A. Parisini, P. P. Lottici, C. Razzetti, R. Bacewicz
Resonance effects are observed in the Raman cross-section of the defect chalcopyrite CdGa2Se4. The results indicate a strong resonance of the highest frequency E(LO) sphalerite-like phonons in forbidden geometry, similar to the behaviour observed for zincblende-like crystals. The forbidden scattering may be described through a Prohlich intraband mechanism at the fundamental direct gap.Nous presentons les effets de la resonance sur la section efficace de la diffusion Raman de la chalcopyrite defectueuse CdGa2Se4. Les resultats montrent une forte resonance des phonons E(LO) les plus eleves en frequence dans une geometrie interdite. Cette resonance est comparable a celle observee dans les cristaux du type zinc-blende. La diffusion interdite peut ětre decrite par un processus d.'interaction de type Frohlich, avec I'energie fondamentale du gap direct.
{"title":"Resonance Effects in the Raman Spectrum of CdGa2Se4","authors":"A. Parisini, P. P. Lottici, C. Razzetti, R. Bacewicz","doi":"10.1002/PSSB.2221340110","DOIUrl":"https://doi.org/10.1002/PSSB.2221340110","url":null,"abstract":"Resonance effects are observed in the Raman cross-section of the defect chalcopyrite CdGa2Se4. The results indicate a strong resonance of the highest frequency E(LO) sphalerite-like phonons in forbidden geometry, similar to the behaviour observed for zincblende-like crystals. The forbidden scattering may be described through a Prohlich intraband mechanism at the fundamental direct gap.Nous presentons les effets de la resonance sur la section efficace de la diffusion Raman de la chalcopyrite defectueuse CdGa2Se4. Les resultats montrent une forte resonance des phonons E(LO) les plus eleves en frequence dans une geometrie interdite. Cette resonance est comparable a celle observee dans les cristaux du type zinc-blende. La diffusion interdite peut ětre decrite par un processus d.'interaction de type Frohlich, avec I'energie fondamentale du gap direct.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"29 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89766472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The coefficient of majority carrier capture by a semiconductor surface is calculated in quasi-classical approximation. The carrier localization on the surface is accompanied by multiquantum fluctuational phonon emission. The temperature dependence of the capture coefficient is obtained. [Russian Text Ignored].
{"title":"Capture of Majority Carriers by a Semiconductor Surface","authors":"R. A. Vardanyan, L. B. Khovakimyan","doi":"10.1002/PSSB.2221340138","DOIUrl":"https://doi.org/10.1002/PSSB.2221340138","url":null,"abstract":"The coefficient of majority carrier capture by a semiconductor surface is calculated in quasi-classical approximation. The carrier localization on the surface is accompanied by multiquantum fluctuational phonon emission. The temperature dependence of the capture coefficient is obtained. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored].","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"35 8 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82802177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Positron annihilation parameters with three simplified dislocation core models are calculated. The positron annihilation effect at a dislocation line is mainly contributed by the dislocation core. The positron annihilation effects at pure dislocation lines are large enough to be measurable though they are much weaker than at vacancies. Die Positronenannihilationsparameter werden mit drei vereinfachten Versetzungskernmodellen berechnet. Der Positronenannihilationseffekt an einer Versetzungslinie wird hauptsachlich durch den Versetzungskern beeinflust. Die Positronenannihilationseffekte an reinen Versetzungslinien sind gros genug, um mesbar zu sein, obgleich sie viel schwacher sind als die an Leerstellen.
{"title":"Dislocation Core Models and Their Positron Annihilation Effects","authors":"J. Shen, C. Lung, K. L. Wang","doi":"10.1002/PSSB.2221340112","DOIUrl":"https://doi.org/10.1002/PSSB.2221340112","url":null,"abstract":"Positron annihilation parameters with three simplified dislocation core models are calculated. The positron annihilation effect at a dislocation line is mainly contributed by the dislocation core. The positron annihilation effects at pure dislocation lines are large enough to be measurable though they are much weaker than at vacancies. \u0000 \u0000 \u0000 \u0000Die Positronenannihilationsparameter werden mit drei vereinfachten Versetzungskernmodellen berechnet. Der Positronenannihilationseffekt an einer Versetzungslinie wird hauptsachlich durch den Versetzungskern beeinflust. Die Positronenannihilationseffekte an reinen Versetzungslinien sind gros genug, um mesbar zu sein, obgleich sie viel schwacher sind als die an Leerstellen.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"30 3 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78622387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"On the Influence of the Non-Locality of Exchange and Correlation on the Total Energy and on the Band Gap of Silicon","authors":"H. Wiesner, W. Cordts, J. Monecke","doi":"10.1002/PSSB.2221340164","DOIUrl":"https://doi.org/10.1002/PSSB.2221340164","url":null,"abstract":"","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"135 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74691432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The admittance of n+nn+ semiconductor structures is studied by solving self-consistently the Poisson equation, the continuity equation, and the linearized Boltzmann equation in the relaxation time approximation for a spatially inhomogeneous electron system. Exact numerical results and an approximate, analytical solution are presented. In addition to the normal bulk admittance and the geometric capacitance of the central n region, the equivalent circuit of the structure consists of contact contributions, the magnitude of which depends on the length of the n region L. At low frequencies the effect of the contacts is to induce a conductance Gc, and a capacitance Cc, in parallel with Gc, in the equivalent circuit. On the other hand, above the plasma frequency of the n region the contact admittance vanishes because of the shunting of the capacitive elements. Die Admittanz von n+nn+-Halbleiterstrukturen wird durch selbstkonsistentes Losen der Poisson- gleichung, der Kontinuitatsgleichung und der linearisierten Boltzmanngleichung in der Relaxationszeitnaherung fur ein raumlich inhomogenes Elektronensystem untersucht. Exakte numerische Ergebnisse und eine analytische Naherungslosung werden angegeben. Zusatzlich zur normalen Volumenadmittanz und der geometrischen Kapazitanz des zentralen n-Bereichs, besteht das Ersatzschaltbild aus Kontaktbeitragen, deren Grose von der Lange L des n-Bereichs abhangt. Bei niedrigen Frequenzen besteht der Einflus der Kontakte in der Induzierung eines Leitwerts Ge, und einer Kapazitanz Ce, parallel zu Ge, im Ersatzschaltbild. Andererseits verschwindet die Kontaktadmittanz oberhalb der Plasmafrequenz des n-Bereichs aufgrund der Uberbruckung der kapazitiven Elemente.
{"title":"AC Transport in Short n+nn+ Layers","authors":"J. Sinkkonen, S. Eränen","doi":"10.1002/PSSB.2221340149","DOIUrl":"https://doi.org/10.1002/PSSB.2221340149","url":null,"abstract":"The admittance of n+nn+ semiconductor structures is studied by solving self-consistently the Poisson equation, the continuity equation, and the linearized Boltzmann equation in the relaxation time approximation for a spatially inhomogeneous electron system. Exact numerical results and an approximate, analytical solution are presented. In addition to the normal bulk admittance and the geometric capacitance of the central n region, the equivalent circuit of the structure consists of contact contributions, the magnitude of which depends on the length of the n region L. At low frequencies the effect of the contacts is to induce a conductance Gc, and a capacitance Cc, in parallel with Gc, in the equivalent circuit. On the other hand, above the plasma frequency of the n region the contact admittance vanishes because of the shunting of the capacitive elements. \u0000 \u0000 \u0000 \u0000Die Admittanz von n+nn+-Halbleiterstrukturen wird durch selbstkonsistentes Losen der Poisson- gleichung, der Kontinuitatsgleichung und der linearisierten Boltzmanngleichung in der Relaxationszeitnaherung fur ein raumlich inhomogenes Elektronensystem untersucht. Exakte numerische Ergebnisse und eine analytische Naherungslosung werden angegeben. Zusatzlich zur normalen Volumenadmittanz und der geometrischen Kapazitanz des zentralen n-Bereichs, besteht das Ersatzschaltbild aus Kontaktbeitragen, deren Grose von der Lange L des n-Bereichs abhangt. Bei niedrigen Frequenzen besteht der Einflus der Kontakte in der Induzierung eines Leitwerts Ge, und einer Kapazitanz Ce, parallel zu Ge, im Ersatzschaltbild. Andererseits verschwindet die Kontaktadmittanz oberhalb der Plasmafrequenz des n-Bereichs aufgrund der Uberbruckung der kapazitiven Elemente.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"5 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90153024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Lattice Anharmonicity and Thermal Expansion of Alkali Metals","authors":"T. Soma, H. Kagaya","doi":"10.1002/PSSB.2221340151","DOIUrl":"https://doi.org/10.1002/PSSB.2221340151","url":null,"abstract":"","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84189853","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Z. Wilamowski, B. Oczkiewicz, P. Kacman, J. Blinowski
An EPR absorption in CdF2:Y is investigated as a function of temperature. The shape of the observed derivative absorption line, which is symmetric at low T, becomes asymmetric at higher. The theoretical model of the line-asymmetrydependence on the sample dimensions and conductivity shows a non-monotonic behaviour of the line asymmetry ratio A/B in theregion where the skin depth is comparable to the sample thickness, in agreement with the experimental data. Eine EPR-Absorption in CdF2:Y wird als Funktion der Temperatur untersucht. Die Form der beobachteten Ableitung der Absorptionslinie, die bei niedrigen T asymmetrisch ist, wird bei hoheren T symmetrisch. Das theoretische Model 1 der Abhangigkeit der Linienasymmetrie von den Probendimensionen und der Leitfahigkeit zeigt ein nichtmonotones Verhalten des Linienasymme-trieverhaltnisses A/B in dem Bereich, wo die Skintiefe vergleichbar mit der Probendicke ist, in Ubereinstimmung mit den experimentellen Werten.
在第二张相片中的EPR吸收:Y就是一个人的热力来源。我受够了琳击了基于实验数据的逻辑模型显示了采样度和纠结的非连贯性行为疾病的吸收相片:Y是测试温度的函数。求光轴轴相导在低ph值时是不对称的，在霍赫提出后，其形状变得对称。这个理论模型1 Linienasymmetrie Probendimensionen和会议Abhangigkeit Leitfahigkeit展现出nichtmonotones Linienasymme-trieverhaltnisses A / B的行为不满的领域中,Skintiefe相Probendicke .已往生的实验性的价值
{"title":"Asymmetry of the EPR Absorption Line in CdF2 with Y","authors":"Z. Wilamowski, B. Oczkiewicz, P. Kacman, J. Blinowski","doi":"10.1002/PSSB.2221340137","DOIUrl":"https://doi.org/10.1002/PSSB.2221340137","url":null,"abstract":"An EPR absorption in CdF2:Y is investigated as a function of temperature. The shape of the observed derivative absorption line, which is symmetric at low T, becomes asymmetric at higher. The theoretical model of the line-asymmetrydependence on the sample dimensions and conductivity shows a non-monotonic behaviour of the line asymmetry ratio A/B in theregion where the skin depth is comparable to the sample thickness, in agreement with the experimental data. \u0000 \u0000 \u0000 \u0000Eine EPR-Absorption in CdF2:Y wird als Funktion der Temperatur untersucht. Die Form der beobachteten Ableitung der Absorptionslinie, die bei niedrigen T asymmetrisch ist, wird bei hoheren T symmetrisch. Das theoretische Model 1 der Abhangigkeit der Linienasymmetrie von den Probendimensionen und der Leitfahigkeit zeigt ein nichtmonotones Verhalten des Linienasymme-trieverhaltnisses A/B in dem Bereich, wo die Skintiefe vergleichbar mit der Probendicke ist, in Ubereinstimmung mit den experimentellen Werten.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"417 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79468472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A Modified Bruggeman Theory of Optical Properties for Metal-Isolator Transitions","authors":"M. Arnold, P. Bussemer","doi":"10.1002/PSSB.2221340159","DOIUrl":"https://doi.org/10.1002/PSSB.2221340159","url":null,"abstract":"","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"22 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89933245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Renormalization Group Free Energy for an Ising Ferromagnet on a Simple Cubic Lattice","authors":"W. Reich, H. Cofta","doi":"10.1002/PSSB.2221340156","DOIUrl":"https://doi.org/10.1002/PSSB.2221340156","url":null,"abstract":"","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88949595","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
By means of a simple molecule-theoretic model of “linear superposition of two-electron molecules” the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. Mittels eines einfachen molekultheoretischen Modells der linearen Superposition von Zweielektronenmolekulen werden die Bindungsladungen zwischen nachsten Nachbarn und die effektiven Ladungen der Ionen fur ternare Festkorperlosungen mit Zinkblendestruktur und fur Chalkopyrit-Halbleiter berechnet. Der Ladungstransfer unter den lonen wird berucksichtigt, der durch die Differenz der atomaren Elektronegativitaten verursacht wird, und zwischen den Bindungen, der sich aus dem inneren Streszustand des Gitters erklart. Im Vergleich zu den Werten der entsprechenden binaren Verbindungen wird ein nahezu unveranderter mittlerer Bindungsladungsbetrag gefunden. Diese Tatsache sollte Einflus auf die Nichtzentralkraftwechselwirkung in solchen Halbleitern haben.
用简单的“双电子分子线性叠加”的分子理论模型，计算了锌-闪锌矿三元结构合金和黄铜矿半导体中最近邻间的键荷和离子的有效电荷。考虑到这两个因素，离子之间的电荷转移是由原子的电负性差异引起的，在晶格的内应力产生的键之间，发现合金的平均键电荷量几乎没有变化，但与所使用的二元化合物的各自值相比，局部键电荷参数发生了很大的变化。这一事实应该会影响这种半导体中的非中心力相互作用。mitteles eines einfachen分子理论模型(模型):线性叠加;zweielektronenmolulen叠加;zweielektronenmolulen叠加;zweielektronenmolulen叠加;zwischen nachsten Nachbarn;在电离层下，电离层的转移被称为电离层，电离层的转移被称为电离层，电离层的转移被称为电离层，电离层的转移被称为电离层，电离层的转移被称为电离层。我的意思是，我的意思是我的意思是我的意思是我的意思是我的意思是我的意思是我的意思是我的意思。德国医学局(Diese Tatsache)将德国流感病毒传染给了德国医学局。
{"title":"Bond Charges and Electronic Charge Transfer in Ternary Semiconductors","authors":"U. Pietsch","doi":"10.1002/PSSB.2221340104","DOIUrl":"https://doi.org/10.1002/PSSB.2221340104","url":null,"abstract":"By means of a simple molecule-theoretic model of “linear superposition of two-electron molecules” the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. \u0000 \u0000 \u0000 \u0000Mittels eines einfachen molekultheoretischen Modells der linearen Superposition von Zweielektronenmolekulen werden die Bindungsladungen zwischen nachsten Nachbarn und die effektiven Ladungen der Ionen fur ternare Festkorperlosungen mit Zinkblendestruktur und fur Chalkopyrit-Halbleiter berechnet. Der Ladungstransfer unter den lonen wird berucksichtigt, der durch die Differenz der atomaren Elektronegativitaten verursacht wird, und zwischen den Bindungen, der sich aus dem inneren Streszustand des Gitters erklart. Im Vergleich zu den Werten der entsprechenden binaren Verbindungen wird ein nahezu unveranderter mittlerer Bindungsladungsbetrag gefunden. Diese Tatsache sollte Einflus auf die Nichtzentralkraftwechselwirkung in solchen Halbleitern haben.","PeriodicalId":11113,"journal":{"name":"Day 1 Mon, March 21, 2022","volume":"65 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"1986-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88297310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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