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1981 IEEE MTT-S International Microwave Symposium Digest最新文献

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Cooled Low Noise GaAs Monolithic Mixers at 110 GHz 110ghz制冷低噪声GaAs单片混频器
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129955
B. Clifton, G. D. Alley, R. A. Murphy, W. J. Piacentini, I.H. Mroczkowski, W. Macropoulos
We describe the fabrication and testing of GaAs monolithic integrated circuit mixers which have liquid nitrogen double sideband (DSB) mixer noise temperatures in the range 50-200 K and conversion losses of 4.0-5.0 dB.
我们描述了液氮双边带(DSB)混频器噪声温度在50-200 K范围内,转换损耗为4.0-5.0 dB的GaAs单片集成电路混频器的制造和测试。
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引用次数: 3
Design and Operation of an Orotron-A Tunable Source of Coherent Millimeter Wave Radiation Orotron-A相干毫米波辐射可调谐源的设计与运行
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129893
H. Dropkin, R. Leavitt, D. Wortman
Results are given that describe our experimental observations of orotron oscillation and the physical principles which govern the design of this device, a Smith-Purcell free-electron laser for the millimeter and submillimeter wavelength regions.
结果描述了我们的实验观察到的orotron振荡和物理原理,指导该设备的设计,史密斯-珀塞尔自由电子激光器的毫米波和亚毫米波区域。
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引用次数: 0
Balanced Dual Gate GaAs FET Frequency Doublers 平衡双栅GaAs FET倍频器
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129849
R. Stancliff
A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.
提出了一种用于宽带微波发电的新技术:平衡双栅MESFET倍频器。介绍了18-26.5 GHz和4-23 GHz倍频器的设计和结果。
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引用次数: 23
Highly Reliable Low-Noise MM-Wave Mixers with Whisker-Contacted Honeycomb Diodes 高可靠的低噪声毫米波混频器与须接触蜂窝二极管
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129958
J. Schroth
Single ended mixers at 94 GHz and 140 GHz with whisker-contacted honeycomb diodes have been realized. Environmental tests showed that the split block mixermount construction withstands shocks up to 1000 g/2 ms. Commercially available Mott-diodes have been used to obtain noise temperatures of 600/spl deg/K (SSB) at 94 GHz and 250 uW L.O. drive.
采用晶须接触蜂窝二极管的94 GHz和140 GHz单端混频器已经实现。环境测试表明,分体式混合器安装结构可承受高达1000g / 2ms的冲击。市售的mott二极管已用于在94 GHz和250 uW L.O.驱动下获得600/spl度/K (SSB)的噪声温度。
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引用次数: 0
The Integrated Optic Spectrum Analyzer -- a First Demonstration 集成光谱分析仪——首次演示
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129981
T. Ranganath, T. Joseph, J.Y. Lee
This paper reports on the performance of the first fully Integrated Optical Spectrum Analyzer consisting of a GaAlAs semiconductor laser, a LiNb0/sub 3/ integrated optic chip, and a Si detector/CCD linear array,
本文报道了第一台由GaAlAs半导体激光器、LiNb0/sub 3/集成光学芯片和Si探测器/CCD线性阵列组成的全集成光谱分析仪的性能。
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引用次数: 2
Beam Steering Antenna Control Technique 波束转向天线控制技术
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129948
A.R. Skatvold
A technique which reduces the requirement for constructing high accuracy phase shifters for steering the main beam in a small (less than 20 elements) linear antenna array is described. The key hardware components are the phase detectors which monitor the phase difference between adjacent radiating elements and a microcomputer to read the phase differences and adjust phase shifters to obtain the desired antenna performance. This closed loop technique will also provide a means for future investigations to verify theoretical versus experimental phase distributions and other element effects in small antenna arrays.
本文描述了一种在小型(小于20元)线性天线阵中减少对高精度移相器的要求的技术。关键的硬件部件是监测相邻辐射元件之间相位差的鉴相器和读取相位差并调整移相器以获得所需天线性能的微型计算机。这种闭环技术也将为未来的研究提供一种手段,以验证小型天线阵列中理论与实验的相位分布和其他元素的影响。
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引用次数: 2
Sub-Half-Micron GaAs FETS for Applications Through K Band 用于K波段应用的亚半微米GaAs fet
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129808
C. Huang, A. Herbig, R. Anderson
Sub-half -micron gate GaAs FETs fabricated on high quality VPE buffer material have achieved state-of-the-art low noise perforances. Best noise figures of 0.58 dB at 4 GHz and 1.29 dB at 12 GHz have been observed. Power added efficiency of 35% at Ku band is also reported.
在高质量VPE缓冲材料上制备的亚半微米栅极GaAs场效应管达到了最先进的低噪声性能。在4 GHz和12 GHz的最佳噪声系数分别为0.58 dB和1.29 dB。在Ku波段的功率增加效率为35%。
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引用次数: 11
Coupled-Mode Theory Analysis of Distributed Nonreciprocal Devices 分布式非互易器件的耦合模理论分析
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129898
I. Awai, T. Itoh
A coupled dielectric-ferrite waveguide is analyzed by a coupled-mode theory, and numerical studies are performed for designing new distributed nonreciprocal devices for millimeter-waves. A number of practical considerations are included.
利用耦合模理论对介电-铁氧体耦合波导进行了分析,并对设计新型毫米波分布非互易器件进行了数值研究。其中包括一些实际的考虑。
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引用次数: 2
Analysis of Single and Coupled Striplines with Anisotropic Substrates 各向异性衬底单条和耦合带状线的分析
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129828
A. D’assunção, D. Rogers
The characteristic impedances and the normalized phase velocities of single and parallel-coupled striplines using anisotropic substrates were obtained by means of an integral-equation approach and a mapping method. A quasi-TEM approximation based on Laplace's equation was used. Calculated values for sapphire and pyrolytic boron nitride are given.
采用积分方程法和映射法,得到了各向异性衬底下单、并联耦合带状线的特征阻抗和归一化相速度。采用基于拉普拉斯方程的准瞬变电磁法近似。给出了蓝宝石和热解型氮化硼的计算值。
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引用次数: 6
Design of Filters with Ideal Amplitude and Any Prescribed Phase 具有理想振幅和任意规定相位的滤波器的设计
Pub Date : 1981-06-15 DOI: 10.1109/MWSYM.1981.1129870
S. A. Mohammed
The transfer function of a lowpass non-minimum-phase network with characteristics approximating a constant passband amplitude and any prescribed phase can be expressed in a closed form. This procedure can be used to approximate pre-distorted lowpass characteristics such that application of non-linear frequency transformation produces the desired bandpass ones. Network synthesis leads to a lowpass cross-coupled structure with diagonal cross-couplings. The method is used to design a six-cavity waveguide filter with linear phase characteristic.
具有近似恒定通带振幅和任意规定相位的低通非最小相位网络的传递函数可以用封闭形式表示。这个过程可以用来近似预失真的低通特性,使非线性频率变换的应用产生所需的带通特性。网络综合导致具有对角交叉耦合的低通交叉耦合结构。利用该方法设计了一个具有线性相位特性的六腔波导滤波器。
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引用次数: 1
期刊
1981 IEEE MTT-S International Microwave Symposium Digest
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