GaInN layers are often grown on a sapphire substrate, with a low-temperature-deposited AlN layer and a thick GaN buffer layer. High-resolution X-ray diffraction experiments were conducted on BL20-B at the Photon Factory (Tsukuba, Japan), to investigate the structural quality of the AlN and GaN layers. Reciprocal space mapping was used to study samples ar each stage of the growth process and for various layer thicknesses. Two analysis techniques were compared. The first utilised broadening of reflections in reciprocal space, and the second was based on statistical diffraction theory (SDT). Both techniques yield information about the mosaic-blocks and layer thicknesses: however, simulations based on SDT give information on strain and tilt distribution within the AlN layer, evident in off centre, non-symmetric, peaks. This suggests a possible mechanism by which AlN buffer layers can be exploited to improve device characteristics. Our work also demonstrates the efficacy of SDT for the analysis of these structures.
{"title":"Analysis of GaN/AlN buffer layers grown on sapphire substrates via statistical diffraction theory","authors":"S. Mudie, K. Pavlov, M. Morgan, Y. Takeda, M. Tabuchi, J. Hester","doi":"10.1109/COMMAD.2002.1237205","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237205","url":null,"abstract":"GaInN layers are often grown on a sapphire substrate, with a low-temperature-deposited AlN layer and a thick GaN buffer layer. High-resolution X-ray diffraction experiments were conducted on BL20-B at the Photon Factory (Tsukuba, Japan), to investigate the structural quality of the AlN and GaN layers. Reciprocal space mapping was used to study samples ar each stage of the growth process and for various layer thicknesses. Two analysis techniques were compared. The first utilised broadening of reflections in reciprocal space, and the second was based on statistical diffraction theory (SDT). Both techniques yield information about the mosaic-blocks and layer thicknesses: however, simulations based on SDT give information on strain and tilt distribution within the AlN layer, evident in off centre, non-symmetric, peaks. This suggests a possible mechanism by which AlN buffer layers can be exploited to improve device characteristics. Our work also demonstrates the efficacy of SDT for the analysis of these structures.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"582 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122692017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO/sub 2/ ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO/sub 2//Si/SiO/sub 2/ quantum wells was observed for the samples with 1.1 nm to 2.7 nm thick Si. Luminescent peak energy varies from 730 nm to 920 nm without interface-mediated luminescence.
{"title":"Optical transitions from SiO/sub 2//crystalline Si/SiO/sub 2/ quantum wells","authors":"E. Cho, P. Reece, M. Green, R. Corkish, M. Gal","doi":"10.1109/COMMAD.2002.1237244","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237244","url":null,"abstract":"Crystalline silicon single quantum wells were fabricated by high temperature thermal oxidation of ELTRAN silicon-on-insulator (SOI) wafers. The Si layer thickness enclosed by thermal SiO/sub 2/ ranges from 1.1 to 4.3 nm, measured by high resolution transmission electron microscopy (HRTEM). Si thickness dependent luminescence in SiO/sub 2//Si/SiO/sub 2/ quantum wells was observed for the samples with 1.1 nm to 2.7 nm thick Si. Luminescent peak energy varies from 730 nm to 920 nm without interface-mediated luminescence.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127730361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An InP/InGaAs double heterojunction bipolar transistor (DHBT) with an undoped emitter tunneling barrier and composite collector structure is fabricated and studied. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an appropriate tunneling barrier thickness of 150 /spl Aring/ is employed to achieve good I-V characteristics. In addition, InGaAsP compositionally step-graded layers are introduced between the p/sup +/-InGaAs base and n/sup -/-InP collector. By modulating the bandgap energy of InGaAsP, the large base-collector (B-C) potential spike can be divided into several small spikes with lower barrier height. The 4000 /spl Aring/ InP collectors with InP/InGaAsP/InGaAs step-graded junction achieve high breakdown voltages of 14.6 V. A small offset voltage of 80 mV and a small saturation voltage of 1.8 V at the collector current level of 5 mA are obtained. Prior to the current gain fall-off caused by the self-heating effect, the step-graded DHBT has the current gain as high as 118 H at I/sub C/ = 30 mA and V/sub CE/ = 3V.
{"title":"On the InP/InGaAs double heterojunction bipolar transistor (DHBT) with emitter tunneling barrier and composite collector structure","authors":"J.Y. Chen, K.W. Lin, C. Chen, H. Chuang, C. Kao, W. Liu","doi":"10.1109/COMMAD.2002.1237264","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237264","url":null,"abstract":"An InP/InGaAs double heterojunction bipolar transistor (DHBT) with an undoped emitter tunneling barrier and composite collector structure is fabricated and studied. Due to the mass filtering effect for holes, a thin InP tunneling barrier can be used to replace the wide-gap emitter. Experimentally, an appropriate tunneling barrier thickness of 150 /spl Aring/ is employed to achieve good I-V characteristics. In addition, InGaAsP compositionally step-graded layers are introduced between the p/sup +/-InGaAs base and n/sup -/-InP collector. By modulating the bandgap energy of InGaAsP, the large base-collector (B-C) potential spike can be divided into several small spikes with lower barrier height. The 4000 /spl Aring/ InP collectors with InP/InGaAsP/InGaAs step-graded junction achieve high breakdown voltages of 14.6 V. A small offset voltage of 80 mV and a small saturation voltage of 1.8 V at the collector current level of 5 mA are obtained. Prior to the current gain fall-off caused by the self-heating effect, the step-graded DHBT has the current gain as high as 118 H at I/sub C/ = 30 mA and V/sub CE/ = 3V.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116134147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dielectric thin films of strontium zirconate doped with 5 mol% calcium were prepared on Pt/Ti/SiO/sub 2//Si substrate by the metallo-organic decomposition (MOD) wet chemical technology followed by annealing at different temperatures in flowing oxygen atmosphere. Those prepared Sr/sub 0.95/Ca/sub 0.05/ZrO/sub 3/ thin films were investigated using differential thermal analysis (DTA) and thermogravimetric analysis (TGA), X-ray diffraction (XRD), UV optical reflection spectroscopic measurement, and sweeping frequency dependence of the dielectric constants and losses to study their structural development, optical band gaps, and dielectric properties. The study is aimed at seeking a possibility for an application in the area of high-K dielectrics.
{"title":"Metallo-organic decomposition derived Sr/sub 0.95/Ca/sub 0.05/ZrO/sub 3/ oxide thin films on Pt/Ti/SiO/sub 2//Si substrate","authors":"Changhong Chen, Weiguang Zhu, T. Yu, Xiaofeng Chen, Yuekang Lu, R. Krishnan","doi":"10.1109/COMMAD.2002.1237219","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237219","url":null,"abstract":"Dielectric thin films of strontium zirconate doped with 5 mol% calcium were prepared on Pt/Ti/SiO/sub 2//Si substrate by the metallo-organic decomposition (MOD) wet chemical technology followed by annealing at different temperatures in flowing oxygen atmosphere. Those prepared Sr/sub 0.95/Ca/sub 0.05/ZrO/sub 3/ thin films were investigated using differential thermal analysis (DTA) and thermogravimetric analysis (TGA), X-ray diffraction (XRD), UV optical reflection spectroscopic measurement, and sweeping frequency dependence of the dielectric constants and losses to study their structural development, optical band gaps, and dielectric properties. The study is aimed at seeking a possibility for an application in the area of high-K dielectrics.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115514971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
An interesting n/sup +/-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied. In the n/sup +/-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave dc performances with flat and wide operation regime.
{"title":"On the n/sup +/-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET)","authors":"H. Chuang, K.W. Lin, C. Chen, J.Y. Chen, C. Kao, W. Liu","doi":"10.1109/COMMAD.2002.1237265","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237265","url":null,"abstract":"An interesting n/sup +/-InGaAs/n-GaAs composite doped channel heterostructure field-effect transistor (CDC-HFET) is fabricated and studied. In the n/sup +/-InGaAs/n-GaAs CDC structure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Experimentally, the studied device shows good DC and microwave dc performances with flat and wide operation regime.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116090229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In/sub 0.5/Ga/sub 0.5/As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these dots are strongly affected by the growth parameters. The growth rate and V/III affect the density of the dots. Growth interrupts without AsH/sub 3/ are found to cause a bimodal distribution in the dots, however a small amount of AsH/sub 3/ during the interrupt can suppress the formation of larger dots. A thin layer of GaP below the In/sub 0.5/Ga/sub 0.5/As quantum dots changes the formation of the dots. The dots are smaller in width and height. The luminescence from these dots is blueshifted due to interdiffusion between the dots and the GaP buffer layer.
{"title":"Growth of InGaAs quantum dots by metal organic chemical vapour deposition","authors":"P. Lever, H. Tan, C. Jagadish","doi":"10.1109/COMMAD.2002.1237252","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237252","url":null,"abstract":"In/sub 0.5/Ga/sub 0.5/As quantum dots have been grown by metal-organic chemical vapour deposition (MOCVD). The size and density of these dots are strongly affected by the growth parameters. The growth rate and V/III affect the density of the dots. Growth interrupts without AsH/sub 3/ are found to cause a bimodal distribution in the dots, however a small amount of AsH/sub 3/ during the interrupt can suppress the formation of larger dots. A thin layer of GaP below the In/sub 0.5/Ga/sub 0.5/As quantum dots changes the formation of the dots. The dots are smaller in width and height. The luminescence from these dots is blueshifted due to interdiffusion between the dots and the GaP buffer layer.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114706369","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We investigated self-organized GaN nanotips for the cold cathode application, which was fabricated by reactive ion etching (RIE). The density of the nanotips fabricated by RIE was approximately 2 /spl times/ 10 cm/sup -2/. Its height was approximately 200 nm. It is observed that the distribution of the nanotips fabricated on epitaxial lateral over growth (ELO) GaN is uniform in spite of window and mask region on ELO GaN surface. This fact supports that the formation mechanism of nanotips is attributed to a masking effect of nanometer-scale SiO/sub 2/ masks not to the threading dislocations in the GaN layer. Field emission from the GaN nanotips was observed. The current I was 1 /spl mu/A at 900 V. The field enhancement factor /spl beta/d, which is related to the top structure of the emitter and is the product of the field conversion factor /spl beta/ and the sample-anode gap d, was estimated to be 460 from the Fowler-Nordheim (F-N) plot.
{"title":"Self-organized GaN nanotips for cold cathode application","authors":"Y. Terada, H. Yoshida, H. Miyake, K. Hiramatsu","doi":"10.1109/COMMAD.2002.1237203","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237203","url":null,"abstract":"We investigated self-organized GaN nanotips for the cold cathode application, which was fabricated by reactive ion etching (RIE). The density of the nanotips fabricated by RIE was approximately 2 /spl times/ 10 cm/sup -2/. Its height was approximately 200 nm. It is observed that the distribution of the nanotips fabricated on epitaxial lateral over growth (ELO) GaN is uniform in spite of window and mask region on ELO GaN surface. This fact supports that the formation mechanism of nanotips is attributed to a masking effect of nanometer-scale SiO/sub 2/ masks not to the threading dislocations in the GaN layer. Field emission from the GaN nanotips was observed. The current I was 1 /spl mu/A at 900 V. The field enhancement factor /spl beta/d, which is related to the top structure of the emitter and is the product of the field conversion factor /spl beta/ and the sample-anode gap d, was estimated to be 460 from the Fowler-Nordheim (F-N) plot.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122019611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The /spl delta/-doped GaAs/Al/sub x/Ga/sub 1-x/As superlattice samples are grown by molecular beam epitaxy. The current- voltage, l(V). characteristics of the samples are measured at 1.5 K. The I(V) curves show the current-plateaus corresponding to the formation of the low- and high-electric field domains due to the ground state resonance and the first excited state to ground state resonance, respectively, in the quantum well. In addition to the typical sawtooth-like current branches, a new small current peak is observed accompanying each sawtooth-like current branch in our samples. Possible origins of the additional peaks are discussed in terms of cross-domain boundary tunneling and phonon emissions.
{"title":"The current-voltage characteristics of weakly coupled /spl delta/-doped GaAs/Al/sub x/Ga/sub 1-x/As superlattices","authors":"J. Wang, G. Hai, J. Dai, H. He, X.G. Liang, Y.Q. Wang, W. Ge, H. Liu, Z. Wasilewski","doi":"10.1109/COMMAD.2002.1237291","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237291","url":null,"abstract":"The /spl delta/-doped GaAs/Al/sub x/Ga/sub 1-x/As superlattice samples are grown by molecular beam epitaxy. The current- voltage, l(V). characteristics of the samples are measured at 1.5 K. The I(V) curves show the current-plateaus corresponding to the formation of the low- and high-electric field domains due to the ground state resonance and the first excited state to ground state resonance, respectively, in the quantum well. In addition to the typical sawtooth-like current branches, a new small current peak is observed accompanying each sawtooth-like current branch in our samples. Possible origins of the additional peaks are discussed in terms of cross-domain boundary tunneling and phonon emissions.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126578118","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Most of the growth of GaN epilayers by MOCVD method reported to date was carried out at growth temperature above 1000/spl deg/C on sapphire substrates. We have successfully grown GaN by plasma assisted MOCVD (PA-MOCVD) method at temperature between 560/spl deg/C to 650/spl deg/C. In this paper we report an attempt to fabricate Au/n-GaN Schottky diode grown on Si(111) by PA-MOCVD method. The GaN films were grown at temperatures of 625/spl deg/C and 650/spl deg/C using trimethylgallium (TMGa) and nitrogen plasma. The diode is a concentric type using aluminum as ohmic contact and gold as Schottky contact. Electrical characterizations were performed by I-V and C-V measurements. The barrier heights determined from I-V measurements are 0.44 eV and 0.49 eV, for Schottky diodes grown at 625/spl deg/C and 650/spl deg/C, respectively. The ideality factors are 4.5 and 5.6 indicate that tunneling as the main mechanism of electron transport through the barrier. This mechanism is typical for moderately to highly doped semiconductor, as confirmed from C-V measurement.
{"title":"Au/n-GaN Schottky diode grown on Si(111) by plasma assisted MOCVD","authors":"M. Budiman, H. Sutanto, N. Wendri, E. Supriyanto, Sugianto, P. Arifin, M. Barmawi","doi":"10.1109/COMMAD.2002.1237200","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237200","url":null,"abstract":"Most of the growth of GaN epilayers by MOCVD method reported to date was carried out at growth temperature above 1000/spl deg/C on sapphire substrates. We have successfully grown GaN by plasma assisted MOCVD (PA-MOCVD) method at temperature between 560/spl deg/C to 650/spl deg/C. In this paper we report an attempt to fabricate Au/n-GaN Schottky diode grown on Si(111) by PA-MOCVD method. The GaN films were grown at temperatures of 625/spl deg/C and 650/spl deg/C using trimethylgallium (TMGa) and nitrogen plasma. The diode is a concentric type using aluminum as ohmic contact and gold as Schottky contact. Electrical characterizations were performed by I-V and C-V measurements. The barrier heights determined from I-V measurements are 0.44 eV and 0.49 eV, for Schottky diodes grown at 625/spl deg/C and 650/spl deg/C, respectively. The ideality factors are 4.5 and 5.6 indicate that tunneling as the main mechanism of electron transport through the barrier. This mechanism is typical for moderately to highly doped semiconductor, as confirmed from C-V measurement.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125205635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We demonstrate up-converted light emission from an asymmetric double quantum well (QW). Carriers in the wide QW, which are photogenerated by a long wavelength light, are transferred and collected into the adjacent narrow quantum well by using /spl Gamma/-X-/spl Gamma/ electron transfer and simultaneous hole tunneling, thus generating short wavelength light emission.
我们证明了非对称双量子阱(QW)的上转换光发射。宽量子阱中由长波光产生的载流子，通过/spl伽玛/- x -/spl伽玛/电子转移和同步空穴隧穿将载流子转移和收集到相邻的窄量子阱中，从而产生短波长的光发射。
{"title":"Up-conversion by using /spl Gamma/-X-/spl Gamma/ carrier transport in asymmetric double quantum well systems","authors":"M. Sato, Y. Hirose, C. Domoto, T. Aida, M. Hosoda","doi":"10.1109/COMMAD.2002.1237247","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237247","url":null,"abstract":"We demonstrate up-converted light emission from an asymmetric double quantum well (QW). Carriers in the wide QW, which are photogenerated by a long wavelength light, are transferred and collected into the adjacent narrow quantum well by using /spl Gamma/-X-/spl Gamma/ electron transfer and simultaneous hole tunneling, thus generating short wavelength light emission.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122957213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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