Arindam Pramanik, R. Pandeya, S. Thakur, A. Thamizhavel, K. Maiti
In this paper, we report preparation and characterization of high quality single crystals of a topological crystalline insulator, SnTe. Samples were prepared using modified Bridgman method and were characterized by powder diffraction, Laue diffraction and energy dispersive x-ray diffraction method. From the resistivity measurements, the temperature for the displacive phase transition is determined to be 40 K. Furthermore, core level photoemission of Sn 3s and Te 3p using photon energy of 5945.24 eV at different temperatures shows that structural transition does not have discernible effect on the studied core level spectra. We observe intense satellite features in the core level spectra suggesting importance of electron correlation in the electronic properties of this system.In this paper, we report preparation and characterization of high quality single crystals of a topological crystalline insulator, SnTe. Samples were prepared using modified Bridgman method and were characterized by powder diffraction, Laue diffraction and energy dispersive x-ray diffraction method. From the resistivity measurements, the temperature for the displacive phase transition is determined to be 40 K. Furthermore, core level photoemission of Sn 3s and Te 3p using photon energy of 5945.24 eV at different temperatures shows that structural transition does not have discernible effect on the studied core level spectra. We observe intense satellite features in the core level spectra suggesting importance of electron correlation in the electronic properties of this system.
{"title":"Preparation and electronic structure study of a topological crystalline insulator, SnTe","authors":"Arindam Pramanik, R. Pandeya, S. Thakur, A. Thamizhavel, K. Maiti","doi":"10.1063/1.5113182","DOIUrl":"https://doi.org/10.1063/1.5113182","url":null,"abstract":"In this paper, we report preparation and characterization of high quality single crystals of a topological crystalline insulator, SnTe. Samples were prepared using modified Bridgman method and were characterized by powder diffraction, Laue diffraction and energy dispersive x-ray diffraction method. From the resistivity measurements, the temperature for the displacive phase transition is determined to be 40 K. Furthermore, core level photoemission of Sn 3s and Te 3p using photon energy of 5945.24 eV at different temperatures shows that structural transition does not have discernible effect on the studied core level spectra. We observe intense satellite features in the core level spectra suggesting importance of electron correlation in the electronic properties of this system.In this paper, we report preparation and characterization of high quality single crystals of a topological crystalline insulator, SnTe. Samples were prepared using modified Bridgman method and were characterized by powder diffraction, Laue diffraction and energy dispersive x-ray diffraction method. From the resistivity measurements, the temperature for the displacive phase transition is determined to be 40 K. Furthermore, core level photoemission of Sn 3s and Te 3p using photon energy of 5945.24 eV at different temperatures shows that structural transition does not have discernible effect on the studied core level spectra. We observe intense satellite features in the core level spectra suggesting importance of electron correlation in the electronic properties of this system.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87652344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Core shell nanoparticles have become an interesting topic of research because of their enhanced optical, catalytic and antibacterial property. Several alloy type nanoparticles have been synthesized like gold-silver, silver-gold, gold–silica, silver–silica, gold-platinum etc. In the present study we have demonstrated a new wet chemical route to synthesize gold-silver core shell nanoparticles using a medicinal plant extract, which act both as reducing agent and stabilizing agent. The method is facile and very fast. In the synthesis process, pre–synthesized spherical gold nano particles of 20-30 nm size served as nucleation sites for silver ions that formed coating over the gold core. The synthesized gold nano particles have been characterized by uv-vis spectroscopy, Transmission Electron Microscope (TEM) and zeta-potential analyser.
{"title":"Green synthesis of gold-silver core-shell nanoparticles and its characterizations","authors":"A. Roy, B. Mohanta","doi":"10.1063/1.5113020","DOIUrl":"https://doi.org/10.1063/1.5113020","url":null,"abstract":"Core shell nanoparticles have become an interesting topic of research because of their enhanced optical, catalytic and antibacterial property. Several alloy type nanoparticles have been synthesized like gold-silver, silver-gold, gold–silica, silver–silica, gold-platinum etc. In the present study we have demonstrated a new wet chemical route to synthesize gold-silver core shell nanoparticles using a medicinal plant extract, which act both as reducing agent and stabilizing agent. The method is facile and very fast. In the synthesis process, pre–synthesized spherical gold nano particles of 20-30 nm size served as nucleation sites for silver ions that formed coating over the gold core. The synthesized gold nano particles have been characterized by uv-vis spectroscopy, Transmission Electron Microscope (TEM) and zeta-potential analyser.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87120011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.
{"title":"Temperature dependent I-V characteristics of Ni doped topological insulator Bi2Se3 nanoparticles","authors":"K. Mazumder, Alfa Sharma, Y. Kumar, P. Shirage","doi":"10.1063/1.5112986","DOIUrl":"https://doi.org/10.1063/1.5112986","url":null,"abstract":"Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.Nanostructures of Bismuth Selenide (Bi2Se3), a 3D topological insulator material and Nickel (Ni) doped Bi2Se3 samples were prepared by a hydrothermal method to explore the I-V characteristics. The structural, morphological and optical properties were characterized by XRD, FESEM and UV-vis spectroscopy respectively. The temperature dependent I-V shows an enhancement in the current carrying properties of Ni doped Bi2Se3 due to surface defects and tailoring of optical properties. This study proposes applicability of Bi2Se3 topological insulators as next generation quantum computing materials.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"51 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90628678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Using first principle calculations, we studied the structural stability and electronic structure of Cr substituted MoS2. Different configurations corresponding to the substitution of two Cr atoms in a supercell of 96 atoms in the system are considered in our study. Our studies showed that the band gap of the system is preserved even when the system is substituted with two Cr atoms at the Mo positions in the supercell. The substituted system is found to be non-magnetic as the Cr atoms do not show any magnetic moment. We have evaluated the atom and orbital projected density of states of the system and the Cr d-states are found to lie at the bottom of the conduction band.Using first principle calculations, we studied the structural stability and electronic structure of Cr substituted MoS2. Different configurations corresponding to the substitution of two Cr atoms in a supercell of 96 atoms in the system are considered in our study. Our studies showed that the band gap of the system is preserved even when the system is substituted with two Cr atoms at the Mo positions in the supercell. The substituted system is found to be non-magnetic as the Cr atoms do not show any magnetic moment. We have evaluated the atom and orbital projected density of states of the system and the Cr d-states are found to lie at the bottom of the conduction band.
{"title":"Structural stability and electronic structure of Cr substituted MoS2: An ab-initio study","authors":"Aloka Ranjan Sahoo, S. Jaya","doi":"10.1063/1.5113232","DOIUrl":"https://doi.org/10.1063/1.5113232","url":null,"abstract":"Using first principle calculations, we studied the structural stability and electronic structure of Cr substituted MoS2. Different configurations corresponding to the substitution of two Cr atoms in a supercell of 96 atoms in the system are considered in our study. Our studies showed that the band gap of the system is preserved even when the system is substituted with two Cr atoms at the Mo positions in the supercell. The substituted system is found to be non-magnetic as the Cr atoms do not show any magnetic moment. We have evaluated the atom and orbital projected density of states of the system and the Cr d-states are found to lie at the bottom of the conduction band.Using first principle calculations, we studied the structural stability and electronic structure of Cr substituted MoS2. Different configurations corresponding to the substitution of two Cr atoms in a supercell of 96 atoms in the system are considered in our study. Our studies showed that the band gap of the system is preserved even when the system is substituted with two Cr atoms at the Mo positions in the supercell. The substituted system is found to be non-magnetic as the Cr atoms do not show any magnetic moment. We have evaluated the atom and orbital projected density of states of the system and the Cr d-states are found to lie at the bottom of the conduction band.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"226 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85570653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.
{"title":"Effect of glass boundaries on complex impedance and magnetoresistance of 99.5% La0.7Sr0.3MnO3-0.5% glass nanocomposite","authors":"Debajit Deb, P. Dey, S. Mandal, A. Nath","doi":"10.1063/1.5112922","DOIUrl":"https://doi.org/10.1063/1.5112922","url":null,"abstract":"We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85885649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.
{"title":"Effect of thermal annealing on structural, electrical and thermoelectric properties of p-type Bi0.5Sb1.5Te3","authors":"M. Bala, S. Annapoorni, K. Asokan","doi":"10.1063/1.5113165","DOIUrl":"https://doi.org/10.1063/1.5113165","url":null,"abstract":"The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"105 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85894059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bioglasses is promising good constitute material for bone repair with bioactive applications, dentine and orthopedic tissue regeneration in the human body. Thephysico-chemical characterisation of b...
生物玻璃是具有生物活性的骨修复材料、牙本质材料和骨科组织再生材料。b.的理化性质。
{"title":"In vitro bioactivity investigation of ZnO-Na2O-CaO-P2O5-SiO2 bioglass system for medical applications","authors":"M. Babu, P. Prasad","doi":"10.1063/1.5113109","DOIUrl":"https://doi.org/10.1063/1.5113109","url":null,"abstract":"Bioglasses is promising good constitute material for bone repair with bioactive applications, dentine and orthopedic tissue regeneration in the human body. Thephysico-chemical characterisation of b...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"70 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81483644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.
{"title":"Citrate sol-gel synthesis and luminescent properties of Cr3+-activated strontium gallate phosphor","authors":"Amba Mondal, J. Manam","doi":"10.1063/1.5113032","DOIUrl":"https://doi.org/10.1063/1.5113032","url":null,"abstract":"In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81503448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work thin films of the phase change material Ge2Sb2Te5 (GST), pure and Ag-doped, were studied. These films were prepared by thermal evaporation method. Amorphous nature of both pure and Ag-doped GST thin films has been confirmed from X-ray diffraction analysis. Raman spectra confirms the host structure of GST which is confirmed by the two sharp peaks at 126.4 cm−1 and 144.9 cm−1 for GST thin films. The hole concentration was found to increase by three orders of magnitude due to Ag doping, as measured by Hall measurements. I-V measurements of the samples show thermal switching at moderate voltage as large current flows through Ag-doped GST. The increase in conductivity was attributed to the crystallization of the films due to heating caused by the large electric current for I-V measurements.In this work thin films of the phase change material Ge2Sb2Te5 (GST), pure and Ag-doped, were studied. These films were prepared by thermal evaporation method. Amorphous nature of both pure and Ag-doped GST thin films has been confirmed from X-ray diffraction analysis. Raman spectra confirms the host structure of GST which is confirmed by the two sharp peaks at 126.4 cm−1 and 144.9 cm−1 for GST thin films. The hole concentration was found to increase by three orders of magnitude due to Ag doping, as measured by Hall measurements. I-V measurements of the samples show thermal switching at moderate voltage as large current flows through Ag-doped GST. The increase in conductivity was attributed to the crystallization of the films due to heating caused by the large electric current for I-V measurements.
{"title":"Effect of Ag doping on electrical properties Ge2Sb2Te5 thin films","authors":"N. Kanda, A. Thakur, Abhinav Pratap Singh","doi":"10.1063/1.5113099","DOIUrl":"https://doi.org/10.1063/1.5113099","url":null,"abstract":"In this work thin films of the phase change material Ge2Sb2Te5 (GST), pure and Ag-doped, were studied. These films were prepared by thermal evaporation method. Amorphous nature of both pure and Ag-doped GST thin films has been confirmed from X-ray diffraction analysis. Raman spectra confirms the host structure of GST which is confirmed by the two sharp peaks at 126.4 cm−1 and 144.9 cm−1 for GST thin films. The hole concentration was found to increase by three orders of magnitude due to Ag doping, as measured by Hall measurements. I-V measurements of the samples show thermal switching at moderate voltage as large current flows through Ag-doped GST. The increase in conductivity was attributed to the crystallization of the films due to heating caused by the large electric current for I-V measurements.In this work thin films of the phase change material Ge2Sb2Te5 (GST), pure and Ag-doped, were studied. These films were prepared by thermal evaporation method. Amorphous nature of both pure and Ag-doped GST thin films has been confirmed from X-ray diffraction analysis. Raman spectra confirms the host structure of GST which is confirmed by the two sharp peaks at 126.4 cm−1 and 144.9 cm−1 for GST thin films. The hole concentration was found to increase by three orders of magnitude due to Ag doping, as measured by Hall measurements. I-V measurements of the samples show thermal switching at moderate voltage as large current flows through Ag-doped GST. The increase in conductivity was attributed to the crystallization of the films due to heating caused by the large electric current for I-V measurements.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"285 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84708256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi
The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectr...
{"title":"Solution processed flexible photodiode based on poly(3-hexylthiophene):graphene composite","authors":"A. Yadav, Aditi Upadhyaya, S. Gupta, A. Verma, C. Negi","doi":"10.1063/1.5113057","DOIUrl":"https://doi.org/10.1063/1.5113057","url":null,"abstract":"The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectronic devices.The polymer-carbon nanocomposites have achieved a remarkable progress over the past years. Their unique electrical and optical properties have attracted the attention for photovoltaic and optoelectronic devices. Therefore, in this paper we report fabrication of P3HT:graphene nanocomposite based photodiode with the architecture PET/ITO/P3HT:graphene/Al on Indium tin oxide (ITO) coated flexible polyethylene terephthalate (PET) substrate. The measured current-voltage (I-V) characteristics of the fabricated device under dark condition were found to be similar to the Schottky diode. Various crucial diode parameters, such as ideality factor, barrier height, series resistance etc., have been estimated in the backdrop of Shockley model. The double logarithmic J-V characteristic analysis was carried out to determine the charge transport properties. Moreover, the device offers a good photoconductive behavior, which shows potential of graphene/polymer composite for development of flexible photovoltaic and optoelectr...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"353 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84876226","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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