Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.
{"title":"Electrical transport properties of Tb and Mn codoped bismuth ferrite embedded poly (vinyl alcohol) nanocomposite film","authors":"Monalisa Halder, A. Meikap","doi":"10.1063/1.5113268","DOIUrl":"https://doi.org/10.1063/1.5113268","url":null,"abstract":"Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.Tb and Mn codoped Bismuth Ferrite (BTFMO) nanoparticles of crystallite size 45 nm and 2.0 wt% BTFMO- PVA nanocomposite film are synthesized by sol gel method. From Williamson-Hall analysis, strain is found to be 0.4%. Morphological Study reveals the uniform dispersion of BTFMO nanofillers in the PVA matrix. Modified Cole-Cole model is well-fitted with the experimentally observed temperature dependent dielectric response of the film sample above room temperature. A non-Debye type asymmetric behavior is observed. Relaxation time tends to decrease with increasing temperature. Current-voltage study of the film under ±50 V applied voltage exhibits temperature dependent rectifying nature indicating the formation of back to back Schottky Barrier Diode (SBD) with barrier height 0.94eV.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"91 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80499971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bioglasses is promising good constitute material for bone repair with bioactive applications, dentine and orthopedic tissue regeneration in the human body. Thephysico-chemical characterisation of b...
生物玻璃是具有生物活性的骨修复材料、牙本质材料和骨科组织再生材料。b.的理化性质。
{"title":"In vitro bioactivity investigation of ZnO-Na2O-CaO-P2O5-SiO2 bioglass system for medical applications","authors":"M. Babu, P. Prasad","doi":"10.1063/1.5113109","DOIUrl":"https://doi.org/10.1063/1.5113109","url":null,"abstract":"Bioglasses is promising good constitute material for bone repair with bioactive applications, dentine and orthopedic tissue regeneration in the human body. Thephysico-chemical characterisation of b...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"70 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81483644","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this work, high power impulse magnetron sputtering (HiPIMS) was used for the first time to grow Fe4N films. The Fe4N phase can only be formed when N is precisely at 20 at. %. Therefore, it is expected that the Fe4N phase can be obtained by optimization of growth parameters such as N2 gas flow, substrate temperature (Ts) etc. We varied process parameters and found that under optimized conditions single phase Fe4N phase can be obtained at Ts=675 K. Depth profile of Fe4N sample was studied using secondary ion mass spectroscopy and it was found that substantial inter-diffusion takes place between the substrate-film interface when Ts=675 K. This prohibits accurate estimation of saturation magnetization (Ms) by bulk magnetization methods. By using surface sensitive soft x-ray magnetic circular dichroism (MCD) we found that Ms is close to its theoretical value of about 2.5 µB/Fe atom. These are first ever MCD measurements performed on the soft x-ray absorption beamline BL-01 at Indus-2 synchrotron radiation source.In this work, high power impulse magnetron sputtering (HiPIMS) was used for the first time to grow Fe4N films. The Fe4N phase can only be formed when N is precisely at 20 at. %. Therefore, it is expected that the Fe4N phase can be obtained by optimization of growth parameters such as N2 gas flow, substrate temperature (Ts) etc. We varied process parameters and found that under optimized conditions single phase Fe4N phase can be obtained at Ts=675 K. Depth profile of Fe4N sample was studied using secondary ion mass spectroscopy and it was found that substantial inter-diffusion takes place between the substrate-film interface when Ts=675 K. This prohibits accurate estimation of saturation magnetization (Ms) by bulk magnetization methods. By using surface sensitive soft x-ray magnetic circular dichroism (MCD) we found that Ms is close to its theoretical value of about 2.5 µB/Fe atom. These are first ever MCD measurements performed on the soft x-ray absorption beamline BL-01 at Indus-2 synchrotron radiation s...
{"title":"Preparation and characterization of Fe4N thin film deposited by high power impulse magnetron sputtering","authors":"N. Pandey, M. Gupta, D. M. Phase","doi":"10.1063/1.5113132","DOIUrl":"https://doi.org/10.1063/1.5113132","url":null,"abstract":"In this work, high power impulse magnetron sputtering (HiPIMS) was used for the first time to grow Fe4N films. The Fe4N phase can only be formed when N is precisely at 20 at. %. Therefore, it is expected that the Fe4N phase can be obtained by optimization of growth parameters such as N2 gas flow, substrate temperature (Ts) etc. We varied process parameters and found that under optimized conditions single phase Fe4N phase can be obtained at Ts=675 K. Depth profile of Fe4N sample was studied using secondary ion mass spectroscopy and it was found that substantial inter-diffusion takes place between the substrate-film interface when Ts=675 K. This prohibits accurate estimation of saturation magnetization (Ms) by bulk magnetization methods. By using surface sensitive soft x-ray magnetic circular dichroism (MCD) we found that Ms is close to its theoretical value of about 2.5 µB/Fe atom. These are first ever MCD measurements performed on the soft x-ray absorption beamline BL-01 at Indus-2 synchrotron radiation source.In this work, high power impulse magnetron sputtering (HiPIMS) was used for the first time to grow Fe4N films. The Fe4N phase can only be formed when N is precisely at 20 at. %. Therefore, it is expected that the Fe4N phase can be obtained by optimization of growth parameters such as N2 gas flow, substrate temperature (Ts) etc. We varied process parameters and found that under optimized conditions single phase Fe4N phase can be obtained at Ts=675 K. Depth profile of Fe4N sample was studied using secondary ion mass spectroscopy and it was found that substantial inter-diffusion takes place between the substrate-film interface when Ts=675 K. This prohibits accurate estimation of saturation magnetization (Ms) by bulk magnetization methods. By using surface sensitive soft x-ray magnetic circular dichroism (MCD) we found that Ms is close to its theoretical value of about 2.5 µB/Fe atom. These are first ever MCD measurements performed on the soft x-ray absorption beamline BL-01 at Indus-2 synchrotron radiation s...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82485523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Brushite (CaHPO4.2H2O), or Calcium Hydrogen Phosphate Dihydrate (CHPD), crystal is known as Phosphate stone and commonly found in urolithiasis. Brushite is comparatively hard and difficult to remove by shock waves and ultrasonic lithotripsy. The current study is conducted to find out the inhibiting effect of Potassium Dihydrogen Citrate (KDC) solution, on brushite crystals using single-diffusion gel growth technique, at room temperature. Star and needle type crystals are grown in gel medium. As the molar concentration of KDC solution added in the supernatant solution during crystal growth, the average size of grown brushite crystals decreases and for 0.5 M KDC solution, no growth of brushite crystals is observed. The possible mechanism is proposed with the help of Powder XRD, SEM and EDAX analyses. These in-vitro results can help to evaluate the risk factor of brushite crystals.
{"title":"Growth inhibition study of urinary type brushite crystal using potassium dihydrogen citrate solution","authors":"A. Bhojani, H. Jethva, M. Joshi","doi":"10.1063/1.5113256","DOIUrl":"https://doi.org/10.1063/1.5113256","url":null,"abstract":"Brushite (CaHPO4.2H2O), or Calcium Hydrogen Phosphate Dihydrate (CHPD), crystal is known as Phosphate stone and commonly found in urolithiasis. Brushite is comparatively hard and difficult to remove by shock waves and ultrasonic lithotripsy. The current study is conducted to find out the inhibiting effect of Potassium Dihydrogen Citrate (KDC) solution, on brushite crystals using single-diffusion gel growth technique, at room temperature. Star and needle type crystals are grown in gel medium. As the molar concentration of KDC solution added in the supernatant solution during crystal growth, the average size of grown brushite crystals decreases and for 0.5 M KDC solution, no growth of brushite crystals is observed. The possible mechanism is proposed with the help of Powder XRD, SEM and EDAX analyses. These in-vitro results can help to evaluate the risk factor of brushite crystals.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"36 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87542487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To bring solar/electrical-to-hydrogen energy conversion processes into reality by fabricating non noble metal catalyst is an important agenda of researchers now a days through hydrogen evolution reaction (HER) by electrochemical method. Non noble metal catalyst such as CuMoO4 nanoparticles were successfully synthesized by hydrothermal process. Synthesized sample were characterized by XRD, Raman and FT-IR analysis. Morphology of the sample was observed by SEM and HR-TEM analysis. HER was performed by modification of synthesized CuMoO4 on Glassy Carbon Electrode.To bring solar/electrical-to-hydrogen energy conversion processes into reality by fabricating non noble metal catalyst is an important agenda of researchers now a days through hydrogen evolution reaction (HER) by electrochemical method. Non noble metal catalyst such as CuMoO4 nanoparticles were successfully synthesized by hydrothermal process. Synthesized sample were characterized by XRD, Raman and FT-IR analysis. Morphology of the sample was observed by SEM and HR-TEM analysis. HER was performed by modification of synthesized CuMoO4 on Glassy Carbon Electrode.
{"title":"Hydrogen evolution reaction with transition metal molybdate as cathode material","authors":"S. Muthamizh, V. Narayanan, R. Jayavel","doi":"10.1063/1.5113392","DOIUrl":"https://doi.org/10.1063/1.5113392","url":null,"abstract":"To bring solar/electrical-to-hydrogen energy conversion processes into reality by fabricating non noble metal catalyst is an important agenda of researchers now a days through hydrogen evolution reaction (HER) by electrochemical method. Non noble metal catalyst such as CuMoO4 nanoparticles were successfully synthesized by hydrothermal process. Synthesized sample were characterized by XRD, Raman and FT-IR analysis. Morphology of the sample was observed by SEM and HR-TEM analysis. HER was performed by modification of synthesized CuMoO4 on Glassy Carbon Electrode.To bring solar/electrical-to-hydrogen energy conversion processes into reality by fabricating non noble metal catalyst is an important agenda of researchers now a days through hydrogen evolution reaction (HER) by electrochemical method. Non noble metal catalyst such as CuMoO4 nanoparticles were successfully synthesized by hydrothermal process. Synthesized sample were characterized by XRD, Raman and FT-IR analysis. Morphology of the sample was observed by SEM and HR-TEM analysis. HER was performed by modification of synthesized CuMoO4 on Glassy Carbon Electrode.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"85 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83477850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.
{"title":"Effect of glass boundaries on complex impedance and magnetoresistance of 99.5% La0.7Sr0.3MnO3-0.5% glass nanocomposite","authors":"Debajit Deb, P. Dey, S. Mandal, A. Nath","doi":"10.1063/1.5112922","DOIUrl":"https://doi.org/10.1063/1.5112922","url":null,"abstract":"We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.We have investigated complex impedance spectroscopy and magnetoresistance(MR) of 99.5% La0.7Sr0.3MnO3 (LSMO)-0.5% Glass nanocomposite material. We suppose, thin Glass boundary is formed at LSMO surface where depinning of grain boundary(GB) domain walls take place, from GB pinning centres, on application of magnetic field(H). Moreover, on application of temperature, conducting electrons at glass interface gain more thermal energy which also lead to temperature dependent electrical relaxation of the system. However the composite become more insulating on glass addition due to presence of intergranular glass barrier between neiboring LSMO grains. But surprisingly, MR of the composite indicate formation of very efficient spin polarized tunnel barrier on addition of glass at room temperature.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85885649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.
{"title":"Effect of thermal annealing on structural, electrical and thermoelectric properties of p-type Bi0.5Sb1.5Te3","authors":"M. Bala, S. Annapoorni, K. Asokan","doi":"10.1063/1.5113165","DOIUrl":"https://doi.org/10.1063/1.5113165","url":null,"abstract":"The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.The present study reports the effect of annealing on the phase, structure and thermoelectric properties of Bi0.5Sb1.5Te3 prepared by melt quenching method. The extracted ingots were pelletized followed by annealing at 400°C. Microstructure of the as-extracted pellets contained Te-rich inclusions which disappeared on annealing due to Te sublimation. The Seebeck coefficient enhanced about two times on annealing due to significant increase in hole mobility. The combination of melt quenching followed by annealing is one of the effective ways to synthesize the high-performance BiSbTe-based materials.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"105 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85894059","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Ramarajan, M. Kovendhan, R. Babu, K. Thangaraju, D. Joseph
In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at two different temperature range from the Arrhenius plot (300 K to 572 K). The film deposited using 0.5 M solution has higher figure of merit value of 2.48×10−2 Ω−1 and is better than the film deposited using 0.3 M precursor solution.In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at t...
{"title":"Optimization and transport properties of ‘Nb’ doped SnO2 thin film as an alternate TCO application","authors":"R. Ramarajan, M. Kovendhan, R. Babu, K. Thangaraju, D. Joseph","doi":"10.1063/1.5113266","DOIUrl":"https://doi.org/10.1063/1.5113266","url":null,"abstract":"In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at two different temperature range from the Arrhenius plot (300 K to 572 K). The film deposited using 0.5 M solution has higher figure of merit value of 2.48×10−2 Ω−1 and is better than the film deposited using 0.3 M precursor solution.In this work, we present the results of optimization of ‘Nb’ doped tin oxide (Sn1-xNbxO2, NTO) thin films deposited by cost effective spray pyrolysis method onto glass substrates using 0.3 M and 0.5 M precursor solutions. The XRD spectrum of thin films clearly indicate polycrystalline nature with tetragonal structure. The 0.5 M concentration thin film was more textured than the 0.3 M concentration thin film indicating the influence of precursor concentration in textured growth. The surface morphology of the films showed twisted metal sheet like structure and the composition was confirmed by elemental analysis. The 0.5 M NTO thin film had a maximum average transmittance of 72% at 550 nm. The band gap values estimated from the tauc plot around 3.4 eV well matched with previous reports. The lowest sheet resistance of 30 Ω/□ and resistivity value of 9.05×10−4 Ω cm were achieved for the films prepared using 0.5 M precursor solution. The NTO thin film was found to possess two different conduction mechanism at t...","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"2 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83708825","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Payal Taya, V. Singh, D. Jana, R. Tyagi, T. Sharma
Photoluminescence (PL) and Photoluminescence Excitation (PLE) measurements are performed on MOVPE grown InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor Structures. Features associated with InAlN barrier layer, InGaN channel layer and GaN buffer layer are clearly seen in the PL spectra. A blueshift of PL features with excitation intensity is observed which is claimed to be the signature of 2-dimensional electron gas formed in InGaN layer. By comparing the integrated intensity of PL peaks recorded at 7K and room temperature, it is confirmed that the optical quality of InGaN and GaN layers is superior when compared with that of InAlN barrier layer in the HEMT structure. It is also seen that the PLE features of InGaN channel layer are considerably red shifted with respect to PL features of the same layer. It is explained by considering the screening of polarization induced electric field causing a blue shift in case of PL measurements.Photoluminescence (PL) and Photoluminescence Excitation (PLE) measurements are performed on MOVPE grown InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor Structures. Features associated with InAlN barrier layer, InGaN channel layer and GaN buffer layer are clearly seen in the PL spectra. A blueshift of PL features with excitation intensity is observed which is claimed to be the signature of 2-dimensional electron gas formed in InGaN layer. By comparing the integrated intensity of PL peaks recorded at 7K and room temperature, it is confirmed that the optical quality of InGaN and GaN layers is superior when compared with that of InAlN barrier layer in the HEMT structure. It is also seen that the PLE features of InGaN channel layer are considerably red shifted with respect to PL features of the same layer. It is explained by considering the screening of polarization induced electric field causing a blue shift in case of PL measurements.
{"title":"Optical characterization of InAlN/AlN/InGaN/GaN/sapphire high electron mobility transistor structures","authors":"Payal Taya, V. Singh, D. Jana, R. Tyagi, T. Sharma","doi":"10.1063/1.5113306","DOIUrl":"https://doi.org/10.1063/1.5113306","url":null,"abstract":"Photoluminescence (PL) and Photoluminescence Excitation (PLE) measurements are performed on MOVPE grown InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor Structures. Features associated with InAlN barrier layer, InGaN channel layer and GaN buffer layer are clearly seen in the PL spectra. A blueshift of PL features with excitation intensity is observed which is claimed to be the signature of 2-dimensional electron gas formed in InGaN layer. By comparing the integrated intensity of PL peaks recorded at 7K and room temperature, it is confirmed that the optical quality of InGaN and GaN layers is superior when compared with that of InAlN barrier layer in the HEMT structure. It is also seen that the PLE features of InGaN channel layer are considerably red shifted with respect to PL features of the same layer. It is explained by considering the screening of polarization induced electric field causing a blue shift in case of PL measurements.Photoluminescence (PL) and Photoluminescence Excitation (PLE) measurements are performed on MOVPE grown InAlN/AlN/InGaN/GaN/Sapphire High Electron Mobility Transistor Structures. Features associated with InAlN barrier layer, InGaN channel layer and GaN buffer layer are clearly seen in the PL spectra. A blueshift of PL features with excitation intensity is observed which is claimed to be the signature of 2-dimensional electron gas formed in InGaN layer. By comparing the integrated intensity of PL peaks recorded at 7K and room temperature, it is confirmed that the optical quality of InGaN and GaN layers is superior when compared with that of InAlN barrier layer in the HEMT structure. It is also seen that the PLE features of InGaN channel layer are considerably red shifted with respect to PL features of the same layer. It is explained by considering the screening of polarization induced electric field causing a blue shift in case of PL measurements.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"10 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78322518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.
{"title":"Citrate sol-gel synthesis and luminescent properties of Cr3+-activated strontium gallate phosphor","authors":"Amba Mondal, J. Manam","doi":"10.1063/1.5113032","DOIUrl":"https://doi.org/10.1063/1.5113032","url":null,"abstract":"In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.In the present work, we report the structural and luminescent properties of Cr3+ doped strontium gallate phosphor. The sample was prepared by citric acid assisted sol-gel synthesis method followed by high temperature annealing. The phase of the prepared phosphor has been identified from the XRD pattern. For morphological properties, FESEM image have been taken. The d-d transitions of Cr3+ ion were observed from photoluminescence excitation and emission spectra. Lifetime was calculated from the decay curve. The long lasting phosphorescence was observed from the afterglow decay curve.","PeriodicalId":10874,"journal":{"name":"DAE SOLID STATE PHYSICS SYMPOSIUM 2018","volume":"32 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-07-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81503448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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