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2005 International Vacuum Nanoelectronics Conference最新文献

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Damage of carbon nanotube films during field emission 场致发射过程中碳纳米管薄膜的损伤
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619618
X.H. Liang, N. Xu, Jun Chen, S. Deng
The damage effects of emission current of different levels on the carbon nanotube (CNT) films were investigated. A critical emission current density is found, which divides the different dominative mechanisms responsible for the damage of the CNT films.
研究了不同强度的发射电流对碳纳米管薄膜的损伤效应。发现了一个临界发射电流密度,划分了导致碳纳米管薄膜损伤的不同主导机制。
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引用次数: 0
Electron field emission from a single carbon nanotube: effects of anode location 单碳纳米管的电子场发射:阳极位置的影响
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619587
R.C. Smith, W. Tsang, D. Cox, S. Silva
Electron field emission from an isolated carbon nanotube (CNT) were performed in-situ in a modified scanning electron microscope, over a range of anode to CNT tip separations, D, of 1 to 60 /spl mu/m. The CNT was exposed from a CNT-polymer composite which was physically broken and examined along the broken edge. The threshold field required for an emission of 100 nA was seen to decrease from a value of 45 V/spl mu/m/sup -1/ at an anode to CNT tip separation of 1 /spl mu/m, and asymptotically approaches 4 V/spl mu/m/sup -1/ at a separation of 60 /spl mu/m. By defining the separation as (D-h) rather than D, where h is the height of the CNT, our applied electric field is E=V/(D-h). Calculation of enhancement factor using the Fowler Nordheim equation shows an increase in enhancement factor with an increasing D, and ties in well with the decrease in threshold field with increasing D. Under "far field" conditions, where D > 3h, the CNT enhancement factor is no longer dependent on D as shown by the asymptotic behaviour of threshold field, and is purely a factor of the CNT height and radius. Fowler-Nordheim analysis allowed calculation of the emission currents for given CNT to tip separation. The calculated emission current, threshold field and enhancement are comparable to that found experimentally.
在改进的扫描电子显微镜下,对分离的碳纳米管(CNT)进行了原位电子场发射,在阳极到碳纳米管尖端分离的范围内,D为1至60 /spl mu/m。碳纳米管从碳纳米管聚合物复合材料中暴露出来,该复合材料被物理破坏并沿着破碎的边缘进行检查。从阳极到碳纳米管尖端间距为1/ spl mu/m时,100 nA发射所需的阈值场从45 V/spl mu/m/sup -1/减小,并在间距为60 /spl mu/m时渐近于4 V/spl mu/m/sup -1/。通过将分离定义为(D-h)而不是D,其中h是碳纳米管的高度,我们的施加电场是E=V/(D-h)。利用Fowler Nordheim方程计算增强因子时,增强因子随D的增加而增加,与阈值场随D的增加而减小密切相关。在“远场”条件下,当D > 3h时,阈值场的渐近行为表明,碳纳米管增强因子不再依赖于D,而纯粹是碳纳米管高度和半径的一个因素。Fowler-Nordheim分析允许计算给定碳纳米管到尖端分离的发射电流。计算得到的发射电流、阈值场和增强与实验结果相当。
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引用次数: 91
Density control of carbon nanotubes for field emission display by control of catalytic layer diffusion 通过控制催化层扩散控制场发射显示用碳纳米管的密度
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619634
Y. Park, H. Kim, I. Han, A.Z. Zoulkarneev, K. Min, C.W. Baek, T. Jeong, D. Chung, S. Park, J.H. Choi, B. K. Song, H.S. Kang, J. Heo, Y.W. Jin, J.M. Kim
In this report, we have controlled the growth of multiwalled carbon nanotubes (MWNT) in terms of the populations and diameters by introducing a buffer layer between catalytic layer and amorphous silicon coated substrates. The carbon nanotubes growth with the chemical vapor deposition technique might produce interaction of the metallic catalyst with silicon layer, which could interrupt the catalytic effect. We will show how control of diffusion layer between the amorphous silicon and metal catalyst effectively control the formation of the silicide phase and consequently optimize the carbon nanotubes growth. It is performed on amorphous silicon coated glass by infrared radiation heated thermal chemical vapor deposition(CVD), using a gas mixture of carbon mono-oxide and hydrogen and Fe-Ni-Co alloy catalyst at temperatures as low as 480/spl sim/580/spl deg/C.
在本报告中,我们通过在催化层和非晶硅涂层衬底之间引入缓冲层来控制多壁碳纳米管(MWNT)在数量和直径方面的生长。化学气相沉积法生长碳纳米管可能会导致金属催化剂与硅层相互作用,从而中断催化效果。我们将展示如何控制非晶硅和金属催化剂之间的扩散层有效地控制硅化相的形成,从而优化碳纳米管的生长。在低至480/spl sim/580/spl℃的温度下,采用红外辐射加热的热化学气相沉积法(CVD)在非晶硅镀膜玻璃上进行镀膜。
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引用次数: 0
Field electron emission of nanorods of semiconductors of wide energy band gaps 宽能带隙半导体纳米棒的场电子发射
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619458
Zhibing Li, Weiliang Wang, S. Deng, N. Xu
It is shown that significant field emission from nanorods of wide band gap semiconductors is possible. The nanorod is assumed to have a thin surface layer containing a large number of localized states originating from defects. Taking SiC as an example, the electrostatic potential, charge distribution, conduction current, tunnelling current, and field enhancement are calculated. It is found that the field-induced insulator to semimetal transition is responsible for the efficient field emission from the nanorods and that field enhancement is not constant with applied fields but varies with the field and has a maximum.
结果表明,宽禁带半导体的纳米棒可以产生显著的场发射。假设纳米棒具有薄的表面层,其中包含大量源自缺陷的局域态。以SiC为例,计算了静电势、电荷分布、传导电流、隧穿电流和场增强。发现场致绝缘体到半金属的转变是纳米棒有效场发射的原因,场增强随外加场的变化而变化,并有一个最大值。
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引用次数: 4
Alternative field electron emission characteristics from graphite-insulator composite layers 石墨-绝缘体复合层的可选场电子发射特性
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619621
M. Waite, H. Bishop, M. Brierly, R. A. Tuck, W. Taylor
A novel type of emitter for a FED, the pFED is being developed for the past ten years. This emitter is formed from micron-sized silica coated with a nano-scale silica insulator. Of the commercially available graphites tested, the best performance was obtained from a 6 mum grade material. When printing such a material a coverage of ~15% cannot be exceeded without forming large clusters that disrupt subsequent processing, thus limiting the density of potential emission sites. In addition, many flakes lie flat on the surface and are unlikely to contribute to emission. In order to improve the density of emitters a thick ink approach has been investigated where the flakes are supported in a mixture of nanoparticle silica (or other insulating particles such as TiO2 or Al2O3) and submicron graphite. The resulting structure is some 1-2 mum thick with the graphite flakes and the underlying cathode connected by a semi-resistive pathway of conducting and insulating particles. The emission properties of these thick inks were comparable with those of the thin inks except that in some cases a second type of emission (Type II emission) was observed
pFED是一种新型的发射体,是近十年来不断发展起来的。该发射极由微米级的二氧化硅制成,表面涂有纳米级的二氧化硅绝缘体。在测试的市售石墨中,性能最好的是6 mum级材料。当打印这种材料时,不能超过~15%的覆盖率,否则会形成大的簇,破坏后续加工,从而限制潜在排放点的密度。此外,许多薄片平躺在表面上,不太可能造成排放。为了提高发射体的密度,研究人员研究了一种厚墨方法,在这种方法中,薄片被纳米二氧化硅(或其他绝缘颗粒,如TiO2或Al2O3)和亚微米石墨的混合物所支撑。所得到的结构约为1-2微米厚,石墨薄片和下面的阴极通过导电和绝缘颗粒的半电阻通路连接。除了在某些情况下观察到第二种类型的发射(II型发射)外,这些厚油墨的发射性质与薄油墨的发射性质相当
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引用次数: 0
Mass spectrum analysis of a L.M.A.I.Ss using a novel software by MATLAB 利用MATLAB软件对l - m - a - is进行质谱分析
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619631
T. Ganetsos, Nikolaos Laskaris, Ch. Lontos, B. Kotsos
In this work, mass spectrum analysis using a new novel software by MATLAB were tested in several liquid metal ion sources (LMAISs) such as AuGeSi, GaIN, ErFeCrNi, and AuGe. The relative intensities of the main ions of each source were determined. In AuGeSi source our results strongly point towards the co-existence of two mechanisms for the emission of doubly-charged monomer ions: direct field evaporation for the Ge/sup 2+/ and Si/sup 2+/ ions but Au/sup 2+/ is formed by the post-ionisation of Au/sup +/. In ErFeCrNi source according to Brandon's criterion Er/sup 2+/, Fe/sup 2+/ is likely to be field evaporated as doubly charged ions. Also, in AuSi alloy source Si/sup 2+/ is directly field-evaporated while Au/sup 2+/ must formed by the post-ionisation of Au/sup +/.
在这项工作中,使用MATLAB的新型软件在几种液态金属离子源(lmais)中进行了质谱分析,如AuGeSi, GaIN, ErFeCrNi和AuGe。测定了各源主离子的相对强度。在AuGeSi源中,我们的结果强烈地指向了两种双重带电单体离子发射机制的共存:Ge/sup 2+/和Si/sup 2+/离子的直接场蒸发,而Au/sup 2+/是由Au/sup +/的后电离形成的。在ErFeCrNi源中,根据Brandon准则Er/sup 2+/, Fe/sup 2+/很可能以双带电离子的形式被场蒸发。此外,在AuSi合金中,源Si/sup 2+/是直接场蒸发的,而Au/sup 2+/必须由Au/sup +/后电离形成。
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引用次数: 0
Field electron emission from a film of carbon nanopearls 碳纳米珠薄膜的场电子发射
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619583
R. Mouton, V. Semet, D. Guillot, V. Binh
Layers of non-directional carbon nanotubes (CNTs) are currently used as field emission (FE) cathodes. The main advantage for such cathodes is the low cost fabrication process using conventional film deposition techniques such as screen-printing or imprint. This advantage is unfortunately counter-balanced by the non-uniformity and low density of the field emission sites, a consequence of its mat-like deposition and the tubular geometry of the CNTs. Recently, by a chemical vapour deposition (CVD) technique, strings of nanoballs of carbon are obtained which are called carbon nanopearls. Due to its string-like structure of nanospheres, the deposited layers of the carbon nanopearls naturally present a higher density of field emission sites. As the nanopearls surface is constituted of graphene, as the carbon nanotubes apex, these field emission sites exhibit the same quality for current stability as observed with the carbon nanotubes. It has been demonstrated that a film of conditioned carbon nanopearls exhibits Fowler-Nordheim field emission behaviour, with currents of up to 50 muA readily obtainable under continuous emission in moderate vacuum. Compared to other graphitic nanostructures, in particular the tubular geometry of CNTs, the nanopearls have the advantage of presenting statistically a high density of apex areas with a small radius of curvature (~75 nm) when deposited on a planar surface. Moreover, these spheres are composed of graphitic flakes that are unclosed at the surface and therefore believed to exhibit many dangling bonds with the potential to enhance the field emission current. These two properties give the nanopearls excellent prospects as a cathode material. To investigate the field emission properties, the nanopearls were directly grown on the end of a metallic wire. The field emission was performed in a conventional field emission microscope environment, with the cathode located a few mm away from a flat screen. Systematic analysis of the field emission properties and behaviour of carbon nanopearls based cathodes were done, in particular the energy distribution measurements under different conditions. A comparative analysis with carbon nanotubes will point out the specific quality related to the nanopearl structure
非定向碳纳米管(CNTs)层目前被用作场发射(FE)阴极。这种阴极的主要优点是使用丝网印刷或压印等传统薄膜沉积技术的低成本制造过程。不幸的是,这种优势被场发射位点的不均匀性和低密度所抵消,这是其席状沉积和CNTs管状几何形状的结果。近年来,利用化学气相沉积(CVD)技术制备出了碳纳米球串,称为碳纳米珠。由于碳纳米珠的弦状结构,其沉积层自然具有较高的场发射位点密度。由于纳米珠表面由石墨烯构成,作为碳纳米管的顶点,这些场发射位点表现出与碳纳米管相同的电流稳定性。研究表明,条件碳纳米珠薄膜表现出福勒-诺德海姆场发射行为,在中等真空条件下,连续发射电流可达50 μ a。与其他石墨纳米结构相比,特别是与管状几何的碳纳米管相比,纳米珠具有统计学上的优势,当沉积在平面表面时,其尖端区域密度高,曲率半径小(~75 nm)。此外,这些球体由石墨薄片组成,石墨薄片在表面不闭合,因此被认为具有许多悬垂键,具有增强场发射电流的潜力。这两个特性使得纳米珠作为正极材料具有良好的前景。为了研究其场发射特性,将纳米珠直接生长在金属丝的末端。在传统的场发射显微镜环境中进行场发射,阴极位于距离平面屏幕几毫米的地方。系统地分析了碳纳米珠基阴极的场发射特性和行为,特别是在不同条件下的能量分布测量。通过与碳纳米管的对比分析,可以指出与纳米颗粒结构相关的具体质量
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引用次数: 1
Capacitance effect on FED system 电容对FED系统的影响
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619623
M. Xiaoyan, Lei Wei, Gu Wei, Zhang Xiaobing
This paper discusses the capacitance effect of the triode structure on the display characteristic of a field emission display. An RC circuit model between gate and cathode is adopted and results show that the effect of the capacitance and resistance on the waveform and the grayscale are estimated.
讨论了三极管结构的电容效应对场发射显示器显示特性的影响。采用栅极和阴极之间的RC电路模型,计算了电容和电阻对波形和灰度的影响。
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引用次数: 0
X-ray imaging detector silicon field emission tip array energy conversion x射线成像探测器硅场发射尖端阵列能量转换
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619480
Yu Wang, C. Hunt, Y. Diawara, T. Thorson
We present here an X-ray detector based on Si field-emission tip technology. The X-ray is first converted to EHPs in the substrate Si The electrons are emitted into vacuum from spatially-distinct nanoscale field emission tips fabricated on the back-side of the conversion layer, and detected using an imaging multi-channel plate (MCP).
本文介绍了一种基于Si场发射尖端技术的x射线探测器。x射线首先在衬底Si中转换为EHPs,电子从转换层背面制造的空间不同的纳米场发射尖端发射到真空中,并使用成像多通道板(MCP)检测。
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引用次数: 1
High stability cathode for carbon nanotube field emission display 用于碳纳米管场发射显示器的高稳定性阴极
Pub Date : 2005-07-10 DOI: 10.1109/IVNC.2005.1619604
Yongsheng Shi, C. Zhu, Chang Tian
The new composites of carbon nanotube with silicon dioxide (SiO/sub 2/) nanoparticle for FED cathode is studied. It has significantly improved emission current density property and stable emission characterization of cathode, because it has higher enhancement factor and less shield-effect by adjusting silicon nanoparticle content. The results indicated that when about 80 wt% CNT is optimum content, the current density at the electric field 2 V//spl mu/m is 56 mA/mm/sup 2/, the turn-on field of the CNTs cathode was about 0.71 V//spl mu/m. The fluctuation of emission current is less than 3% for three hours.
研究了碳纳米管与二氧化硅(SiO/ sub2 /)纳米颗粒作为FED阴极的新型复合材料。通过调节硅纳米颗粒的含量,提高了阴极的增强因子,减少了屏蔽效应,显著改善了阴极的发射电流密度性能,稳定了阴极的发射特性。结果表明,当碳纳米管含量约为80 wt%时,在2 V//spl mu/m电场下的电流密度为56 mA/mm/sup 2/, CNTs阴极的导通场约为0.71 V//spl mu/m。发射电流在3小时内波动小于3%。
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引用次数: 1
期刊
2005 International Vacuum Nanoelectronics Conference
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