Triple junction of metal-dielectric-vacuum is theoretically analysed. Electric field enhancement is observed in the vicinity of a metal-dielectric contact and considered to be due to the presence of dielectric. The dielectric enhancement in the problem gives rise to a new concept that dielectric can enhance the electric field, which is opposite to the usual view that dielectric reduces the electric field. This new type of enhancement is attributed to the polarization of dielectric. It is also found that the metal-dielectric-vacuum path is more favorable than the metal-vacuum path for field electrons. The present results suggest that the triple junction can be a new type of field emission source
{"title":"Theoretical analysis of triple junction field emission for a new type of cold cathode","authors":"M. Chung, T. S. Choi, P. H. Cutler, N. Miskovsky","doi":"10.1116/1.2185650","DOIUrl":"https://doi.org/10.1116/1.2185650","url":null,"abstract":"Triple junction of metal-dielectric-vacuum is theoretically analysed. Electric field enhancement is observed in the vicinity of a metal-dielectric contact and considered to be due to the presence of dielectric. The dielectric enhancement in the problem gives rise to a new concept that dielectric can enhance the electric field, which is opposite to the usual view that dielectric reduces the electric field. This new type of enhancement is attributed to the polarization of dielectric. It is also found that the metal-dielectric-vacuum path is more favorable than the metal-vacuum path for field electrons. The present results suggest that the triple junction can be a new type of field emission source","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129518953","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619595
S. Wei, W. Kang, J. Davidson, W. Hofmeister, B. Choi, J.H. Huang
In this paper, vertically aligned carbon nanotubes field emission devices were fabricated from the as grown carbon nanotubes (CNTs) by furnace thermal CVD at atmospheric pressure. The device was tested in vacuum (/spl sim/10/sup -6/ torr) for field emission characterization. The turn-on field was about 3 V//spl mu/m, which is comparable to data reported elsewhere.
{"title":"Vertically aligned carbon nanotubes field emission devices fabricated by furnace thermal CVD at atmospheric pressure","authors":"S. Wei, W. Kang, J. Davidson, W. Hofmeister, B. Choi, J.H. Huang","doi":"10.1109/IVNC.2005.1619595","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619595","url":null,"abstract":"In this paper, vertically aligned carbon nanotubes field emission devices were fabricated from the as grown carbon nanotubes (CNTs) by furnace thermal CVD at atmospheric pressure. The device was tested in vacuum (/spl sim/10/sup -6/ torr) for field emission characterization. The turn-on field was about 3 V//spl mu/m, which is comparable to data reported elsewhere.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"81 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124577341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619463
B. Satyanarayana
In an effort to develop a relatively low cost-low temperature process based technology compatible with semiconductor technology, a low field electron emission from a nanocarbon based multilayered electron emitter was studied. Some of the results are presented in this paper as well as a possible mechanism of emission from such multilayered electron emitter.
{"title":"Emission mechanism for field assisted electron emission from a novel multilayered nanocarbon based electron emitter","authors":"B. Satyanarayana","doi":"10.1109/IVNC.2005.1619463","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619463","url":null,"abstract":"In an effort to develop a relatively low cost-low temperature process based technology compatible with semiconductor technology, a low field electron emission from a nanocarbon based multilayered electron emitter was studied. Some of the results are presented in this paper as well as a possible mechanism of emission from such multilayered electron emitter.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131115322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619579
T. Yoshimoto, N. Yokogawa, T. Iwata
The field emission characteristics from the SiC micro powders with sharp edge are investigated. The edge of the SiC powder works as the field emitter. The emission current follows the Fowler-Nordheim relationship. An excellent emission stability in short term is confirmed. These results show that the SiC powder is a good candidate for field electron source.
{"title":"Field emission characteristics form SiC micro powders","authors":"T. Yoshimoto, N. Yokogawa, T. Iwata","doi":"10.1109/IVNC.2005.1619579","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619579","url":null,"abstract":"The field emission characteristics from the SiC micro powders with sharp edge are investigated. The edge of the SiC powder works as the field emitter. The emission current follows the Fowler-Nordheim relationship. An excellent emission stability in short term is confirmed. These results show that the SiC powder is a good candidate for field electron source.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116466359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619524
N. Kiselev, A. L. Musatov, J. Hutchison, O. Zhigalina, E. Kukovitskiǐ, V. Artemov, Y. Grigoriev, K. R. Izrael’yants, S. L’vov
Carbon nanotube (NT) layers grown by CVD on Ni foil demonstrated low voltage characteristics of field electron emission: the value of the field amplification coefficient beta was in the range 1000-4000. The influence of electric field (Eav), emission current (IFE ) and exposure time on the configuration of conical-layer carbon nanotubes grown by CVD on the edge of a Ni foil has been investigated. TEM profile imaging revealed a significant concentration of NTs close to the edge surface, whereas on the NTs layers' outer surfaces single, non-oriented NTs with open ends free of catalytic particles, were observed. After sufficient electric field application many NTs become oriented towards the anode, but one or two of them were always a few microns more extended. In-situ SEM investigation showed that below Eav = 3.2 - 3.9 V/mum, emission was achieved at the expense of originally existing free NTs ends. Configuration changes began at the higher applied fields. On the observed foil edge length (14.6 - 17.8 mum) and the edge thickness 200 mum one or two NTs extended towards the anode and probably become main emitters. On further increasing the field to Eav= 5.7 - 8 V/mum and at IFE=2times10-5 A these tubes disappeared (or essentially shortened). At Eav = 8 V/mum and higher, and at an exposure time of up to 40 min, several tens of extended NTs appeared with one or two extended significantly beyond the others. This NT configuration pattern is probably connected with electrostatic screening between the NTs. It is suggested that in the range of Eav and IFE that was investigated, a limited number of NTs were emitting and these nanotubes were constantly changing as Eav, IFE and exposure time increase
{"title":"The influence of electric field and emission current on the configuration of nanotubes in carbon nanotubes layers","authors":"N. Kiselev, A. L. Musatov, J. Hutchison, O. Zhigalina, E. Kukovitskiǐ, V. Artemov, Y. Grigoriev, K. R. Izrael’yants, S. L’vov","doi":"10.1109/IVNC.2005.1619524","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619524","url":null,"abstract":"Carbon nanotube (NT) layers grown by CVD on Ni foil demonstrated low voltage characteristics of field electron emission: the value of the field amplification coefficient beta was in the range 1000-4000. The influence of electric field (Eav), emission current (IFE ) and exposure time on the configuration of conical-layer carbon nanotubes grown by CVD on the edge of a Ni foil has been investigated. TEM profile imaging revealed a significant concentration of NTs close to the edge surface, whereas on the NTs layers' outer surfaces single, non-oriented NTs with open ends free of catalytic particles, were observed. After sufficient electric field application many NTs become oriented towards the anode, but one or two of them were always a few microns more extended. In-situ SEM investigation showed that below Eav = 3.2 - 3.9 V/mum, emission was achieved at the expense of originally existing free NTs ends. Configuration changes began at the higher applied fields. On the observed foil edge length (14.6 - 17.8 mum) and the edge thickness 200 mum one or two NTs extended towards the anode and probably become main emitters. On further increasing the field to Eav= 5.7 - 8 V/mum and at IFE=2times10-5 A these tubes disappeared (or essentially shortened). At Eav = 8 V/mum and higher, and at an exposure time of up to 40 min, several tens of extended NTs appeared with one or two extended significantly beyond the others. This NT configuration pattern is probably connected with electrostatic screening between the NTs. It is suggested that in the range of Eav and IFE that was investigated, a limited number of NTs were emitting and these nanotubes were constantly changing as Eav, IFE and exposure time increase","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127110439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619496
L. Velásquez-García, A. Akinwande, M. Martínez-Sánchez
This paper reports the design, fabrication, and experimental characterization of a microfabricated, internally-fed linear array of electrospray emitters intended for space propulsion applications. The engine uses highly doped formamide as propellant, with electrical conductivity in the 0.3 - 3.0 S/m range. The electrospray array operates in the single Taylor cone droplet emission regime, and it requires about 2000 V to become activated. The reported device demonstrates the feasibility of high clustering of the electrospray emitters.
{"title":"Fabrication and characterization of a micro-fabricated linear array of electrospray emitters intended for space thruster applications","authors":"L. Velásquez-García, A. Akinwande, M. Martínez-Sánchez","doi":"10.1109/IVNC.2005.1619496","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619496","url":null,"abstract":"This paper reports the design, fabrication, and experimental characterization of a microfabricated, internally-fed linear array of electrospray emitters intended for space propulsion applications. The engine uses highly doped formamide as propellant, with electrical conductivity in the 0.3 - 3.0 S/m range. The electrospray array operates in the single Taylor cone droplet emission regime, and it requires about 2000 V to become activated. The reported device demonstrates the feasibility of high clustering of the electrospray emitters.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123793332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619639
A. Phommahaxay, G. Lissorgues, T. Bourouina, P. Nicole
In using a single mask fabrication process, our work enables the rapid prototyping of vacuum micro-components. The first prototypes, including lateral diodes and triodes, have been produced with a low-cost aluminum process, consisting of one metal layer, one lithography step and silicon micromachining. The effects of the process optimization on the characteristics will be assessed. Different configurations using more suitable field emitter materials such as tungsten will be studied in the future.
{"title":"Single mask fabrication process of vacuum microelectronics components and preliminary characterization results","authors":"A. Phommahaxay, G. Lissorgues, T. Bourouina, P. Nicole","doi":"10.1109/IVNC.2005.1619639","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619639","url":null,"abstract":"In using a single mask fabrication process, our work enables the rapid prototyping of vacuum micro-components. The first prototypes, including lateral diodes and triodes, have been produced with a low-cost aluminum process, consisting of one metal layer, one lithography step and silicon micromachining. The effects of the process optimization on the characteristics will be assessed. Different configurations using more suitable field emitter materials such as tungsten will be studied in the future.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132269588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619504
Liu Xinghui, Zhu Changchun, Zeng Fanguang
The field emission current as a function of the closed-end single-walled CNTs was investigated by using the tight-binding approximation including curvature effect. The discontinuous field emission electron energy distribution and multi-peaks electron emission were found.
{"title":"Study on field emission characteristics of individual SWNT from quantized band-structure with curvature effect included","authors":"Liu Xinghui, Zhu Changchun, Zeng Fanguang","doi":"10.1109/IVNC.2005.1619504","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619504","url":null,"abstract":"The field emission current as a function of the closed-end single-walled CNTs was investigated by using the tight-binding approximation including curvature effect. The discontinuous field emission electron energy distribution and multi-peaks electron emission were found.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127006171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619596
Wang Weibiao, Xia Yuxue, Lei Da, Chen Song, L. Lili, Chen Ming, L. Jingqiu
This study introduced a kind of carbon microtubes. These materials have some different properties with carbon nanotubes and the density is lower than carbon nanotube bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes were also determined.
{"title":"Fabrication and electron emission of carbon microtubes","authors":"Wang Weibiao, Xia Yuxue, Lei Da, Chen Song, L. Lili, Chen Ming, L. Jingqiu","doi":"10.1109/IVNC.2005.1619596","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619596","url":null,"abstract":"This study introduced a kind of carbon microtubes. These materials have some different properties with carbon nanotubes and the density is lower than carbon nanotube bundles. These carbon microtubes are directly synthesized by liquidoid epitaxy method on silicon substrates at low temperature. The field emission properties of carbon microtubes were also determined.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131165472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619558
W. Tsang, V. Stolojan, C. Giusca, C. Poa, B. Sealy, S. Silva, S. Wong
This paper investigates the introduction of nano-sized Ag cluster into a SiO/sub 2/ matrix by Ag/sup +/ implantation on thermally oxidised SiO/sub 2/ layers. The embedded Ag nanoclusters create conducting paths for the emissive electrons from substrate to emission surface and give rise to a local electric field enhancement due to an electrical inhomogeneity effect.
{"title":"The electron field emission properties of Ag-SiO/sub 2/ nanocomposite layers","authors":"W. Tsang, V. Stolojan, C. Giusca, C. Poa, B. Sealy, S. Silva, S. Wong","doi":"10.1109/IVNC.2005.1619558","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619558","url":null,"abstract":"This paper investigates the introduction of nano-sized Ag cluster into a SiO/sub 2/ matrix by Ag/sup +/ implantation on thermally oxidised SiO/sub 2/ layers. The embedded Ag nanoclusters create conducting paths for the emissive electrons from substrate to emission surface and give rise to a local electric field enhancement due to an electrical inhomogeneity effect.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131676779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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