Pub Date : 2024-03-01DOI: 10.1088/0256-307x/41/3/037103
Jianzhi Chen, Aoqian Shi, Yuchen Peng, Peng Peng, Jianjun Liu
Hybrid skin-topological effect (HSTE) in non-Hermitian systems exhibits both the skin effect and topological protection, offering a novel mechanism for localization of topological edge states (TESs) in electrons, circuits, and photons. However, it remains unclear whether the HSTE can be realized in quasicrystals, and the unique structure of quasicrystals with multi-site cells may provide novel localization phenomena for TESs induced by the HSTE. We propose an eight-site cell in two-dimensional quasicrystals and realize the HSTE with eight-site nonreciprocal intracell hoppings. Furthermore, we can arbitrarily adjust the eigenfield distributions of the TESs and discover domain walls associated with effective dissipation and their correlation with localization. We present a new scheme to precisely adjust the energy distribution in non-Hermitian quasicrystals with arbitrary polygonal outer boundaries.
{"title":"Hybrid Skin-Topological Effect Induced by Eight-Site Cells and Arbitrary Adjustment of the Localization of Topological Edge States","authors":"Jianzhi Chen, Aoqian Shi, Yuchen Peng, Peng Peng, Jianjun Liu","doi":"10.1088/0256-307x/41/3/037103","DOIUrl":"https://doi.org/10.1088/0256-307x/41/3/037103","url":null,"abstract":"Hybrid skin-topological effect (HSTE) in non-Hermitian systems exhibits both the skin effect and topological protection, offering a novel mechanism for localization of topological edge states (TESs) in electrons, circuits, and photons. However, it remains unclear whether the HSTE can be realized in quasicrystals, and the unique structure of quasicrystals with multi-site cells may provide novel localization phenomena for TESs induced by the HSTE. We propose an eight-site cell in two-dimensional quasicrystals and realize the HSTE with eight-site nonreciprocal intracell hoppings. Furthermore, we can arbitrarily adjust the eigenfield distributions of the TESs and discover domain walls associated with effective dissipation and their correlation with localization. We present a new scheme to precisely adjust the energy distribution in non-Hermitian quasicrystals with arbitrary polygonal outer boundaries.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"21 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140316986","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-03-01DOI: 10.1088/0256-307x/41/3/037302
Zhi-Wen Chang, Wei-Chang Hao, Miguel Bustamante, Xin Liu
We propose a method to construct Hopf insulators based on the study of topological defects from the geometric perspective of Hopf invariant I. Firstly, we prove two types of topological defects naturally inhering in the inner differential structure of the Hopf mapping. One type is the four-dimensional point defects, which lead to a topological phase transition occurring at the Dirac points. The other type is the three-dimensional merons, whose topological charges give the evaluations of I. Then, we show two ways to establish the Hopf insulator models. One approach is to modify the locations of merons, thereby the contributions of charges to I will change. The other is related to the number of defects. It is found that I will decrease if the number reduces, while increase if additional defects are added. The method developed in this study is expected to provide a new perspective for understanding the topological invariants, which opens a new door in exploring and designing novel topological materials in three dimensions.
我们从霍普夫不变量 I 的几何视角出发,提出了一种基于拓扑缺陷研究的霍普夫绝缘体构造方法。首先,我们证明了霍普夫映射的内微分结构中自然继承的两类拓扑缺陷。一种是四维点缺陷,它导致在狄拉克点发生拓扑相变。另一类是三维梅龙子,其拓扑电荷给出了 I 的估值。一种方法是改变梅龙子的位置,从而改变电荷对 I 的贡献。另一种方法与缺陷数量有关。研究发现,如果缺陷数量减少,I 会减小,而如果缺陷数量增加,I 会增大。本研究开发的方法有望为理解拓扑不变量提供一个新的视角,为探索和设计新型三维拓扑材料打开一扇新的大门。
{"title":"Constructing Hopf Insulator from Geometric Perspective of Hopf Invariant","authors":"Zhi-Wen Chang, Wei-Chang Hao, Miguel Bustamante, Xin Liu","doi":"10.1088/0256-307x/41/3/037302","DOIUrl":"https://doi.org/10.1088/0256-307x/41/3/037302","url":null,"abstract":"We propose a method to construct Hopf insulators based on the study of topological defects from the geometric perspective of Hopf invariant <italic toggle=\"yes\">I</italic>. Firstly, we prove two types of topological defects naturally inhering in the inner differential structure of the Hopf mapping. One type is the four-dimensional point defects, which lead to a topological phase transition occurring at the Dirac points. The other type is the three-dimensional merons, whose topological charges give the evaluations of <italic toggle=\"yes\">I</italic>. Then, we show two ways to establish the Hopf insulator models. One approach is to modify the locations of merons, thereby the contributions of charges to <italic toggle=\"yes\">I</italic> will change. The other is related to the number of defects. It is found that <italic toggle=\"yes\">I</italic> will decrease if the number reduces, while increase if additional defects are added. The method developed in this study is expected to provide a new perspective for understanding the topological invariants, which opens a new door in exploring and designing novel topological materials in three dimensions.","PeriodicalId":10344,"journal":{"name":"Chinese Physics Letters","volume":"128 1","pages":""},"PeriodicalIF":3.5,"publicationDate":"2024-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140311043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We report a high-average-power acousto-optic (AO) Q-switched intracavity frequency-doubled red laser based on a high-efficiency light-emitting-diode (LED) pumped two-rod Nd,Ce:YAG laser module. Under quasi-continuous wave operation conditions, a maximum output power of 1319.08 nm wavelength was achieved at 11.26 W at a repetition rate of 100 Hz, corresponding to a maximum optical efficiency of 13.9% and a slope efficiency of 17.9%. In the active Q-switched regime, the pulse energy of the laser was as high as 800 μJ at a repetition rate of 10 kHz with a pulse width of 1.5 μs. Under non-critical phase-matched KTP crystal conditions, an average power of 2.03 W of 658.66 nm through intracavity frequency-doubling was obtained at a repetition frequency of 10 kHz with a duration of 1.3 μs, and the M