Perovskite field-effect transistors (FETs) find their commercial use in logic circuits manufactured through solution printing. However, the preparation of high-performance FETs that satisfy commercial standards is significantly challenged by the issue of ion migration. In the cover image (DOI: 10.1002/elt2.28), there is a logic circuit background, a perovskite FET structure diagram, and an enlarged schematic diagram of suppression of ion migration.