Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237216
T. Nguyen, C. Musca, J. Dell, J. Antoszewski, L. Faraone
HgCdTe long-wavelength infrared (LWIR) photodiodes have been successfully fabricated using plasma induced junction formation. The performance of the devices were characterised through I-V measurements and analysed by modelling the dark current mechanisms which determine the I-V characteristic. Analytical models were used and a very close fit to the measured data at 80 K was achieved. The model included the effects of diffusion, trap-assisted tunnelling, band-to-band tunnelling, generation-recombination, and surface leakage current. The dark current modelling has identified material defects and non-ideal surface passivation as the factors limiting performance in HgCdTe LWIR photodiodes fabricated using plasma induced junction formation.
{"title":"Modelling of dark currents in LWIR HgCdTe photodiodes","authors":"T. Nguyen, C. Musca, J. Dell, J. Antoszewski, L. Faraone","doi":"10.1109/COMMAD.2002.1237216","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237216","url":null,"abstract":"HgCdTe long-wavelength infrared (LWIR) photodiodes have been successfully fabricated using plasma induced junction formation. The performance of the devices were characterised through I-V measurements and analysed by modelling the dark current mechanisms which determine the I-V characteristic. Analytical models were used and a very close fit to the measured data at 80 K was achieved. The model included the effects of diffusion, trap-assisted tunnelling, band-to-band tunnelling, generation-recombination, and surface leakage current. The dark current modelling has identified material defects and non-ideal surface passivation as the factors limiting performance in HgCdTe LWIR photodiodes fabricated using plasma induced junction formation.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"339 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132778971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237278
Jiayi Huang, T.P. Chen, M. Tse
In this study, a novel technique, i.e. the direct-current current-voltage (DCIV) method is used to quantitatively examine the influence of nitrogen concentration in nitrided oxide on interface trap generation caused by DC and dynamic Fowler-Nordheim (FN) injections. For both DC and dynamic FN stresses, a power-law stress-time dependence of interface trap generation is always observed, and the increase of nitrogen concentration leads to a significant suppression of interface trap generation. For the dynamic stress, interface trap generation increases with frequency, but the interface trap generation at each frequency is reduced with a higher nitrogen concentration. A comparison of interface trap generation between DC and dynamic stresses and explanation for the difference are presented. The nitridation effect on the interface trap generation can be explained by the models based on either the rigid Si-N bonds at the interface or the nitrided oxide impediment to the damaging positive species such as H/sup +/ or holes.
{"title":"Study of influence of nitrogen concentration in nitrided oxide on interface trap generation","authors":"Jiayi Huang, T.P. Chen, M. Tse","doi":"10.1109/COMMAD.2002.1237278","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237278","url":null,"abstract":"In this study, a novel technique, i.e. the direct-current current-voltage (DCIV) method is used to quantitatively examine the influence of nitrogen concentration in nitrided oxide on interface trap generation caused by DC and dynamic Fowler-Nordheim (FN) injections. For both DC and dynamic FN stresses, a power-law stress-time dependence of interface trap generation is always observed, and the increase of nitrogen concentration leads to a significant suppression of interface trap generation. For the dynamic stress, interface trap generation increases with frequency, but the interface trap generation at each frequency is reduced with a higher nitrogen concentration. A comparison of interface trap generation between DC and dynamic stresses and explanation for the difference are presented. The nitridation effect on the interface trap generation can be explained by the models based on either the rigid Si-N bonds at the interface or the nitrided oxide impediment to the damaging positive species such as H/sup +/ or holes.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134187061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237248
L. Van Dao, M. Lowe, P. Hannaford
Using femtosecond three-pulse two-colour photon echo measurements we study the optical nonlinearity induced by pump and probe in the short time scale (< 500 fs) where the free induction decay and photon echo are the main contribution to observed signal and in a long time scale (up to 20 ps) in the trace of the population grating. The variation of the pump and probe wavelength and use of spectrally resolved measurements allows us to study the origin of the yellow band and the phase and energy relaxation properties of this band. The results suggest that the light emission in the yellow band is the recombination between shallow donors and deep acceptors and the carriers trapping time is very short.
{"title":"Femtosecond three-pulse photon echo and transient grating studies of the yellow band of GaN","authors":"L. Van Dao, M. Lowe, P. Hannaford","doi":"10.1109/COMMAD.2002.1237248","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237248","url":null,"abstract":"Using femtosecond three-pulse two-colour photon echo measurements we study the optical nonlinearity induced by pump and probe in the short time scale (< 500 fs) where the free induction decay and photon echo are the main contribution to observed signal and in a long time scale (up to 20 ps) in the trace of the population grating. The variation of the pump and probe wavelength and use of spectrally resolved measurements allows us to study the origin of the yellow band and the phase and energy relaxation properties of this band. The results suggest that the light emission in the yellow band is the recombination between shallow donors and deep acceptors and the carriers trapping time is very short.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128082089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237269
S. Dasgupta, D. Jain
A numerical solution of two-dimensional Poisson's equation and Schrodinger wave equation of a deep sub-micron and nano-meter MOSFET has been obtained to gather information about the charge and the potential distribution in the depletion region. The quantum as well as classical charge has been computed. The quantum charge is a direct function of Density of States (DOS). The classical charge can be found out by simply solving the two-dimensional Poisson equation under specific boundary conditions governed by the physics of the device. The channel voltage profile has also been presented. It is seen that the classical model underestimates the channel voltage and the longitudinal electric field in the channel as compared to that obtained through Quantum Mechanical (QM) approach.
{"title":"Self-consistent solution of 2D-Poisson and Schrodinger wave equation for nano-metric MOSFET modeling for VLSI/ULSI purposes","authors":"S. Dasgupta, D. Jain","doi":"10.1109/COMMAD.2002.1237269","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237269","url":null,"abstract":"A numerical solution of two-dimensional Poisson's equation and Schrodinger wave equation of a deep sub-micron and nano-meter MOSFET has been obtained to gather information about the charge and the potential distribution in the depletion region. The quantum as well as classical charge has been computed. The quantum charge is a direct function of Density of States (DOS). The classical charge can be found out by simply solving the two-dimensional Poisson equation under specific boundary conditions governed by the physics of the device. The channel voltage profile has also been presented. It is seen that the classical model underestimates the channel voltage and the longitudinal electric field in the channel as compared to that obtained through Quantum Mechanical (QM) approach.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131202407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237272
M. Tsai, Y. Wu, S. Tan, M. Chu, W.T. Chen, Y. Yang, W. Lour
This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 /spl mu/m In/sub 0.5/Ga/sub 0.5/P bulk layer and a 0.06 /spl mu/m Al/sub 0.45/Ga/sub 0.55/As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.
本文报道了一种新型复合发射极异质结双极晶体管(CEHBT)，其复合发射极由0.04 /spl μ m In/sub 0.5/Ga/sub 0.5/P本体层和0.06 /spl μ l Al/sub 0.45/Ga/sub 0.55/As/GaAs数字渐变超晶格(DGSL)层构成。CEHBT的集电极-发射极偏置电压为55 mV，基极-发射极导通电压为0.87 V，比InGaP/AlGaAs突发发射极HBT的1.27 V低0.4 V。研究发现，仅使用DGSL层作为钝化层时，CEHBTs的电流增益高达250，甚至可以提高到385。
{"title":"A new InGap/AlGaAs/GaAs composite-emitter heterojunction bipolar transistors","authors":"M. Tsai, Y. Wu, S. Tan, M. Chu, W.T. Chen, Y. Yang, W. Lour","doi":"10.1109/COMMAD.2002.1237272","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237272","url":null,"abstract":"This paper reported a new composite-emitter heterojunction bipolar transistor (CEHBT) with a composite emitter formed of a 0.04 /spl mu/m In/sub 0.5/Ga/sub 0.5/P bulk layer and a 0.06 /spl mu/m Al/sub 0.45/Ga/sub 0.55/As/GaAs digital graded superlattice (DGSL) layer. The CEHBT's exhibit a small collector-emitter offset voltage of 55 mV and a base-emitter turn-on voltage of 0.87 V, which is 0.4 V lower than that of 1.27 V of the InGaP/AlGaAs abrupt-emitter HBT. It is found that CEHBTs exhibits a current gain as high as 250 and is even enhanced to 385 when only a DGSL layer is used for passivation layer.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"37 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131353660","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237185
P. Arifin, Sugianto, E. Suprianto, N. Wendri, H. Sutanto, M. Budiman, M. Barmawi
Thin films Al/sub x/Ga/sub 1-x/N were grown on (0001) sapphire substrates by plasma assisted metal-organic chemical vapor deposition (PA-MOCVD). Plasma-cracked N/sub 2/, trimethylaluminum (TMAl) and trimethylgallium (TMGa) were used as nitrogen, aluminum and gallium sources, respectively. The results of energy dispersive X-ray (EDX) measurements performed at room temperature yielded the linear dependence of molar fraction of Al (x) on molar fraction of vapor phase of TMAl/(TMAl + TMGa). The dependence of the band gap energy on the molar fraction of Al (x) showed quadratic expression, E/sub g/ (x) = 3.35 + 1.55x + 1.3x/sup 2/ eV. Al/sub x/Ga/sub 1-x/N layers with x < 0.34 show n-type conduction with room temperature mobilities in the range of 5 to 10 cm/sup 2//V/spl middot/s, and electron concentrations of 9.0 /spl times/ 10/sup 16/ to 1.4 /spl times/ 10/sup 19/cm/sup -3/.
{"title":"Growth of Al/sub x/Ga/sub 1-x/N by plasma assisted MOCVD","authors":"P. Arifin, Sugianto, E. Suprianto, N. Wendri, H. Sutanto, M. Budiman, M. Barmawi","doi":"10.1109/COMMAD.2002.1237185","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237185","url":null,"abstract":"Thin films Al/sub x/Ga/sub 1-x/N were grown on (0001) sapphire substrates by plasma assisted metal-organic chemical vapor deposition (PA-MOCVD). Plasma-cracked N/sub 2/, trimethylaluminum (TMAl) and trimethylgallium (TMGa) were used as nitrogen, aluminum and gallium sources, respectively. The results of energy dispersive X-ray (EDX) measurements performed at room temperature yielded the linear dependence of molar fraction of Al (x) on molar fraction of vapor phase of TMAl/(TMAl + TMGa). The dependence of the band gap energy on the molar fraction of Al (x) showed quadratic expression, E/sub g/ (x) = 3.35 + 1.55x + 1.3x/sup 2/ eV. Al/sub x/Ga/sub 1-x/N layers with x < 0.34 show n-type conduction with room temperature mobilities in the range of 5 to 10 cm/sup 2//V/spl middot/s, and electron concentrations of 9.0 /spl times/ 10/sup 16/ to 1.4 /spl times/ 10/sup 19/cm/sup -3/.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123318927","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237257
Ching-Fuh Lin, Wu-Ping Huang, Eih-Zhe Liang, Ting-Wien Su, Hsing‐Hung Hsieh
Silicon dioxide nanoparticles are used as oxide layer in metal-oxide-silicon tunneling diodes. With its non-uniformity in thickness, tunneling current is concentrated in carrier accumulation region. Both electron and hole can be confined to enhance radiative recombination rate. Electroluminescence at silicon band edge (1.1 /spl mu/m) with external quantum efficiency 1.5/spl times/10/sup -4/ has been achieved. KOH wet etch also contributes to improvement on efficiency by removing nonradiative recombination center at surface. Frequency response is exploited as tool for extraction radiative and nonradiative recombination rate.
{"title":"Using SiO/sub 2/ nanoparticles to efficiently enhance light emission from metal-oxide silicon tunneling diodes on Si","authors":"Ching-Fuh Lin, Wu-Ping Huang, Eih-Zhe Liang, Ting-Wien Su, Hsing‐Hung Hsieh","doi":"10.1109/COMMAD.2002.1237257","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237257","url":null,"abstract":"Silicon dioxide nanoparticles are used as oxide layer in metal-oxide-silicon tunneling diodes. With its non-uniformity in thickness, tunneling current is concentrated in carrier accumulation region. Both electron and hole can be confined to enhance radiative recombination rate. Electroluminescence at silicon band edge (1.1 /spl mu/m) with external quantum efficiency 1.5/spl times/10/sup -4/ has been achieved. KOH wet etch also contributes to improvement on efficiency by removing nonradiative recombination center at surface. Frequency response is exploited as tool for extraction radiative and nonradiative recombination rate.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123593714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237302
B. Lough, S. P. Lee, Z. Dou, R. Lewis, C. Zhang
We report our recent experimental and numerical investigation into the thermal and electrical transport in GaAs-AlGaAs semiconductor multilayer structures. Electrical and thermal conduction measurements were performed on multilayer structures to determine the temperature gradient across the sample. AuGe was used for top contact metallisation, and an InGa eutectic for bottom substrate contact. Metallisation contacts were also grown directly onto the substrate in order to compare results with and without the device included. By using a variable load resistor connected in series with the device, we can accurately determine the current-voltage characteristics of the device. Thus the power input can be obtained. The temperature distribution on the top and bottom substrate was measured with micro thermocouples. Since the cooling device is grown on an n-type semiconductor substrate the effects of joule heating in the substrate had to be considered. Treating the substrate as bulk material and calculating joule heating showed that this effect is negligible. Comparing experimental measurements of the device and of the substrate alone support this. The experimental I-V characteristics of the device differ significantly in shape from theoretical I-V characteristics. This may be due to that fact that space-charge effects are not included in the currently accepted model (Richardson's equation). Due to the small size of the devices and therefore very large electric fields, this effect may be important. Work is currently being carried out to modify the model. The devices studied so far have been made from undoped GaAs-AI/sub 0.07/Ga/sub 0.03/As heterostructures. For large cooling power it is a requirement that the conduction band of the layers be close to the Fermi level.
{"title":"Thermal and electrical characteristics of a multilayer thermionic device","authors":"B. Lough, S. P. Lee, Z. Dou, R. Lewis, C. Zhang","doi":"10.1109/COMMAD.2002.1237302","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237302","url":null,"abstract":"We report our recent experimental and numerical investigation into the thermal and electrical transport in GaAs-AlGaAs semiconductor multilayer structures. Electrical and thermal conduction measurements were performed on multilayer structures to determine the temperature gradient across the sample. AuGe was used for top contact metallisation, and an InGa eutectic for bottom substrate contact. Metallisation contacts were also grown directly onto the substrate in order to compare results with and without the device included. By using a variable load resistor connected in series with the device, we can accurately determine the current-voltage characteristics of the device. Thus the power input can be obtained. The temperature distribution on the top and bottom substrate was measured with micro thermocouples. Since the cooling device is grown on an n-type semiconductor substrate the effects of joule heating in the substrate had to be considered. Treating the substrate as bulk material and calculating joule heating showed that this effect is negligible. Comparing experimental measurements of the device and of the substrate alone support this. The experimental I-V characteristics of the device differ significantly in shape from theoretical I-V characteristics. This may be due to that fact that space-charge effects are not included in the currently accepted model (Richardson's equation). Due to the small size of the devices and therefore very large electric fields, this effect may be important. Work is currently being carried out to modify the model. The devices studied so far have been made from undoped GaAs-AI/sub 0.07/Ga/sub 0.03/As heterostructures. For large cooling power it is a requirement that the conduction band of the layers be close to the Fermi level.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122742842","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237225
D. Redfern, C. Musca, J. Dell, L. Faraone
A new technique is described in which the series resistance of laser beam induced current measurements can be determined. Once obtained, this resistance can be equated to an analytic expression for the resistance that involves the depth of the p-n junction in the illuminated photodiode, and a value for the junction depth can be obtained, as has previously been demonstrated. The new measurement scheme involves both laser beam induced current and lateral photovoltage measurements on the same device using the same remote contacts. This avoids the need for a contact to both sides of the p-n junction and hence the technique can readily be applied to individual photodiodes within a large focal plane array.
{"title":"Nondestructive determination of p-n junction depth using laser beam induced current and lateral photovoltage measurements","authors":"D. Redfern, C. Musca, J. Dell, L. Faraone","doi":"10.1109/COMMAD.2002.1237225","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237225","url":null,"abstract":"A new technique is described in which the series resistance of laser beam induced current measurements can be determined. Once obtained, this resistance can be equated to an analytic expression for the resistance that involves the depth of the p-n junction in the illuminated photodiode, and a value for the junction depth can be obtained, as has previously been demonstrated. The new measurement scheme involves both laser beam induced current and lateral photovoltage measurements on the same device using the same remote contacts. This avoids the need for a contact to both sides of the p-n junction and hence the technique can readily be applied to individual photodiodes within a large focal plane array.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115578140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2002-12-11DOI: 10.1109/COMMAD.2002.1237282
B. C. Johnson, J. McCallum
Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si/sup +/ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.
{"title":"Ion channelling and Raman scattering study of self-implanted silicon","authors":"B. C. Johnson, J. McCallum","doi":"10.1109/COMMAD.2002.1237282","DOIUrl":"https://doi.org/10.1109/COMMAD.2002.1237282","url":null,"abstract":"Ion channeling and Raman spectroscopy techniques were used to investigate ion-beam damage created by implantation of 245 keV and 5.5 MeV Si/sup +/ into Si(100). The two techniques employed in this work are compared and are shown to be complimentary with Raman scattering being more sensitive to low damage concentrations. The spatial correlation model is also discussed.","PeriodicalId":129668,"journal":{"name":"2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601)","volume":"167 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2002-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122152714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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