Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129848
J. Obregon, R. Funck, S. Barvet
Decade bandwidth FET functions have been designed, using an analytical approach followed by a computer optimization. Two experimental functions have been built using commercially available FETS : - a YIG tuned oscillator monotonically tunable from 2 to 20 GHz with 1 mW minimum output power. - an ultrabroadband amplifier covering the frequency range from 150 MHz to 16 GHz with 12 dB flat gain and a V.S.W.R lower than 2.5.
{"title":"Decade Bandwidth FET Functions","authors":"J. Obregon, R. Funck, S. Barvet","doi":"10.1109/MWSYM.1981.1129848","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129848","url":null,"abstract":"Decade bandwidth FET functions have been designed, using an analytical approach followed by a computer optimization. Two experimental functions have been built using commercially available FETS : - a YIG tuned oscillator monotonically tunable from 2 to 20 GHz with 1 mW minimum output power. - an ultrabroadband amplifier covering the frequency range from 150 MHz to 16 GHz with 12 dB flat gain and a V.S.W.R lower than 2.5.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115847170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129861
H. Komizo, Y. Tokumitsu
This paper describes a compact, low cost 50 GHz-band integrated doppler radar module for an automobile ground speed sensor in which a copper embedded Fine Grained Alumina (FGA) substrate is successfully used for good heat-sinking and grounding. Results of an initial study on oscillator stabilization by a dielectric resonator in the millimeterwave region is also described.
{"title":"Millimeterwave Integrated Circuits","authors":"H. Komizo, Y. Tokumitsu","doi":"10.1109/MWSYM.1981.1129861","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129861","url":null,"abstract":"This paper describes a compact, low cost 50 GHz-band integrated doppler radar module for an automobile ground speed sensor in which a copper embedded Fine Grained Alumina (FGA) substrate is successfully used for good heat-sinking and grounding. Results of an initial study on oscillator stabilization by a dielectric resonator in the millimeterwave region is also described.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"136 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124247138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129879
B. Bates, P. Khan
The Kurokawa oscillator theory is applied to IMPATT oscillator circuits using an accurate non-linear diode equivalent circuit and broadband circuit representations of both rectangular and coaxial waveguiding structures. The analysis considers the influence of harmonic components in the oscillator output.
{"title":"Analysis of Waveguide IMPATT Oscillator Circuits","authors":"B. Bates, P. Khan","doi":"10.1109/MWSYM.1981.1129879","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129879","url":null,"abstract":"The Kurokawa oscillator theory is applied to IMPATT oscillator circuits using an accurate non-linear diode equivalent circuit and broadband circuit representations of both rectangular and coaxial waveguiding structures. The analysis considers the influence of harmonic components in the oscillator output.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115605586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129845
K. Niclas
Design and fabrication of compact multi-stage single-ended feedback amplifiers operating from 2- 8 GHz are discussed. The nominal gains are 22 dB in the three-stage unit and 30 dB in the four-stage unit. Measured maximum VSWR's do not exceed 1.9:1. Noise figures, although not optimized, were below 7.6 dB and 8.4 dB, respectively.
{"title":"Compact Multi-Stage Single-Ended Amplifiers for S-C Band Operation","authors":"K. Niclas","doi":"10.1109/MWSYM.1981.1129845","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129845","url":null,"abstract":"Design and fabrication of compact multi-stage single-ended feedback amplifiers operating from 2- 8 GHz are discussed. The nominal gains are 22 dB in the three-stage unit and 30 dB in the four-stage unit. Measured maximum VSWR's do not exceed 1.9:1. Noise figures, although not optimized, were below 7.6 dB and 8.4 dB, respectively.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115577106","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129923
W. Petersen, D. R. Decker, A.K. Gupta, J. Dully, D.R. Ch'en
A monolithic GaAs 4-stage broadband amplifier including active input and output matching has been fabricated on a 2.5 mm square chip. Gain, noise, and VSWR performance in the 0.1 to 10 GHz band will be described.
{"title":"A Monolithic GaAs 0.1 to 10 GHz Amplifier","authors":"W. Petersen, D. R. Decker, A.K. Gupta, J. Dully, D.R. Ch'en","doi":"10.1109/MWSYM.1981.1129923","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129923","url":null,"abstract":"A monolithic GaAs 4-stage broadband amplifier including active input and output matching has been fabricated on a 2.5 mm square chip. Gain, noise, and VSWR performance in the 0.1 to 10 GHz band will be described.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124771275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129935
T. Grudkowski, G. K. Montress, M. Gilden, J. F. Black
The application of gallium arsenide (GaAs) technology to high frequency digital and microwave integrated circuits is rapidly maturing. The present work considers the additional capabilities afforded by the inherent piezoelectric properties of GaAs. The emphasis of the work is on Surface Acoustic Wave (SAW) device configurations which may eventually be integrated with electronic circuits on the same substrate. The basic transduction and propagation characteristics for Rayleigh waves on <001>,
{"title":"IC Compatible Saw Devices on GaAs","authors":"T. Grudkowski, G. K. Montress, M. Gilden, J. F. Black","doi":"10.1109/MWSYM.1981.1129935","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129935","url":null,"abstract":"The application of gallium arsenide (GaAs) technology to high frequency digital and microwave integrated circuits is rapidly maturing. The present work considers the additional capabilities afforded by the inherent piezoelectric properties of GaAs. The emphasis of the work is on Surface Acoustic Wave (SAW) device configurations which may eventually be integrated with electronic circuits on the same substrate. The basic transduction and propagation characteristics for Rayleigh waves on <001>,","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"449 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123455938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129979
R. Speciale
Recent theoretical investigations reveal the dominant role played by a new type of matrix transformation in the theory of microwave networks composed of multiport elements; this is an extension to multidimensional vector spaces of the well-known scalar fractional bilinear transformations. Projective matrix transformations have been found to map the scattering matrix, the impedance matrix, and the admittance matrix of an n-port network embedded in a 2n-port supernetwork. The transfer-scattering matrix and the chain- or ABCD-matrix of a 2n-port network embedded in a 4n-port supernetwork, are also mapped in a similar manner by matrix transformations of the same type. A fundamental application of this new transformation is the generalization of the concept of image-parameters known for 2-port networks to that of image-matrices for 2n-port networks. This generalization leads to a rigorous normal-mode analysis of wave-propagation on image-matched chains of cascaded 2n-port networks.
{"title":"Projective Matrix Transformations in Microwave Network Theory","authors":"R. Speciale","doi":"10.1109/MWSYM.1981.1129979","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129979","url":null,"abstract":"Recent theoretical investigations reveal the dominant role played by a new type of matrix transformation in the theory of microwave networks composed of multiport elements; this is an extension to multidimensional vector spaces of the well-known scalar fractional bilinear transformations. Projective matrix transformations have been found to map the scattering matrix, the impedance matrix, and the admittance matrix of an n-port network embedded in a 2n-port supernetwork. The transfer-scattering matrix and the chain- or ABCD-matrix of a 2n-port network embedded in a 4n-port supernetwork, are also mapped in a similar manner by matrix transformations of the same type. A fundamental application of this new transformation is the generalization of the concept of image-parameters known for 2-port networks to that of image-matrices for 2n-port networks. This generalization leads to a rigorous normal-mode analysis of wave-propagation on image-matched chains of cascaded 2n-port networks.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"71 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123606546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129950
M. Kumar, R. Menna, Ho-Chung Huang
This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.
{"title":"Broadband Dual-Gate FET Continuously Variable Phase Shifter","authors":"M. Kumar, R. Menna, Ho-Chung Huang","doi":"10.1109/MWSYM.1981.1129950","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129950","url":null,"abstract":"This paper describes a broadband, GaAs dual-gate FET phase shifter capable of continuous phase shift from 0/spl deg/ -360/spl deg/ over the 4-8 GHz band. Although the present unit is, in discreet term, it is designed to be compatible with monolithic fabrication technology.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128786586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129964
K. Wickersheim, R. V. Alves
Fluoroptic/sup TM/ Thermometry will be compared with other optical temperature measurement techniques, the scientific basis of Fluoroptic Thermometry will be presented, and performance characteristics and applications of the first commercial instrument based on this RF-immune technology will be discussed.
{"title":"A New Optical Technique for the Measurement of Temperature in RF and Microwave Fields","authors":"K. Wickersheim, R. V. Alves","doi":"10.1109/MWSYM.1981.1129964","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129964","url":null,"abstract":"Fluoroptic/sup TM/ Thermometry will be compared with other optical temperature measurement techniques, the scientific basis of Fluoroptic Thermometry will be presented, and performance characteristics and applications of the first commercial instrument based on this RF-immune technology will be discussed.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125724733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129947
K. Keeping, D. Rogers, J. Sureau
A full-commutating scanning switch matrix has been implemented for a 96-element C-band cylindrical array. The impact of cost/performance tradeoffs on the resulting configuration is discussed.
实现了96元c波段圆柱阵列的全换流扫描开关矩阵。讨论了成本/性能权衡对最终配置的影响。
{"title":"A Scanning Switch Matrix for a Cylindrical Array","authors":"K. Keeping, D. Rogers, J. Sureau","doi":"10.1109/MWSYM.1981.1129947","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129947","url":null,"abstract":"A full-commutating scanning switch matrix has been implemented for a 96-element C-band cylindrical array. The impact of cost/performance tradeoffs on the resulting configuration is discussed.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127372198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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