Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993641
T. Morita, Y. Harada, F. Oki, H. Onoda
W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH/sub 4//WF/sub 6/ flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth.
{"title":"Suppression of tungsten irregular growth in W chemical vapor deposition","authors":"T. Morita, Y. Harada, F. Oki, H. Onoda","doi":"10.1109/ISSM.2000.993641","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993641","url":null,"abstract":"W irregular growth in low temperature W-CVD processes is a most important problem. We succeeded control of W irregular growth by adjusting the SiH/sub 4//WF/sub 6/ flow ratio, changing of W deposition sequence and adhesion layer annealing in reduction gases at ambient. We describe the control of the W irregular growth in low temperature W-CVD processes and also the mechanism of W irregular growth.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132190770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993611
E. Suzuki, H. Matsuda, Teiichirou Chiba, A. Mori
A conventional identification (ID) has many illegible parts; ID recognition is difficult in approximately 20% of all processes. In contrast, new IDs in the V-shaped notch were clearly recognized up to the final process. The results can be explained in terms of marking dot topography and choice of the marking location. First, for marking the beveled part in a V-shaped notch on a wafer, known as finer marking, the influence of any semiconductor processes in which a conventional ID on the surface has only limited readability is kept to a minimum. Second, a marking dot formed by conventional laser marking has a central depression due to the process of general heat distribution. In contrast, a marking dot formed by finer marking has a central peak protruding from the surface, which is more easily distinguished than a dot which has a central depression. A difference in contrast has a great influence on readability for identification in semiconductor processes.
{"title":"New identification system for individual wafer management","authors":"E. Suzuki, H. Matsuda, Teiichirou Chiba, A. Mori","doi":"10.1109/ISSM.2000.993611","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993611","url":null,"abstract":"A conventional identification (ID) has many illegible parts; ID recognition is difficult in approximately 20% of all processes. In contrast, new IDs in the V-shaped notch were clearly recognized up to the final process. The results can be explained in terms of marking dot topography and choice of the marking location. First, for marking the beveled part in a V-shaped notch on a wafer, known as finer marking, the influence of any semiconductor processes in which a conventional ID on the surface has only limited readability is kept to a minimum. Second, a marking dot formed by conventional laser marking has a central depression due to the process of general heat distribution. In contrast, a marking dot formed by finer marking has a central peak protruding from the surface, which is more easily distinguished than a dot which has a central depression. A difference in contrast has a great influence on readability for identification in semiconductor processes.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"305 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114048646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993674
I. Ohshima, Y. Ishihara, I. Akutsu, T. Ohmi
Introduction of rare Kr(Xe) gases into ULSI mass production requires the recycling of exhaust gases. We describe a gas pumping system that enables efficient recycling of Kr and Xe gases. A newly developed screw pump is able to exhaust without involving the atmosphere in its exhaust gases. Moreover, this screw pump needs a smaller volume of purge gases to realize clean pumping than conventional dry pumps. A novel bellows pump can compress recycle gases without involving the atmosphere. These pumping systems enable ultra clean process gas recycling system for the plasma process using krypton and xenon.
{"title":"Ultra clean process gas recycling system for plasma process using krypton and xenon","authors":"I. Ohshima, Y. Ishihara, I. Akutsu, T. Ohmi","doi":"10.1109/ISSM.2000.993674","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993674","url":null,"abstract":"Introduction of rare Kr(Xe) gases into ULSI mass production requires the recycling of exhaust gases. We describe a gas pumping system that enables efficient recycling of Kr and Xe gases. A newly developed screw pump is able to exhaust without involving the atmosphere in its exhaust gases. Moreover, this screw pump needs a smaller volume of purge gases to realize clean pumping than conventional dry pumps. A novel bellows pump can compress recycle gases without involving the atmosphere. These pumping systems enable ultra clean process gas recycling system for the plasma process using krypton and xenon.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122464929","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993609
Shi-Chung Chang, R. Guo, Y. Su, Y. Lai
In this paper a dynamic manufacturing service provisioning mechanism (DMSPM) is designed to flexibly create and execute manufacturing services under a virtual fab (VF) enabling framework The DMSPM exploits object-oriented (OO) technology to flexibly bind fab objects into services. It consists of four skeleton steps: name mapping, business process binding, resource reservation binding, and service management binding. To assess the feasibility and potential of DMSPM, the order commitment service (OCS) provided by a foundry serves as a study case. A prototype system is designed and implemented to realize DMSPM in the OCS application. The implementation demonstrated that current OO technology, CASE tools, Jab information infrastructure and data/information availability make DMSPM readily realizable and that DMSPM has a good potential for application to virtual Jab and e-business developments.
{"title":"Realizing dynamic manufacturing service provisioning mechanism in order commitment service","authors":"Shi-Chung Chang, R. Guo, Y. Su, Y. Lai","doi":"10.1109/ISSM.2000.993609","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993609","url":null,"abstract":"In this paper a dynamic manufacturing service provisioning mechanism (DMSPM) is designed to flexibly create and execute manufacturing services under a virtual fab (VF) enabling framework The DMSPM exploits object-oriented (OO) technology to flexibly bind fab objects into services. It consists of four skeleton steps: name mapping, business process binding, resource reservation binding, and service management binding. To assess the feasibility and potential of DMSPM, the order commitment service (OCS) provided by a foundry serves as a study case. A prototype system is designed and implemented to realize DMSPM in the OCS application. The implementation demonstrated that current OO technology, CASE tools, Jab information infrastructure and data/information availability make DMSPM readily realizable and that DMSPM has a good potential for application to virtual Jab and e-business developments.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128416926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993699
K.W. Chen, Y. Wang, T. Wang, J. Wang
Tungsten (W) chemical-mechanical planarization (CMP) characteristics are studied systematically for the optimization of process throughput and integration. By the advance surface analysis of tungsten film and polishing pad, the influence and deviation of surface roughness of tungsten film during CMP upon different hardness of pads were investigated. From the results of the experiment, this article attempts to address the key point of non-linear tungsten polishing performance, which is different from the linear polishing phenomena of oxide film. In addition, the phenomena provide the hint to fulfilling the optimized procedure to improve the throughput and cost; that is that multiple steps and pads could be required to resolve the redundant process and promote the throughput. Finally, the marathon test would prove the stability and flexibility of the optimized process. There is over 25% throughput improvement compared with vendor's best-known method. The 30% /spl sim/ 50% efficiency of extended pad life and cost of reduced slurry could be enhanced. Details of the developed and optimized theory are demonstrated and appear to be reproducible on tungsten CMP.
{"title":"Optimized process for tungsten chemical-mechanical planarization throughput improvement","authors":"K.W. Chen, Y. Wang, T. Wang, J. Wang","doi":"10.1109/ISSM.2000.993699","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993699","url":null,"abstract":"Tungsten (W) chemical-mechanical planarization (CMP) characteristics are studied systematically for the optimization of process throughput and integration. By the advance surface analysis of tungsten film and polishing pad, the influence and deviation of surface roughness of tungsten film during CMP upon different hardness of pads were investigated. From the results of the experiment, this article attempts to address the key point of non-linear tungsten polishing performance, which is different from the linear polishing phenomena of oxide film. In addition, the phenomena provide the hint to fulfilling the optimized procedure to improve the throughput and cost; that is that multiple steps and pads could be required to resolve the redundant process and promote the throughput. Finally, the marathon test would prove the stability and flexibility of the optimized process. There is over 25% throughput improvement compared with vendor's best-known method. The 30% /spl sim/ 50% efficiency of extended pad life and cost of reduced slurry could be enhanced. Details of the developed and optimized theory are demonstrated and appear to be reproducible on tungsten CMP.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116880383","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993608
Douglas Rettke
You are the factory manager with two processes running, a third scheduled to ramp down and a fourth scheduled to startup. Then the new loadings forecast comes out and you discover that the process your factory was going to ramp down is ramping up and the new process startup has been pulled in. Is your factory flexible enough to commit to the new loadings forecast and still meet the startup schedule? There is only one way to find out, you go to the Internet and consult the Route and Tool Readiness (RTR) System. The Route and Tool Readiness system is a spreadsheet-based system accessible from the Intel Intranet, which links information from several different sources to give an integrated view of a startup project. These include tool schedules, route information, throughput time data and engineering contact names. As the time between process development and process transfer into manufacturing continues to decrease, the RTR system becomes more critical. It enables factory management to successfully deal with last-minute technology changes during transfer as well as sudden shifts in market demand between multiple technologies. At the same time, it makes technology transfer projects more productive, accurate, and faster.
你是一个工厂经理，有两个进程正在运行，第三个计划下线，第四个计划启动。然后，新的负荷预测出来了，你发现你的工厂将要减少的过程正在增加，新的过程启动已经被拉进来。你的工厂是否足够灵活，能够保证新的负荷预测，并且仍然满足启动计划?只有一种方法可以找到答案，你去互联网上咨询路线和工具准备(RTR)系统。Route and Tool Readiness系统是一个基于电子表格的系统，可从英特尔内部网访问，该系统将来自多个不同来源的信息链接起来，以提供启动项目的综合视图。这些包括工具时间表，路线信息，吞吐量时间数据和工程联系人姓名。随着工艺开发和工艺转移到制造之间的时间不断缩短，RTR系统变得更加关键。它使工厂管理能够成功地处理转让过程中最后一刻的技术变更，以及多种技术之间市场需求的突然变化。同时，它使技术转移项目更加高效、准确和快速。
{"title":"Technology transfer at Internet speed","authors":"Douglas Rettke","doi":"10.1109/ISSM.2000.993608","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993608","url":null,"abstract":"You are the factory manager with two processes running, a third scheduled to ramp down and a fourth scheduled to startup. Then the new loadings forecast comes out and you discover that the process your factory was going to ramp down is ramping up and the new process startup has been pulled in. Is your factory flexible enough to commit to the new loadings forecast and still meet the startup schedule? There is only one way to find out, you go to the Internet and consult the Route and Tool Readiness (RTR) System. The Route and Tool Readiness system is a spreadsheet-based system accessible from the Intel Intranet, which links information from several different sources to give an integrated view of a startup project. These include tool schedules, route information, throughput time data and engineering contact names. As the time between process development and process transfer into manufacturing continues to decrease, the RTR system becomes more critical. It enables factory management to successfully deal with last-minute technology changes during transfer as well as sudden shifts in market demand between multiple technologies. At the same time, it makes technology transfer projects more productive, accurate, and faster.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115770717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993650
W. Riordan, R. Miller, J. Hicks
The results of multiple correlations between reliability and yield on a die level basis are presented for an advanced microprocessor fabricated using a 0.25 /spl mu/m, five layer metal CMOS logic process. Traceability information was programmed into each unit; investigated were infant mortality of edge die versus center die, effects of unusual sort yield signatures on infant mortality, alternating column effects, and the sources of variability of burn-in failures. The model that latent defect density is proportional to yield defect density was found to be in excellent agreement with experimental data over a wide range of yield values. The x-y die position yield was found to be an excellent predictor of infant mortality. The variation in infant mortality from wafer to wafer was found to be twice the lot to lot variation, consistent with the large number of single wafer processing tools used on advanced fabrication processes. Because the traceability information was part of the standard manufacturing flow this analysis was performed using very large, 1 million unit sample sizes.
{"title":"Reliability versus yield and die location in deep sub-micron VLSI","authors":"W. Riordan, R. Miller, J. Hicks","doi":"10.1109/ISSM.2000.993650","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993650","url":null,"abstract":"The results of multiple correlations between reliability and yield on a die level basis are presented for an advanced microprocessor fabricated using a 0.25 /spl mu/m, five layer metal CMOS logic process. Traceability information was programmed into each unit; investigated were infant mortality of edge die versus center die, effects of unusual sort yield signatures on infant mortality, alternating column effects, and the sources of variability of burn-in failures. The model that latent defect density is proportional to yield defect density was found to be in excellent agreement with experimental data over a wide range of yield values. The x-y die position yield was found to be an excellent predictor of infant mortality. The variation in infant mortality from wafer to wafer was found to be twice the lot to lot variation, consistent with the large number of single wafer processing tools used on advanced fabrication processes. Because the traceability information was part of the standard manufacturing flow this analysis was performed using very large, 1 million unit sample sizes.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114877394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993664
T. Ide, H. Tamegai
This paper presents a new technique for imaging material distribution based on a transmission electron micrograph. This technique, Fourier transform mapping, provides structural information of crystal with nanometer-scale resolution. This technique provides complimentary information to TEM-EDX technique, which provides microscopic information of chemical element. This technique is demonstrated by material analysis of LSI contacts. This demonstration shows the potential for Fourier transform mapping to be used as a microanalysis tool for LSI devices.
{"title":"Nanometer-scale material analysis using Fourier transform mapping","authors":"T. Ide, H. Tamegai","doi":"10.1109/ISSM.2000.993664","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993664","url":null,"abstract":"This paper presents a new technique for imaging material distribution based on a transmission electron micrograph. This technique, Fourier transform mapping, provides structural information of crystal with nanometer-scale resolution. This technique provides complimentary information to TEM-EDX technique, which provides microscopic information of chemical element. This technique is demonstrated by material analysis of LSI contacts. This demonstration shows the potential for Fourier transform mapping to be used as a microanalysis tool for LSI devices.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120937691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993672
I. Yokoi, Y. Yamazaki, T. Abe, T. Ohmi
This study was carried on to contribute the application of hydrogenated water to a future cooling water system. In order to much improve cost of ownership (CoO) of cooling water, we firstly introduced hydrogenated city water to the cooling water system. Compared to a hydrogenated ultrapure water (H/sub 2/-UPW), it has a high pH value, resulting in it having a low oxidation-reduction potential (ORP) value so that it has the characteristics of flowing out suppression on even the surface of an iron pipeline. This application, based on control of pH and ORP value in water, is a candidate for future cooling water system to achieve initial and running cost reduction as well as ESH (environment, safety and health) promotion.
{"title":"Application of hydrogenated water to future cooling system","authors":"I. Yokoi, Y. Yamazaki, T. Abe, T. Ohmi","doi":"10.1109/ISSM.2000.993672","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993672","url":null,"abstract":"This study was carried on to contribute the application of hydrogenated water to a future cooling water system. In order to much improve cost of ownership (CoO) of cooling water, we firstly introduced hydrogenated city water to the cooling water system. Compared to a hydrogenated ultrapure water (H/sub 2/-UPW), it has a high pH value, resulting in it having a low oxidation-reduction potential (ORP) value so that it has the characteristics of flowing out suppression on even the surface of an iron pipeline. This application, based on control of pH and ORP value in water, is a candidate for future cooling water system to achieve initial and running cost reduction as well as ESH (environment, safety and health) promotion.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133865231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-09-26DOI: 10.1109/ISSM.2000.993693
H. Ishikawa, M. Takamoto, K. Shimizu, H. Monji, G. Matsui
A new ultrasonic liquid flowmeter has been developed to measure very low flow rate. This flow meter consists of small disk ultrasonic transducers and measuring pipe whose diameter is less than 1 mm. The measuring pipe passed through the ultrasonic transducer two times making the loop feature. A very low flow rate less than 1ml/min can be measured accurately and stably.
{"title":"Development of a new ultrasonic liquid flowmeter for very low flow rate applicable to a thin pipe","authors":"H. Ishikawa, M. Takamoto, K. Shimizu, H. Monji, G. Matsui","doi":"10.1109/ISSM.2000.993693","DOIUrl":"https://doi.org/10.1109/ISSM.2000.993693","url":null,"abstract":"A new ultrasonic liquid flowmeter has been developed to measure very low flow rate. This flow meter consists of small disk ultrasonic transducers and measuring pipe whose diameter is less than 1 mm. The measuring pipe passed through the ultrasonic transducer two times making the loop feature. A very low flow rate less than 1ml/min can be measured accurately and stably.","PeriodicalId":104122,"journal":{"name":"Proceedings of ISSM2000. Ninth International Symposium on Semiconductor Manufacturing (IEEE Cat. No.00CH37130)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129438483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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