Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619618
X.H. Liang, N. Xu, Jun Chen, S. Deng
The damage effects of emission current of different levels on the carbon nanotube (CNT) films were investigated. A critical emission current density is found, which divides the different dominative mechanisms responsible for the damage of the CNT films.
{"title":"Damage of carbon nanotube films during field emission","authors":"X.H. Liang, N. Xu, Jun Chen, S. Deng","doi":"10.1109/IVNC.2005.1619618","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619618","url":null,"abstract":"The damage effects of emission current of different levels on the carbon nanotube (CNT) films were investigated. A critical emission current density is found, which divides the different dominative mechanisms responsible for the damage of the CNT films.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"9 41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126989706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619587
R.C. Smith, W. Tsang, D. Cox, S. Silva
Electron field emission from an isolated carbon nanotube (CNT) were performed in-situ in a modified scanning electron microscope, over a range of anode to CNT tip separations, D, of 1 to 60 /spl mu/m. The CNT was exposed from a CNT-polymer composite which was physically broken and examined along the broken edge. The threshold field required for an emission of 100 nA was seen to decrease from a value of 45 V/spl mu/m/sup -1/ at an anode to CNT tip separation of 1 /spl mu/m, and asymptotically approaches 4 V/spl mu/m/sup -1/ at a separation of 60 /spl mu/m. By defining the separation as (D-h) rather than D, where h is the height of the CNT, our applied electric field is E=V/(D-h). Calculation of enhancement factor using the Fowler Nordheim equation shows an increase in enhancement factor with an increasing D, and ties in well with the decrease in threshold field with increasing D. Under "far field" conditions, where D > 3h, the CNT enhancement factor is no longer dependent on D as shown by the asymptotic behaviour of threshold field, and is purely a factor of the CNT height and radius. Fowler-Nordheim analysis allowed calculation of the emission currents for given CNT to tip separation. The calculated emission current, threshold field and enhancement are comparable to that found experimentally.
{"title":"Electron field emission from a single carbon nanotube: effects of anode location","authors":"R.C. Smith, W. Tsang, D. Cox, S. Silva","doi":"10.1109/IVNC.2005.1619587","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619587","url":null,"abstract":"Electron field emission from an isolated carbon nanotube (CNT) were performed in-situ in a modified scanning electron microscope, over a range of anode to CNT tip separations, D, of 1 to 60 /spl mu/m. The CNT was exposed from a CNT-polymer composite which was physically broken and examined along the broken edge. The threshold field required for an emission of 100 nA was seen to decrease from a value of 45 V/spl mu/m/sup -1/ at an anode to CNT tip separation of 1 /spl mu/m, and asymptotically approaches 4 V/spl mu/m/sup -1/ at a separation of 60 /spl mu/m. By defining the separation as (D-h) rather than D, where h is the height of the CNT, our applied electric field is E=V/(D-h). Calculation of enhancement factor using the Fowler Nordheim equation shows an increase in enhancement factor with an increasing D, and ties in well with the decrease in threshold field with increasing D. Under \"far field\" conditions, where D > 3h, the CNT enhancement factor is no longer dependent on D as shown by the asymptotic behaviour of threshold field, and is purely a factor of the CNT height and radius. Fowler-Nordheim analysis allowed calculation of the emission currents for given CNT to tip separation. The calculated emission current, threshold field and enhancement are comparable to that found experimentally.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131878945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619634
Y. Park, H. Kim, I. Han, A.Z. Zoulkarneev, K. Min, C.W. Baek, T. Jeong, D. Chung, S. Park, J.H. Choi, B. K. Song, H.S. Kang, J. Heo, Y.W. Jin, J.M. Kim
In this report, we have controlled the growth of multiwalled carbon nanotubes (MWNT) in terms of the populations and diameters by introducing a buffer layer between catalytic layer and amorphous silicon coated substrates. The carbon nanotubes growth with the chemical vapor deposition technique might produce interaction of the metallic catalyst with silicon layer, which could interrupt the catalytic effect. We will show how control of diffusion layer between the amorphous silicon and metal catalyst effectively control the formation of the silicide phase and consequently optimize the carbon nanotubes growth. It is performed on amorphous silicon coated glass by infrared radiation heated thermal chemical vapor deposition(CVD), using a gas mixture of carbon mono-oxide and hydrogen and Fe-Ni-Co alloy catalyst at temperatures as low as 480/spl sim/580/spl deg/C.
{"title":"Density control of carbon nanotubes for field emission display by control of catalytic layer diffusion","authors":"Y. Park, H. Kim, I. Han, A.Z. Zoulkarneev, K. Min, C.W. Baek, T. Jeong, D. Chung, S. Park, J.H. Choi, B. K. Song, H.S. Kang, J. Heo, Y.W. Jin, J.M. Kim","doi":"10.1109/IVNC.2005.1619634","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619634","url":null,"abstract":"In this report, we have controlled the growth of multiwalled carbon nanotubes (MWNT) in terms of the populations and diameters by introducing a buffer layer between catalytic layer and amorphous silicon coated substrates. The carbon nanotubes growth with the chemical vapor deposition technique might produce interaction of the metallic catalyst with silicon layer, which could interrupt the catalytic effect. We will show how control of diffusion layer between the amorphous silicon and metal catalyst effectively control the formation of the silicide phase and consequently optimize the carbon nanotubes growth. It is performed on amorphous silicon coated glass by infrared radiation heated thermal chemical vapor deposition(CVD), using a gas mixture of carbon mono-oxide and hydrogen and Fe-Ni-Co alloy catalyst at temperatures as low as 480/spl sim/580/spl deg/C.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134311240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619458
Zhibing Li, Weiliang Wang, S. Deng, N. Xu
It is shown that significant field emission from nanorods of wide band gap semiconductors is possible. The nanorod is assumed to have a thin surface layer containing a large number of localized states originating from defects. Taking SiC as an example, the electrostatic potential, charge distribution, conduction current, tunnelling current, and field enhancement are calculated. It is found that the field-induced insulator to semimetal transition is responsible for the efficient field emission from the nanorods and that field enhancement is not constant with applied fields but varies with the field and has a maximum.
{"title":"Field electron emission of nanorods of semiconductors of wide energy band gaps","authors":"Zhibing Li, Weiliang Wang, S. Deng, N. Xu","doi":"10.1109/IVNC.2005.1619458","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619458","url":null,"abstract":"It is shown that significant field emission from nanorods of wide band gap semiconductors is possible. The nanorod is assumed to have a thin surface layer containing a large number of localized states originating from defects. Taking SiC as an example, the electrostatic potential, charge distribution, conduction current, tunnelling current, and field enhancement are calculated. It is found that the field-induced insulator to semimetal transition is responsible for the efficient field emission from the nanorods and that field enhancement is not constant with applied fields but varies with the field and has a maximum.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130344552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619595
S. Wei, W. Kang, J. Davidson, W. Hofmeister, B. Choi, J.H. Huang
In this paper, vertically aligned carbon nanotubes field emission devices were fabricated from the as grown carbon nanotubes (CNTs) by furnace thermal CVD at atmospheric pressure. The device was tested in vacuum (/spl sim/10/sup -6/ torr) for field emission characterization. The turn-on field was about 3 V//spl mu/m, which is comparable to data reported elsewhere.
{"title":"Vertically aligned carbon nanotubes field emission devices fabricated by furnace thermal CVD at atmospheric pressure","authors":"S. Wei, W. Kang, J. Davidson, W. Hofmeister, B. Choi, J.H. Huang","doi":"10.1109/IVNC.2005.1619595","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619595","url":null,"abstract":"In this paper, vertically aligned carbon nanotubes field emission devices were fabricated from the as grown carbon nanotubes (CNTs) by furnace thermal CVD at atmospheric pressure. The device was tested in vacuum (/spl sim/10/sup -6/ torr) for field emission characterization. The turn-on field was about 3 V//spl mu/m, which is comparable to data reported elsewhere.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"81 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124577341","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619558
W. Tsang, V. Stolojan, C. Giusca, C. Poa, B. Sealy, S. Silva, S. Wong
This paper investigates the introduction of nano-sized Ag cluster into a SiO/sub 2/ matrix by Ag/sup +/ implantation on thermally oxidised SiO/sub 2/ layers. The embedded Ag nanoclusters create conducting paths for the emissive electrons from substrate to emission surface and give rise to a local electric field enhancement due to an electrical inhomogeneity effect.
{"title":"The electron field emission properties of Ag-SiO/sub 2/ nanocomposite layers","authors":"W. Tsang, V. Stolojan, C. Giusca, C. Poa, B. Sealy, S. Silva, S. Wong","doi":"10.1109/IVNC.2005.1619558","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619558","url":null,"abstract":"This paper investigates the introduction of nano-sized Ag cluster into a SiO/sub 2/ matrix by Ag/sup +/ implantation on thermally oxidised SiO/sub 2/ layers. The embedded Ag nanoclusters create conducting paths for the emissive electrons from substrate to emission surface and give rise to a local electric field enhancement due to an electrical inhomogeneity effect.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131676779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619490
N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Namba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
A 256 /spl times/ 192 pixels active-matrix cold electron emitter array with integrated scan driver circuits is developed. The basic structure of the electron emitter is almost the same as that of an advanced HEED (high-efficiency electron emission device) previously reported. The emission current density of the active-matrix HEED has been enhanced more than 100 times compared to that of the advanced HEED under the passive operation mode. It is demonstrated that the developed emitter can be applied to flat image sensing with a high-gain avalanche rushing amorphous photoconductor (HARP) target.
{"title":"High-current emission from active-matrix HEED (high-efficiency electron emission device) - application to image sensing","authors":"N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Namba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida","doi":"10.1109/IVNC.2005.1619490","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619490","url":null,"abstract":"A 256 /spl times/ 192 pixels active-matrix cold electron emitter array with integrated scan driver circuits is developed. The basic structure of the electron emitter is almost the same as that of an advanced HEED (high-efficiency electron emission device) previously reported. The emission current density of the active-matrix HEED has been enhanced more than 100 times compared to that of the advanced HEED under the passive operation mode. It is demonstrated that the developed emitter can be applied to flat image sensing with a high-gain avalanche rushing amorphous photoconductor (HARP) target.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134541731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619639
A. Phommahaxay, G. Lissorgues, T. Bourouina, P. Nicole
In using a single mask fabrication process, our work enables the rapid prototyping of vacuum micro-components. The first prototypes, including lateral diodes and triodes, have been produced with a low-cost aluminum process, consisting of one metal layer, one lithography step and silicon micromachining. The effects of the process optimization on the characteristics will be assessed. Different configurations using more suitable field emitter materials such as tungsten will be studied in the future.
{"title":"Single mask fabrication process of vacuum microelectronics components and preliminary characterization results","authors":"A. Phommahaxay, G. Lissorgues, T. Bourouina, P. Nicole","doi":"10.1109/IVNC.2005.1619639","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619639","url":null,"abstract":"In using a single mask fabrication process, our work enables the rapid prototyping of vacuum micro-components. The first prototypes, including lateral diodes and triodes, have been produced with a low-cost aluminum process, consisting of one metal layer, one lithography step and silicon micromachining. The effects of the process optimization on the characteristics will be assessed. Different configurations using more suitable field emitter materials such as tungsten will be studied in the future.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132269588","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619613
J. Shaw, D. Hsu
Field emission in hydrogen at pressures near 10/sup -4/ torr increases the current produced by carbon nanotube field emitter arrays. In this paper, a more detailed current and energy analysis including the effects of cracking the hydrogen using a hot filament, long-term exposure, and the production of ions is reported. The carbon nanotubes are grown using PECVD. With the gate voltage held at 24 V, the anode current increased from 0.4 /spl mu/A before exposure to H, to 4 /spl mu/A after half an hour under atomic hydrogen. Fowler-Nordheim analysis suggests a reduced work function or emitter radius and reduced emission area or reduced density of states.
{"title":"Field emission from carbon nanotube FEAs in hydrogen","authors":"J. Shaw, D. Hsu","doi":"10.1109/IVNC.2005.1619613","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619613","url":null,"abstract":"Field emission in hydrogen at pressures near 10/sup -4/ torr increases the current produced by carbon nanotube field emitter arrays. In this paper, a more detailed current and energy analysis including the effects of cracking the hydrogen using a hot filament, long-term exposure, and the production of ions is reported. The carbon nanotubes are grown using PECVD. With the gate voltage held at 24 V, the anode current increased from 0.4 /spl mu/A before exposure to H, to 4 /spl mu/A after half an hour under atomic hydrogen. Fowler-Nordheim analysis suggests a reduced work function or emitter radius and reduced emission area or reduced density of states.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133707050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619579
T. Yoshimoto, N. Yokogawa, T. Iwata
The field emission characteristics from the SiC micro powders with sharp edge are investigated. The edge of the SiC powder works as the field emitter. The emission current follows the Fowler-Nordheim relationship. An excellent emission stability in short term is confirmed. These results show that the SiC powder is a good candidate for field electron source.
{"title":"Field emission characteristics form SiC micro powders","authors":"T. Yoshimoto, N. Yokogawa, T. Iwata","doi":"10.1109/IVNC.2005.1619579","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619579","url":null,"abstract":"The field emission characteristics from the SiC micro powders with sharp edge are investigated. The edge of the SiC powder works as the field emitter. The emission current follows the Fowler-Nordheim relationship. An excellent emission stability in short term is confirmed. These results show that the SiC powder is a good candidate for field electron source.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116466359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：