T. Bieniek, G. Janczyk, R. Dobrowolski, K. Wojciechowska, A. Malinowska, A. Panas, M. Nieprzecki, H. Kłos
This paper covers research results on development of the cantilevers beams test structures for interconnects reliability and robustness investigation. Presented results include design, modelling, simulation, optimization and finally fabrication stage performed on 4 inch Si wafers using the ITE microfabrication facility. This paper also covers experimental results from the test structures characterization.
{"title":"Functionalization of MEMS cantilever beams for interconnect reliability investigation: development practice","authors":"T. Bieniek, G. Janczyk, R. Dobrowolski, K. Wojciechowska, A. Malinowska, A. Panas, M. Nieprzecki, H. Kłos","doi":"10.1117/12.2244299","DOIUrl":"https://doi.org/10.1117/12.2244299","url":null,"abstract":"This paper covers research results on development of the cantilevers beams test structures for interconnects reliability and robustness investigation. Presented results include design, modelling, simulation, optimization and finally fabrication stage performed on 4 inch Si wafers using the ITE microfabrication facility. This paper also covers experimental results from the test structures characterization.","PeriodicalId":101814,"journal":{"name":"Scientific Conference on Optical and Electronic Sensors","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125775839","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We examine the application of selected thin dielectric films, deposited by atomic layer deposition (ALD), in a low coherence fiber-optic Fabry-Pérot interferometer designed for sensing applications. Such films can be deposited on the end-face of a single mode optical fiber (SMF-28) in order to modify the reflectivity of the Fabry-Pérot cavity, to provide protection of the fibers from aggressive environments or to create a multi-cavity interferometric sensor. Spectral reflectance of films made from zinc oxide (ZnO), titanium dioxide (TiO2), aluminum oxide (Al2O3) and boron nitride (BN) was calculated for various thickness of the films and compared. The results show that the most promising materials for use in fiber-optic Fabry-Pérot interferometer are TiO2 and ZnO, although Al2O3 is also suitable for this application.
{"title":"Application of thin dielectric films in low coherence fiber-optic Fabry-Pérot sensing interferometers: comparative study","authors":"M. Hirsch, P. Wierzba, M. Jędrzejewska-Szczerska","doi":"10.1117/12.2245841","DOIUrl":"https://doi.org/10.1117/12.2245841","url":null,"abstract":"We examine the application of selected thin dielectric films, deposited by atomic layer deposition (ALD), in a low coherence fiber-optic Fabry-Pérot interferometer designed for sensing applications. Such films can be deposited on the end-face of a single mode optical fiber (SMF-28) in order to modify the reflectivity of the Fabry-Pérot cavity, to provide protection of the fibers from aggressive environments or to create a multi-cavity interferometric sensor. Spectral reflectance of films made from zinc oxide (ZnO), titanium dioxide (TiO2), aluminum oxide (Al2O3) and boron nitride (BN) was calculated for various thickness of the films and compared. The results show that the most promising materials for use in fiber-optic Fabry-Pérot interferometer are TiO2 and ZnO, although Al2O3 is also suitable for this application.","PeriodicalId":101814,"journal":{"name":"Scientific Conference on Optical and Electronic Sensors","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121565362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Output frequency signal from the "physical quantity-to-frequency" (X/f) converter is often transmitted and converted in the slotted line with frequency carrier of information. This paper presents a meteorological analysis of a slotted line with frequency carrier of information, which obtain signal from the X/f converter. A changeable physical quantity conversion in the X/f converter causes a signal with changeable frequency generation. It is shown that the accuracy of the slotted line is determined by the construction-depending error of the X/f converter, the quantization error, the averaging error and the approximation error. Essential components of the total conversion error are the averaging error, the approximation error and the quantization error. Values of the approximation error and the averaging error are rising when signal frequency of the X/f converter output is decreasing. The quantization error value is rising when signal frequency of the X/f converter output is rising. Estimations of these errors are given. Ways of minimizing the total error are proposed.
{"title":"Error of conversion of \"physical quantity-to-frequency\" converter output signal","authors":"P. Warda","doi":"10.1117/12.2244496","DOIUrl":"https://doi.org/10.1117/12.2244496","url":null,"abstract":"Output frequency signal from the \"physical quantity-to-frequency\" (X/f) converter is often transmitted and converted in the slotted line with frequency carrier of information. This paper presents a meteorological analysis of a slotted line with frequency carrier of information, which obtain signal from the X/f converter. A changeable physical quantity conversion in the X/f converter causes a signal with changeable frequency generation. It is shown that the accuracy of the slotted line is determined by the construction-depending error of the X/f converter, the quantization error, the averaging error and the approximation error. Essential components of the total conversion error are the averaging error, the approximation error and the quantization error. Values of the approximation error and the averaging error are rising when signal frequency of the X/f converter output is decreasing. The quantization error value is rising when signal frequency of the X/f converter output is rising. Estimations of these errors are given. Ways of minimizing the total error are proposed.","PeriodicalId":101814,"journal":{"name":"Scientific Conference on Optical and Electronic Sensors","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134148514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Prokaryn, P. Janus, J. Zajac, A. Sierakowski, K. Domanski, P. Grabiec
In this paper we describe the method for monitoring the progress of electrochemical deposition process. The procedure allows to control the deposition of metals as well as conductive polymers on metallic seed layer. The method is particularly useful to very thin layers (1-10 nm) of deposited medium which mechanical or optical methods are troublesome for. In this method deposit is grown on the target and on the test silicon micro-cantilever with a metal pad. Galvanic deposition on the cantilever causes the change of its mass and consequently the change of its resonance frequency. Changes of the frequency is measured with laser vibro-meter then the layer thicknesses can be estimated basing on the cantilever calibration curve. Applying this method for controlling of gold deposition on platinum seed layer, for improving the properties of the biochemical sensors, is described in this paper.
{"title":"Gravimetric measurements with use of a cantilever for controlling of electrochemical deposition processes","authors":"P. Prokaryn, P. Janus, J. Zajac, A. Sierakowski, K. Domanski, P. Grabiec","doi":"10.1117/12.2245041","DOIUrl":"https://doi.org/10.1117/12.2245041","url":null,"abstract":"In this paper we describe the method for monitoring the progress of electrochemical deposition process. The procedure allows to control the deposition of metals as well as conductive polymers on metallic seed layer. The method is particularly useful to very thin layers (1-10 nm) of deposited medium which mechanical or optical methods are troublesome for. In this method deposit is grown on the target and on the test silicon micro-cantilever with a metal pad. Galvanic deposition on the cantilever causes the change of its mass and consequently the change of its resonance frequency. Changes of the frequency is measured with laser vibro-meter then the layer thicknesses can be estimated basing on the cantilever calibration curve. Applying this method for controlling of gold deposition on platinum seed layer, for improving the properties of the biochemical sensors, is described in this paper.","PeriodicalId":101814,"journal":{"name":"Scientific Conference on Optical and Electronic Sensors","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121959043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Sierakowski, P. Prokaryn, R. Dobrowolski, A. Malinowska, D. Szmigiel, P. Grabiec, Damian Trojanowski, D. Jakimowicz, J. Zakrzewska‐Czerwińska
In this paper we present a new method of polymer microfluidic bioreactor fabrication by means of a gray scale lithography technique. As a result of the gray scale lithography process the 3D model of the bioreactor is defined in photoresist. The obtained model serves as a sacrificial layer for the subsequent transfer of the 3D shape into the polymer material. The proposed method allows simultaneous definition of both the overall bioreactor geometry and the multi steps cell traps in a single photolithography step. Such microfluidic structure can be used for sorting cells based on their size. The developed solution significantly simplifies the production technology and reduces its costs in comparison to standard photolithography techniques.
{"title":"Polymer microfluidic bioreactor fabrication by means of gray scale lithography technique","authors":"A. Sierakowski, P. Prokaryn, R. Dobrowolski, A. Malinowska, D. Szmigiel, P. Grabiec, Damian Trojanowski, D. Jakimowicz, J. Zakrzewska‐Czerwińska","doi":"10.1117/12.2245033","DOIUrl":"https://doi.org/10.1117/12.2245033","url":null,"abstract":"In this paper we present a new method of polymer microfluidic bioreactor fabrication by means of a gray scale lithography technique. As a result of the gray scale lithography process the 3D model of the bioreactor is defined in photoresist. The obtained model serves as a sacrificial layer for the subsequent transfer of the 3D shape into the polymer material. The proposed method allows simultaneous definition of both the overall bioreactor geometry and the multi steps cell traps in a single photolithography step. Such microfluidic structure can be used for sorting cells based on their size. The developed solution significantly simplifies the production technology and reduces its costs in comparison to standard photolithography techniques.","PeriodicalId":101814,"journal":{"name":"Scientific Conference on Optical and Electronic Sensors","volume":"10161 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130324012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The paper presents investigation of physical properties of wide bandgap oxide semiconductor – titanium dioxide for applications in integrated photonics as well as for future applications in gas sensors structures. The investigation presented in the paper was focused on: surface topography of TiO2 layer measured by AFM method, as well as investigation of Raman shift obtained by Raman spectroscopy. Finally the integrated photonics in the form of planar waveguide is also presented.
{"title":"Research of physical properties of TiO2 nanolayers for integrated photonics applications","authors":"P. Struk, T. Pustelny","doi":"10.1117/12.2244141","DOIUrl":"https://doi.org/10.1117/12.2244141","url":null,"abstract":"The paper presents investigation of physical properties of wide bandgap oxide semiconductor – titanium dioxide for applications in integrated photonics as well as for future applications in gas sensors structures. The investigation presented in the paper was focused on: surface topography of TiO2 layer measured by AFM method, as well as investigation of Raman shift obtained by Raman spectroscopy. Finally the integrated photonics in the form of planar waveguide is also presented.","PeriodicalId":101814,"journal":{"name":"Scientific Conference on Optical and Electronic Sensors","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130986942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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