Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129958
J. Schroth
Single ended mixers at 94 GHz and 140 GHz with whisker-contacted honeycomb diodes have been realized. Environmental tests showed that the split block mixermount construction withstands shocks up to 1000 g/2 ms. Commercially available Mott-diodes have been used to obtain noise temperatures of 600/spl deg/K (SSB) at 94 GHz and 250 uW L.O. drive.
{"title":"Highly Reliable Low-Noise MM-Wave Mixers with Whisker-Contacted Honeycomb Diodes","authors":"J. Schroth","doi":"10.1109/MWSYM.1981.1129958","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129958","url":null,"abstract":"Single ended mixers at 94 GHz and 140 GHz with whisker-contacted honeycomb diodes have been realized. Environmental tests showed that the split block mixermount construction withstands shocks up to 1000 g/2 ms. Commercially available Mott-diodes have been used to obtain noise temperatures of 600/spl deg/K (SSB) at 94 GHz and 250 uW L.O. drive.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130295615","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129905
D. Kajfez, S. Bokka, C.E. Smith
A design procedure is described for dc blocks using asymmetric coupled microstrip which exhibit a rippled frequency response, while at the same time acting as impedance transformers. Lumped capacitances are added in order to compensate for the difference in propagation constants of two quasi TEM modes.
{"title":"Asymmetric Microstrip DC Blocks with Rippled Response","authors":"D. Kajfez, S. Bokka, C.E. Smith","doi":"10.1109/MWSYM.1981.1129905","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129905","url":null,"abstract":"A design procedure is described for dc blocks using asymmetric coupled microstrip which exhibit a rippled frequency response, while at the same time acting as impedance transformers. Lumped capacitances are added in order to compensate for the difference in propagation constants of two quasi TEM modes.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130229274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129955
B. Clifton, G. D. Alley, R. A. Murphy, W. J. Piacentini, I.H. Mroczkowski, W. Macropoulos
We describe the fabrication and testing of GaAs monolithic integrated circuit mixers which have liquid nitrogen double sideband (DSB) mixer noise temperatures in the range 50-200 K and conversion losses of 4.0-5.0 dB.
{"title":"Cooled Low Noise GaAs Monolithic Mixers at 110 GHz","authors":"B. Clifton, G. D. Alley, R. A. Murphy, W. J. Piacentini, I.H. Mroczkowski, W. Macropoulos","doi":"10.1109/MWSYM.1981.1129955","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129955","url":null,"abstract":"We describe the fabrication and testing of GaAs monolithic integrated circuit mixers which have liquid nitrogen double sideband (DSB) mixer noise temperatures in the range 50-200 K and conversion losses of 4.0-5.0 dB.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121063503","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129844
V. Sokolov, R. Bennett
Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.
{"title":"A 4.5 W, 26 dB Gain FET Power Amplifier at Ku-Band","authors":"V. Sokolov, R. Bennett","doi":"10.1109/MWSYM.1981.1129844","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129844","url":null,"abstract":"Recent results are presented in the development of multi-stage GaAs FET power amplifiers operating in the 12 to 16 GHz frequency band. Microstrip circuit level power combining is used to achieve 4.5 W output power with 26 dB gain at 13.3 GHz with an efficiency of 15.8%, and a 1 dB bandwidth of 1.7 GHz.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"480 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123004028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129849
R. Stancliff
A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.
{"title":"Balanced Dual Gate GaAs FET Frequency Doublers","authors":"R. Stancliff","doi":"10.1109/MWSYM.1981.1129849","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129849","url":null,"abstract":"A new technique for broadband microwave power generation is presented: The balanced dual gate MESFET frequency doubler. Design and results for 18-26.5 GHz and 4-23 GHz doublers are presented.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132816447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129948
A.R. Skatvold
A technique which reduces the requirement for constructing high accuracy phase shifters for steering the main beam in a small (less than 20 elements) linear antenna array is described. The key hardware components are the phase detectors which monitor the phase difference between adjacent radiating elements and a microcomputer to read the phase differences and adjust phase shifters to obtain the desired antenna performance. This closed loop technique will also provide a means for future investigations to verify theoretical versus experimental phase distributions and other element effects in small antenna arrays.
{"title":"Beam Steering Antenna Control Technique","authors":"A.R. Skatvold","doi":"10.1109/MWSYM.1981.1129948","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129948","url":null,"abstract":"A technique which reduces the requirement for constructing high accuracy phase shifters for steering the main beam in a small (less than 20 elements) linear antenna array is described. The key hardware components are the phase detectors which monitor the phase difference between adjacent radiating elements and a microcomputer to read the phase differences and adjust phase shifters to obtain the desired antenna performance. This closed loop technique will also provide a means for future investigations to verify theoretical versus experimental phase distributions and other element effects in small antenna arrays.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123036203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129808
C. Huang, A. Herbig, R. Anderson
Sub-half -micron gate GaAs FETs fabricated on high quality VPE buffer material have achieved state-of-the-art low noise perforances. Best noise figures of 0.58 dB at 4 GHz and 1.29 dB at 12 GHz have been observed. Power added efficiency of 35% at Ku band is also reported.
{"title":"Sub-Half-Micron GaAs FETS for Applications Through K Band","authors":"C. Huang, A. Herbig, R. Anderson","doi":"10.1109/MWSYM.1981.1129808","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129808","url":null,"abstract":"Sub-half -micron gate GaAs FETs fabricated on high quality VPE buffer material have achieved state-of-the-art low noise perforances. Best noise figures of 0.58 dB at 4 GHz and 1.29 dB at 12 GHz have been observed. Power added efficiency of 35% at Ku band is also reported.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128773903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129898
I. Awai, T. Itoh
A coupled dielectric-ferrite waveguide is analyzed by a coupled-mode theory, and numerical studies are performed for designing new distributed nonreciprocal devices for millimeter-waves. A number of practical considerations are included.
{"title":"Coupled-Mode Theory Analysis of Distributed Nonreciprocal Devices","authors":"I. Awai, T. Itoh","doi":"10.1109/MWSYM.1981.1129898","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129898","url":null,"abstract":"A coupled dielectric-ferrite waveguide is analyzed by a coupled-mode theory, and numerical studies are performed for designing new distributed nonreciprocal devices for millimeter-waves. A number of practical considerations are included.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"28 Sup9a 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115264125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129828
A. D’assunção, D. Rogers
The characteristic impedances and the normalized phase velocities of single and parallel-coupled striplines using anisotropic substrates were obtained by means of an integral-equation approach and a mapping method. A quasi-TEM approximation based on Laplace's equation was used. Calculated values for sapphire and pyrolytic boron nitride are given.
{"title":"Analysis of Single and Coupled Striplines with Anisotropic Substrates","authors":"A. D’assunção, D. Rogers","doi":"10.1109/MWSYM.1981.1129828","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129828","url":null,"abstract":"The characteristic impedances and the normalized phase velocities of single and parallel-coupled striplines using anisotropic substrates were obtained by means of an integral-equation approach and a mapping method. A quasi-TEM approximation based on Laplace's equation was used. Calculated values for sapphire and pyrolytic boron nitride are given.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"113 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114553046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129870
S. A. Mohammed
The transfer function of a lowpass non-minimum-phase network with characteristics approximating a constant passband amplitude and any prescribed phase can be expressed in a closed form. This procedure can be used to approximate pre-distorted lowpass characteristics such that application of non-linear frequency transformation produces the desired bandpass ones. Network synthesis leads to a lowpass cross-coupled structure with diagonal cross-couplings. The method is used to design a six-cavity waveguide filter with linear phase characteristic.
{"title":"Design of Filters with Ideal Amplitude and Any Prescribed Phase","authors":"S. A. Mohammed","doi":"10.1109/MWSYM.1981.1129870","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129870","url":null,"abstract":"The transfer function of a lowpass non-minimum-phase network with characteristics approximating a constant passband amplitude and any prescribed phase can be expressed in a closed form. This procedure can be used to approximate pre-distorted lowpass characteristics such that application of non-linear frequency transformation produces the desired bandpass ones. Network synthesis leads to a lowpass cross-coupled structure with diagonal cross-couplings. The method is used to design a six-cavity waveguide filter with linear phase characteristic.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115338659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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