Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.n-6-01
K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka, S. Takagi
{"title":"Accurate evaluation of contact resistivity between InAs/Ni-InAs alloy","authors":"K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka, S. Takagi","doi":"10.7567/ssdm.2019.n-6-01","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-6-01","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123644108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.f-6-03
Y. Yamamoto, O. Skibitzki, M. Schubert, M. Scuderi, F. Reichmann, M. Zöllner, G. Capellini, B. Tillack
In this paper we have deposited structures comprising a stack of 10 periods made of 15 nmthick Ge multi quantum well (MQW) enclosed in 15 nm-thick Si0.2Ge0.8 barrier have been deposited on SiGe virtual substrates (VS) featuring different Ge contents in the 85% 100% Ge range to investigate the influence of heteroepitaxial strain on the Si0.2Ge0.8 and Ge growth. With increasing Ge concentration of the VS, growth rate of the Si0.2Ge0.8 in the MQW increases. Si incorporation into the Si0.2Ge0.8 layer becomes also slightly higher. However, almost no influence of the growth rate is observed for Ge growth in the MQW. We argue that the increased tensile strain promotes the Si reaction at the surface. In the case of the Si0.2Ge0.8 growth on Ge, we observe a smeared interface due to the Ge segregation during the growth. Furthermore, we observe that this interface width increases with increasing Ge concentration of VS. We attribute this observation to the increased segregation of Ge driven by the increased strain energy accumulated in the in the Si0.2Ge0.8 layers. We also observed that the MQW layer “filters-out” threading dislocations formed in the VS.
{"title":"Ge / SiGe Multi Quantum Well Fabrication by Using Reduced Pressure Chemical Vapor Deposition","authors":"Y. Yamamoto, O. Skibitzki, M. Schubert, M. Scuderi, F. Reichmann, M. Zöllner, G. Capellini, B. Tillack","doi":"10.7567/ssdm.2019.f-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-03","url":null,"abstract":"In this paper we have deposited structures comprising a stack of 10 periods made of 15 nmthick Ge multi quantum well (MQW) enclosed in 15 nm-thick Si0.2Ge0.8 barrier have been deposited on SiGe virtual substrates (VS) featuring different Ge contents in the 85% 100% Ge range to investigate the influence of heteroepitaxial strain on the Si0.2Ge0.8 and Ge growth. With increasing Ge concentration of the VS, growth rate of the Si0.2Ge0.8 in the MQW increases. Si incorporation into the Si0.2Ge0.8 layer becomes also slightly higher. However, almost no influence of the growth rate is observed for Ge growth in the MQW. We argue that the increased tensile strain promotes the Si reaction at the surface. In the case of the Si0.2Ge0.8 growth on Ge, we observe a smeared interface due to the Ge segregation during the growth. Furthermore, we observe that this interface width increases with increasing Ge concentration of VS. We attribute this observation to the increased segregation of Ge driven by the increased strain energy accumulated in the in the Si0.2Ge0.8 layers. We also observed that the MQW layer “filters-out” threading dislocations formed in the VS.","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116841364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.n-5-03
P. Alba, J. Aubin, F. Mazzamuto, S. Perrot, S. Kerdilès
{"title":"Solid phase recrystallization induced by nanosecond pulsed laser","authors":"P. Alba, J. Aubin, F. Mazzamuto, S. Perrot, S. Kerdilès","doi":"10.7567/ssdm.2019.n-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130707092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.n-6-06
F. Li, E. Hsieh, C. Chiu, C. Liu, S. Chung, T. Chen, S.A. Huang, T.J. Chen, O. Cheng
{"title":"A New Structure of High-performance Source/drain Coupling Negative-capacitance FET Featuring Excellent Short-channel Controllability and Near Hysteresis-free","authors":"F. Li, E. Hsieh, C. Chiu, C. Liu, S. Chung, T. Chen, S.A. Huang, T.J. Chen, O. Cheng","doi":"10.7567/ssdm.2019.n-6-06","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-6-06","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130761427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.b-6-04
K. Kuruma, Y. Ota, S. Iwamoto, Y. Arakawa
{"title":"Scheme for Coherent Control of Vacuum Rabi Oscillations in a Quantum Dot-Cavity System using Geometric Phases","authors":"K. Kuruma, Y. Ota, S. Iwamoto, Y. Arakawa","doi":"10.7567/ssdm.2019.b-6-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117306976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.f-6-02
X. Gong, C. Xu, T. Sadoh
Effects of introduction of a-Si under-layers on solid-phase crystallization of Sn-doped Ge on insulator have been investigated. By introduction of a-Si under-layers, energy barrier for carriers at grain-boundaries is significantly decreased. As a result, high carrier mobility of 200−300 cm 2 /Vs is realized for thin GeSn films (30−50 nm) grown with a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).
{"title":"High Carrier Mobility Sn-Doped Ge Thin-Films (< 50 nm) on Insulator by Interface-Modulated Solid-Phase Crystallization at Low-Temperature","authors":"X. Gong, C. Xu, T. Sadoh","doi":"10.7567/ssdm.2019.f-6-02","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-6-02","url":null,"abstract":"Effects of introduction of a-Si under-layers on solid-phase crystallization of Sn-doped Ge on insulator have been investigated. By introduction of a-Si under-layers, energy barrier for carriers at grain-boundaries is significantly decreased. As a result, high carrier mobility of 200−300 cm 2 /Vs is realized for thin GeSn films (30−50 nm) grown with a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131826470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.f-5-05
N. Kokubo, S. Inotsume, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa, T. Ujihara
{"title":"Analysis of Inclined Threading Dislocation from GaN [0001] by Raman mapping","authors":"N. Kokubo, S. Inotsume, Y. Tsunooka, F. Fujie, J. Ohara, S. Onda, H. Yamada, M. Shimizu, S. Harada, M. Tagawa, T. Ujihara","doi":"10.7567/ssdm.2019.f-5-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.f-5-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121771348","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.b-6-03
R. Iida, W. Muranaga, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki
{"title":"Characteristics of GaN-based VCSELs with conducting AlInN/GaN DBR","authors":"R. Iida, W. Muranaga, S. Iwayama, T. Takeuchi, S. Kamiyama, M. Iwaya, I. Akasaki","doi":"10.7567/ssdm.2019.b-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.b-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116068827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.e-6-03
R. Thompson, J. Ryu, Y. Du, S. Karube, M. Kohda, J. Nitta
{"title":"Current Direction-dependent Spin Hall Magnetoresistance in Epitaxial Pt/Co Bilayers on MgO (110)","authors":"R. Thompson, J. Ryu, Y. Du, S. Karube, M. Kohda, J. Nitta","doi":"10.7567/ssdm.2019.e-6-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.e-6-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"21 9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125779114","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-09-05DOI: 10.7567/ssdm.2019.c-5-03
T. Aihara, T. Tayagaki, R. Oshima, Y. Shoji, K. Makita, T. Sugaya
{"title":"Characterization of subcell open-circuit voltages in InGaP/GaAs tandem solar cells fabricated using hydride vapor phase epitaxy","authors":"T. Aihara, T. Tayagaki, R. Oshima, Y. Shoji, K. Makita, T. Sugaya","doi":"10.7567/ssdm.2019.c-5-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.c-5-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134182190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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