Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129862
S. Seki, N. Kanmuri, S. Yuki
Advanced RF circuits for a mobile radio unit are presented. A new compact mobile radio unit has been successfully developed having an 800MHz frequency synthesizer, a thick-film MIC up to 900MHz frequency region and a SAW device. The size and weight of this unit are 1,500 cm/sup 3/ and 2.4 kg. respectively. and it possesses 1,000 radio channels.
{"title":"Advanced RF Circuit Miniaturization for 800 MHz Land Mobile Radio Unit","authors":"S. Seki, N. Kanmuri, S. Yuki","doi":"10.1109/MWSYM.1981.1129862","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129862","url":null,"abstract":"Advanced RF circuits for a mobile radio unit are presented. A new compact mobile radio unit has been successfully developed having an 800MHz frequency synthesizer, a thick-film MIC up to 900MHz frequency region and a SAW device. The size and weight of this unit are 1,500 cm/sup 3/ and 2.4 kg. respectively. and it possesses 1,000 radio channels.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125595121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129803
G. Lindgren
The design and evaluation of an open dielectric waveguide 3 dB coupler with web registration is described. The design includes the selection of waveguide permittivity, size and shape. This design achieved 3 percent bandwidth with 0.7 dB insertion loss, and greater than 22 dB isolation.
{"title":"Coupler Design in Open Dielectric Waveguide with Web Registration","authors":"G. Lindgren","doi":"10.1109/MWSYM.1981.1129803","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129803","url":null,"abstract":"The design and evaluation of an open dielectric waveguide 3 dB coupler with web registration is described. The design includes the selection of waveguide permittivity, size and shape. This design achieved 3 percent bandwidth with 0.7 dB insertion loss, and greater than 22 dB isolation.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130091774","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129860
K. Sekido
This paper reviews recent progress and development status of microwave semiconductor devices in Japan. Since in Japan, major development efforts have been concentrated to the GaAs MESFET devices developments, the paper provides particular emphasis to the introduction of GaAs MESFET device progress in Japan. Progress status in other semiconductor device area is also reviewed briefly.
{"title":"Progress of Microwave Semiconductor Devices in Japan","authors":"K. Sekido","doi":"10.1109/MWSYM.1981.1129860","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129860","url":null,"abstract":"This paper reviews recent progress and development status of microwave semiconductor devices in Japan. Since in Japan, major development efforts have been concentrated to the GaAs MESFET devices developments, the paper provides particular emphasis to the introduction of GaAs MESFET device progress in Japan. Progress status in other semiconductor device area is also reviewed briefly.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127271742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129910
S. Moghe, R. Gray, W. Tsai
A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.
提出了一种适用于多倍频宽场效应管放大器的准集总元阻抗匹配技术。集总元件由并联电容器、高阻抗带线和蚀刻线在0.170 x 0.085 x 0.010英寸的氧化铝基板上实现。用这种方法构造了一个两级放大器，在1.75至6.0 GHz频段产生17/spl plusmn/ dB增益和3.5 dB最大噪声系数。
{"title":"A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks","authors":"S. Moghe, R. Gray, W. Tsai","doi":"10.1109/MWSYM.1981.1129910","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129910","url":null,"abstract":"A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128827430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129838
C. Hu, A. Denning
This paper describes a W-band, fixed tuned receiver that achieves double side-band noise figure less than 5.5 dB over 10 GHz bandwidth for both LO and RF ports. This low DSB noise figure includes a 1.6 dB contribution from an amplifier with 1000 MHz bandwidth. Only three milliwatts of LO power, obtained through a broadband frequency doubler, are required for receiver's optimum performance without biasing the mixer diodes.
{"title":"A Broad-Band, Low-Noise Receiver at W-Band","authors":"C. Hu, A. Denning","doi":"10.1109/MWSYM.1981.1129838","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129838","url":null,"abstract":"This paper describes a W-band, fixed tuned receiver that achieves double side-band noise figure less than 5.5 dB over 10 GHz bandwidth for both LO and RF ports. This low DSB noise figure includes a 1.6 dB contribution from an amplifier with 1000 MHz bandwidth. Only three milliwatts of LO power, obtained through a broadband frequency doubler, are required for receiver's optimum performance without biasing the mixer diodes.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130455150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129938
C. Nothnick, J. Billing, M. Daniel, T. Adams
An S-band compressive receiver if utilizing an MSW (Magneto-stetic Wave) epitaxial YIG dispersive delay line for broadband spectral analysis is presented. The dispersive line, centered at 2.7 GHz with an 870 GHz bandwidth dispered over 0.2 MSCC allows analysis of a 650 GHz band with 12 MHz resolution.
{"title":"Magnetostatic Wave Compressive Receiver","authors":"C. Nothnick, J. Billing, M. Daniel, T. Adams","doi":"10.1109/MWSYM.1981.1129938","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129938","url":null,"abstract":"An S-band compressive receiver if utilizing an MSW (Magneto-stetic Wave) epitaxial YIG dispersive delay line for broadband spectral analysis is presented. The dispersive line, centered at 2.7 GHz with an 870 GHz bandwidth dispered over 0.2 MSCC allows analysis of a 650 GHz band with 12 MHz resolution.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127997692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129887
S. Patel, H. Goldie
This paper concerns the development of a 100-kW peak power, self-biased, pulsed limiter covering the 1250 to 1350 MHz band. The limiter requires no external power sources and uses four 70 mu m PIN diodes as the active elements in a power-sharing, axially symmetric, shunt-loaded arrangement in a 50-ohm, 7/8-inch OD, coaxial transmission line. Two shorting stubs used for zero-bias tuning and dc returns are in the same electrical plane as the PIN diodes. Four symmetric Schottky-barrier, high-voltage detector diodes decoupled from the main transmission line provide fast leading edge, high-amplitude current biasing pulses to each PIN diode. The one-stage limiter demonstrated a spike leakage of 2.8 kW/65 ns, a flat leakage of 32 watts peak, and a 1-dB recovery period of 17 mu s for an incident power level of 100 kW/2.8 mu s. Passive zero-bias loss was under 0.5 dB.
{"title":"A 100-kW Solid-State Coaxial Limiter for L-Band","authors":"S. Patel, H. Goldie","doi":"10.1109/MWSYM.1981.1129887","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129887","url":null,"abstract":"This paper concerns the development of a 100-kW peak power, self-biased, pulsed limiter covering the 1250 to 1350 MHz band. The limiter requires no external power sources and uses four 70 mu m PIN diodes as the active elements in a power-sharing, axially symmetric, shunt-loaded arrangement in a 50-ohm, 7/8-inch OD, coaxial transmission line. Two shorting stubs used for zero-bias tuning and dc returns are in the same electrical plane as the PIN diodes. Four symmetric Schottky-barrier, high-voltage detector diodes decoupled from the main transmission line provide fast leading edge, high-amplitude current biasing pulses to each PIN diode. The one-stage limiter demonstrated a spike leakage of 2.8 kW/65 ns, a flat leakage of 32 watts peak, and a 1-dB recovery period of 17 mu s for an incident power level of 100 kW/2.8 mu s. Passive zero-bias loss was under 0.5 dB.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121086940","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129924
K. Niclas, W. Wilser
A 2-12 GHz monolithic feedback amplifier has been designed. Initial experiments, made on a semi-monolithic unit, yielded 5.4 dB of minimum gain from 2-12 GHz and 3.8 dB of minimum gain between 2 and 15.3 GHz.
{"title":"A 2-12 Ghz Feedback Amplifier on GaAs","authors":"K. Niclas, W. Wilser","doi":"10.1109/MWSYM.1981.1129924","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129924","url":null,"abstract":"A 2-12 GHz monolithic feedback amplifier has been designed. Initial experiments, made on a semi-monolithic unit, yielded 5.4 dB of minimum gain from 2-12 GHz and 3.8 dB of minimum gain between 2 and 15.3 GHz.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"151 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117344310","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129856
P. Guillon, J. P. Balabaud, Y. Garault
The electric dipole resonance of a cylindrical and a tubular dielectric resonator is investigated. Data are given about the resonant frequencies and the structure of the field surrounding the resonator. The data agree well with experimental results.
{"title":"TM/sub 01p/ Tubular and Cylindrical Dielectric Resonator Mode","authors":"P. Guillon, J. P. Balabaud, Y. Garault","doi":"10.1109/MWSYM.1981.1129856","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129856","url":null,"abstract":"The electric dipole resonance of a cylindrical and a tubular dielectric resonator is investigated. Data are given about the resonant frequencies and the structure of the field surrounding the resonator. The data agree well with experimental results.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125364742","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129822
D. Griffin
A novel microwave bridge incorporating fundamental and harmonic balancing has been developed for measuring amplitude and phase characteristics of items, such as phased array antenna amplifiers, that exhibit small but significant nonlinear behaviour. Measured characteristics relate to the output traveling waves from the item which may, however, be terminated in any safe load. Successful bridge design and operation in a fundamental range of 2 to 4 GHz, a second harmonic range 4 to 8 GHz and a third harmonic range 6 to 12 GHz has been achieved. Sensitivity and resolution are such that it is possible to differentiate between leading and trailing edge phase characteristics of pulse operated microwave amplifiers. Results obtained with various load impedances can be used to plot equi-amplitude and equi-phase contours on a Smith chart at fundamental and harmonic frequencies.
{"title":"A Novel Harmonic Balancing Bridge for Characterizing Microwave Modules for Phased Array Antenna Service","authors":"D. Griffin","doi":"10.1109/MWSYM.1981.1129822","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129822","url":null,"abstract":"A novel microwave bridge incorporating fundamental and harmonic balancing has been developed for measuring amplitude and phase characteristics of items, such as phased array antenna amplifiers, that exhibit small but significant nonlinear behaviour. Measured characteristics relate to the output traveling waves from the item which may, however, be terminated in any safe load. Successful bridge design and operation in a fundamental range of 2 to 4 GHz, a second harmonic range 4 to 8 GHz and a third harmonic range 6 to 12 GHz has been achieved. Sensitivity and resolution are such that it is possible to differentiate between leading and trailing edge phase characteristics of pulse operated microwave amplifiers. Results obtained with various load impedances can be used to plot equi-amplitude and equi-phase contours on a Smith chart at fundamental and harmonic frequencies.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126730649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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