Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)最新文献
The Green function for phonons scattered by an inhomogeneous distribution of resonant centres is evaluated. A diagrammatic expansion in two parameters is used: the coupling strength and α, the ratio of the resonant phonon wavelengths to the characteristic wavelength for the distribution of scatterers. For small values of α, a spatially dependent local dispersion and damping of the phonons is obtained. The effect on the linewidth for inelastic neutron scattering is discussed. Die Greensche Funktion fur Phononen, die an einer inhomogenen Verteilung resonanter Zentren gestreut werden, wird berechnet. Es wird eine Diagramm-Entwicklung nach zwei Parametern verwendet: die Starke der Kopplung und das Verhaltnis der resonanten Phononwellenlange zur charakteristischen Wellenlange der Verteilung der Streuzentren (α). Fur kleine Werte von α wird eine ortsabhangige lokale Dispersion sowie eine Dampfung der Phononen erhalten. Die Aus-wirkung auf die Linienbreite bei inelastischer Neutronenstreuung wird diskutiert.
以基因对比扫瞄器为扫瞄器的绿色讯号接受评价A diagrammatic扩张在二人组参数是以前常说:the coupling strength andα,the ratio of the resonant phonon wavelengths to the characteristic of scatterers套件wavelength for the .For小values ofαa spatially dependent本地散布和《damping phonons is obtained .线性渴求内线的原因是解码。利用基因一致分布中心传播的手机的绿色函数被计算出来。这后一Diagramm-Entwicklung 2使用参数:强大的27.5%和resonanten形势Phononwellenlange为特色的Wellenlange Streuzentren分布(α).小的值α会认为这是ortsabhangige地方散布及收到的Phononen Dampfung .由此引起了
{"title":"Phonon Scattering by Inhomogeneously Distributed Paramagnetic Ions","authors":"G. Toombs, F. Sheard","doi":"10.1002/PSSB.2221300213","DOIUrl":"https://doi.org/10.1002/PSSB.2221300213","url":null,"abstract":"The Green function for phonons scattered by an inhomogeneous distribution of resonant centres is evaluated. A diagrammatic expansion in two parameters is used: the coupling strength and α, the ratio of the resonant phonon wavelengths to the characteristic wavelength for the distribution of scatterers. For small values of α, a spatially dependent local dispersion and damping of the phonons is obtained. The effect on the linewidth for inelastic neutron scattering is discussed. \u0000 \u0000 \u0000 \u0000Die Greensche Funktion fur Phononen, die an einer inhomogenen Verteilung resonanter Zentren gestreut werden, wird berechnet. Es wird eine Diagramm-Entwicklung nach zwei Parametern verwendet: die Starke der Kopplung und das Verhaltnis der resonanten Phononwellenlange zur charakteristischen Wellenlange der Verteilung der Streuzentren (α). Fur kleine Werte von α wird eine ortsabhangige lokale Dispersion sowie eine Dampfung der Phononen erhalten. Die Aus-wirkung auf die Linienbreite bei inelastischer Neutronenstreuung wird diskutiert.","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86675066","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Effect of Thermal Charge Density Fluctuations on the Specific Heat of Normal Metals","authors":"E. Pamyatnykh, A. Poltavets","doi":"10.1002/PSSB.2221300251","DOIUrl":"https://doi.org/10.1002/PSSB.2221300251","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"82 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78209956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Universal Approximation Formulas for the Gap Shift in Doped Semiconductors","authors":"F. Thuselt, M. Rösler","doi":"10.1002/PSSB.2221300260","DOIUrl":"https://doi.org/10.1002/PSSB.2221300260","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"133 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76717008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The Compton Profile of Polycrystalline TiH1.98","authors":"G. Boulakis","doi":"10.1002/PSSB.2221300257","DOIUrl":"https://doi.org/10.1002/PSSB.2221300257","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"63 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74712708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A method is proposed to determine the number of nearest coordination spheres in which the presence of limiting short-range order is sufficient to produce long-range order. The use of the method is considered with reference to the example of atomic ordering in solid solutions with b.c.c. and f.c.c. structures. It is suggested that a qualitative dependence exists between the kind of order—disorder phase transition and the relation of short-range and long-range order in the solid solutions involved. [Russian Text Ignored]
{"title":"Relation between Short-Range and Long-Range Order in Solid Solutions with Basal B.C.C. and F.C.C. Structures","authors":"A. Rempel, A. I. Gusev","doi":"10.1002/PSSB.2221300202","DOIUrl":"https://doi.org/10.1002/PSSB.2221300202","url":null,"abstract":"A method is proposed to determine the number of nearest coordination spheres in which the presence of limiting short-range order is sufficient to produce long-range order. The use of the method is considered with reference to the example of atomic ordering in solid solutions with b.c.c. and f.c.c. structures. It is suggested that a qualitative dependence exists between the kind of order—disorder phase transition and the relation of short-range and long-range order in the solid solutions involved. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored]","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83539922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Superconducting Transition Temperature and the Formation of Closed Electron Shells in the Atoms of Superconducting Compounds","authors":"I. Chapnik","doi":"10.1002/PSSB.2221300268","DOIUrl":"https://doi.org/10.1002/PSSB.2221300268","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81651247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. D. Tovstyuk, V. G. Deybuk, S. V. Melnichuk, N. Tovstyuk
{"title":"3d-Impurity Levels in CdTe and ZnSe","authors":"K. D. Tovstyuk, V. G. Deybuk, S. V. Melnichuk, N. Tovstyuk","doi":"10.1002/PSSB.2221300263","DOIUrl":"https://doi.org/10.1002/PSSB.2221300263","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"16 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74639977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
W. Wesch, E. Wendler, G. Götz, K. Unger, H. Röppischer, C. Resagk
Annealing of ion implanted GaAs layers as well as irradiation of unimplanted samples with nanosecond laser pulses is connected with the formation of exponential absorption tails near the fundamental absorption edge with the dependence K ˜ exp [ħω(E)−1] on the photon energy. Identical behaviour is found in weakly damaged ion implanted layers. The observed high near edge absorption is connected with almost no refractive index change. The characteristic energy E is independent on the implanted ion species and increases with the nuclear deposited energy density and the laser energy density from about ≈ 0.1 eV up to a maximum value of 0.52 eV. The defects responsible for this behaviour act as compensating centers for free carriers. The experimental findings and the missing pronounced absorption tail in irradiated silicon supports the conclusion that defects typical for compound semiconductors are produced. Assuming high concentrations of vacancies and anti-site defects the experimentally found values for E can be explained from theoretical calculations. Die Ausheilung von ionenimplantierten GaAs-Schichten und die Bestrahlung nicht implantierten Materials mit Nanosekunden-Laserimpulsen fuhrt zur Ausbildung exponentieller Auslaufer des Absorptionskoeffizienten nahe der Bandkante der Form K ˜ exp [ħω(E)−1]. Identisches Verhalten wird auch in schwach geschadigten implantierten Schichten nachgewiesen, die erhohte Absorption ist mit keiner merklichen BrechzahlvergrosBerung verbunden. Die charakteristische Energie E ist unabhangig von der Art der implantierten Ionen und wachst mit der nuklear deponierten Energiedichte und der Laserenergiedichte von 0,1 eV bis zu einem Sattigungswert von 0,52 eV. Die fur dieses Verhalten verantwortlichen Defekte fuhren zur Kompensation der n-Leitung. Aus den experimentellen Befunden und unter Berucksichtigung der Tatsache, das in Si derart ausgepragte Auslaufer des Absorptionskoeffizienten nahe der Bandkante nicht beobachtet werden, wird auf die Bildung von fur Verbindungshalbleiter typischen Eigendefekten geschlossen. Unter der Annahme hoher Vakanzen- und anti site-Defektkonzentrationen konnen die experimentell gefundenen Werte fur E theoretisch erklart werden.
离子注入GaAs层的退火和未注入样品的纳秒激光脉冲照射与基本吸收边缘附近指数吸收尾的形成有关，其依赖于光子能量K ~ exp [ħω(E)−1]。在弱损伤离子注入层中发现了相同的行为。观察到的高近边吸收与折射率几乎没有变化有关。特征能量E与注入离子种类无关，随核沉积能量密度和激光能量密度的增加而增加，从约≈0.1 eV增加到最大值0.52 eV。导致这种行为的缺陷充当了自由载体的补偿中心。实验结果和辐照硅中缺失的明显吸收尾支持了化合物半导体典型缺陷产生的结论。假设有高浓度的空位和反位缺陷，实验得到的E值可以用理论计算来解释。[0][0][0][0][0][0][0][0][0][0][0][0][0][0][1]。在schwach geschadigten implantierten Schichten nachgewiesen中鉴定了Verhalten wind, die erhohte Absorption ist mitkeiner merklichen BrechzahlvergrosBerung verbunden。能量特性:能量与能量的关系:能量与能量的关系:能量与能量的关系:能量与能量的关系:能量与能量的关系:能量与能量的关系:能量与能量的关系:能量与能量的关系:能量与能量的关系Die fur dieses Verhalten verantwortlichen defkte fuhren zur compensation der n-Leitung。在德国，我们的研究对象是德国人，我们的研究对象是德国人，我们的研究对象是德国人，我们的研究对象是德国人，我们的研究对象是德国人。在Annahme的领导下，他提出了一种新的研究方法，即通过实验证明了理论研究的可行性。
{"title":"Laser Induced Defects in GaAs Layers","authors":"W. Wesch, E. Wendler, G. Götz, K. Unger, H. Röppischer, C. Resagk","doi":"10.1002/PSSB.2221300217","DOIUrl":"https://doi.org/10.1002/PSSB.2221300217","url":null,"abstract":"Annealing of ion implanted GaAs layers as well as irradiation of unimplanted samples with nanosecond laser pulses is connected with the formation of exponential absorption tails near the fundamental absorption edge with the dependence K ˜ exp [ħω(E)−1] on the photon energy. Identical behaviour is found in weakly damaged ion implanted layers. The observed high near edge absorption is connected with almost no refractive index change. The characteristic energy E is independent on the implanted ion species and increases with the nuclear deposited energy density and the laser energy density from about ≈ 0.1 eV up to a maximum value of 0.52 eV. The defects responsible for this behaviour act as compensating centers for free carriers. The experimental findings and the missing pronounced absorption tail in irradiated silicon supports the conclusion that defects typical for compound semiconductors are produced. Assuming high concentrations of vacancies and anti-site defects the experimentally found values for E can be explained from theoretical calculations. \u0000 \u0000 \u0000 \u0000Die Ausheilung von ionenimplantierten GaAs-Schichten und die Bestrahlung nicht implantierten Materials mit Nanosekunden-Laserimpulsen fuhrt zur Ausbildung exponentieller Auslaufer des Absorptionskoeffizienten nahe der Bandkante der Form K ˜ exp [ħω(E)−1]. Identisches Verhalten wird auch in schwach geschadigten implantierten Schichten nachgewiesen, die erhohte Absorption ist mit keiner merklichen BrechzahlvergrosBerung verbunden. Die charakteristische Energie E ist unabhangig von der Art der implantierten Ionen und wachst mit der nuklear deponierten Energiedichte und der Laserenergiedichte von 0,1 eV bis zu einem Sattigungswert von 0,52 eV. Die fur dieses Verhalten verantwortlichen Defekte fuhren zur Kompensation der n-Leitung. Aus den experimentellen Befunden und unter Berucksichtigung der Tatsache, das in Si derart ausgepragte Auslaufer des Absorptionskoeffizienten nahe der Bandkante nicht beobachtet werden, wird auf die Bildung von fur Verbindungshalbleiter typischen Eigendefekten geschlossen. Unter der Annahme hoher Vakanzen- und anti site-Defektkonzentrationen konnen die experimentell gefundenen Werte fur E theoretisch erklart werden.","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"6 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78947556","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Varotsos, M. Lazaridou, K. Alexopoulos, P. Varotsos
{"title":"Point Defect Entropies and Enthalpies in KCl","authors":"C. Varotsos, M. Lazaridou, K. Alexopoulos, P. Varotsos","doi":"10.1002/PSSB.2221300252","DOIUrl":"https://doi.org/10.1002/PSSB.2221300252","url":null,"abstract":"","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86121575","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The electrical resistivity and the thermoelectric power during spinodal decomposition in binary alloys are calculated, especially submicroscopic fluctuations are taken into account. The thermoelectric power shows a monotonous dependence on time whereas a maximum behaviour is obtained for the electrical resistivity. Both results agree with experimental observations. Der elektrische Widerstand und die Thermokraft bei der spinodalen Entmischung in binaren Legierungen werden berechnet, wobei insbesondere submikroskopische Fluktuationen berucksichtigt werden. Die Thermokraft zeigt eine monotone Abhangigkeit von der Zeit, wahrend fur den elektrischen Widerstand ein Maximum auftritt. Beide Ergebnisse stimmen mit den experimentellen Beobachtungen uberein.
{"title":"Electrical Resistivity and Thermoelectric Power of Spinodal Decomposing Crystals","authors":"G. Schubert, W. Löser","doi":"10.1002/PSSB.2221300242","DOIUrl":"https://doi.org/10.1002/PSSB.2221300242","url":null,"abstract":"The electrical resistivity and the thermoelectric power during spinodal decomposition in binary alloys are calculated, especially submicroscopic fluctuations are taken into account. The thermoelectric power shows a monotonous dependence on time whereas a maximum behaviour is obtained for the electrical resistivity. Both results agree with experimental observations. \u0000 \u0000 \u0000 \u0000Der elektrische Widerstand und die Thermokraft bei der spinodalen Entmischung in binaren Legierungen werden berechnet, wobei insbesondere submikroskopische Fluktuationen berucksichtigt werden. Die Thermokraft zeigt eine monotone Abhangigkeit von der Zeit, wahrend fur den elektrischen Widerstand ein Maximum auftritt. Beide Ergebnisse stimmen mit den experimentellen Beobachtungen uberein.","PeriodicalId":92347,"journal":{"name":"Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)","volume":"82 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1985-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88170014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Data Mining and Big Data : second International Conference, DMBD 2017, Fukuoka, Japan, July 27-August 1, 2017. Proceedings. DMBD (Conference) (2nd : 2017 : Fukuoka, Japan)
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