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Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials最新文献

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388 K High Temperature Retention Study of 2D Hetero-stack Based Non-Volatile Memory 二维异质堆叠非易失性存储器388k高温保留研究
T. Sasaki, T. Taniguchi, K. Watanabe, K. Nagashio
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引用次数: 0
Co-porphyrin–functionalized CVD graphene ammonia sensor with high selectivity to hydrogen. 对氢具有高选择性的共卟啉功能化CVD石墨烯氨传感器。
K. Sawada, T. Tanaka, T. Yokoyama, R. Yamachi, Y. Oka, Y. Chiba, H. Masai, J. Terao, K. Uchida
{"title":"Co-porphyrin–functionalized CVD graphene ammonia sensor with high selectivity to hydrogen.","authors":"K. Sawada, T. Tanaka, T. Yokoyama, R. Yamachi, Y. Oka, Y. Chiba, H. Masai, J. Terao, K. Uchida","doi":"10.7567/ssdm.2019.a-5-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.a-5-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127263255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements 利用光电测量表征Ni/GaN(0001)界面
K. Watanabe, A. Ohta, N. Taoka, H. Yamada, M. Ikeda, K. Makihara, M. Shimizu, S. Miyazaki
{"title":"Characterization of Ni/GaN(0001) Interfaces by Photoemission Measurements","authors":"K. Watanabe, A. Ohta, N. Taoka, H. Yamada, M. Ikeda, K. Makihara, M. Shimizu, S. Miyazaki","doi":"10.7567/ssdm.2019.k-7-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.k-7-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117045169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of Transparent Cu2O Solar Cells for High-efficiency, Low-cost Tandem Photovoltaics 用于高效、低成本串联光伏发电的透明Cu2O太阳能电池研究
N. Nakagawa, S. Shibasaki, M. Yamazaki, Y. Honishi, Y. Someya-Hiraoka, K. Yamamoto
{"title":"Study of Transparent Cu2O Solar Cells for High-efficiency, Low-cost Tandem Photovoltaics","authors":"N. Nakagawa, S. Shibasaki, M. Yamazaki, Y. Honishi, Y. Someya-Hiraoka, K. Yamamoto","doi":"10.7567/ssdm.2019.ps-6-22","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-6-22","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122133113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An Inductively Coupled Wireless Bus for Inter-Chiplet Communication 一种用于芯片间通信的电感耦合无线总线
J. Kadomoto, S. Mitsuno, H. Irie, S. Sakai
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引用次数: 0
3D SoC Design with TSV-less Power Supply Employing Highly Doped Silicon Via 采用高掺杂硅通孔的无tsv电源的3D SoC设计
K. Shiba, M. Hamada, T. Kuroda
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引用次数: 1
ZrO2 Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications 用于非易失性存储器和模拟突触的ZrO2反铁电场效应晶体管
H. Liu, S. Zheng, G. Han, Y. Xu, Y. Liu, C. Wang, X. Wang, N. Yang, N. Zhong, Y. Hao
{"title":"ZrO2 Anti-Ferroelectric Field Effect Transistor for Non-volatile Memory and Analog Synapse Applications","authors":"H. Liu, S. Zheng, G. Han, Y. Xu, Y. Liu, C. Wang, X. Wang, N. Yang, N. Zhong, Y. Hao","doi":"10.7567/ssdm.2019.h-3-04","DOIUrl":"https://doi.org/10.7567/ssdm.2019.h-3-04","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129147001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Two Phase Change Memory (2-PCM) Neuron for Implementation of Backpropagation Algorithm 实现反向传播算法的2-PCM神经元
C. Li, J. An, Y. Song
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引用次数: 0
Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap 单电荷阱诱导非对称双间隔栅硅纳米线mosfet的特性变异性和随机电报噪声
S. Kola, Y. Li, N. Thoti, C.-Y. Chen, W. Sung
{"title":"Characteristic Variability and Random Telegraph Noise of Gate-All-Around Silicon Nanowire MOSFETs with Asymmetric Dual Spacer Induced by Single Charge Trap","authors":"S. Kola, Y. Li, N. Thoti, C.-Y. Chen, W. Sung","doi":"10.7567/ssdm.2019.ps-1-05","DOIUrl":"https://doi.org/10.7567/ssdm.2019.ps-1-05","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132524421","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process 氢离子注入剂量对Smart-cut工艺制备(100)和(111)Ge-on-insulator衬底电学和物理性能的影响
Cheol-Min Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka, S. Takagi
{"title":"Effects of hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process","authors":"Cheol-Min Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka, S. Takagi","doi":"10.7567/ssdm.2019.n-4-03","DOIUrl":"https://doi.org/10.7567/ssdm.2019.n-4-03","url":null,"abstract":"","PeriodicalId":117226,"journal":{"name":"Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-09-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130292521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials
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