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An electron tunneling sensor 电子隧穿传感器
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87073-8
S.B. Waltman, W.J. Kaiser

New methods have been developed to implement position sensors based on electron tunneling. The electron tunneling methods enable position to be detected with sub-Ångstrom resolution using a compact mechanical structure and simple electronic control elements. A prototype accelerometer is the first sensor based on these principles; it shows reliable operation with a 10 μg/√Hz noise-limited sensitivity and abandwidth of approximately 3 kHz. Based on these results, it is expected that tunnel sensors optimized for many applications will enable an entirely new class of sensors to be developed.

基于电子隧穿的位置传感器已经发展出新的实现方法。电子隧穿方法使用紧凑的机械结构和简单的电子控制元件,能够以低于-Ångstrom的分辨率检测位置。原型加速度计是基于这些原理的第一个传感器;其工作可靠,噪声限制灵敏度为10 μg/√Hz,频带宽度约为3 kHz。基于这些结果,预计针对许多应用进行优化的隧道传感器将能够开发出全新类型的传感器。
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引用次数: 88
Cadmium telluride β-ray detector 碲化镉β射线探测器
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87075-1
Morio Wada, Jun-Ichi Suzuki, Yuzo Ozaki

The fabrication and characteristics of a prototype CdTe (cadmium telluride) detector for a β-ray thickness gauge are described. The detector consists of a pn-junction diode, operating in photovoltaic mode with no applied voltage. It needs no cooling because its dark current is less than 7 × 10−14 A/mm2at 0.01 V and 30 °C. An output current of 5 × 10−8 A with a statistical noise of 1.5 × 10−12 A/(Hz)12 has been achieved with 85Kr radiation on an active area 16 mm in diameter. The (111) CdTe wafer used in the detector is 22 mm × 22 mm × 1.5 mm.

Single crystals with no twins and a low dislocation density (less than 1 × 106 cm−2) are used because it is found that the generation-recombination centres of carriers related to crystallographic defects (such as twins and dislocations) increase the dark current and decrease the output current.

As the temperature coefficient of the output current for an 85Kr radiation source is approximately 0.23%/°C, a thermostatistically-controlled module is used to keep the detector's operating temperature constant to within 0.1 °C, thus solving the problem of drift of output current with temperature.

介绍了一种用于β射线测厚仪的CdTe(碲化镉)探测器样机的制作和特点。探测器由一个pn结二极管组成,在没有外加电压的情况下以光伏模式工作。在0.01 V、30℃条件下,其暗电流小于7 × 10−14 A/mm2,无需制冷。在直径为16mm的有源区域上,在85Kr辐射条件下,输出电流为5 × 10−8 A,统计噪声为1.5 × 10−12 A/(Hz)12。探测器使用的(111)CdTe晶片尺寸为22 mm × 22 mm × 1.5 mm,采用无孪晶和低位错密度(小于1 × 106 cm−2)的单晶,因为发现与晶体缺陷(如孪晶和位错)有关的载流子的生成-重组中心会增加暗电流并降低输出电流。由于85Kr辐射源输出电流的温度系数约为0.23%/°C,因此采用热统计控制模块使探测器的工作温度恒定在0.1°C以内,从而解决了输出电流随温度漂移的问题。
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引用次数: 9
Microrobots and micromechanical systems 微型机器人和微型机械系统
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87079-9
W.S.N. Trimmer

The domain of micromechanical systems is an extensive, useful and yet largely unexplored area. It is likely that, in many applications, small mechanisms will prove to be faster, more accurate, gentler and less expensive than the macro systems presently used. This paper explores the advantages of micromechanical systems and analyzes the scaling of forces in the micro domain.

微机械系统的领域是一个广泛的,有用的,但很大程度上尚未开发的领域。很可能,在许多应用中,小型机制将证明比目前使用的宏观系统更快、更准确、更温和和更便宜。本文探讨了微机械系统的优势,分析了微领域的力标度。
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引用次数: 423
Magnetic field sensing with magnetostrictive materials using a tunneling tip detector 使用隧道探针的磁致伸缩材料进行磁场传感
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87074-X
Joseph H. Wandass , James S. Murday, Richard J. Colton

This paper is a feasibility study for the design and construction of a magnetic field sensor using a tunneling tip as the detection system. In this experiment, a scanning tunneling microscope is used to measure dimensional changes of a short, thin amorphous FeBSi magnetostrictive ribbon exposed to d.c. and a.c. magnetic fields. A response of the system to a.c. magnetic fields was observed down to 0.020 G at a frequency of 1 Hz. The calculated sensitivity of the system can be near 10−6 G if the vibrational stability of the device can be improved and if the demagnetizing field associated with short ribbons can be reduced. A mode of sensor operation involving the modulation of the tip-to-specimen separation is reported. Methods to improve the stability of the device are also discussed.

本文对以隧道尖端为探测系统的磁场传感器的设计和构造进行了可行性研究。在本实验中,使用扫描隧道显微镜测量了短而薄的非晶FeBSi磁致伸缩带在直流和交流磁场下的尺寸变化。在1 Hz的频率下,观察到系统对交流磁场的响应低至0.020 G。如果能提高器件的振动稳定性和减小短带相关的退磁场,系统的计算灵敏度可接近10−6 G。一种涉及尖端到试样分离调制的传感器操作模式被报道。讨论了提高装置稳定性的方法。
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引用次数: 31
Reflectivity changes of optically-thin nickel films exposed to oxygen 光学薄镍膜暴露于氧气下的反射率变化
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87077-5
M.A. Butler, A.J. Ricco

Optically-thin nickel films evaporated on the end of optical fibers show a reflectivity change when exposed to oxygen. This effect has been measured as a function of metal thickness and wavelength. Growth of NiO on the nickel surface reduces the thickness of the metal and thus the phase shift of the light passing through it. This phase change causes a change in the reflectivity. A simple classical model using Fresnel reflection coefficients fits all the data. The 4.2 Å reduction in nickel thickness deduced from the optical measurements agrees well with measurements made using modern surface analytical techniques. This new optical method for monitoring chemical interactions between adsorbates and metals may prove useful for gas sensing and corrosion monitoring. In addition, it may provide information on how chemisorption modifies the local electron density of states in metals.

当暴露于氧气中时,蒸发在光纤末端的光学薄镍薄膜显示出反射率的变化。这种效应已被测量为金属厚度和波长的函数。NiO在镍表面的生长减少了金属的厚度,从而减少了通过它的光的相移。这种相位变化引起反射率的变化。使用菲涅耳反射系数的简单经典模型可拟合所有数据。从光学测量中推断出的4.2 Å镍厚度减少与使用现代表面分析技术进行的测量结果非常吻合。这种用于监测吸附物和金属之间化学相互作用的新光学方法可能对气体传感和腐蚀监测有用。此外,它可以提供关于化学吸附如何改变金属态的局部电子密度的信息。
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引用次数: 15
A thick-film calormetric sensor for monitoring the concentration of combustible gases 用于监测可燃气体浓度的厚膜量热传感器
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87076-3
Aifan Chen, Ruixian Luo, Thiam-Chye Tan, Chung-Chiun Liu

A calorimetric sensor consisting of two identical platinum heater/ resistance thermometer films fabricated by a thick-film metallization process is used to monitor the steady-state concentration of hydrogen, carbon monoxide and hydrocarbon gases in a flow reactor. Platinum black and palladium are used as catalysts and are deposited either chemically or electrolytically on one of the platinum films, while the other serves as a compensating element. Experimental studies show that the sensors fabricated by this process have good sensing characteristics for the combustible gases examined.

采用厚膜金属化工艺制备了一种由两层相同铂加热器/电阻温度计膜组成的量热传感器,用于监测流动反应器中氢气、一氧化碳和碳氢化合物气体的稳态浓度。铂黑和钯用作催化剂,通过化学或电解方式沉积在其中一层铂膜上,而另一层作为补偿元件。实验研究表明,用该工艺制作的传感器对被测可燃气体具有良好的传感特性。
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引用次数: 13
Conference announcements 会议公告
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87081-7
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引用次数: 0
A new approach for the fabrication of micromechanical structures 微机械结构制造的新途径
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87080-5
M. Parameswaran, H.P. Baltes, Lj. Ristic, A.C. Dhaded, A.M. Robinson

Many inherent features available in the CMOS process lend themselves to the fabrication of certain micromechanical structures for sensor applications. These micromechanical structures are fabricated by implementing unconventional layout designs in CMOS technology without altering the process sequence. A single post-processing etching step is introduced to form free-standing microstructures on a CMOS IC without affecting the circuitry formed on the chip, thus allowing micromechanical sensors to be produced with pertinent on-chip circuitry for signal conditioning. Polysilicon micro-bridges, sandwiched oxide microbridges and cantilevers are produced using this technique.

CMOS工艺的许多固有特性使其能够用于传感器应用的某些微机械结构的制造。这些微机械结构是通过在CMOS技术中实现非常规的布局设计而制造的,而不改变工艺顺序。引入了一个单一的后处理蚀刻步骤,在CMOS IC上形成独立的微结构,而不影响芯片上形成的电路,从而允许微机械传感器与相关的片上电路一起生产,用于信号调理。多晶硅微桥、夹层氧化物微桥和悬臂梁都是用这种技术生产的。
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引用次数: 127
The mixed oxide A12O3V2O5 as a semiconductor gas sensor for NO and NO2 混合氧化物A12O3V2O5作为NO和NO2的半导体气体传感器
Pub Date : 1989-09-01 DOI: 10.1016/0250-6874(89)87078-7
Tatsumi Ishihara, Kazuhiko Shiokawa, Koichi Eguchi, Hiromichi Arai

Several semiconductive oxides are tested as sensors for the detection of NO, NO2, CO and CO2. The conductivity of Al2O3V2O5 is sensitive to 1–1000 ppm of NO and NO2, but is insensitive to CO or CO2. The mixed oxide (Al2O3)0.5(V2O5)0.5 is excellent not only in its selectivity for detection of NO and NO2 but also in its sensitivity. The amount of NO adsorbed is greatly enhanced, but that of CO is unaffected by mixing V2O5 with Al2O3. The high sensitivity of Al2O3V2O5 to NO and NO2 appears to result from the increased amount of adsorbed nitrogen oxide.

测试了几种半导体氧化物作为检测NO, NO2, CO和CO2的传感器。Al2O3V2O5的电导率对1 ~ 1000ppm的NO和NO2敏感,但对CO或CO2不敏感。混合氧化物(Al2O3)0.5(V2O5)0.5不仅对NO和NO2的检测选择性好,而且灵敏度高。V2O5与Al2O3混合可显著提高NO的吸附量,但对CO的吸附量没有影响。Al2O3V2O5对NO和NO2的高敏感性似乎是由于吸附的氮氧化物量增加所致。
{"title":"The mixed oxide A12O3V2O5 as a semiconductor gas sensor for NO and NO2","authors":"Tatsumi Ishihara,&nbsp;Kazuhiko Shiokawa,&nbsp;Koichi Eguchi,&nbsp;Hiromichi Arai","doi":"10.1016/0250-6874(89)87078-7","DOIUrl":"10.1016/0250-6874(89)87078-7","url":null,"abstract":"<div><p>Several semiconductive oxides are tested as sensors for the detection of NO, NO<sub>2</sub>, CO and CO<sub>2</sub>. The conductivity of Al<sub>2</sub>O<sub>3</sub>V<sub>2</sub>O<sub>5</sub> is sensitive to 1–1000 ppm of NO and NO<sub>2</sub>, but is insensitive to CO or CO<sub>2</sub>. The mixed oxide (Al<sub>2</sub>O<sub>3</sub>)<sub>0.5</sub>(V<sub>2</sub>O<sub>5</sub>)<sub>0.5</sub> is excellent not only in its selectivity for detection of NO and NO<sub>2</sub> but also in its sensitivity. The amount of NO adsorbed is greatly enhanced, but that of CO is unaffected by mixing V<sub>2</sub>O<sub>5</sub> with Al<sub>2</sub>O<sub>3</sub>. The high sensitivity of Al<sub>2</sub>O<sub>3</sub>V<sub>2</sub>O<sub>5</sub> to NO and NO<sub>2</sub> appears to result from the increased amount of adsorbed nitrogen oxide.</p></div>","PeriodicalId":101159,"journal":{"name":"Sensors and Actuators","volume":"19 3","pages":"Pages 259-265"},"PeriodicalIF":0.0,"publicationDate":"1989-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/0250-6874(89)87078-7","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81434611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 56
A coated piezoelectric crystal detector system with high stability 一种高稳定性的涂层压电晶体探测器系统
Pub Date : 1989-08-15 DOI: 10.1016/0250-6874(89)87061-1
K. Pernestål, J. Braun

A coated piezoelectric crystal (CPC) detector system with high stability designed for the detection of pollutants in ambient air is described. The system is based on the use of two crystals, which are exposed to the air to be analysed. The incoming air flow is divided into two paths; one is led directly to one of the CPCs and the other flow is connected to a molecular sieve filter that absorbs the pollutants before the flow is led to the other CPC. The flows are controlled by magnetic valves in such a way that one crystal is exposed to either clean air from the molecular sieve filter or to polluted air. The other crystal is exposed in the same way, but in counter phase.

By careful design and control of the air flows, a high stability is reached and virtually no thermal drift is present. A long-term stability of ±0.002 Hz is demonstrated. The noise sources are analysed and methods to reduce their impact are demonstrated.

介绍了一种用于环境空气中污染物检测的高稳定性涂层压电晶体(CPC)探测器系统。该系统是基于两个晶体的使用,它们暴露在空气中进行分析。入风气流分为两条路径;一股水流被直接引导到其中一个CPC,另一股水流被连接到一个分子筛过滤器上,在水流被引导到另一个CPC之前,分子筛过滤器会吸收污染物。流动由电磁阀控制,这样一个晶体要么暴露在分子筛过滤器的清洁空气中,要么暴露在被污染的空气中。另一个晶体以同样的方式暴露,但处于反相。通过精心设计和控制气流,达到了很高的稳定性,几乎没有热漂移。长期稳定性为±0.002 Hz。分析了噪声源,并阐述了降低噪声源影响的方法。
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引用次数: 1
期刊
Sensors and Actuators
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