Pub Date : 1998-09-17DOI: 10.1364/cleo_europe.1998.cthk7
H. Yokoi, T. Mizumoto
Wafer direct bonding is an attractive technique for the integration of different materials without any adhesives. The authors have applied this technique to bonding of a III-V compound semiconductor and a garnet crystal for the aim of integrating a laser diode and an optical isolator. In a previous study, we demonstrated the bonding between InP and several kinds of garnets [1], the latter of which are essential to an optical isolator. Figure 1 shows a laser diode integrated with an optical isolator by wafer direct bonding. A GaInAsP etch stop layer of the laser diode is prepared for vertical alignment between an active layer of the laser diode and a guiding layer of the optical isolator. The vertical alignment can be achieved by adjusting the thickness of cladding layers. The lateral alignment of a waveguide with the laser stripe can be accomplished by conventional lithography and etching techniques. In this paper, we report the direct bonding between GaInAsP and Gd3Ga5O12 (GGG). GGG is used as a substrate for epitaxial growth of magnetic garnets.
{"title":"Low temperature wafer direct bonding between GaInAsP etch stop layer and Gd3Ga5O12","authors":"H. Yokoi, T. Mizumoto","doi":"10.1364/cleo_europe.1998.cthk7","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cthk7","url":null,"abstract":"Wafer direct bonding is an attractive technique for the integration of different materials without any adhesives. The authors have applied this technique to bonding of a III-V compound semiconductor and a garnet crystal for the aim of integrating a laser diode and an optical isolator. In a previous study, we demonstrated the bonding between InP and several kinds of garnets [1], the latter of which are essential to an optical isolator. Figure 1 shows a laser diode integrated with an optical isolator by wafer direct bonding. A GaInAsP etch stop layer of the laser diode is prepared for vertical alignment between an active layer of the laser diode and a guiding layer of the optical isolator. The vertical alignment can be achieved by adjusting the thickness of cladding layers. The lateral alignment of a waveguide with the laser stripe can be accomplished by conventional lithography and etching techniques. In this paper, we report the direct bonding between GaInAsP and Gd3Ga5O12 (GGG). GGG is used as a substrate for epitaxial growth of magnetic garnets.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"35 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-09-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74167118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-04-01DOI: 10.1103/PHYSREVB.57.9262
Z. Zhang, Bo-Cheng Lin, Xinglin Zeng, H. Elsayed-Ali
Superheating of solids is rarely observed due to the presence of a thin disordered surface layer formed below the melting point, Tm, which provides a nucleation site for melting. Premelting is particularly evident in open surfaces. While Pb(110) disorders at a temperature as low as 150 K below Tm = 600.7 K, Pb(111) remains ordered up to Tm - 0.05 K. [1]. Some surfaces that do not premelt can superheat under certain conditions [2-4], Superheating of Pb(111) and Bi(0001), and some superheating of Pb(100) by ~180 ps laser pulses was observed in time-resolved high-energy electron diffraction (RHEED) experiments [2-4], The Pb(111) and Bi(0001) surfaces superheat up to ~120 K and ~90 K above Tm of Pb and Bi, respectively. Evidence of residual order on Pb(100) up to ~15 K above Tm was also observed [3], Molecular dynamics simulations of surface melting of several fee metals showed a good agreement with the experimentally observed superheating of Pb(111) [5], One simulation showed that cooperative movement of the superheated surface atoms results in the filling of vacancies and the surface becomes atomically flat by a superheating surface repair process [5], This annealing mechanism was attributed to the high vibrational amplitudes which atoms are forced into by the ultrafast superheating pulse.
{"title":"Surface Morphology of Laser Superheated Pb(111) and Pb(100)","authors":"Z. Zhang, Bo-Cheng Lin, Xinglin Zeng, H. Elsayed-Ali","doi":"10.1103/PHYSREVB.57.9262","DOIUrl":"https://doi.org/10.1103/PHYSREVB.57.9262","url":null,"abstract":"Superheating of solids is rarely observed due to the presence of a thin disordered surface layer formed below the melting point, Tm, which provides a nucleation site for melting. Premelting is particularly evident in open surfaces. While Pb(110) disorders at a temperature as low as 150 K below Tm = 600.7 K, Pb(111) remains ordered up to Tm - 0.05 K. [1]. Some surfaces that do not premelt can superheat under certain conditions [2-4], Superheating of Pb(111) and Bi(0001), and some superheating of Pb(100) by ~180 ps laser pulses was observed in time-resolved high-energy electron diffraction (RHEED) experiments [2-4], The Pb(111) and Bi(0001) surfaces superheat up to ~120 K and ~90 K above Tm of Pb and Bi, respectively. Evidence of residual order on Pb(100) up to ~15 K above Tm was also observed [3], Molecular dynamics simulations of surface melting of several fee metals showed a good agreement with the experimentally observed superheating of Pb(111) [5], One simulation showed that cooperative movement of the superheated surface atoms results in the filling of vacancies and the surface becomes atomically flat by a superheating surface repair process [5], This annealing mechanism was attributed to the high vibrational amplitudes which atoms are forced into by the ultrafast superheating pulse.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84239877","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.ctui55
B. Matveev, N. Zotova, S. Karandashov, M. Remennyi, N. Il’inskava, N. Stus', V. Shustov, G. Talalakin, J. Malinen
The report presents data on narrow band (FWHM ≅ λmax/10) room temperature LEDs fabricated from InAsSbP/InAs heterostructures grown at Ioffe Institute and emitting in the 3.3-5.3 μm spectral range with emphasize on LEDs for methane (3.3 μm), carbon (4.3, 4.7 μm) and nitric (5.3 μm) oxides optical detection.
{"title":"InAsSbP/InAs LEDs FOR THE 3.3-S.3 μm SPECTRAL RANGE","authors":"B. Matveev, N. Zotova, S. Karandashov, M. Remennyi, N. Il’inskava, N. Stus', V. Shustov, G. Talalakin, J. Malinen","doi":"10.1364/cleo_europe.1998.ctui55","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.ctui55","url":null,"abstract":"The report presents data on narrow band (FWHM ≅ λmax/10) room temperature LEDs fabricated from InAsSbP/InAs heterostructures grown at Ioffe Institute and emitting in the 3.3-5.3 μm spectral range with emphasize on LEDs for methane (3.3 μm), carbon (4.3, 4.7 μm) and nitric (5.3 μm) oxides optical detection.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"238 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73643657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.cwf4
O. Musset, J. Boquillon
Neodimium-doped Potassium-Gadolinium Tungstate crystal KGd(W04)2 or Nd:KGW is a crystal whose structure allows high Nd doping (3 to 8%) without detrimental concentration quenching. In this way it can compete with Nd:YAG in terms of optical gain, despite a poorer thermal conductivity. We present here the results obtained at repetition rates up to 60 Hz. We tested several Nd:KGW rods from two different furnishers, with the same dimensions ( 6.35 x 76 mm) and different Nd dopant levels (from 2.8 to 8 at.%). The end faces were either flat/flat, parallel and AR-coated at 1.06 μm for the 1.06 μm emission or tilted (1°) and AR-coated for 1.06 and 1.35 μm for the 1.35 μm emission?
{"title":"Flashlamp-pumped Nd:KGW Laser at 1.06 and 135 μm in free-running and Q-switched mode. Results in MOPA configuration.","authors":"O. Musset, J. Boquillon","doi":"10.1364/cleo_europe.1998.cwf4","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cwf4","url":null,"abstract":"Neodimium-doped Potassium-Gadolinium Tungstate crystal KGd(W04)2 or Nd:KGW is a crystal whose structure allows high Nd doping (3 to 8%) without detrimental concentration quenching. In this way it can compete with Nd:YAG in terms of optical gain, despite a poorer thermal conductivity. We present here the results obtained at repetition rates up to 60 Hz. We tested several Nd:KGW rods from two different furnishers, with the same dimensions ( 6.35 x 76 mm) and different Nd dopant levels (from 2.8 to 8 at.%). The end faces were either flat/flat, parallel and AR-coated at 1.06 μm for the 1.06 μm emission or tilted (1°) and AR-coated for 1.06 and 1.35 μm for the 1.35 μm emission?","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"134 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74701279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.cwh6
R. Danielius, P. di Trapani, A. Dubietis, G. Valiulis
In X(2) cascading, two relevant phenomena are expected in case of suitable group-velocity mismatch (GVM) and group-velocity dispersion (GVD) material parameters: (i) if the GVM dominates and the low-frequency pulses run with opposite velocities respect to the high-frequency one, then interaction could lead to the so called “non-linear transient pulse compression” or to the elastic scattering of non-trapped soliton pulses, (ii) If the GVD dominates and has the same sign for all three waves, then mutually-trapped dispersion-free bright solitons (or quasi-solitons) are attained, due to the interplay between GVD and nonlinearity. Unfortunately, such operating conditions are hardly achievable in real experiments. Non-linear pulse compression was demonstrated only for very specific crystals and wavelengths; regarding the GVD solitons, they are commonly considered as not obtainable due to the low intrinsic dispersion of available X(2) materials, which makes the GVM split the interacting pulses before the trapping mechanism sets in. For a review of the argument, see ref. [1] and references therein.
{"title":"Tilted pulses and X(2) cascading: effects on transient compression and temporal-soliton formation","authors":"R. Danielius, P. di Trapani, A. Dubietis, G. Valiulis","doi":"10.1364/cleo_europe.1998.cwh6","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cwh6","url":null,"abstract":"In X(2) cascading, two relevant phenomena are expected in case of suitable group-velocity mismatch (GVM) and group-velocity dispersion (GVD) material parameters: (i) if the GVM dominates and the low-frequency pulses run with opposite velocities respect to the high-frequency one, then interaction could lead to the so called “non-linear transient pulse compression” or to the elastic scattering of non-trapped soliton pulses, (ii) If the GVD dominates and has the same sign for all three waves, then mutually-trapped dispersion-free bright solitons (or quasi-solitons) are attained, due to the interplay between GVD and nonlinearity. Unfortunately, such operating conditions are hardly achievable in real experiments. Non-linear pulse compression was demonstrated only for very specific crystals and wavelengths; regarding the GVD solitons, they are commonly considered as not obtainable due to the low intrinsic dispersion of available X(2) materials, which makes the GVM split the interacting pulses before the trapping mechanism sets in. For a review of the argument, see ref. [1] and references therein.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74912095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.cfh7
E. Takaoka, K. Kato
This paper reports what is believed to be the first attainment of tunable SHG in HgGa2S41,2. The HgGa2S4 crystal used in this experiment was 8 × 8 × 8 mm3 and fabricated at θ = 67.5° (θ = 22.5°) and ϕ = 0° with polished four side surfaces. The transmission range is 0.55 – 12.4 μm.
{"title":"Second-Harmonic Generation in HgGa2S4","authors":"E. Takaoka, K. Kato","doi":"10.1364/cleo_europe.1998.cfh7","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cfh7","url":null,"abstract":"This paper reports what is believed to be the first attainment of tunable SHG in HgGa2S41,2. The HgGa2S4 crystal used in this experiment was 8 × 8 × 8 mm3 and fabricated at θ = 67.5° (θ = 22.5°) and ϕ = 0° with polished four side surfaces. The transmission range is 0.55 – 12.4 μm.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74800996","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.cwf54
J. M. Ballesteros, C. Afonso, J. Solís, R. Serna
Metal nanocrystals embedded in dielectric matrices have been the subject of intense research during the last few years as promising candidates for all-optical switching applications. However, the lack of suitable techniques to produce these materials in waveguide configuration has hindered the use of nanocomposites in technological applications. Pulsed laser deposition (PLD) is a recently developed thin film technique that offers a new way to obtain and control the size and shape of the nanocrystals, thus introducing new possibilities to engineer the nonlinear optical parameters of the material. This work reports on the production of Cu nanocrystals embedded in amorphous Al2O3 matrix with a large nonlinear refractive index and a significantly reduced nonlinear absorption. The influence of the metal content and the measuring conditions on the nonlinear response of the nanocomposite films has been also analysed.
{"title":"Laser Synthesis of Nanocomposite Cu:Al2O3 thin Films for Nonlinear Optical Switching","authors":"J. M. Ballesteros, C. Afonso, J. Solís, R. Serna","doi":"10.1364/cleo_europe.1998.cwf54","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cwf54","url":null,"abstract":"Metal nanocrystals embedded in dielectric matrices have been the subject of intense research during the last few years as promising candidates for all-optical switching applications. However, the lack of suitable techniques to produce these materials in waveguide configuration has hindered the use of nanocomposites in technological applications. Pulsed laser deposition (PLD) is a recently developed thin film technique that offers a new way to obtain and control the size and shape of the nanocrystals, thus introducing new possibilities to engineer the nonlinear optical parameters of the material. This work reports on the production of Cu nanocrystals embedded in amorphous Al2O3 matrix with a large nonlinear refractive index and a significantly reduced nonlinear absorption. The influence of the metal content and the measuring conditions on the nonlinear response of the nanocomposite films has been also analysed.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"31 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78207605","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.ctub1
C. Bonner, C. Brown, D. Shepherd, W. Clarkson, R. Harris, A. Tropper, D. Hanna, B. Ferrand
There is a growing interest in using planar waveguides for high-power diode-pumped laser devices due to their geometrical compatibility with diode-bars and good thermal management capabilities. Here we report on our progress in constructing and characterising diode-bar, end and side-pumped Nd:YAG waveguide lasers.
{"title":"In-Plane Diode-Bar Pumped, Multi-Watt, Nd:Y3Al5On Planar Waveguide Lasers","authors":"C. Bonner, C. Brown, D. Shepherd, W. Clarkson, R. Harris, A. Tropper, D. Hanna, B. Ferrand","doi":"10.1364/cleo_europe.1998.ctub1","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.ctub1","url":null,"abstract":"There is a growing interest in using planar waveguides for high-power diode-pumped laser devices due to their geometrical compatibility with diode-bars and good thermal management capabilities. Here we report on our progress in constructing and characterising diode-bar, end and side-pumped Nd:YAG waveguide lasers.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72735548","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.ctub5
D. Sciancalepore, S. Balsamo, I. Montrosset
The generation of short optical pulses through mode locking of a laser by an internal phase or amplitude modulation is well known. In this paper FM and AM Mode Locking (ML) in Er:Ti:LiNbO3 fully integrated waveguide lasers [1] have been theoretically analyzed and compared.
{"title":"Modelling of FM and AM Mode Locked Er:Ti:LiNbO3 Waveguide Lasers","authors":"D. Sciancalepore, S. Balsamo, I. Montrosset","doi":"10.1364/cleo_europe.1998.ctub5","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.ctub5","url":null,"abstract":"The generation of short optical pulses through mode locking of a laser by an internal phase or amplitude modulation is well known. In this paper FM and AM Mode Locking (ML) in Er:Ti:LiNbO3 fully integrated waveguide lasers [1] have been theoretically analyzed and compared.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"57 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80501904","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1998-01-01DOI: 10.1364/cleo_europe.1998.cthe6
J. Wendland, H. Baker, D. Hall
The atomic xenon laser is an attractive candidate for remote sensing and other applications requiring low atmospheric absorption, due to the presence of a transmission window in the 3.5 - 4.2μm region. The xenon laser, configured with a non-dispersive resonator, produces a number of laser lines between 2.0-3.51μm when excited with a transverse radiofrequency discharge, with laser powers at the level ~5Watts. Experiments have shown that the gain in the atomic xenon laser is strongly dependent on the gas mixture, gas composition and pressure as well as the input RF power. Moreover, there are very strong competition effects, caused by the fact that many laser lines share either an upper or a lower level. These factors suggest the possibility of selecting a gas mixture which preferentially yields a higher laser gain for particular line at the expense of reduced gain for competitive lines.
{"title":"Operation of the atomic xenon laser near 4μm","authors":"J. Wendland, H. Baker, D. Hall","doi":"10.1364/cleo_europe.1998.cthe6","DOIUrl":"https://doi.org/10.1364/cleo_europe.1998.cthe6","url":null,"abstract":"The atomic xenon laser is an attractive candidate for remote sensing and other applications requiring low atmospheric absorption, due to the presence of a transmission window in the 3.5 - 4.2μm region. The xenon laser, configured with a non-dispersive resonator, produces a number of laser lines between 2.0-3.51μm when excited with a transverse radiofrequency discharge, with laser powers at the level ~5Watts. Experiments have shown that the gain in the atomic xenon laser is strongly dependent on the gas mixture, gas composition and pressure as well as the input RF power. Moreover, there are very strong competition effects, caused by the fact that many laser lines share either an upper or a lower level. These factors suggest the possibility of selecting a gas mixture which preferentially yields a higher laser gain for particular line at the expense of reduced gain for competitive lines.","PeriodicalId":10610,"journal":{"name":"Conference on Lasers and Electro-Optics Europe","volume":"24 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1998-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85079703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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