Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23436
E. Takeda, D. Hisamoto, T. Toyabe
The alpha-particle source/drain penetration (ALPEN) effect is investigated using a 3-D device simulator (CADDETH) and a novel experimental method. A study of soft error due to alpha-particle injection has so far focused on such memory structures and circuits as DRAMs/SRAMs. However, a new soft error is expected to occur in single MOSFETs as the effective channel length becomes comparable to the funneling length. The authors describe: (1) the funneling penetration current between source and drain; (2) a new soft error (0 to 1) caused by the ALPEN effect; (3) experimental verification of the ALPEN effect; and (4) the impact on VLSI scaling. The ALPEN effect puts various constraints, such as the latch-up, emitter-to-collector short in bipolars, and punchthrough in parasitic MOSFETs, on VLSI design. Thus, the ALPEN effect will be a crucial factor in the scaling limits of future ULSIs with dimensions below 0.5 mu m.<>
{"title":"A new soft-error phenomenon in VLSIs: the alpha-particle-induced source/drain penetration (ALPEN) effect","authors":"E. Takeda, D. Hisamoto, T. Toyabe","doi":"10.1109/RELPHY.1988.23436","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23436","url":null,"abstract":"The alpha-particle source/drain penetration (ALPEN) effect is investigated using a 3-D device simulator (CADDETH) and a novel experimental method. A study of soft error due to alpha-particle injection has so far focused on such memory structures and circuits as DRAMs/SRAMs. However, a new soft error is expected to occur in single MOSFETs as the effective channel length becomes comparable to the funneling length. The authors describe: (1) the funneling penetration current between source and drain; (2) a new soft error (0 to 1) caused by the ALPEN effect; (3) experimental verification of the ALPEN effect; and (4) the impact on VLSI scaling. The ALPEN effect puts various constraints, such as the latch-up, emitter-to-collector short in bipolars, and punchthrough in parasitic MOSFETs, on VLSI design. Thus, the ALPEN effect will be a crucial factor in the scaling limits of future ULSIs with dimensions below 0.5 mu m.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129475184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23422
Y. Sugano, S. Minegishi, H. Sumi, M. Itabashi
An in situ observation equipment was used to investigate aluminum void formation. It was found that the voids are formed during heating and are hardly changed during cooling. The void growth can be described by an equation in which the total number of voids saturates to a certain value as a function of heating time. The passivation swelling as a causative mechanism was confirmed with an actual trace of the material's surface and by a finite-element simulation.<>
{"title":"In-situ observation and formation mechanism of aluminum voiding","authors":"Y. Sugano, S. Minegishi, H. Sumi, M. Itabashi","doi":"10.1109/RELPHY.1988.23422","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23422","url":null,"abstract":"An in situ observation equipment was used to investigate aluminum void formation. It was found that the voids are formed during heating and are hardly changed during cooling. The void growth can be described by an equation in which the total number of voids saturates to a certain value as a function of heating time. The passivation swelling as a causative mechanism was confirmed with an actual trace of the material's surface and by a finite-element simulation.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131704897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23424
Muhib M. Khan, H. Fatemi, J. Romero, Eugene A. Delenia
Cresolic epoxy novolac resins brominated by specially tailored brominating agents to impart a high C-Br bond energy have provided encapsulants with enhanced thermal stability. By isothermal bakes at temperatures from 190 to 250 degrees C, decomposition times of the experimental encapsulants were found to be three to four times longer than of a state-of-the-art commercial material. The presence of halogenated organic residues among some of the experimental materials was found to cause increased gold-aluminum wire-bond failure through degradation of the intermetallic. These residues were byproducts of resin synthesis, which were eliminated by modification of the chemistry and processing. After such modification, the halogen-induced failure time was found to be prolonged by as much as 80% compared to a commercial resin. The apparent activation energy of bond failure was 0.8 eV, which was found to equal that of diffusion of organic halide through the polymer matrix in an aqueous environment, as determined by aqueous ion extraction. High thermal stability of the C-Br bond in the resins as well as purity of the material from halogenated organic residues was found to be crucial for superior reliability of aluminum metallization and gold wire bond in epoxy plastic-encapsulated VLSI devices.<>
{"title":"Effect of high thermal stability mold material on the gold-aluminum bond reliability in epoxy encapsulated VLSI devices","authors":"Muhib M. Khan, H. Fatemi, J. Romero, Eugene A. Delenia","doi":"10.1109/RELPHY.1988.23424","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23424","url":null,"abstract":"Cresolic epoxy novolac resins brominated by specially tailored brominating agents to impart a high C-Br bond energy have provided encapsulants with enhanced thermal stability. By isothermal bakes at temperatures from 190 to 250 degrees C, decomposition times of the experimental encapsulants were found to be three to four times longer than of a state-of-the-art commercial material. The presence of halogenated organic residues among some of the experimental materials was found to cause increased gold-aluminum wire-bond failure through degradation of the intermetallic. These residues were byproducts of resin synthesis, which were eliminated by modification of the chemistry and processing. After such modification, the halogen-induced failure time was found to be prolonged by as much as 80% compared to a commercial resin. The apparent activation energy of bond failure was 0.8 eV, which was found to equal that of diffusion of organic halide through the polymer matrix in an aqueous environment, as determined by aqueous ion extraction. High thermal stability of the C-Br bond in the resins as well as purity of the material from halogenated organic residues was found to be crucial for superior reliability of aluminum metallization and gold wire bond in epoxy plastic-encapsulated VLSI devices.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117346866","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23435
Y. Umemoto, N. Matsunaga, K. Mitsusada
The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model.<>
{"title":"Alpha-particle-induced soft-error mechanism in semi-insulating GaAs substrate","authors":"Y. Umemoto, N. Matsunaga, K. Mitsusada","doi":"10.1109/RELPHY.1988.23435","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23435","url":null,"abstract":"The primary mechanism which causes alpha-particle-induced soft error in GaAs ICs is clarified. A description is given of a charge-collection model that includes a bipolar mechanism. It is shown that mechanism causes about 90% of the total collected charge in the n-i-n isolation structure and that suppressing it is the most effective way to prevent soft error in GaAs ICs. Experimental results are presented and shown to agree with predictions based on the model.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117251447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23454
T. Green
In 1986, Rome Air Development Center (RADC) initiated a microcircuit and hybrid field return and failure analysis program. Data from that program along with case studies from each of the three major failure categories are presented. Emphasis is placed on microcircuit failures that were the result of design, fabrication and assembly defects. The purpose of the RADC work is to lay the groundwork for a US Department of Defense parts return and failure analysis program and to demonstrate the importance of analyzing field failures.<>
{"title":"A review of IC fabrication design and assembly defects manifested as field failures in Air Force avionic equipment","authors":"T. Green","doi":"10.1109/RELPHY.1988.23454","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23454","url":null,"abstract":"In 1986, Rome Air Development Center (RADC) initiated a microcircuit and hybrid field return and failure analysis program. Data from that program along with case studies from each of the three major failure categories are presented. Emphasis is placed on microcircuit failures that were the result of design, fabrication and assembly defects. The purpose of the RADC work is to lay the groundwork for a US Department of Defense parts return and failure analysis program and to demonstrate the importance of analyzing field failures.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127843467","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23444
G. Verma, N. Mielke
The reliability performance of a 64 K flash memory based on a single-transistor, floating-gate memory cell is considered. The reliability performance of these memories, before program/erase cycling, matches that of UV EPROMs. Cycling generally does not introduce defect-related failures common to some EEPROMs. However, it may aggravate two intrinsic instabilities found in the UV EPROM (intrinsic charge loss and the DC program disturb mechanism). Experience shows that these are related effects caused by injection of holes during the erase step of the cycle. High source-to-substrate electric fields, during erase, generate these holes. Channel hot electron injection, for programming, plays no significant role in the observed degradation. These cycling effects can be addressed through incorporation of additional margin into the flash cell. Through such cell optimization, the reliability of these memories is made equivalent to that of conventional UV EPROMs, even after hundreds of program/erase cycles.<>
{"title":"Reliability performance of ETOX based flash memories","authors":"G. Verma, N. Mielke","doi":"10.1109/RELPHY.1988.23444","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23444","url":null,"abstract":"The reliability performance of a 64 K flash memory based on a single-transistor, floating-gate memory cell is considered. The reliability performance of these memories, before program/erase cycling, matches that of UV EPROMs. Cycling generally does not introduce defect-related failures common to some EEPROMs. However, it may aggravate two intrinsic instabilities found in the UV EPROM (intrinsic charge loss and the DC program disturb mechanism). Experience shows that these are related effects caused by injection of holes during the erase step of the cycle. High source-to-substrate electric fields, during erase, generate these holes. Channel hot electron injection, for programming, plays no significant role in the observed degradation. These cycling effects can be addressed through incorporation of additional margin into the flash cell. Through such cell optimization, the reliability of these memories is made equivalent to that of conventional UV EPROMs, even after hundreds of program/erase cycles.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"117 5 Suppl 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116376247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23449
H. Schafft, J. Lechner, B. Sabi, M. Mahaney, R.C. Smith
A comprehensive statistical basis is given for the design and conduction of electromigration stress tests that allows for the efficient use of test parts, equipment, and test time. It shows how to select the size of the sample, the required control of the stress conditions, and the number of failures required before halting the test in order to characterize metallization interconnects with a quantifiable level of confidence. The results are applicable to any failure mechanism for which the failure times obey a normal or log-normal distribution.<>
{"title":"Statistics for electromigration testing","authors":"H. Schafft, J. Lechner, B. Sabi, M. Mahaney, R.C. Smith","doi":"10.1109/RELPHY.1988.23449","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23449","url":null,"abstract":"A comprehensive statistical basis is given for the design and conduction of electromigration stress tests that allows for the efficient use of test parts, equipment, and test time. It shows how to select the size of the sample, the required control of the stress conditions, and the number of failures required before halting the test in order to characterize metallization interconnects with a quantifiable level of confidence. The results are applicable to any failure mechanism for which the failure times obey a normal or log-normal distribution.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116580636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23418
S. Aur, Amitava Chatterjee, T. Polgreen
The authors present a study of the impact of noncatastrophic electrostatic-discharge (ESD) stress on hot-electron reliability as well as the effect of hot electron (HE) injection on ESD protection threshold. It is found that there is a factor of two to four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar in that HE is a low-current long-time process and ESD is a high-current short-time process. Therefore the techniques for characterizing hot-electron degradation have been applied to quantify damage due to ESD stress. This technique shows electrical evidence of current filaments during an ESD.<>
{"title":"Hot electron reliability and ESD latent damage","authors":"S. Aur, Amitava Chatterjee, T. Polgreen","doi":"10.1109/RELPHY.1988.23418","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23418","url":null,"abstract":"The authors present a study of the impact of noncatastrophic electrostatic-discharge (ESD) stress on hot-electron reliability as well as the effect of hot electron (HE) injection on ESD protection threshold. It is found that there is a factor of two to four deterioration in hot-electron reliability after low-level ESD stress. These two effects can be viewed as similar in that HE is a low-current long-time process and ESD is a high-current short-time process. Therefore the techniques for characterizing hot-electron degradation have been applied to quantify damage due to ESD stress. This technique shows electrical evidence of current filaments during an ESD.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126745145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23440
J. Lee, I. Chen, C. Hu
A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modelled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness, process improvements including defect gettering, and alternative dielectrics such as CVD oxides are evaluated in terms of defect density as a function of effective oxide thinning.<>
{"title":"Statistical modeling of silicon dioxide reliability","authors":"J. Lee, I. Chen, C. Hu","doi":"10.1109/RELPHY.1988.23440","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23440","url":null,"abstract":"A technique is presented for predicting lifetime of an oxide to different voltages, different oxide areas and different temperatures. Using the defect density model in which defects are modelled as effective oxide thinning, many reliability parameters such as yield, failure rate, and screen time/screen yield can be predicted. Effects of oxide thickness, process improvements including defect gettering, and alternative dielectrics such as CVD oxides are evaluated in terms of defect density as a function of effective oxide thinning.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"37 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113938868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-04-12DOI: 10.1109/RELPHY.1988.23448
T. Kwok
The dependence of electromigration lifetime on the metal line geometry in Al-Cu submicron lines was investigated. Results indicated that as the linewidth decreases, the lifetime initially decreases and then increases below a crucial width. The lifetime also decreases with increasing film thickness. Those Al-Cu submicron lines with line width comparable to or smaller than film thickness have longer electromigration lifetime than other Al-Cu fine lines. The effect of line length on electromigration lifetime was found to be small.<>
{"title":"Effect of metal line geometry on electromigration lifetime in Al-Cu submicron interconnects","authors":"T. Kwok","doi":"10.1109/RELPHY.1988.23448","DOIUrl":"https://doi.org/10.1109/RELPHY.1988.23448","url":null,"abstract":"The dependence of electromigration lifetime on the metal line geometry in Al-Cu submicron lines was investigated. Results indicated that as the linewidth decreases, the lifetime initially decreases and then increases below a crucial width. The lifetime also decreases with increasing film thickness. Those Al-Cu submicron lines with line width comparable to or smaller than film thickness have longer electromigration lifetime than other Al-Cu fine lines. The effect of line length on electromigration lifetime was found to be small.<<ETX>>","PeriodicalId":102187,"journal":{"name":"26th Annual Proceedings Reliability Physics Symposium 1988","volume":"109 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-04-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124832818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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