engineerable AlN Template for High-Power UVC Light-Emitting Diodes 在高功率UVC发光二极管的栅格工程AlN模板上的高质量A1GaN外延
Pub Date : 2021-01-01 DOI: 10.2139/ssrn.3946395
S. Walde, Cheng-Yao Huang, Chia-Lung Tsai, Wen-Hsuang Hsieh, Yi-Keng Fu, S. Hagedorn, Cheng-Yao Huang, T. Lu, M. Weyers, Chia-Yen Huang
AlGaN-based UVC light-emitting diodes (LED) were fabricated on high-quality AlN templates with an engineerable in-plane lattice constant. The controllability of the in-plane strain originated from the vacancy formation in Si-doped AlN (AlN:Si) and their interaction with edge dislocations. The strain state of the AlN:Si top interface could be well depicted by a dislocation-tilt model depending on the buffer strain state, threading dislocation density (TDD), and regrown AlN:Si thickness. The validity of the model was verified by cross-sectional TEM analysis. With a gradually widened lattice constant of regrown AlN:Si layer, strain-induced defects of subsequently grown n-AlGaN was suppressed. Therefore, growing a current spreading layer which possesses a moderate Al content (<65%), decent thickness (>1.5 μm), and a low TDD (<1.0×10 9 cm -2 ) simultaneously becomes possible. Additionally, the idea of an optimal edge TDD ) in the AlN buffer was revealed for growing high-quality n-AlGaN layers with a targeted thickness. After a deliberate strain-TDD engineering for AlN:Si and n-AlGaN, high-power UVC LEDs (P>200 mW) with a low forward voltage (V f =5.7 volt) were demonstrated at I=1.35 A. The low forward voltage under high current injection density was attributed to the success in preparation of a low series resistance and high-quality n-AlGaN current spreading layer.
在高质量的AlN模板上制备了基于algan的UVC发光二极管(LED),具有可工程的平面内晶格常数。面内应变的可控性源于Si掺杂AlN (AlN:Si)中空位的形成及其与边缘位错的相互作用。根据缓冲应变状态、螺纹位错密度(TDD)和再生AlN:Si厚度,位错-倾斜模型可以很好地描述AlN:Si顶部界面的应变状态。通过横断面透射电镜分析验证了模型的有效性。随着再生AlN:Si层晶格常数逐渐变宽,随后生长的n-AlGaN的应变诱导缺陷被抑制。因此,在I=1.35 a时生长出了Al含量适中(1.5 μm)、TDD低(200 mW)、正向电压低(V f =5.7伏)的电流展布层。高电流注入密度下的低正向电压归因于成功制备了低串联电阻和高质量的n-AlGaN电流扩散层。
{"title":"High-Quality A1GaN Epitaxy on Lattice-Engineerable AlN Template for High-Power UVC Light-Emitting Diodes","authors":"S. Walde, Cheng-Yao Huang, Chia-Lung Tsai, Wen-Hsuang Hsieh, Yi-Keng Fu, S. Hagedorn, Cheng-Yao Huang, T. Lu, M. Weyers, Chia-Yen Huang","doi":"10.2139/ssrn.3946395","DOIUrl":"https://doi.org/10.2139/ssrn.3946395","url":null,"abstract":"AlGaN-based UVC light-emitting diodes (LED) were fabricated on high-quality AlN templates with an engineerable in-plane lattice constant. The controllability of the in-plane strain originated from the vacancy formation in Si-doped AlN (AlN:Si) and their interaction with edge dislocations. The strain state of the AlN:Si top interface could be well depicted by a dislocation-tilt model depending on the buffer strain state, threading dislocation density (TDD), and regrown AlN:Si thickness. The validity of the model was verified by cross-sectional TEM analysis. With a gradually widened lattice constant of regrown AlN:Si layer, strain-induced defects of subsequently grown n-AlGaN was suppressed. Therefore, growing a current spreading layer which possesses a moderate Al content (<65%), decent thickness (>1.5 μm), and a low TDD (<1.0×10 9 cm -2 ) simultaneously becomes possible. Additionally, the idea of an optimal edge TDD ) in the AlN buffer was revealed for growing high-quality n-AlGaN layers with a targeted thickness. After a deliberate strain-TDD engineering for AlN:Si and n-AlGaN, high-power UVC LEDs (P>200 mW) with a low forward voltage (V f =5.7 volt) were demonstrated at I=1.35 A. The low forward voltage under high current injection density was attributed to the success in preparation of a low series resistance and high-quality n-AlGaN current spreading layer.","PeriodicalId":7755,"journal":{"name":"AMI: Acta Materialia","volume":"25 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2021-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88398814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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AMI: Acta Materialia
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