Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129995
M. F. Durkin, R. Eckstein, M. Mills, M. Stringfellow, R. Neidhard
Characteristics of a millimeter wave active array are described. Injection-locked pulsed IMPATT oscillators providing 36 watts peak transmitter power are integrated with a stripline-fed image array having a gain of 29 dBi. Performance of the transmitter, antenna and integrated active aperture are discussed.
{"title":"35 GHz Active Aperture","authors":"M. F. Durkin, R. Eckstein, M. Mills, M. Stringfellow, R. Neidhard","doi":"10.1109/MWSYM.1981.1129995","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129995","url":null,"abstract":"Characteristics of a millimeter wave active array are described. Injection-locked pulsed IMPATT oscillators providing 36 watts peak transmitter power are integrated with a stripline-fed image array having a gain of 29 dBi. Performance of the transmitter, antenna and integrated active aperture are discussed.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129634242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129942
L. Accatino, A. Angelucci
A new implementation of a 16.7 ns delay element for on-board regenerative satellite repeaters is presented. The use of high Q dielectric resonator delay filters allows a significant insertion loss reduction with respect to known microstrip solutions, full compatibility with other microstrip circuitry being still maintained. The reduced loss permits some critical demodulator specifications to be substantially relaxed.
{"title":"A Dielectric Resonator Filter As Low Loss Delay Element for 14 GHz On-Board 4/spl Oslash/- DCPSK Demodulation","authors":"L. Accatino, A. Angelucci","doi":"10.1109/MWSYM.1981.1129942","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129942","url":null,"abstract":"A new implementation of a 16.7 ns delay element for on-board regenerative satellite repeaters is presented. The use of high Q dielectric resonator delay filters allows a significant insertion loss reduction with respect to known microstrip solutions, full compatibility with other microstrip circuitry being still maintained. The reduced loss permits some critical demodulator specifications to be substantially relaxed.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129949200","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129814
G. Mau
A simplified dual-gate GaAs FET microwave model consisting of a cascode connection of single-gate FET's is developed, tested for validity, and discussed herein. Computer generated S-parameters of the model are compared to those measured for an actual device in the 2 to 9 GHz frequency range.
{"title":"A Microwave Model for the Dual-Gate GaAs MESFET","authors":"G. Mau","doi":"10.1109/MWSYM.1981.1129814","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129814","url":null,"abstract":"A simplified dual-gate GaAs FET microwave model consisting of a cascode connection of single-gate FET's is developed, tested for validity, and discussed herein. Computer generated S-parameters of the model are compared to those measured for an actual device in the 2 to 9 GHz frequency range.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133529993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129926
R. Lundgren, D. Snyder, J. Lull
Dual-gate GaAs MESFET logic has been used to develop a monolithic variable-modulus (/spl divide/10//spl divide/11) counter. The circuit incorporates a novel feedback design that will allow the counter to operate up to the maximum speed of its flip-flop components, which have demonstrated cutoff frequencies above 2.5 GHz. The full counter has operated to 1.6 GHz while mounted in a coplanar test fixture. Operation above 2 GHz is expected when a test fixture with reduced crosstalk is used.
{"title":"A High-Speed Monolithic GaAs 10/11 Counter","authors":"R. Lundgren, D. Snyder, J. Lull","doi":"10.1109/MWSYM.1981.1129926","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129926","url":null,"abstract":"Dual-gate GaAs MESFET logic has been used to develop a monolithic variable-modulus (/spl divide/10//spl divide/11) counter. The circuit incorporates a novel feedback design that will allow the counter to operate up to the maximum speed of its flip-flop components, which have demonstrated cutoff frequencies above 2.5 GHz. The full counter has operated to 1.6 GHz while mounted in a coplanar test fixture. Operation above 2 GHz is expected when a test fixture with reduced crosstalk is used.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132356553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129909
Y. Komatsu, T. Yamaguchi, T. Otobe, M. Hirabayashi
A GaAs FET MIC oscillator with very high frequency stability has been developed using a newly-developed dielectric resonator. The key to designing the dielectric resonator was to make the temperature dependence of the resonance frequency linear. This characteristic was realized in a stacking-type dielectric resonator with zirconate ceramics. The obtained frequency stability of /spl plusmn/85 kHz in temperatures -20 to +60/spl deg/C is sufficient for AM SHF TV receivers.
{"title":"A Frequency-Stabilized MIC Oscillator Using a Newly-Developed Dielectric Resonator","authors":"Y. Komatsu, T. Yamaguchi, T. Otobe, M. Hirabayashi","doi":"10.1109/MWSYM.1981.1129909","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129909","url":null,"abstract":"A GaAs FET MIC oscillator with very high frequency stability has been developed using a newly-developed dielectric resonator. The key to designing the dielectric resonator was to make the temperature dependence of the resonance frequency linear. This characteristic was realized in a stacking-type dielectric resonator with zirconate ceramics. The obtained frequency stability of /spl plusmn/85 kHz in temperatures -20 to +60/spl deg/C is sufficient for AM SHF TV receivers.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114881118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129819
N. Sobhy, E. A. Hosny
Commensurate transmission-line networks are designed in the time domain using state-space techniques with no restrictions on the network topology. Computer-aided procedures are used to optimise the time domain responses. Several examples are given of microwave networks designed using this technique.
{"title":"Microwave Filter Design in the Time Domain","authors":"N. Sobhy, E. A. Hosny","doi":"10.1109/MWSYM.1981.1129819","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129819","url":null,"abstract":"Commensurate transmission-line networks are designed in the time domain using state-space techniques with no restrictions on the network topology. Computer-aided procedures are used to optimise the time domain responses. Several examples are given of microwave networks designed using this technique.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128268155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129829
P. Pires, D. Rogers, E. Bochove, Rui F. Souza
Numerical methods of differentiation and interpolation were used to develop a method for the analysis of pulse dispersion in single-mode optical fibers based on solutions of the exact characteristic equation. Exact formulas for the necessary parameters are developed up to the point were computational procedures were recommended due to analytical complexity. Curves showing comparisons between our method and those showing the best asymptotic approaches are presented. This method permits greater precision in prediction of the ideal laser wavelength for use with a given single-mode optical fiber.
{"title":"A New Method of Pulse Dispersion Analysis for Simple-Mode Optical Fibers","authors":"P. Pires, D. Rogers, E. Bochove, Rui F. Souza","doi":"10.1109/MWSYM.1981.1129829","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129829","url":null,"abstract":"Numerical methods of differentiation and interpolation were used to develop a method for the analysis of pulse dispersion in single-mode optical fibers based on solutions of the exact characteristic equation. Exact formulas for the necessary parameters are developed up to the point were computational procedures were recommended due to analytical complexity. Curves showing comparisons between our method and those showing the best asymptotic approaches are presented. This method permits greater precision in prediction of the ideal laser wavelength for use with a given single-mode optical fiber.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128086199","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129811
T. Suzuki, M. Kobiki, M. Wataze, K. Segawa, M. Irie
Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.
{"title":"Plated Source Bridge (PSB) GaAs Power FET with Improved Reliability","authors":"T. Suzuki, M. Kobiki, M. Wataze, K. Segawa, M. Irie","doi":"10.1109/MWSYM.1981.1129811","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129811","url":null,"abstract":"Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125713679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129973
A. El-Sherbiny
A rigorous hybrid mode analysis is applied to the microstrip line on anisotropic substrate to determine its high frequency performance. The treatment is limited to substrates with uniaxial anisotropy with the principal axis perpendicular to the surface. This includes the practically important case of microstrip lines on Sapphire. The exact results obtained are used to check the validity of the previously introduced concept of equivalent isotropic substrate, which was used by some authors to simplify the calculations of the high frequency parameters of such lines .
{"title":"Hybrid Mode Analysis of Microstrip Lines on Anisotropic Substrates","authors":"A. El-Sherbiny","doi":"10.1109/MWSYM.1981.1129973","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129973","url":null,"abstract":"A rigorous hybrid mode analysis is applied to the microstrip line on anisotropic substrate to determine its high frequency performance. The treatment is limited to substrates with uniaxial anisotropy with the principal axis perpendicular to the surface. This includes the practically important case of microstrip lines on Sapphire. The exact results obtained are used to check the validity of the previously introduced concept of equivalent isotropic substrate, which was used by some authors to simplify the calculations of the high frequency parameters of such lines .","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125735183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1981-06-15DOI: 10.1109/MWSYM.1981.1129974
M. Aubourg, J. Villotte, F. Codon, Y. Garault
A two dimensional analysis of MIS (or Schottky contact) microstrip is made with the aid of the finite element method. Theoretical results are compared with experimental results.
利用有限元法对肖特基接触微带进行了二维分析。理论结果与实验结果进行了比较。
{"title":"Analysis of Microstrrip Line on Semiconductor Substrate","authors":"M. Aubourg, J. Villotte, F. Codon, Y. Garault","doi":"10.1109/MWSYM.1981.1129974","DOIUrl":"https://doi.org/10.1109/MWSYM.1981.1129974","url":null,"abstract":"A two dimensional analysis of MIS (or Schottky contact) microstrip is made with the aid of the finite element method. Theoretical results are compared with experimental results.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125987976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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