Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333187
A. Ikeda, H. Konishi, M. Sakai
A new method of designing re-entrant cavity bandpass filters is discussed. By using this method filters can be designed without any experimental trials. Filters are molded with identical outer dimensions over 4 to 8 GHz bands and mass produced. Their measurements coincide with theoretical results obtained by this new design method.
{"title":"A New Design Method of Re-Entrant Cavity Bandpass Filters","authors":"A. Ikeda, H. Konishi, M. Sakai","doi":"10.1109/EUMA.1983.333187","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333187","url":null,"abstract":"A new method of designing re-entrant cavity bandpass filters is discussed. By using this method filters can be designed without any experimental trials. Filters are molded with identical outer dimensions over 4 to 8 GHz bands and mass produced. Their measurements coincide with theoretical results obtained by this new design method.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124227270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333228
P. Wallace, Anthony A. Imrnorlica
An octave bandwidth power amplifier design which exploits the unique capabilities of a new miniature hybrid technology is presented. The technology features flip-chip mounted FETs which are placed directly on thin film matching circuits defined on high thermal conductivity BeO. One advantage of this approach is that novel topologies, such as the cascode configurations of this design, are easily implemented. Better than 7dB gain over 5 to 10 GHz with 25% power-added efficiency is predicted for this design which, with bias circuits, measures 4.4 × 6.4 mm.
{"title":"A Two-Watt 5-10 GHZ Miniature Cascode Amplifier Design using BeO Microwave Integrated Circuits","authors":"P. Wallace, Anthony A. Imrnorlica","doi":"10.1109/EUMA.1983.333228","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333228","url":null,"abstract":"An octave bandwidth power amplifier design which exploits the unique capabilities of a new miniature hybrid technology is presented. The technology features flip-chip mounted FETs which are placed directly on thin film matching circuits defined on high thermal conductivity BeO. One advantage of this approach is that novel topologies, such as the cascode configurations of this design, are easily implemented. Better than 7dB gain over 5 to 10 GHz with 25% power-added efficiency is predicted for this design which, with bias circuits, measures 4.4 × 6.4 mm.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128434184","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333227
T. Berceli, V. Geleji, K. Juhász, T. Kolumban
For the direct reception of satellite television broad-casting, a simple and inexpensive down-converter has been developed utilizing fin-line techniques. Filter and mixer layout is on a common substrate connected to a free running Gunn local oscillator. Excellent transmission quality has been observed testing the down-converter in a complete receiver.
{"title":"A Simple Down-Converter for the Direct Reception of Satellite Television Broadcasting","authors":"T. Berceli, V. Geleji, K. Juhász, T. Kolumban","doi":"10.1109/EUMA.1983.333227","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333227","url":null,"abstract":"For the direct reception of satellite television broad-casting, a simple and inexpensive down-converter has been developed utilizing fin-line techniques. Filter and mixer layout is on a common substrate connected to a free running Gunn local oscillator. Excellent transmission quality has been observed testing the down-converter in a complete receiver.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115409409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333234
A. Rosen, P. Stabile, J. McGinn, C. Wu, C. Magee, W. Landford
We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometry (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra -thin, reproducible wafers, and are currently being used in the development of silicon hybrid and monolithic integrated millimeter-wave sources.
{"title":"Silicon Monolithic Millimeter Wave Sources","authors":"A. Rosen, P. Stabile, J. McGinn, C. Wu, C. Magee, W. Landford","doi":"10.1109/EUMA.1983.333234","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333234","url":null,"abstract":"We have investigated novel techniques for the fabrication of silicon IMPATTdiodes for use at frequencies of up to 300 GHz. The basic techniques described are ion implantation, laser annealing, transmission electron microscopy (TEM), unique secondary ion mass spectrometry (SIMS - profile diagnostics), and novel wafer thinning. These techniques yield ultra -thin, reproducible wafers, and are currently being used in the development of silicon hybrid and monolithic integrated millimeter-wave sources.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125386221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333268
E. Friedler, Z. Bogan
The overall temperature stability of a dielectric resonator mounted in a MIC structure is calculated taking into account the influence of all structural parameters. Results are presented for various practical structures.
{"title":"The Frequency Stability of a Cylindrical Dielectric Resonator in MIC","authors":"E. Friedler, Z. Bogan","doi":"10.1109/EUMA.1983.333268","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333268","url":null,"abstract":"The overall temperature stability of a dielectric resonator mounted in a MIC structure is calculated taking into account the influence of all structural parameters. Results are presented for various practical structures.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126541201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333214
J. Pokorny
Interaction of electromagnetic fields with biological systems covers wide interdisciplinary area. The paper summarizes part of it, especially efflux of calcium ions from cerebral tissues, rotation of cells in an oscillating field, breakdown of cellular membranes, heating of biological tissues and its potential application in cancer therapy. Some characteristic features of the cell-generated oscillating fields are presented to point out possibility of microwave detection.
{"title":"Biological Effects of Microwaves and Cancer Treatment","authors":"J. Pokorny","doi":"10.1109/EUMA.1983.333214","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333214","url":null,"abstract":"Interaction of electromagnetic fields with biological systems covers wide interdisciplinary area. The paper summarizes part of it, especially efflux of calcium ions from cerebral tissues, rotation of cells in an oscillating field, breakdown of cellular membranes, heating of biological tissues and its potential application in cancer therapy. Some characteristic features of the cell-generated oscillating fields are presented to point out possibility of microwave detection.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125010454","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333295
R. Michelfeit, H. Thaler
An experimental characterization of state of the art microwave power amplifiers for high capacity 16 QAM digital radio systems is given. The effects of amplifier nonlinearities on 16 QAM signals are qualitatively demonstrated with the aid of real time signal state diagrams. A quantitative description is obtained by measured degradation of bit error ratio characteristics as a function of output power level. The comparison of the power capability shows advantages for modern high linearity TWTs over GaAs FET amplifiers at slightly superior efficiency. Techniquss for fast and easy characterization of nonlinear amplifiers are derived. Finally, methods to improve amplifier linearity are discussed.
{"title":"High Linearity Microwave Power Amplifiers for Digital Radio Relay Systems using 16 QAM","authors":"R. Michelfeit, H. Thaler","doi":"10.1109/EUMA.1983.333295","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333295","url":null,"abstract":"An experimental characterization of state of the art microwave power amplifiers for high capacity 16 QAM digital radio systems is given. The effects of amplifier nonlinearities on 16 QAM signals are qualitatively demonstrated with the aid of real time signal state diagrams. A quantitative description is obtained by measured degradation of bit error ratio characteristics as a function of output power level. The comparison of the power capability shows advantages for modern high linearity TWTs over GaAs FET amplifiers at slightly superior efficiency. Techniquss for fast and easy characterization of nonlinear amplifiers are derived. Finally, methods to improve amplifier linearity are discussed.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128277593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333197
U. Goebel, C. Schieblich
A general equivalent circuit representation of symmetrical junction circulators in E- and H-plane configuration is presented. Assuming single-resonant circuits for the eigen-immittances, the frequency response of conventional circulators is calculated. Design rules are given to achieve maximum bandwidth.
{"title":"A Unified Equivalent Circuit Representation for H- and E-Plane Junction Circulators","authors":"U. Goebel, C. Schieblich","doi":"10.1109/EUMA.1983.333197","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333197","url":null,"abstract":"A general equivalent circuit representation of symmetrical junction circulators in E- and H-plane configuration is presented. Assuming single-resonant circuits for the eigen-immittances, the frequency response of conventional circulators is calculated. Design rules are given to achieve maximum bandwidth.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127098102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333199
S. Tedjini, E. Pic, P. Saguet
In this paper, a semiconductor based fin-line isolator is analyzed. This device is based on field displacement effect phenomenon arising in a gyroelectric semiconductor (a theoretical method is presented). It is mainly an extension of the well known spectral domain approach. For this purpose, the semiconductor layer is taken into account through its conductivity tensor. Two semiconductors (GaAs and InSb) have been considered. The main parameters of the isolator such as isolation, insertion losses, band width are computed and compared with the experimental results. There is satisfactory agreement between theoretical and experimental results in the case of the GaAs. Finally it is pointed out that the InSb is the best choice.
{"title":"On the Research of Non Reciprocal Fin-Line Devices","authors":"S. Tedjini, E. Pic, P. Saguet","doi":"10.1109/EUMA.1983.333199","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333199","url":null,"abstract":"In this paper, a semiconductor based fin-line isolator is analyzed. This device is based on field displacement effect phenomenon arising in a gyroelectric semiconductor (a theoretical method is presented). It is mainly an extension of the well known spectral domain approach. For this purpose, the semiconductor layer is taken into account through its conductivity tensor. Two semiconductors (GaAs and InSb) have been considered. The main parameters of the isolator such as isolation, insertion losses, band width are computed and compared with the experimental results. There is satisfactory agreement between theoretical and experimental results in the case of the GaAs. Finally it is pointed out that the InSb is the best choice.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130696476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1983-09-01DOI: 10.1109/EUMA.1983.333211
R. Jansen
A survey is given describing the status of computer-aided design techniques as they are used today in the development of microwave integrated circuits. Some still existing deficiencies and fundamental problems are outlined. Parallel to this, the special requirements for the design of monolithic microwave circuits are discussed, as well as the impact which comes from the growing availability of economic, decentralized computer power. Some considerations concerning future developments are presented and a few representative design examples will be shown.
{"title":"Computer-Aided Design of Hybrid and Monolithic Microwave Integrated Circuits - State of the Art, Problems and Trends","authors":"R. Jansen","doi":"10.1109/EUMA.1983.333211","DOIUrl":"https://doi.org/10.1109/EUMA.1983.333211","url":null,"abstract":"A survey is given describing the status of computer-aided design techniques as they are used today in the development of microwave integrated circuits. Some still existing deficiencies and fundamental problems are outlined. Parallel to this, the special requirements for the design of monolithic microwave circuits are discussed, as well as the impact which comes from the growing availability of economic, decentralized computer power. Some considerations concerning future developments are presented and a few representative design examples will be shown.","PeriodicalId":105436,"journal":{"name":"1983 13th European Microwave Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1983-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130817451","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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