Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619490
N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Namba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida
A 256 /spl times/ 192 pixels active-matrix cold electron emitter array with integrated scan driver circuits is developed. The basic structure of the electron emitter is almost the same as that of an advanced HEED (high-efficiency electron emission device) previously reported. The emission current density of the active-matrix HEED has been enhanced more than 100 times compared to that of the advanced HEED under the passive operation mode. It is demonstrated that the developed emitter can be applied to flat image sensing with a high-gain avalanche rushing amorphous photoconductor (HARP) target.
{"title":"High-current emission from active-matrix HEED (high-efficiency electron emission device) - application to image sensing","authors":"N. Negishi, T. Nakada, K. Sakemura, Y. Okuda, H. Satoh, A. Watanabe, T. Yoshikawa, K. Ogasawara, M. Namba, S. Okazaki, K. Tanioka, N. Egami, N. Koshida","doi":"10.1109/IVNC.2005.1619490","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619490","url":null,"abstract":"A 256 /spl times/ 192 pixels active-matrix cold electron emitter array with integrated scan driver circuits is developed. The basic structure of the electron emitter is almost the same as that of an advanced HEED (high-efficiency electron emission device) previously reported. The emission current density of the active-matrix HEED has been enhanced more than 100 times compared to that of the advanced HEED under the passive operation mode. It is demonstrated that the developed emitter can be applied to flat image sensing with a high-gain avalanche rushing amorphous photoconductor (HARP) target.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134541731","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619541
Jae-Hee Han, Jae Hong Park, A. Berdinsky, J. Yoo, Chong-Yun Park, H. Kim, J. J. Choi, J. Nam, C. Lee
In this report, we present field emission properties of the carbon nanotube (CNT) paste on cathode with a curved surface for MPA. The CNT paste was prepared using a mixture of multiwalled CNTs powders synthesized by chemical vapor deposition method, organic vehicles, and inorganic binders. We made use of both spin on glass (SOG) and a sensitizer as an inorganic binder and additive to the CNT paste. Then the paste was rubbed over a round cathode (diameter, D-4.3 mm) with a curved surface (a radius of curvature, R/spl sim/9.7 mm) designed specifically for our X-band (8-12 GHz) TWT-MPA.
{"title":"Field emission properties of carbon nanotube paste on cathode with a curved surface for microwave power amplifier","authors":"Jae-Hee Han, Jae Hong Park, A. Berdinsky, J. Yoo, Chong-Yun Park, H. Kim, J. J. Choi, J. Nam, C. Lee","doi":"10.1109/IVNC.2005.1619541","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619541","url":null,"abstract":"In this report, we present field emission properties of the carbon nanotube (CNT) paste on cathode with a curved surface for MPA. The CNT paste was prepared using a mixture of multiwalled CNTs powders synthesized by chemical vapor deposition method, organic vehicles, and inorganic binders. We made use of both spin on glass (SOG) and a sensitizer as an inorganic binder and additive to the CNT paste. Then the paste was rubbed over a round cathode (diameter, D-4.3 mm) with a curved surface (a radius of curvature, R/spl sim/9.7 mm) designed specifically for our X-band (8-12 GHz) TWT-MPA.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133166375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619501
V. A. Fedirko, S. Polyakov, N. A. Djuzhev
This paper reports on a theoretical investigation and numerical simulation of hot electron transport in a wedge n-type silicon field microemitter with a nano-edge. The emission characteristics of a cell have been simulated using highly efficient parallel processing. This study shows that electron heating drastically affects field emission from a silicon microcathode and impact ionization may contribute markedly to electron transport. Heavy local electron heating may also result in cathode edge instability due to intensive energy exchange between the electron gas and the lattice.
{"title":"Numerical simulation of field emission from a semiconductor wedge nanotip","authors":"V. A. Fedirko, S. Polyakov, N. A. Djuzhev","doi":"10.1109/IVNC.2005.1619501","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619501","url":null,"abstract":"This paper reports on a theoretical investigation and numerical simulation of hot electron transport in a wedge n-type silicon field microemitter with a nano-edge. The emission characteristics of a cell have been simulated using highly efficient parallel processing. This study shows that electron heating drastically affects field emission from a silicon microcathode and impact ionization may contribute markedly to electron transport. Heavy local electron heating may also result in cathode edge instability due to intensive energy exchange between the electron gas and the lattice.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132979411","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619613
J. Shaw, D. Hsu
Field emission in hydrogen at pressures near 10/sup -4/ torr increases the current produced by carbon nanotube field emitter arrays. In this paper, a more detailed current and energy analysis including the effects of cracking the hydrogen using a hot filament, long-term exposure, and the production of ions is reported. The carbon nanotubes are grown using PECVD. With the gate voltage held at 24 V, the anode current increased from 0.4 /spl mu/A before exposure to H, to 4 /spl mu/A after half an hour under atomic hydrogen. Fowler-Nordheim analysis suggests a reduced work function or emitter radius and reduced emission area or reduced density of states.
{"title":"Field emission from carbon nanotube FEAs in hydrogen","authors":"J. Shaw, D. Hsu","doi":"10.1109/IVNC.2005.1619613","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619613","url":null,"abstract":"Field emission in hydrogen at pressures near 10/sup -4/ torr increases the current produced by carbon nanotube field emitter arrays. In this paper, a more detailed current and energy analysis including the effects of cracking the hydrogen using a hot filament, long-term exposure, and the production of ions is reported. The carbon nanotubes are grown using PECVD. With the gate voltage held at 24 V, the anode current increased from 0.4 /spl mu/A before exposure to H, to 4 /spl mu/A after half an hour under atomic hydrogen. Fowler-Nordheim analysis suggests a reduced work function or emitter radius and reduced emission area or reduced density of states.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133707050","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619611
B. Satyanarayana
A study on field emission from carbon nanotubes is reported. The CNTs are selectively grown on patterned silicon dioxide on silicon substrates using chemical vapour deposition. To understand the influence of the oxide layer thickness on the associated field emission characteristics, the oxide layer thickness is varied from 15 nm to 100 nm. Field emission measurements are carried out in a parallel plate configuration, with an anode-cathode spacing of 100 /spl mu/m, an anode of 1 mm diameter and a vacuum of the order of 10/sup -7/ Torr. Results show that carbon nanotubes grown on patterned silicon dioxide layer exhibit reasonable electron emission characteristics. The emission threshold field varies from 1.9 V//spl mu/m to 3.25 V//spl mu/m as the oxide thickness is increased. The emission behaviour seems to have a linear relation with the oxide thickness in the measured range of the samples. The influence of the oxide layer thickness is further discussed on the basis of Raman measurement.
{"title":"Field emission from aligned carbon nanotubes grown on patterned oxide layers","authors":"B. Satyanarayana","doi":"10.1109/IVNC.2005.1619611","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619611","url":null,"abstract":"A study on field emission from carbon nanotubes is reported. The CNTs are selectively grown on patterned silicon dioxide on silicon substrates using chemical vapour deposition. To understand the influence of the oxide layer thickness on the associated field emission characteristics, the oxide layer thickness is varied from 15 nm to 100 nm. Field emission measurements are carried out in a parallel plate configuration, with an anode-cathode spacing of 100 /spl mu/m, an anode of 1 mm diameter and a vacuum of the order of 10/sup -7/ Torr. Results show that carbon nanotubes grown on patterned silicon dioxide layer exhibit reasonable electron emission characteristics. The emission threshold field varies from 1.9 V//spl mu/m to 3.25 V//spl mu/m as the oxide thickness is increased. The emission behaviour seems to have a linear relation with the oxide thickness in the measured range of the samples. The influence of the oxide layer thickness is further discussed on the basis of Raman measurement.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122347932","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619619
Y.H. Chen, W.Y. Lin, C. Tseng, G.D. Su
In this paper, we report the non-dispersive infrared (IR) for detecting the vacuum level inside carbon-nanotube field-emission displays (CNT-FED). Many gas molecules, such as moisture, can be detected by using infrared absorption characteristics. Through the knowing concentration of the targeted gas from the IR absorption, the pressure of the gas inside the vacuum-sealed FED panels can be calculated by ideal gas law. Measurement based on this principle offer advantages including low cross talk and high sensitivity. The calculated detection limit for the carbon dioxide (CO/sub 2/) is down to 2/spl times//sup 10-6/ torr with 5 cm optical path.
{"title":"Detection of vacuum level inside sealed field emission displays by infra red spectroscopy","authors":"Y.H. Chen, W.Y. Lin, C. Tseng, G.D. Su","doi":"10.1109/IVNC.2005.1619619","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619619","url":null,"abstract":"In this paper, we report the non-dispersive infrared (IR) for detecting the vacuum level inside carbon-nanotube field-emission displays (CNT-FED). Many gas molecules, such as moisture, can be detected by using infrared absorption characteristics. Through the knowing concentration of the targeted gas from the IR absorption, the pressure of the gas inside the vacuum-sealed FED panels can be calculated by ideal gas law. Measurement based on this principle offer advantages including low cross talk and high sensitivity. The calculated detection limit for the carbon dioxide (CO/sub 2/) is down to 2/spl times//sup 10-6/ torr with 5 cm optical path.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122924208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619492
B. Coll, K. Dean, E. Howard, E. Jaskie, S. Johson, M. Johson, D. C. Jordan, S.M. Smith, Yi Wei
Nanotube emissive displays (NED) are new field emission displays, designed and built at Motorola labs, with particular attention devoted to the design of the field emission based CNT cathodes and the use of simple manufacturing processes. Specific elements in the device structure enable NED to deliver CRT-like performance characteristics including: high brightness and contrast, rapid video response, unrestricted viewing angle and excellent color capabilities. The device structure of CNT-based NED consists of a phosphor-coated anode, an electron emitting cathode, and a spacer/frame assembly.
{"title":"Color nano emissive displays for large area HDTV","authors":"B. Coll, K. Dean, E. Howard, E. Jaskie, S. Johson, M. Johson, D. C. Jordan, S.M. Smith, Yi Wei","doi":"10.1109/IVNC.2005.1619492","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619492","url":null,"abstract":"Nanotube emissive displays (NED) are new field emission displays, designed and built at Motorola labs, with particular attention devoted to the design of the field emission based CNT cathodes and the use of simple manufacturing processes. Specific elements in the device structure enable NED to deliver CRT-like performance characteristics including: high brightness and contrast, rapid video response, unrestricted viewing angle and excellent color capabilities. The device structure of CNT-based NED consists of a phosphor-coated anode, an electron emitting cathode, and a spacer/frame assembly.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117253361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619637
H. Koops
The principle of the Orbitron pump is described. Its miniaturization is simulated. Field emitters operating in mbar vacuum levels, with short emitter-extractor distance and an incorporated ion mirror are advantageous compared to heated electron emitters. This miniaturized electron gun requires 16 nA of current but can be supplied with up to 400 /spl mu/A of ionizing current. Employing micromechanical technologies, the Orbitron pump can be built and integrated into a MEMS device to supply UHV in a volume of <1 Mio /spl mu/m/sup 3/ on a chip. Connecting the pump with a load vacuum volume, miniature UHV requiring devices can be pumped down on chip and operated by only electrical controls.
{"title":"A miniaturized Orbitron pump for MEMS applications","authors":"H. Koops","doi":"10.1109/IVNC.2005.1619637","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619637","url":null,"abstract":"The principle of the Orbitron pump is described. Its miniaturization is simulated. Field emitters operating in mbar vacuum levels, with short emitter-extractor distance and an incorporated ion mirror are advantageous compared to heated electron emitters. This miniaturized electron gun requires 16 nA of current but can be supplied with up to 400 /spl mu/A of ionizing current. Employing micromechanical technologies, the Orbitron pump can be built and integrated into a MEMS device to supply UHV in a volume of <1 Mio /spl mu/m/sup 3/ on a chip. Connecting the pump with a load vacuum volume, miniature UHV requiring devices can be pumped down on chip and operated by only electrical controls.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116771641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619508
J. Xanthakis, R. Forbes
We argue that the granularity of the screening charge distribution at or in the film surface may dominate the physics of field penetration into hopping conductors (including a-c:H films) and that a re-think of all related modelling looks necessary.
{"title":"Field screening by amorphous carbon thin films","authors":"J. Xanthakis, R. Forbes","doi":"10.1109/IVNC.2005.1619508","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619508","url":null,"abstract":"We argue that the granularity of the screening charge distribution at or in the film surface may dominate the physics of field penetration into hopping conductors (including a-c:H films) and that a re-think of all related modelling looks necessary.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114178788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2005-07-10DOI: 10.1109/IVNC.2005.1619527
T. Sato, M. Saida, K. Horikawa, K. Adachi, M. Nagao, S. Kanemaru, S. Yamamoto, M. Sasali
The STM/FE images in a nanometer scale were successfully obtained by using an STM for the first time. The emission of electrons from grain boundaries of polycrystalline HfC films also reported, where work function is larger than that on the grains.
{"title":"Nanometer-scale imaging of field emission current from HfC thin films","authors":"T. Sato, M. Saida, K. Horikawa, K. Adachi, M. Nagao, S. Kanemaru, S. Yamamoto, M. Sasali","doi":"10.1109/IVNC.2005.1619527","DOIUrl":"https://doi.org/10.1109/IVNC.2005.1619527","url":null,"abstract":"The STM/FE images in a nanometer scale were successfully obtained by using an STM for the first time. The emission of electrons from grain boundaries of polycrystalline HfC films also reported, where work function is larger than that on the grains.","PeriodicalId":121164,"journal":{"name":"2005 International Vacuum Nanoelectronics Conference","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-07-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114336693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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