Pub Date : 1986-12-31DOI: 10.1515/9783112495483-044
A. L. Vaktanian, A. Kirakosian
{"title":"Calculation of the Charge Carrier Mobility of a Size Quantized Semiconductor Film by the Energy-Loss Method","authors":"A. L. Vaktanian, A. Kirakosian","doi":"10.1515/9783112495483-044","DOIUrl":"https://doi.org/10.1515/9783112495483-044","url":null,"abstract":"","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88647732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112495483-039
S. Asano, Y. Nakao, N. Yamashita, I. Matsuyama
{"title":"Luminescence et transition non radiative 3T1u -> 3A1u dans le luminophore BaS:Bi 3+","authors":"S. Asano, Y. Nakao, N. Yamashita, I. Matsuyama","doi":"10.1515/9783112495483-039","DOIUrl":"https://doi.org/10.1515/9783112495483-039","url":null,"abstract":"","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"18 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79352652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Raman scattering measurements in the tetragonal Cd3As2 single crystals are carried out at temperatures of 300 and 77 K. The spectra obtained are interpreted in terms of phonon-electron and electron-electron interactions. The features in the low-frequency interval are due to contributions from phonon and single particle scattering. The electronic RS involving intra- and interband excitations is dominant at frequencies higher than 80 cm−1. The resonant enhancement of the band at 300 cm−1 arises from the incident light frequency being in the vicinity of ∑1 – ∑4. La diffusion Raman dans les mono-cristaux de Cd3As2 quadratique a ete etudiee a 300 et 77 K. Leg spectres Raman obtenus sont interpretes en termes des interactions un phonon–electron et electron–electron. Des spectres en region de basses frequences sont attribues a la diffusion a un phonon et a une particule. Cependant la diffusion Raman faisant intervenir des excitations electroniques intra- et interbandes est dominant aux frequences au-dessus de 80 cm−1. Une croissance resonante d'une bande a 300 cm−1 resulte du voisinage des energies de raie incidente et un seuil d'excitation ∑1 – ∑4.
{"title":"Some Aspects of Raman Scattering in Cd3As2 Single Crystals","authors":"J. Weszka, M. Renucci, A. Zwick","doi":"10.1002/PSSB.2221330106","DOIUrl":"https://doi.org/10.1002/PSSB.2221330106","url":null,"abstract":"Raman scattering measurements in the tetragonal Cd3As2 single crystals are carried out at temperatures of 300 and 77 K. The spectra obtained are interpreted in terms of phonon-electron and electron-electron interactions. The features in the low-frequency interval are due to contributions from phonon and single particle scattering. The electronic RS involving intra- and interband excitations is dominant at frequencies higher than 80 cm−1. The resonant enhancement of the band at 300 cm−1 arises from the incident light frequency being in the vicinity of ∑1 – ∑4. \u0000 \u0000 \u0000 \u0000La diffusion Raman dans les mono-cristaux de Cd3As2 quadratique a ete etudiee a 300 et 77 K. Leg spectres Raman obtenus sont interpretes en termes des interactions un phonon–electron et electron–electron. Des spectres en region de basses frequences sont attribues a la diffusion a un phonon et a une particule. Cependant la diffusion Raman faisant intervenir des excitations electroniques intra- et interbandes est dominant aux frequences au-dessus de 80 cm−1. Une croissance resonante d'une bande a 300 cm−1 resulte du voisinage des energies de raie incidente et un seuil d'excitation ∑1 – ∑4.","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"20 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81282813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
C. Jayasankar, E. Antic-Fidancev, M. Blaise, P. Porcher
The optical properties of EuF3 and GdF3 are reinvestigated. Crystal field parameters derived from the data by using the D3h C2v descending symmetry procedure for EuF3 are (in cm−1): B = 465, B = 375, B = −232, B = −96, B = −114, B = −490, B = 83, B = −518, B = −162. The temperature dependent paramagnetic susceptibility of EuF3, is calculated by using the simulated wave functions. The calculated and experimental paramagnetic susceptibilities are in very good agreement. Les proprietes optiques de EuF3 et GdF3 ont ete reexaminees. A partir des niveaux observes, les parametres de champ cristallin ont ete determines par la methode de symetrie descendante D3h C2v pour EuF3 les parametres sont: B = 465, B = 375, B = −232, B = −96, B = −114, B = −490, B = 83, B = −518, B = −162 (en cm−1). En outre, l'evolution en fonction de la temperature de la susceptibilite paramagnetique de EuF3 a ete calculee grace aux fonctions d'onde deduites de la simulation. L'accord entre l'experience et le calcul est excellent.
重新研究了EuF3和GdF3的光学性质。利用D3h C2v下降对称法得到的EuF3晶体场参数(单位cm−1)为:B = 465, B = 375, B =−232,B =−96,B =−114,B =−490,B = 83, B =−518,B =−162。利用模拟波函数计算了EuF3的温度随顺磁化率。顺磁化率的计算值与实验值吻合较好。EuF3和GdF3的所有权对复试者无效。一组研究人员观察到，在对称的派生方法D3h - C2v - EuF3中，有两个参数:B = 465, B = 375, B = - 232, B = - 96, B = - 114, B = - 490, B = 83, B = - 518, B = - 162 (en cm - 1)。在此基础上，推导出了EuF3的温度演化函数和磁化顺磁性函数，并计算了EuF3的温度演化函数和磁化顺磁性函数。L'accord中心，L 'experience中心，L' compute中心，优秀。
{"title":"Optical Properties of EuF3 and GdF3 and Paramagnetic Susceptibility of EuF3","authors":"C. Jayasankar, E. Antic-Fidancev, M. Blaise, P. Porcher","doi":"10.1002/PSSB.2221330140","DOIUrl":"https://doi.org/10.1002/PSSB.2221330140","url":null,"abstract":"The optical properties of EuF3 and GdF3 are reinvestigated. Crystal field parameters derived from the data by using the D3h C2v descending symmetry procedure for EuF3 are (in cm−1): B = 465, B = 375, B = −232, B = −96, B = −114, B = −490, B = 83, B = −518, B = −162. The temperature dependent paramagnetic susceptibility of EuF3, is calculated by using the simulated wave functions. The calculated and experimental paramagnetic susceptibilities are in very good agreement. \u0000 \u0000 \u0000 \u0000Les proprietes optiques de EuF3 et GdF3 ont ete reexaminees. A partir des niveaux observes, les parametres de champ cristallin ont ete determines par la methode de symetrie descendante D3h C2v pour EuF3 les parametres sont: B = 465, B = 375, B = −232, B = −96, B = −114, B = −490, B = 83, B = −518, B = −162 (en cm−1). En outre, l'evolution en fonction de la temperature de la susceptibilite paramagnetique de EuF3 a ete calculee grace aux fonctions d'onde deduites de la simulation. L'accord entre l'experience et le calcul est excellent.","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"50 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85868074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112495483-052
A. Pires, S. L. Talim
{"title":"Soliton Excitations in a One-Dimensional 2T Antiferromagnet with Two Anisotropics","authors":"A. Pires, S. L. Talim","doi":"10.1515/9783112495483-052","DOIUrl":"https://doi.org/10.1515/9783112495483-052","url":null,"abstract":"","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"43 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83691007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The structural disorder model, recently proposed by the authors to explain the thermodynamic properties near the transitions of first order, is generalized to include the pressure induced transition in the semiconductors Ge and Si. The calculated values show at least a in order of magnitude agreement with the experimental data. Das kurzlich von den Autoren vorgeschlagene Fehlordnungsmodell zur Erklarung der thermodynamischen Eigenschaften in der Nahe eines Ubergangs erster Ordnung wird verallgemeiner und schliest den druckinduzierten Ubergang in den Halbleitern Ge und Si ein. Die berechneten Werte befinden sich in grosenordnungsmasiger Ubereinstimmung mit den experimentellen Daten.
{"title":"The Structural Disorder Model: Pressure Induced Transitions in the Semiconductors Si and Ge","authors":"P. Dixit, B. A. Vaid, K. Sharma","doi":"10.1002/PSSB.2221330108","DOIUrl":"https://doi.org/10.1002/PSSB.2221330108","url":null,"abstract":"The structural disorder model, recently proposed by the authors to explain the thermodynamic properties near the transitions of first order, is generalized to include the pressure induced transition in the semiconductors Ge and Si. The calculated values show at least a in order of magnitude agreement with the experimental data. \u0000 \u0000 \u0000 \u0000Das kurzlich von den Autoren vorgeschlagene Fehlordnungsmodell zur Erklarung der thermodynamischen Eigenschaften in der Nahe eines Ubergangs erster Ordnung wird verallgemeiner und schliest den druckinduzierten Ubergang in den Halbleitern Ge und Si ein. Die berechneten Werte befinden sich in grosenordnungsmasiger Ubereinstimmung mit den experimentellen Daten.","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"175 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73004162","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of a cubic crystal field on rare-earth ions is calculated and presented in a graphical form representing the individual magnetic moment and Van Vleck susceptibility of the lowest-lying sub-state, for J = 3.5; 4; 4.5; 6; 7.5; 8. This is a practical guide for analyzing the moderate-field part of the magnetization. The results are given for the three principal directions. In order to analyze susceptibility measurements, the calculated Curie constant (or the Van Vleck susceptibility) of the fundamental multiplet is also represented. L'effet d'un champ cristallin cubique sur les ions des terres rares est calcule, et les resultats sont donnes sous forme graphique representant le moment magnetique et la susceptibilite de Van Vleck individuels du sous-etat le plus bas, pour les valeurs de J correspondantes: 3,5; 4; 4,5; 6; 7,5; 8. Ces courbes ont une utilite pratique pour l'analyse des courbes d'aimantation dans des champs moderes. Les resultats sont donnes pour les trois directions principales. Dans le but d'exploiter les mesures de susceptibilite, la constante de Curie (ou la susceptibilite de Van Vleck) du multiplet fondamental est aussi representee.
计算了立方晶体场对稀土离子的影响，并以图形形式表示了最低亚态的磁矩和Van Vleck磁化率，当J = 3.5时;4;4.5;6;7.5;8. 这是分析中磁场部分磁化的实用指南。给出了三个主要方向的结果。为了分析磁化率测量结果，还表示了计算出的基波多重体的居里常数(或Van Vleck磁化率)。L'effet d' unchamp结晶在立方体上的影响，在表面上的影响，在表面上的影响，在表面上的影响，在表面上的影响，在表面上的影响，在表面上的影响，在表面上的影响，在表面上的影响。4;4、5;6;7、5;8. 这两种方法都是实用的，所以我要分析这些方法和方法。没有结果，就没有三个方向原则。Dans le but d'exploiter les measures de, la constant de Curie(或la de Van Vleck) du multiplet basic est aussi代表。
{"title":"Detailed Low-Field Magnetic Properties of Rare-Earth Ion States in Cubic Crystal Fields","authors":"G. Fischer, A. Herb","doi":"10.1002/PSSB.2221330118","DOIUrl":"https://doi.org/10.1002/PSSB.2221330118","url":null,"abstract":"The effect of a cubic crystal field on rare-earth ions is calculated and presented in a graphical form representing the individual magnetic moment and Van Vleck susceptibility of the lowest-lying sub-state, for J = 3.5; 4; 4.5; 6; 7.5; 8. This is a practical guide for analyzing the moderate-field part of the magnetization. The results are given for the three principal directions. In order to analyze susceptibility measurements, the calculated Curie constant (or the Van Vleck susceptibility) of the fundamental multiplet is also represented. \u0000 \u0000 \u0000 \u0000L'effet d'un champ cristallin cubique sur les ions des terres rares est calcule, et les resultats sont donnes sous forme graphique representant le moment magnetique et la susceptibilite de Van Vleck individuels du sous-etat le plus bas, pour les valeurs de J correspondantes: 3,5; 4; 4,5; 6; 7,5; 8. Ces courbes ont une utilite pratique pour l'analyse des courbes d'aimantation dans des champs moderes. Les resultats sont donnes pour les trois directions principales. Dans le but d'exploiter les mesures de susceptibilite, la constante de Curie (ou la susceptibilite de Van Vleck) du multiplet fondamental est aussi representee.","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"72 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81761130","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1986-12-31DOI: 10.1515/9783112495483-062
N. Belevich, L. A. Makovetskaya
{"title":"Semiconductor -Metal Transition and Variable Range Hopping Conductivity in CuInSe2","authors":"N. Belevich, L. A. Makovetskaya","doi":"10.1515/9783112495483-062","DOIUrl":"https://doi.org/10.1515/9783112495483-062","url":null,"abstract":"","PeriodicalId":11087,"journal":{"name":"Day 1 Tue, January 11, 2022","volume":"14 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86876853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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