Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237293
K. Stewart, M. Buda, J. Wong-Leung, L. Fu, C. Jagadish, A. Stiff-Roberts, P. Bhattacharya
In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900/spl deg/C for 60 s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.
{"title":"Strain relaxation in rapid thermally annealed InAs/GaAs quantum dot infrared photodetectors","authors":"K. Stewart, M. Buda, J. Wong-Leung, L. Fu, C. Jagadish, A. Stiff-Roberts, P. Bhattacharya","doi":"10.1109/COMMAD.2002.1237293","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237293","url":null,"abstract":"In this paper the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grown quantum dot infrared detector (QDIP) device is studied. Temperatures in the range of 700 - 900/spl deg/C for 60 s, typical of ion implantation induced interdiffusion, are used. Double crystal X-ray diffraction (DCXRD), photoluminescence (PL), cross sectional transmission electron microscopy (XTEM) and device electrical characteristics were used to monitor changes due to RTA. The QDIP devices had good PL signal which improved upon annealing. However the device performance after RTA was poor and DCXRD and XTEM results clearly indicate that strain relaxation is occurring. The role of strain relaxation on optical and electrical properties has been discussed.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"10 7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131706108","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237249
R. P. Taylor, R. Newbury, A. Micolich, A. Davies, T. Fromhold, H. Linke, L. Macks, W. Tribe, E. Linfield, D. Ritchie, T. P. Martin
Semiconductor billiard systems are used to investigate fractal conductance fluctuations and their dependence on two crucial parameters of ballistic transport - the shape and energy profile of the device walls.
利用半导体台球系统研究了分形电导波动及其对弹道输运的两个关键参数-器件壁的形状和能量分布的依赖。
{"title":"Generic fractal behaviour of ballistic devices","authors":"R. P. Taylor, R. Newbury, A. Micolich, A. Davies, T. Fromhold, H. Linke, L. Macks, W. Tribe, E. Linfield, D. Ritchie, T. P. Martin","doi":"10.1109/COMMAD.2002.1237249","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237249","url":null,"abstract":"Semiconductor billiard systems are used to investigate fractal conductance fluctuations and their dependence on two crucial parameters of ballistic transport - the shape and energy profile of the device walls.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123367611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237266
J. Tsai
Novel InGaP/GaAs co-integrated structures consisting of a heterojunction bipolar transistor and a field effect transistor are fabricated and demonstrated. For the HBT, the confinement effect for holes is increased and the potential spike at emitter-base (E-B) heterojunction is reduced significantly owing to the presence of a /spl delta/-doped sheet at the InGaP/GaAs junction. High current gain and low offset voltage are achieved. On the other hand, for a FET, an undoped InGaP gate layer is used to increase gate breakdown voltage, and a thin and heavy-doped GaAs channel is shown to enhance current drivability, transconductance, and linearity. For this structure, a wide gate voltage range larger than 3 V with the transconductance larger 150 mS/mm is obtained.
{"title":"Integrated fabrication of InGaP/GaAs /spl delta/-doped heterojunction bipolar transistor and doped-channel field effect transistor","authors":"J. Tsai","doi":"10.1109/COMMAD.2002.1237266","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237266","url":null,"abstract":"Novel InGaP/GaAs co-integrated structures consisting of a heterojunction bipolar transistor and a field effect transistor are fabricated and demonstrated. For the HBT, the confinement effect for holes is increased and the potential spike at emitter-base (E-B) heterojunction is reduced significantly owing to the presence of a /spl delta/-doped sheet at the InGaP/GaAs junction. High current gain and low offset voltage are achieved. On the other hand, for a FET, an undoped InGaP gate layer is used to increase gate breakdown voltage, and a thin and heavy-doped GaAs channel is shown to enhance current drivability, transconductance, and linearity. For this structure, a wide gate voltage range larger than 3 V with the transconductance larger 150 mS/mm is obtained.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":" 30","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113952141","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237215
Dengyuan Song, B. Guo, A. Aberle
ZnO:Al/p-Si heterojunctions were fabricated by rf magnetron sputtering of ZnO films onto p-type (100) Si wafer substrates. The structural and electrical properties of the heterojunctions were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. C-V results indicate an abrupt interface and a band bending of 0.35 eV in the silicon. The dark forward current density-voltage-temperature (J-V-T) characteristics were measured and analysed to determine the dominant current transport mechanism in the heterojunction. Our experiments suggest that the dark forward current is dominated by a multi-step tunneling process in the silicon space charge region, whereas the reverse current is found to be mainly due to thermal carrier generation in this region.
{"title":"Heterojunction properties of ZnO:Al/p-Si prepared by rf magnetron sputtering","authors":"Dengyuan Song, B. Guo, A. Aberle","doi":"10.1109/COMMAD.2002.1237215","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237215","url":null,"abstract":"ZnO:Al/p-Si heterojunctions were fabricated by rf magnetron sputtering of ZnO films onto p-type (100) Si wafer substrates. The structural and electrical properties of the heterojunctions were investigated by current-voltage (I-V) and capacitance-voltage (C-V) measurements. C-V results indicate an abrupt interface and a band bending of 0.35 eV in the silicon. The dark forward current density-voltage-temperature (J-V-T) characteristics were measured and analysed to determine the dominant current transport mechanism in the heterojunction. Our experiments suggest that the dark forward current is dominated by a multi-step tunneling process in the silicon space charge region, whereas the reverse current is found to be mainly due to thermal carrier generation in this region.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134304682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237299
M. Wintrebert-Fouquet
An InP/In/sub 0.53/Ga/sub 0.47/As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In/sub 0.53/Ga/sub 0.47/As/AlAs resonant tunnelling diode which achieves a current density of 15 kA/cm/sup 2 /at a peak voltage of 1.6 V for a peak-to-valley ratio of 39:1 is integrated at the emitter of a double heterojunction InGaAs/InP bipolar transistor. Results are presented for 3 /spl mu/m /spl times/ 3 /spl mu/m emitter size integrated device. A negative differential shape due to the resonant tunnelling effect at the emitter controlled by a 3.4 /spl mu/A base current is observed in the common-emitter current-voltage characteristics at room temperature with a current density of 9.2 kA/cm/sup 2 /and a peak-to-valley ratio of 12:1. The maximum current gain of the device is 220. However beyond the resonant tunnelling peak, the resonant tunnelling transistor presents a bistability where the collector current collapses dramatically, the transistor characteristics are recovered by increasing the collector-emitter voltage.
{"title":"Design, fabrication and characterisation of an InP resonant tunneling bipolar transistor with double heterojunctions","authors":"M. Wintrebert-Fouquet","doi":"10.1109/COMMAD.2002.1237299","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237299","url":null,"abstract":"An InP/In/sub 0.53/Ga/sub 0.47/As resonant tunnelling bipolar transistor with double heterojunction grown by molecular beam epitaxy and fabricated by selective wet chemical etching is presented. An In/sub 0.53/Ga/sub 0.47/As/AlAs resonant tunnelling diode which achieves a current density of 15 kA/cm/sup 2 /at a peak voltage of 1.6 V for a peak-to-valley ratio of 39:1 is integrated at the emitter of a double heterojunction InGaAs/InP bipolar transistor. Results are presented for 3 /spl mu/m /spl times/ 3 /spl mu/m emitter size integrated device. A negative differential shape due to the resonant tunnelling effect at the emitter controlled by a 3.4 /spl mu/A base current is observed in the common-emitter current-voltage characteristics at room temperature with a current density of 9.2 kA/cm/sup 2 /and a peak-to-valley ratio of 12:1. The maximum current gain of the device is 220. However beyond the resonant tunnelling peak, the resonant tunnelling transistor presents a bistability where the collector current collapses dramatically, the transistor characteristics are recovered by increasing the collector-emitter voltage.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116632012","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237262
W. Sul, Hyo-Jong Han, Byoung‐Ok Lim, Bok-Hyoung Lee, Sung-Dae Lee, Mi-Ra Kim, Sam-Dong Kim, J. Rhee
In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0.1 /spl mu/m gate length PHEMT's passivated by either the conventional Si/sub 3/N/sub 4/ or the low dielectric constant benzo-cyclo-butene (BCB)layers. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si/sub 3/N/sub 4/, whereas the DC and other RF properties were not significantly affected by the passivation materials.
{"title":"Analysis on the low-k benzo-cyclo-butene passivation of pseudomorphic high electron mobility transistors","authors":"W. Sul, Hyo-Jong Han, Byoung‐Ok Lim, Bok-Hyoung Lee, Sung-Dae Lee, Mi-Ra Kim, Sam-Dong Kim, J. Rhee","doi":"10.1109/COMMAD.2002.1237262","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237262","url":null,"abstract":"In pseudomorphic high electron mobility transistors (PHEMT's), surface passivation for the devices is very important for ensuring the DC and RF performances as well as the reliability. We performed the comparative study on the DC, RF and noise characteristics of the 0.1 /spl mu/m gate length PHEMT's passivated by either the conventional Si/sub 3/N/sub 4/ or the low dielectric constant benzo-cyclo-butene (BCB)layers. The noise performance of the BCB passivation for the PHEMT's was much superior to that of the Si/sub 3/N/sub 4/, whereas the DC and other RF properties were not significantly affected by the passivation materials.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"T153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125650589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237318
J. Wehner, M. Martyniuk, J. Antoszewski, C. Musca, J. Dell, L. Faraone
Hyperspectral imaging using micro-electro-mechanical systems (MEMS) is investigated. A Fabry-Perot cavity is created using a silicon nitride membrane suspended over a variable length air gap, to support a distributed Bragg reflector. Models of membrane behaviour and reflector optical performance are given.
{"title":"Optical and membrane modelling in a MEMS hyperspectral imaging system","authors":"J. Wehner, M. Martyniuk, J. Antoszewski, C. Musca, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2002.1237318","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237318","url":null,"abstract":"Hyperspectral imaging using micro-electro-mechanical systems (MEMS) is investigated. A Fabry-Perot cavity is created using a silicon nitride membrane suspended over a variable length air gap, to support a distributed Bragg reflector. Models of membrane behaviour and reflector optical performance are given.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129592439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237208
J. Simmons, R. Sobiestianskas, S. Pralgauskaitė, J. Matukas, V. Palenskis
High-frequency relative intensity noise, mode-suppression ratio and cross-spectra of low-frequency optical and electrical noise were measured in 1.55 /spl mu/m strained-layer multi-quantum-well (MQW) InGaAsP/InP laser diodes, which underwent accelerated aging. The deterioration of the linewidth and side-mode-suppression ratio is accompanied by an increase in the negative correlation between the optical noise and terminal electrical noise in the vicinity of the threshold. This is explained by recombination processes through point defects in some areas of the active layer, which contributes to an intensive Lorentzian noise. An absence of both the Lorentzian noise and negative correlation between optical and electrical fluctuations at threshold indicate higher quality laser operation. It is, therefore, concluded that measurements of the correlation factor could be used as convenient method in laser quality screening.
{"title":"Optical and electrical noise and quality of degraded strained-layer DFB laser","authors":"J. Simmons, R. Sobiestianskas, S. Pralgauskaitė, J. Matukas, V. Palenskis","doi":"10.1109/COMMAD.2002.1237208","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237208","url":null,"abstract":"High-frequency relative intensity noise, mode-suppression ratio and cross-spectra of low-frequency optical and electrical noise were measured in 1.55 /spl mu/m strained-layer multi-quantum-well (MQW) InGaAsP/InP laser diodes, which underwent accelerated aging. The deterioration of the linewidth and side-mode-suppression ratio is accompanied by an increase in the negative correlation between the optical noise and terminal electrical noise in the vicinity of the threshold. This is explained by recombination processes through point defects in some areas of the active layer, which contributes to an intensive Lorentzian noise. An absence of both the Lorentzian noise and negative correlation between optical and electrical fluctuations at threshold indicate higher quality laser operation. It is, therefore, concluded that measurements of the correlation factor could be used as convenient method in laser quality screening.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121086691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237176
X. Zhang
A pulsed terahertz (10/sup 12/ Hz) or a "T-ray" occupies a large portion of the electromagnetic spectrum (0.1 THz to 10 THz) between the infrared and microwave bands. We expect that the research in the THz band in the 21st century will become one of the most promising research areas for transformational advances in physics and biology, as well as in other interdisciplinary fields.
{"title":"Recent progress of terahertz imaging technology","authors":"X. Zhang","doi":"10.1109/COMMAD.2002.1237176","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237176","url":null,"abstract":"A pulsed terahertz (10/sup 12/ Hz) or a \"T-ray\" occupies a large portion of the electromagnetic spectrum (0.1 THz to 10 THz) between the infrared and microwave bands. We expect that the research in the THz band in the 21st century will become one of the most promising research areas for transformational advances in physics and biology, as well as in other interdisciplinary fields.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121209129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237281
S. Somkuarnpanit, P. Koosirivanichakorn, S. Khuntaweetep
This paper presents an algorithm for use in designing a racetrack microresonator on silicon substrate, whose structure is illustrated. The accurate numerical FDTD has been used to calculate the characteristics of the device in the range of optical communication wavelengths. The optimum size of the guide, as well as the curvature of the curved guide, is considered from the results. From the optimum size of the device, the spectral response is consequently calculated, which leads to two important relationships between half-power bandwidth, HPBW, against the coupling efficiency, K, and free spatial range, FSR, against the racetrack round trip, X/sub rt/. Having used these parameters of L and R, in conjunction with the optimum size of the guide, in FDTD simulation, the transfer characteristics can be obtained as following: X/sub rt/ = 17.94 /spl mu/m, K = 0.223, FSR = 29.45 nm, HPBW= 4.45 nm, Q = 346.07 and finesse of 6.62, which are close to the design values. Therefore, our design procedure could be used in design of the dimensions of racetrack microresonators on silicon substrates in the communication wavelengths.
{"title":"Design of a silicon based track microcavity resonator using finite-difference time-domain method","authors":"S. Somkuarnpanit, P. Koosirivanichakorn, S. Khuntaweetep","doi":"10.1109/COMMAD.2002.1237281","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237281","url":null,"abstract":"This paper presents an algorithm for use in designing a racetrack microresonator on silicon substrate, whose structure is illustrated. The accurate numerical FDTD has been used to calculate the characteristics of the device in the range of optical communication wavelengths. The optimum size of the guide, as well as the curvature of the curved guide, is considered from the results. From the optimum size of the device, the spectral response is consequently calculated, which leads to two important relationships between half-power bandwidth, HPBW, against the coupling efficiency, K, and free spatial range, FSR, against the racetrack round trip, X/sub rt/. Having used these parameters of L and R, in conjunction with the optimum size of the guide, in FDTD simulation, the transfer characteristics can be obtained as following: X/sub rt/ = 17.94 /spl mu/m, K = 0.223, FSR = 29.45 nm, HPBW= 4.45 nm, Q = 346.07 and finesse of 6.62, which are close to the design values. Therefore, our design procedure could be used in design of the dimensions of racetrack microresonators on silicon substrates in the communication wavelengths.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122972068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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