Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619515
T. S. Choi, H. K. Bae, J. Kim, M. Chung
Exact quasi-equilibrium analysis for the average energy, , of the field electrons emitted from the semiconductor as well as the metallic surfaces is discussed. The non-equilibrium effects at high temperatures and strong fields are calculated to investigate the average energy of field electrons for both metals and semiconductors. WKB approximation is used in obtaining the analytic expression of for both metals and semiconductors. The exact scheme is used in numerical calculation for both field electron energy distribution, j(/spl epsi/), and without the WKB approximation. The difference between the two values of obtained analytically and numerically is found to be small for semiconductors such as Si and III-V nitrides. The obtained analytic form of can be used in finding the values of the average energy of field electrons.
{"title":"Analytic and numerical analysis of average energies of field electrons","authors":"T. S. Choi, H. K. Bae, J. Kim, M. Chung","doi":"10.1109/IVNC.2005.1619515","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619515","url":null,"abstract":"Exact quasi-equilibrium analysis for the average energy, , of the field electrons emitted from the semiconductor as well as the metallic surfaces is discussed. The non-equilibrium effects at high temperatures and strong fields are calculated to investigate the average energy of field electrons for both metals and semiconductors. WKB approximation is used in obtaining the analytic expression of for both metals and semiconductors. The exact scheme is used in numerical calculation for both field electron energy distribution, j(/spl epsi/), and without the WKB approximation. The difference between the two values of obtained analytically and numerically is found to be small for semiconductors such as Si and III-V nitrides. The obtained analytic form of can be used in finding the values of the average energy of field electrons.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122818827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619482
Jun Chen, N. Y. Huang, J. She, S. Deng, N. Xu, Shih-Hsuan Yang
CuO nanobelt arrays were prepared by an aqueous reaction method at room temperature. Effects of pulsed and continuous light illumination on field emission from CuO nanobelt arrays were studied. Possible physical mechanisms behind the observed phenomena are discussed.
{"title":"Field emission properties of CuO nanobelts film under light illumination","authors":"Jun Chen, N. Y. Huang, J. She, S. Deng, N. Xu, Shih-Hsuan Yang","doi":"10.1109/IVNC.2005.1619482","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619482","url":null,"abstract":"CuO nanobelt arrays were prepared by an aqueous reaction method at room temperature. Effects of pulsed and continuous light illumination on field emission from CuO nanobelt arrays were studied. Possible physical mechanisms behind the observed phenomena are discussed.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115234201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619576
K. Liu, C. Chiang, J. Heritage
Successful integration of gated field emitter arrays (FEAs) on p-Si substrates with an improved fabrication procedure that results in dramatically reduced leakage current to the gate is presented. Improved fabrication procedure enables a maximum anode-to-gate current ratio of 3300 and high photocurrent to dark current contrast. The dark current at 150 V is 6 /spl mu/A, about 40 times less than an earlier device. I-V curve shows an abrupt transition from field emission to the supply-limited emission at around 50 V. A linear response of the photocurrent to optical power up to sub-milliamp range is achieved. Analyses show that sub-nanosecond response time is possible. These results show promising applications of gated FEA photocathodes in microwave tubes and electron accelerators.
{"title":"Photo-response measurements and temporal analyses of gated p-silicon field emitter array","authors":"K. Liu, C. Chiang, J. Heritage","doi":"10.1109/IVNC.2005.1619576","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619576","url":null,"abstract":"Successful integration of gated field emitter arrays (FEAs) on p-Si substrates with an improved fabrication procedure that results in dramatically reduced leakage current to the gate is presented. Improved fabrication procedure enables a maximum anode-to-gate current ratio of 3300 and high photocurrent to dark current contrast. The dark current at 150 V is 6 /spl mu/A, about 40 times less than an earlier device. I-V curve shows an abrupt transition from field emission to the supply-limited emission at around 50 V. A linear response of the photocurrent to optical power up to sub-milliamp range is achieved. Analyses show that sub-nanosecond response time is possible. These results show promising applications of gated FEA photocathodes in microwave tubes and electron accelerators.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116903658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619530
J.H. Park, J. Jeong, J. Moon, J. Han, A. Berdinsky, J. Yoo, C.Y. Park, J. Nam, J.M. Kim
In this study, the effects of electrical aging on emission stability of screen-printed carbon nanotube(CNT) emitter is investigated. Results show that stable and uniform emission currents from CNT emitter are obtained during the multiple field emission cycling. During the initial stage of electrical aging, an emission current fluctuation is observed and is gradually reduced and electron emission stabilized as time passes.
{"title":"Effect of electrical aging on emission stability of carbon nanotube field emitter","authors":"J.H. Park, J. Jeong, J. Moon, J. Han, A. Berdinsky, J. Yoo, C.Y. Park, J. Nam, J.M. Kim","doi":"10.1109/IVNC.2005.1619530","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619530","url":null,"abstract":"In this study, the effects of electrical aging on emission stability of screen-printed carbon nanotube(CNT) emitter is investigated. Results show that stable and uniform emission currents from CNT emitter are obtained during the multiple field emission cycling. During the initial stage of electrical aging, an emission current fluctuation is observed and is gradually reduced and electron emission stabilized as time passes.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114646405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619552
Sunyoung Chang, Bum Jung Kim, Jiyoung Jang, W. Yi
The synthesis of polypyrrole by polymerization in vapor phase is reported. To enhance the conductance, imogolite is introduced. Imogolite is a nanometer-sized tubular structured material whose large surface offers considerable space for adsorption of polypyrrole. The change in conductance of polypyrrole on imogolite surface when irradiated with UV-light during polymerization is also measured.
{"title":"Conductance measurement during the synthesis of conducting polymer","authors":"Sunyoung Chang, Bum Jung Kim, Jiyoung Jang, W. Yi","doi":"10.1109/IVNC.2005.1619552","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619552","url":null,"abstract":"The synthesis of polypyrrole by polymerization in vapor phase is reported. To enhance the conductance, imogolite is introduced. Imogolite is a nanometer-sized tubular structured material whose large surface offers considerable space for adsorption of polypyrrole. The change in conductance of polypyrrole on imogolite surface when irradiated with UV-light during polymerization is also measured.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121958519","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619581
J. She, H. Hao, S. Deng, Jun Chen, N. Xu, S. Huq, L. Wang
We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) apexes. It was found that for a 40/spl times/40 gated Si tip array with DLC apexes, an emission current density up to 0.23 A/cm/sup 2/ can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.
我们报道了具有类金刚石(DLC)顶点的定义良好的门控硅微尖阵列的制造和表征。结果表明，当栅极电压为200 V时，具有DLC顶点的40/spl倍/40门控Si尖端阵列的发射电流密度可达0.23 a /cm/sup 2/。器件的导通栅极电压在38- 50v范围内。
{"title":"Field electron emission from gated Si tip arrays with DLC apexes","authors":"J. She, H. Hao, S. Deng, Jun Chen, N. Xu, S. Huq, L. Wang","doi":"10.1109/IVNC.2005.1619581","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619581","url":null,"abstract":"We report the fabrication and characterization of well-defined gated Si microtip arrays with diamond-like carbon (DLC) apexes. It was found that for a 40/spl times/40 gated Si tip array with DLC apexes, an emission current density up to 0.23 A/cm/sup 2/ can be obtained at an applied gate voltage of 200 V. The turn-on gate voltage of the devices is fall in a range of 38-50 V.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116955992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619565
G. A. Shafeev, A. Karabutov, A. Chakhovskoi, N. Badi, A. Nair, A. Bensaoula
In this paper, a new type of self-organized Si micro-tip arrays was designed by introducing a gold coating during laser-assisted ablation of Si wafers in vacuum to improve the emission properties of the arrays. The results showed that the typical emission current limit for the Si/Au arrays was improved compared with recently studied Si or Ni micro-arrays. On the other hand, a macroscopic surface uniformity of the tips height and sharpness is not sufficient to achieve perfect emission uniformity for the emission arrays. So future improvement could be made by incorporation of carbon nanotubes into a surface layer of Si/Au micro-tips.
{"title":"Composite Au-Si micro-tip field emitter arrays produced by self-organized laser-induced process","authors":"G. A. Shafeev, A. Karabutov, A. Chakhovskoi, N. Badi, A. Nair, A. Bensaoula","doi":"10.1109/IVNC.2005.1619565","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619565","url":null,"abstract":"In this paper, a new type of self-organized Si micro-tip arrays was designed by introducing a gold coating during laser-assisted ablation of Si wafers in vacuum to improve the emission properties of the arrays. The results showed that the typical emission current limit for the Si/Au arrays was improved compared with recently studied Si or Ni micro-arrays. On the other hand, a macroscopic surface uniformity of the tips height and sharpness is not sufficient to achieve perfect emission uniformity for the emission arrays. So future improvement could be made by incorporation of carbon nanotubes into a surface layer of Si/Au micro-tips.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122865333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619525
K. Aplin, B. Kent, H. Lockwood, J. Rouse, R. Stevens, L. Wang
This paper will examine the variability in field emission during life testing of silicon tip devices fabricated at the Rutherford Appleton Laboratory. Life tests at both constant voltage and software-controlled constant current have been carried out. Variability in emitted currents was expected from several non-linear effects. Firstly, the well-known Fowler-Nordheim response of field emission current to voltage has some interesting consequences. If the emitted current i is related to gate voltage V by a simplified form of the Fowler-Nordheim relation. The accuracy of the high-specification Keithley 487 voltage source used in the laboratory testing is specified as 0.15% + 40 mV. At typical operating voltages this corresponds to a fluctuation in emission current of 1-2%. This implies that even in idealised conditions, with identical field emitters running at constant voltage, variation in the emission current can be expected. A finite element model incorporating the Fowler-Nordheim equation has been used to predict the response of emission current to tip diameter, using the measured range of /spl sim/28-40 nm as an input parameter. The basic noise level of 1-2% will be increased as a consequence of the distribution of tip diameters.
{"title":"Sources of variability in long-term testing of silicon tip field emission","authors":"K. Aplin, B. Kent, H. Lockwood, J. Rouse, R. Stevens, L. Wang","doi":"10.1109/IVNC.2005.1619525","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619525","url":null,"abstract":"This paper will examine the variability in field emission during life testing of silicon tip devices fabricated at the Rutherford Appleton Laboratory. Life tests at both constant voltage and software-controlled constant current have been carried out. Variability in emitted currents was expected from several non-linear effects. Firstly, the well-known Fowler-Nordheim response of field emission current to voltage has some interesting consequences. If the emitted current i is related to gate voltage V by a simplified form of the Fowler-Nordheim relation. The accuracy of the high-specification Keithley 487 voltage source used in the laboratory testing is specified as 0.15% + 40 mV. At typical operating voltages this corresponds to a fluctuation in emission current of 1-2%. This implies that even in idealised conditions, with identical field emitters running at constant voltage, variation in the emission current can be expected. A finite element model incorporating the Fowler-Nordheim equation has been used to predict the response of emission current to tip diameter, using the measured range of /spl sim/28-40 nm as an input parameter. The basic noise level of 1-2% will be increased as a consequence of the distribution of tip diameters.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123665898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619531
C. Kimura, M. Terayama, T. Sugino
This paper investigates the field emission characteristics for the carbon black field emitters with various carbon powder concentration. Moreover, BN nanofilm is deposited on the carbon black emitter in order to improve the field emission characteristics. A reduction in the turn-on electric field and an increase of the emission site are demonstrated. A uniformity of the electron emission is significantly improved.
{"title":"Electron emission characteristics of boron nitride/carbon black field emitter","authors":"C. Kimura, M. Terayama, T. Sugino","doi":"10.1109/IVNC.2005.1619531","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619531","url":null,"abstract":"This paper investigates the field emission characteristics for the carbon black field emitters with various carbon powder concentration. Moreover, BN nanofilm is deposited on the carbon black emitter in order to improve the field emission characteristics. A reduction in the turn-on electric field and an increase of the emission site are demonstrated. A uniformity of the electron emission is significantly improved.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116352832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619536
C. Chiang, K. Liu, J. Heritage
This paper demonstrated sub-microsecond photoresponse on gated Si field emitter array (FEA) using lightly p-doped Si, which is two orders of magnitude better than the authors' previous results. The authors anticipated that a device structure optimized to reduce series resistance and an improved RF circuit would result in pulse response approaching the sub-nanosecond regime.
{"title":"Sub-microsecond photo-excitation of gated p-type silicon field emitter arrays","authors":"C. Chiang, K. Liu, J. Heritage","doi":"10.1109/IVNC.2005.1619536","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619536","url":null,"abstract":"This paper demonstrated sub-microsecond photoresponse on gated Si field emitter array (FEA) using lightly p-doped Si, which is two orders of magnitude better than the authors' previous results. The authors anticipated that a device structure optimized to reduce series resistance and an improved RF circuit would result in pulse response approaching the sub-nanosecond regime.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115970373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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