Pub Date : 2024-08-20DOI: 10.1016/j.commatsci.2024.113302
Silicon is the fundamental material for the semiconductor and microelectronics industries, but controlling the electronic band gap structure of diamond-type silicon remains a huge challenge to adapt to growing applications. Here, we have predicated 23 new silicon allotropes in space group P2/m from 279 possible structures by high-throughput screening accompanied by graph and group theory based on random strategy (RG2) code. The mechanical, electronic and optical properties of these structures were studied in detail. These novel silicon allotropes demonstrate various electronic structures, including metal, direct/quasi direct bandgap structure, and indirect bandgap structures. These new silicon allotropes demonstrate various electronic structures, including metal, direct/quasi direct bandgap structure, and indirect bandgap structures. Besides different electronic bandgap structures, all 23 structures exhibit strong absorption in the visible light region and P2/m-15 demonstrates the excellent mechanical properties (Bulk modulus beyond 80 GPa). Based on their nice stability, good mechanical, electronic and optical properties validated by the ab inito molecular dynamics simulation, phonon spectra and density functional theoretical calculations, these predicted silicon allotropes provide not only ideas for the synthesis of new silicon allotropes but also dawn for expanding the application of semiconductor materials.
{"title":"Stable novel silicon allotropes in space group P2/m with various band gap structures by high-throughput screening","authors":"","doi":"10.1016/j.commatsci.2024.113302","DOIUrl":"10.1016/j.commatsci.2024.113302","url":null,"abstract":"<div><p>Silicon is the fundamental material for the semiconductor and microelectronics industries, but controlling the electronic band gap structure of diamond-type silicon remains a huge challenge to adapt to growing applications. Here, we have predicated 23 new silicon allotropes in space group <em>P</em>2/<em>m</em> from 279 possible structures by high-throughput screening accompanied by graph and group theory based on random strategy (RG<sup>2</sup>) code. The mechanical, electronic and optical properties of these structures were studied in detail. These novel silicon allotropes demonstrate various electronic structures, including metal, direct/quasi direct bandgap structure, and indirect bandgap structures. These new silicon allotropes demonstrate various electronic structures, including metal, direct/quasi direct bandgap structure, and indirect bandgap structures. Besides different electronic bandgap structures, all 23 structures exhibit strong absorption in the visible light region and P2/m-15 demonstrates the excellent mechanical properties (Bulk modulus beyond 80 GPa). Based on their nice stability, good mechanical, electronic and optical properties validated by the ab inito molecular dynamics simulation, phonon spectra and density functional theoretical calculations, these predicted silicon allotropes provide not only ideas for the synthesis of new silicon allotropes but also dawn for expanding the application of semiconductor materials.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142012642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-20DOI: 10.1016/j.commatsci.2024.113304
This research examines the crucial role played by Cr23C6 carbides in hydrogen trapping and their subsequent impact on the mechanical properties of the material. The hydrogen solution energies at different defect sites within the bulk phase of Cr23C6 and the Ni/Cr23C6 interface were analyzed using first-principles computations. This study underscores the notable vulnerability of nickel-based alloys to hydrogen embrittlement as the carbide content increases. Substantial hydrogen enrichment at the Ni/Cr23C6 interface, particularly at octahedral interstitial sites on the Ni side and C vacancies at the interface, was identified through comprehensive atomistic simulations. This enrichment negatively affects separation at the interface, indicating an increased risk of brittle fracture in the presence of hydrogen. By providing insights into the microscopic processes involved, our results seek to contribute to the development of nickel-based alloys that are more resistant to hydrogen, thereby influencing material selection and treatment in industrial applications prone to hydrogen embrittlement.
本研究探讨了 Cr23C6 碳化物在氢捕获中的关键作用及其对材料机械性能的影响。利用第一原理计算分析了 Cr23C6 体相和镍/Cr23C6 界面不同缺陷位点的氢溶解能。这项研究强调,随着碳化物含量的增加,镍基合金极易发生氢脆。通过全面的原子模拟,确定了镍/Cr23C6 界面的大量氢富集,特别是在镍侧的八面体间隙位点和界面上的 C 空位。这种富集对界面的分离产生了负面影响,表明在氢存在的情况下,脆性断裂的风险会增加。通过深入了解相关的微观过程,我们的研究结果旨在促进开发更耐氢的镍基合金,从而影响易发生氢脆的工业应用中的材料选择和处理。
{"title":"First-Principles study of hydrogen solubility and embrittlement of Cr23C6 in nickel-based alloys","authors":"","doi":"10.1016/j.commatsci.2024.113304","DOIUrl":"10.1016/j.commatsci.2024.113304","url":null,"abstract":"<div><p>This research examines the crucial role played by Cr<sub>23</sub>C<sub>6</sub> carbides in hydrogen trapping and their subsequent impact on the mechanical properties of the material. The hydrogen solution energies at different defect sites within the bulk phase of Cr<sub>23</sub>C<sub>6</sub> and the Ni/Cr<sub>23</sub>C<sub>6</sub> interface were analyzed using first-principles computations. This study underscores the notable vulnerability of nickel-based alloys to hydrogen embrittlement as the carbide content increases. Substantial hydrogen enrichment at the Ni/Cr<sub>23</sub>C<sub>6</sub> interface, particularly at octahedral interstitial sites on the Ni side and C vacancies at the interface, was identified through comprehensive atomistic simulations. This enrichment negatively affects separation at the interface, indicating an increased risk of brittle fracture in the presence of hydrogen. By providing insights into the microscopic processes involved, our results seek to contribute to the development of nickel-based alloys that are more resistant to hydrogen, thereby influencing material selection and treatment in industrial applications prone to hydrogen embrittlement.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142012639","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-20DOI: 10.1016/j.commatsci.2024.113286
Transition Metal Chalcogenide Perovskites (TMCP) have been in the spotlight due to their exceptional optoelectronic properties. is one among them with an experimental bandgap of 1.90 eV. If its bandgap is tuned to lower values, it can be employed in additional photovoltaic applications, such as solar cell absorbers. In this work, the transition metal element Zr in is substituted with Ti atoms in different proportions and the optoelectronic properties are investigated using Density Functional Theory (DFT). The optoelectronic calculations are all done using the DFT+U method including the spin–orbit coupling. With substitutional alloying, we successfully tuned the energy gap from 1.91 eV to 1.18 eV and the photovoltaic properties were also observed to be modified. For the substituted samples, large birefringence is observed. This indicates enhancement in optical anisotropy via substitutional alloying which is significant in both linear and nonlinear optoelectronic applications like polarizers, wave plates etc.
过渡金属钙钛矿(TMCP)因其卓越的光电特性而备受关注。CaZrS3 就是其中之一,其实验带隙为 1.90 eV。如果将其带隙调整到更低的值,就可以将其应用于更多的光电领域,如太阳能电池吸收器。在这项研究中,用不同比例的 Ti 原子取代了 CaZrS3 中的过渡金属元素 Zr,并使用密度泛函理论(DFT)研究了其光电特性。光电计算全部采用 DFT+U 方法,包括自旋轨道耦合。通过取代合金化,我们成功地将能隙从 1.91 eV 调整到了 1.18 eV,同时还观察到光电特性发生了变化。对于取代的 CaZr1-xTixS3 样品,我们观察到了较大的双折射。这表明通过置换合金增强了光学各向异性,这在偏振片、波板等线性和非线性光电应用中都非常重要。
{"title":"A DFT investigation of Ti-substituted CaZrS3 for tailored photovoltaic properties","authors":"","doi":"10.1016/j.commatsci.2024.113286","DOIUrl":"10.1016/j.commatsci.2024.113286","url":null,"abstract":"<div><p>Transition Metal Chalcogenide Perovskites (TMCP) have been in the spotlight due to their exceptional optoelectronic properties. <span><math><msub><mrow><mi>CaZrS</mi></mrow><mrow><mn>3</mn></mrow></msub></math></span> is one among them with an experimental bandgap of 1.90 eV. If its bandgap is tuned to lower values, it can be employed in additional photovoltaic applications, such as solar cell absorbers. In this work, the transition metal element Zr in <span><math><msub><mrow><mi>CaZrS</mi></mrow><mrow><mn>3</mn></mrow></msub></math></span> is substituted with Ti atoms in different proportions and the optoelectronic properties are investigated using Density Functional Theory (DFT). The optoelectronic calculations are all done using the DFT+U method including the spin–orbit coupling. With substitutional alloying, we successfully tuned the energy gap from 1.91 eV to 1.18 eV and the photovoltaic properties were also observed to be modified. For the substituted <span><math><mrow><msub><mrow><mi>CaZr</mi></mrow><mrow><mn>1</mn><mo>−</mo><mi>x</mi></mrow></msub><msub><mrow><mi>Ti</mi></mrow><mrow><mi>x</mi></mrow></msub><msub><mrow><mi>S</mi></mrow><mrow><mn>3</mn></mrow></msub></mrow></math></span> samples, large birefringence is observed. This indicates enhancement in optical anisotropy via substitutional alloying which is significant in both linear and nonlinear optoelectronic applications like polarizers, wave plates etc.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142012641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1016/j.commatsci.2024.113312
To explore the formation mechanism of native point defects in high Al content AlGaN film, the first principles methods are applied to study the native point defects in Al0.5Ga0.5N. The different kinds of vacancies, interstitials, and antisites are investigated. The formation energies of Al0.5Ga0.5N with native point defects under different charge states and growth conditions are analyzed and compared. Then, the preferable charge state, donor and acceptor properties of Al0.5Ga0.5N with different native point defects are explicitly obtained. The results show that AlN, GaN, Ali, and VN exhibit donor properties in p-type condition while VGa, VAl, VN, and NGa exhibit acceptor properties and can play roles as compensating center in n-type Al0.5Ga0.5N under metal rich condition. For N rich condition,VGa, VAl, NGa, and NAl are favorable acceptors in n-type Al0.5Ga0.5N. Meanwhile, the charge distribution and bonding state of Al0.5Ga0.5N with native point defects are explored. It is found the N atoms in Ni and NGa form covalent bond and ionic bond with atoms in Al0.5Ga0.5N. Moreover, the band calculation reveals that the removal of N atom in Al0.5Ga0.5N makes the conduction band fatter and the effective masses of electrons increase while the introduction of N point defects make the valence band flatter, increasing the effective masses of holes. Furthermore, the corresponding thermodynamic transition energy levels of defects under different charge states are summarized. It is found that the thermodynamic transitions for VN, Ni, and NAl may likely to happen under certain conditions. The above studies yield a detailed and quantitative description of native point defects in Al0.5Ga0.5N, which helps to get a deeper insight to the growth and doping of AlGaN.
为了探索高铝含量 AlGaN 薄膜中原生点缺陷的形成机制,我们采用第一性原理方法研究了 Al0.5Ga0.5N 中的原生点缺陷。研究了不同种类的空位、间隙和反位错。分析并比较了带有原生点缺陷的 Al0.5Ga0.5N 在不同电荷状态和生长条件下的形成能。然后,明确得出了具有不同原生点缺陷的 Al0.5Ga0.5N 的优选电荷态、供体和受体特性。结果表明,AlN、GaN、Ali 和 VN 在 p 型条件下表现出供体特性,而 VGa、VAl、VN 和 NGa 则表现出受体特性,并能在富金属条件下的 n 型 Al0.5Ga0.5N 中发挥补偿中心的作用。在富氮条件下,VGa、VAl、NGa 和 NAl 是 n 型 Al0.5Ga0.5N 中的有利受体。同时,研究了存在原生点缺陷的 Al0.5Ga0.5N 的电荷分布和成键状态。研究发现,Ni 和 NGa 中的 N 原子与 Al0.5Ga0.5N 中的原子形成共价键和离子键。此外,能带计算表明,在 Al0.5Ga0.5N 中去除 N 原子会使导带变宽,电子的有效质量增大;而引入 N 点缺陷会使价带变平,空穴的有效质量增大。此外,还总结了不同电荷态下缺陷相应的热力学转变能级。研究发现,VN、Ni 和 NAl 的热力学转变可能会在某些条件下发生。上述研究详细定量地描述了 Al0.5Ga0.5N 中的原生点缺陷,有助于深入了解 AlGaN 的生长和掺杂。
{"title":"Study of native point defects in Al0.5Ga0.5N by first principles calculations","authors":"","doi":"10.1016/j.commatsci.2024.113312","DOIUrl":"10.1016/j.commatsci.2024.113312","url":null,"abstract":"<div><p>To explore the formation mechanism of native point defects in high Al content AlGaN film, the first principles methods are applied to study the native point defects in Al<sub>0.5</sub>Ga<sub>0.5</sub>N. The different kinds of vacancies, interstitials, and antisites are investigated. The formation energies of Al<sub>0.5</sub>Ga<sub>0.5</sub>N with native point defects under different charge states and growth conditions are analyzed and compared. Then, the preferable charge state, donor and acceptor properties of Al<sub>0.5</sub>Ga<sub>0.5</sub>N with different native point defects are explicitly obtained. The results show that <em>Al<sub>N</sub></em>, <em>Ga<sub>N</sub></em>, <em>Al</em><sub>i</sub>, and <em>V<sub>N</sub></em> exhibit donor properties in p-type condition while <em>V<sub>Ga</sub></em>, <em>V<sub>Al</sub></em>, <em>V<sub>N</sub></em>, and <em>N<sub>Ga</sub></em> exhibit acceptor properties and can play roles as compensating center in n-type Al<sub>0.5</sub>Ga<sub>0.5</sub>N under metal rich condition. For N rich condition,<em>V<sub>Ga</sub></em>, <em>V</em><sub>Al</sub>, <em>N<sub>Ga</sub></em>, and <em>N<sub>Al</sub></em> are favorable acceptors in n-type Al<sub>0.5</sub>Ga<sub>0.5</sub>N. Meanwhile, the charge distribution and bonding state of Al<sub>0.5</sub>Ga<sub>0.5</sub>N with native point defects are explored. It is found the N atoms in <em>N<sub>i</sub></em> and <em>N<sub>Ga</sub></em> form covalent bond and ionic bond with atoms in Al<sub>0.5</sub>Ga<sub>0.5</sub>N. Moreover, the band calculation reveals that the removal of N atom in Al<sub>0.5</sub>Ga<sub>0.5</sub>N makes the conduction band fatter and the effective masses of electrons increase while the introduction of N point defects make the valence band flatter, increasing the effective masses of holes. Furthermore, the corresponding thermodynamic transition energy levels of defects under different charge states are summarized. It is found that the thermodynamic transitions for <em>V<sub>N</sub></em>, <em>N<sub>i</sub></em>, and <em>N<sub>Al</sub></em> may likely to happen under certain conditions. The above studies yield a detailed and quantitative description of native point defects in Al<sub>0.5</sub>Ga<sub>0.5</sub>N, which helps to get a deeper insight to the growth and doping of AlGaN.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142012643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1016/j.commatsci.2024.113295
The water in coal causes many negative effects on the processing and utilization of coal. Oxygen-containing functional groups (OFGs) are primary adsorption sites for water molecules on coal surfaces. However, little is known about the adsorption configuration of water clusters on OFGs. In this study, density functional theory (DFT) calculations were used to predict the adsorption configurations of water clusters on –COOH and –OH. The results indicated that water clusters tend to form quadrilateral and cubic shapes on both –COOH and –OH, with quadrilateral water clusters being more stable than cubic water clusters. The cubic water cluster is adsorbed on –COOH through two water molecules that directly form hydrogen bonds with –COOH. In contrast, the cubic water cluster is adsorbed on –OH through a water molecule at one of its vertices. The strong attraction of –COOH to water molecules introduces a minor defect in the cubic water cluster. Because of the synergistic effect of neighboring OFGs on the adsorption of water molecules, the average adsorption energy of water molecules is greater than that of water clusters on a single OFG. These results provide valuable microstructural insights into the adsorption of water on coal.
{"title":"Predicting the adsorption configurations of water clusters on –COOH and –OH using DFT calculations","authors":"","doi":"10.1016/j.commatsci.2024.113295","DOIUrl":"10.1016/j.commatsci.2024.113295","url":null,"abstract":"<div><p>The water in coal causes many negative effects on the processing and utilization of coal. Oxygen-containing functional groups (OFGs) are primary adsorption sites for water molecules on coal surfaces. However, little is known about the adsorption configuration of water clusters on OFGs. In this study, density functional theory (DFT) calculations were used to predict the adsorption configurations of water clusters on –COOH and –OH. The results indicated that water clusters tend to form quadrilateral and cubic shapes on both –COOH and –OH, with quadrilateral water clusters being more stable than cubic water clusters. The cubic water cluster is adsorbed on –COOH through two water molecules that directly form hydrogen bonds with –COOH. In contrast, the cubic water cluster is adsorbed on –OH through a water molecule at one of its vertices. The strong attraction of –COOH to water molecules introduces a minor defect in the cubic water cluster. Because of the synergistic effect of neighboring OFGs on the adsorption of water molecules, the average adsorption energy of water molecules is greater than that of water clusters on a single OFG. These results provide valuable microstructural insights into the adsorption of water on coal.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142012640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-19DOI: 10.1016/j.commatsci.2024.113282
In-plane Transition Metal Dichalcogenides (TMDs) heterostructures hold immense potential for various applications in the modern semiconductor industry, including electronics, optoelectronics, and photovoltaic devices. Different TMD monolayers can be ‘stitched’ together to construct an in-plane (lateral) heterostructure. As different TMD monolayers present different work functions and have their intrinsic shortcomings, a TMD heterostructure is an excellent form to optimize their properties and to achieve the best functionality. This requires a quantitative understanding of the properties of the interfaces in the heterostructures. In this work, we perform nonequilibrium molecular dynamics simulations, based on a parametrized Stillinger-Weber potential, to investigates the thermal conductance of the interfaces in 2D and in-plane heterostructures, as well as in 2D lateral superlattices. Three distinct types of interfaces, including defect-free coherent interfaces, interfaces with the defects, and the alloy-like incoherent interfaces, are explored. The effects of interphase structure and temperature are quantified. Phonon density of states (PDOS) analysis is used to understand the effect of different interphase structures. The effect of superlattice period on thermal conductance of the superlattices has also been quantified.
{"title":"Interfacial thermal conductance in 2D WS2/MoSe2 and MoS2/MoSe2 lateral heterostructures","authors":"","doi":"10.1016/j.commatsci.2024.113282","DOIUrl":"10.1016/j.commatsci.2024.113282","url":null,"abstract":"<div><p>In-plane Transition Metal Dichalcogenides (TMDs) heterostructures hold immense potential for various applications in the modern semiconductor industry, including electronics, optoelectronics, and photovoltaic devices. Different TMD monolayers can be ‘stitched’ together to construct an in-plane (lateral) heterostructure. As different TMD monolayers present different work functions and have their intrinsic shortcomings, a TMD heterostructure is an excellent form to optimize their properties and to achieve the best functionality. This requires a quantitative understanding of the properties of the interfaces in the heterostructures. In this work, we perform nonequilibrium molecular dynamics simulations, based on a parametrized Stillinger-Weber potential, to investigates the thermal conductance of the interfaces in 2D <span><math><mrow><msub><mrow><mi>WS</mi></mrow><mrow><mn>2</mn></mrow></msub><mo>/</mo><msub><mrow><mi>MoSe</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> and <span><math><mrow><msub><mrow><mi>MoS</mi></mrow><mrow><mn>2</mn></mrow></msub><mo>/</mo><msub><mrow><mi>MoSe</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> in-plane heterostructures, as well as in 2D lateral <span><math><mrow><msub><mrow><mi>WS</mi></mrow><mrow><mn>2</mn></mrow></msub><mo>/</mo><msub><mrow><mi>MoSe</mi></mrow><mrow><mn>2</mn></mrow></msub></mrow></math></span> superlattices. Three distinct types of interfaces, including defect-free coherent interfaces, interfaces with the <span><math><mrow><mn>5</mn><mo>∣</mo><mn>7</mn></mrow></math></span> defects, and the alloy-like incoherent interfaces, are explored. The effects of interphase structure and temperature are quantified. Phonon density of states (PDOS) analysis is used to understand the effect of different interphase structures. The effect of superlattice period on thermal conductance of the superlattices has also been quantified.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142006591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-17DOI: 10.1016/j.commatsci.2024.113283
Selecting the best microscope parameters for optimal image quality currently relies on microscopists; there exist no procedures or guidelines for tuning parameters to ensure the desired image quality is achieved. More importantly, for quantitative analysis purposes, adequate image quality for segmentation should be prioritized. This paper is the second of two parts, describing a regression model, mixed input, multiple output with Keras TensorFlow, trained to predict the beam energy and probe current, two important parameters for image quality. Specifically, parameters are predicted to optimize the image quality for segmentation, using a generated training set, as described in Part 1 of this paper. Model performance is then tested on models trained with multiple different training sets, and with different proportions of simulated and acquired data. First, to examine the impact of the training set on the prediction accuracy and then, to evaluate the importance of including real data during training. The model successfully predicted the beam energy and probe current to set on the microscope to improve image quality for segmentation. Models trained with both simulated and acquired data performed the best, as evaluated by their efficacy at improving the image quality for feature segmentation.
目前,选择最佳显微镜参数以获得最佳图像质量的工作主要依靠显微镜专家;目前还没有调整参数以确保获得理想图像质量的程序或指南。更重要的是,出于定量分析的目的,应优先考虑用于分割的适当图像质量。本文是两部分中的第二部分,介绍使用 Keras TensorFlow 训练的回归模型、混合输入、多重输出,以预测光束能量和探针电流这两个影响图像质量的重要参数。具体来说,如本文第一部分所述,使用生成的训练集预测参数,以优化分割图像的质量。然后,使用多个不同的训练集、不同比例的模拟数据和获取的数据对训练出的模型进行性能测试。首先,测试训练集对预测准确性的影响,然后,评估在训练过程中加入真实数据的重要性。该模型成功预测了显微镜上应设置的光束能量和探针电流,从而提高了分割图像的质量。使用模拟数据和获取的数据训练的模型表现最佳,其评价标准是模型在提高图像质量以进行特征分割方面的功效。
{"title":"Optimizing SEM parameters for segmentation with AI – Part 2: Designing and training a regression model","authors":"","doi":"10.1016/j.commatsci.2024.113283","DOIUrl":"10.1016/j.commatsci.2024.113283","url":null,"abstract":"<div><p>Selecting the best microscope parameters for optimal image quality currently relies on microscopists; there exist no procedures or guidelines for tuning parameters to ensure the desired image quality is achieved. More importantly, for quantitative analysis purposes, adequate image quality for segmentation should be prioritized. This paper is the second of two parts, describing a regression model, mixed input, multiple output with Keras TensorFlow, trained to predict the beam energy and probe current, two important parameters for image quality. Specifically, parameters are predicted to optimize the image quality for segmentation, using a generated training set, as described in Part 1 of this paper. Model performance is then tested on models trained with multiple different training sets, and with different proportions of simulated and acquired data. First, to examine the impact of the training set on the prediction accuracy and then, to evaluate the importance of including real data during training. The model successfully predicted the beam energy and probe current to set on the microscope to improve image quality for segmentation. Models trained with both simulated and acquired data performed the best, as evaluated by their efficacy at improving the image quality for feature segmentation.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S0927025624005044/pdfft?md5=91d8ca5b2512ebcf564583e96b35d0d1&pid=1-s2.0-S0927025624005044-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142148902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-17DOI: 10.1016/j.commatsci.2024.113290
Magnetic tunnel junctions (MTJs) constructed from atomically thin two-dimensional (2D) magnetic materials have attracted great attention in recent years because it meets the requirements of miniaturization and high tunability of next-generation spintronic devices. In this work, we demonstrate that the ferromagnetic semiconductor VS is transformed into a half-metal in VS/MoSSe vdW heterostructure. Based on the heterostructure, we design an in-plane MTJs that comprise a monolayer VS barrier sandwiched between two VS/MoSSe heterostructure electrodes. Through density functional calculations combined with a nonequilibrium Green’s function technique, it is found that the tunnel magnetoresistance (TMR) ratio as high as 4.35 × 10 can be achieved. Moreover, the TMR ratio can be tuned by the barrier length, and the maximum value exceeds 10. These results not only provide a novel route for designing MTJs using 2D ferromagnetic semiconductor material, but also demonstrate the great importance of vdW heterostructures in the design of spintronic devices.
{"title":"Giant tunnel magnetoresistance in in-plane magnetic tunnel junctions based on the heterointerface-induced half-metallic 2H-VS2","authors":"","doi":"10.1016/j.commatsci.2024.113290","DOIUrl":"10.1016/j.commatsci.2024.113290","url":null,"abstract":"<div><p>Magnetic tunnel junctions (MTJs) constructed from atomically thin two-dimensional (2D) magnetic materials have attracted great attention in recent years because it meets the requirements of miniaturization and high tunability of next-generation spintronic devices. In this work, we demonstrate that the ferromagnetic semiconductor VS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> is transformed into a half-metal in VS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/MoSSe vdW heterostructure. Based on the heterostructure, we design an in-plane MTJs that comprise a monolayer VS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span> barrier sandwiched between two VS<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>/MoSSe heterostructure electrodes. Through density functional calculations combined with a nonequilibrium Green’s function technique, it is found that the tunnel magnetoresistance (TMR) ratio as high as 4.35 × 10<span><math><mrow><msup><mrow></mrow><mrow><mn>9</mn></mrow></msup><mtext>%</mtext></mrow></math></span> can be achieved. Moreover, the TMR ratio can be tuned by the barrier length, and the maximum value exceeds 10<span><math><mrow><msup><mrow></mrow><mrow><mn>15</mn></mrow></msup><mtext>%</mtext></mrow></math></span>. These results not only provide a novel route for designing MTJs using 2D ferromagnetic semiconductor material, but also demonstrate the great importance of vdW heterostructures in the design of spintronic devices.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141998201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-16DOI: 10.1016/j.commatsci.2024.113293
The knowledge of the thermophysical properties of liquid metals and alloys is essential for expanding the materials database and designing materials with good properties. In this work, we developed an interatomic potential using a deep neural network (DNN) algorithm for liquid Ag-Si alloys. Compared with ab initio molecular dynamics (AIMD) results, the DNN potential provided a good description of the information of energy, force, and structure features of the system in the simulated temperature range. Through this potential, we can obtain the thermophysical properties of different compositions of liquid alloys by simulation way. The computed thermophysical properties are in excellent agreement with the reported experimental data. The analysis of local structure indicates that the liquid ordering and stability strengthen upon cooling at the atomic level, eventually leading to an increase in thermophysical properties.
{"title":"Liquid thermophysical properties of Ag-Si alloy based on deep learning potential","authors":"","doi":"10.1016/j.commatsci.2024.113293","DOIUrl":"10.1016/j.commatsci.2024.113293","url":null,"abstract":"<div><p>The knowledge of the thermophysical properties of liquid metals and alloys is essential for expanding the materials database and designing materials with good properties. In this work, we developed an interatomic potential using a deep neural network (DNN) algorithm for liquid Ag-Si alloys. Compared with <em>ab initio</em> molecular dynamics (AIMD) results, the DNN potential provided a good description of the information of energy, force, and structure features of the system in the simulated temperature range. Through this potential, we can obtain the thermophysical properties of different compositions of liquid alloys by simulation way. The computed thermophysical properties are in excellent agreement with the reported experimental data. The analysis of local structure indicates that the liquid ordering and stability strengthen upon cooling at the atomic level, eventually leading to an increase in thermophysical properties.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141998200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-15DOI: 10.1016/j.commatsci.2024.113285
A comparative analysis of the physical properties of Gd2Zr2O7 weberite and pyrochlore is conducted using first-principles methods. The structural characteristics of Gd2Zr2O7 pyrochlore and weberite are examined at the atomic site, local coordination, and lattice parameter levels. The findings from ab initio molecular dynamics simulations and experimental data confirm the existence and stability of the Gd2Zr2O7 weberite structure at 300 K. The formation of cation antisite defects is calculated to be more facile in the weberite lattice compared to pyrochlore. The formation energy of vacancy defects is strongly correlated to the distinct defect configurations. The calculations further highlight that Gd2Zr2O7 weberite exhibits mechanical properties comparable to pyrochlore. The insulating nature, chemical bonding characteristics, and charge states of individual atoms in weberite and pyrochlore are elucidated through analysis of the partial density of states and Bader charges.
{"title":"A comparative first-principles study on the physical properties of Gd2Zr2O7 weberite and pyrochlore","authors":"","doi":"10.1016/j.commatsci.2024.113285","DOIUrl":"10.1016/j.commatsci.2024.113285","url":null,"abstract":"<div><p>A comparative analysis of the physical properties of Gd<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub> weberite and pyrochlore is conducted using first-principles methods. The structural characteristics of Gd<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub> pyrochlore and weberite are examined at the atomic site, local coordination, and lattice parameter levels. The findings from ab initio molecular dynamics simulations and experimental data confirm the existence and stability of the Gd<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub> weberite structure at 300 K. The formation of cation antisite defects is calculated to be more facile in the weberite lattice compared to pyrochlore. The formation energy of vacancy defects is strongly correlated to the distinct defect configurations. The calculations further highlight that Gd<sub>2</sub>Zr<sub>2</sub>O<sub>7</sub> weberite exhibits mechanical properties comparable to pyrochlore. The insulating nature, chemical bonding characteristics, and charge states of individual atoms in weberite and pyrochlore are elucidated through analysis of the partial density of states and Bader charges.</p></div>","PeriodicalId":10650,"journal":{"name":"Computational Materials Science","volume":null,"pages":null},"PeriodicalIF":3.1,"publicationDate":"2024-08-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141991232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}