Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327008
Dylan F. Williams, R. Marks
This paper investigates the accuracy of on-wafer scattering-parameter calibrations at the probe tips. Data show the extent to which certain probe-tip calibrations are consistent with one another and applicable to the characterization of devices or circuits fabricated on different wafers or embedded in different transmission-line media. Calibrations to the probe tips are especially well suited to lower-frequency microwave measurements. Further results demonstrate conditions under which probe-tip calibrations fail.
{"title":"Calibrating On-Wafer Probes to the Probe Tips","authors":"Dylan F. Williams, R. Marks","doi":"10.1109/ARFTG.1992.327008","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327008","url":null,"abstract":"This paper investigates the accuracy of on-wafer scattering-parameter calibrations at the probe tips. Data show the extent to which certain probe-tip calibrations are consistent with one another and applicable to the characterization of devices or circuits fabricated on different wafers or embedded in different transmission-line media. Calibrations to the probe tips are especially well suited to lower-frequency microwave measurements. Further results demonstrate conditions under which probe-tip calibrations fail.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121514191","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327006
A. Agrawal
The digital interconnects are characterized in frequency domain by measuring the scattering matrices using network analyser. These scattering matrices are used to find frequency dependent resistance, inductance, capacitance, and conductance of the coupled transmission lines. In time domain, the lossy transmission line parameters are used to simulate the transient response to analyse the skin-effect and dielectric loss effect on the signal propagation and cross-talk.
{"title":"Frequency and Time Domain Characterization of High-Speed Digital Circuit Interconnects in a Multilayer Printed Circuit Board","authors":"A. Agrawal","doi":"10.1109/ARFTG.1992.327006","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327006","url":null,"abstract":"The digital interconnects are characterized in frequency domain by measuring the scattering matrices using network analyser. These scattering matrices are used to find frequency dependent resistance, inductance, capacitance, and conductance of the coupled transmission lines. In time domain, the lossy transmission line parameters are used to simulate the transient response to analyse the skin-effect and dielectric loss effect on the signal propagation and cross-talk.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127929531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327002
R. Grzybowski, D. B. Jensen, M. Gilden, R. J. Bacher
All interconnect mediums are expected to conduct signals with a minimum amount of corruption. This is particularly important when the signals contain high frequency fundamental or harmonic information. For microwave applications or very densely packed circuit modules, thin film conductors are typically the interconnect medium of choice. Alternatively, thick film interconnects have served well for many applications. The question this work seeks to answer is this. With the improved thick film material sets and 300 to 400 mesh screen printing procedures available today, at approximately what frequency or conditions should the thick filmhhin film tradeoff decision be reconsidered? This question is especially poignant for applications in which circuit packing density is not the main driver. Stated another way, to what frequency regime do the imperfections in the interconnect pattern profile introduced by the screen printing operation, or material properties intrinsic to the thick film pastes, make thick film passive structures and interconnects inferior to thin film counterparts?
{"title":"Using Microwave Coupled Resonator Filters to Characterize Thick Film Interconnects for Highfrequency Signal Propagation","authors":"R. Grzybowski, D. B. Jensen, M. Gilden, R. J. Bacher","doi":"10.1109/ARFTG.1992.327002","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327002","url":null,"abstract":"All interconnect mediums are expected to conduct signals with a minimum amount of corruption. This is particularly important when the signals contain high frequency fundamental or harmonic information. For microwave applications or very densely packed circuit modules, thin film conductors are typically the interconnect medium of choice. Alternatively, thick film interconnects have served well for many applications. The question this work seeks to answer is this. With the improved thick film material sets and 300 to 400 mesh screen printing procedures available today, at approximately what frequency or conditions should the thick filmhhin film tradeoff decision be reconsidered? This question is especially poignant for applications in which circuit packing density is not the main driver. Stated another way, to what frequency regime do the imperfections in the interconnect pattern profile introduced by the screen printing operation, or material properties intrinsic to the thick film pastes, make thick film passive structures and interconnects inferior to thin film counterparts?","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"212 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134302064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327000
David K. Sakamoto
This paper discusses the use of Low Temperature Cofired Ceramic (LTCC) packages and flip chip MMICs designed for automated assembly and test in T/R module applications. The reduction of the number of components, elimination of assembly steps, and the automated assembly and test of T/R modules that is thus achieved is also discussed. The use of multi-layer LTCC allows dense packaging. DC lines can be routed on multiple layers, and different types of RF configurations ¿ microstrip, stripline, and coplanar waveguide (CPW) ¿ can be realized on the same substrate. RF cross-overs with high isolation between lines can be achieved by means of buried transmission lines and ground planes. The substrate can be fabricated to be used in a conventional metal housing, or the substrate can be fabricated to function as both the substrate and housing at the same time. With the latter method, walls are built up using the ceramic tape. These walls can also contain circuitry, allowing for higher packaging density. Flipped GaAs chips utilizing CPW structures eliminate costly backside processing of MMIC wafers. Flip chips used in T/R modules are thicker than conventional chips, 25 mils vs. 4 mils, thus providing a much more robust chip for handling by high speed automated assembly equipment. The use of flip chips simplifies the assembly procedure by eliminating wire bonds, since the solder attachment of the flip chip to the substrate serves as both die attach and interconnect.
{"title":"T/R Modules for Automated Assembly and Test Using Flip Chip and LTCC Packaging","authors":"David K. Sakamoto","doi":"10.1109/ARFTG.1992.327000","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327000","url":null,"abstract":"This paper discusses the use of Low Temperature Cofired Ceramic (LTCC) packages and flip chip MMICs designed for automated assembly and test in T/R module applications. The reduction of the number of components, elimination of assembly steps, and the automated assembly and test of T/R modules that is thus achieved is also discussed. The use of multi-layer LTCC allows dense packaging. DC lines can be routed on multiple layers, and different types of RF configurations ¿ microstrip, stripline, and coplanar waveguide (CPW) ¿ can be realized on the same substrate. RF cross-overs with high isolation between lines can be achieved by means of buried transmission lines and ground planes. The substrate can be fabricated to be used in a conventional metal housing, or the substrate can be fabricated to function as both the substrate and housing at the same time. With the latter method, walls are built up using the ceramic tape. These walls can also contain circuitry, allowing for higher packaging density. Flipped GaAs chips utilizing CPW structures eliminate costly backside processing of MMIC wafers. Flip chips used in T/R modules are thicker than conventional chips, 25 mils vs. 4 mils, thus providing a much more robust chip for handling by high speed automated assembly equipment. The use of flip chips simplifies the assembly procedure by eliminating wire bonds, since the solder attachment of the flip chip to the substrate serves as both die attach and interconnect.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133268514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326986
Oystein Pedersen, B. Flaten
As the speed and complexity of digital systems increase, the performance of the power system becomes more important. Due to switching in digital circuits, the power system will also contain high frequency current components. This high frequency currents introduces noise in the system and the result is reduced noise margins [1,2]. For CMOS circuits the trend is towards lower voltages and the noise in the system becomes more critical. For a designer, the goal is to design the power system in such a way that the noise from the switching circuits is reduced to a minimum [3]. To meet this goal, the designer need to know the behavior of the IC during switching; i.e. the current transients in power pins. There are two main problems: (1 ) the power system must supply the IC with the current needed. (2) the current transient in one IC should not influence the power to another IC. This paper focus on the current in ICs, and presents a method for measuring the transient current in power pins in digital circuits.
{"title":"Measurements of Dynamic Current in Switching CMOS Buffer","authors":"Oystein Pedersen, B. Flaten","doi":"10.1109/ARFTG.1992.326986","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326986","url":null,"abstract":"As the speed and complexity of digital systems increase, the performance of the power system becomes more important. Due to switching in digital circuits, the power system will also contain high frequency current components. This high frequency currents introduces noise in the system and the result is reduced noise margins [1,2]. For CMOS circuits the trend is towards lower voltages and the noise in the system becomes more critical. For a designer, the goal is to design the power system in such a way that the noise from the switching circuits is reduced to a minimum [3]. To meet this goal, the designer need to know the behavior of the IC during switching; i.e. the current transients in power pins. There are two main problems: (1 ) the power system must supply the IC with the current needed. (2) the current transient in one IC should not influence the power to another IC. This paper focus on the current in ICs, and presents a method for measuring the transient current in power pins in digital circuits.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"207 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124658682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326993
D. Walker, D.F. Williams, J. M. Morgan
This paper investigates the effects of variations in sheet resistance, geometry, distance from the probe tip, and fabrication processes on the impedance of planar nickel-chromium resistors. Resistor reactance is a strong function of film resistance, but depends only weakly on geometry and distance from the probe tip. Photoresist contamination in the resistive film induces more complicated impedance behavior, even at low frequencies. The impact on circuit design and time- and frequency-domain calibrations is considered in light of these results.
{"title":"Planar Resistors for Probe Station Calibration","authors":"D. Walker, D.F. Williams, J. M. Morgan","doi":"10.1109/ARFTG.1992.326993","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326993","url":null,"abstract":"This paper investigates the effects of variations in sheet resistance, geometry, distance from the probe tip, and fabrication processes on the impedance of planar nickel-chromium resistors. Resistor reactance is a strong function of film resistance, but depends only weakly on geometry and distance from the probe tip. Photoresist contamination in the resistive film induces more complicated impedance behavior, even at low frequencies. The impact on circuit design and time- and frequency-domain calibrations is considered in light of these results.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122288815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327009
B. Oldfield
Blind Mate Microwave connectors allow the possibility of assembling microwave subsystems like LEGGOS. There are many versions of blind mate connectors on the market with little or no standardization. Blind mate connectors are mostly ignored by the connector standards committees. This paper will propose a method of characterizing blind mate connectors and present data on three types of blind mates to 60 Ghz.
{"title":"Characterizing Blind Mate Connectors","authors":"B. Oldfield","doi":"10.1109/ARFTG.1992.327009","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327009","url":null,"abstract":"Blind Mate Microwave connectors allow the possibility of assembling microwave subsystems like LEGGOS. There are many versions of blind mate connectors on the market with little or no standardization. Blind mate connectors are mostly ignored by the connector standards committees. This paper will propose a method of characterizing blind mate connectors and present data on three types of blind mates to 60 Ghz.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127824610","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.326996
P. Walters, R. Pollard, J. Richardson, P. Gamand, P. Suchet
The purpose of this paper is to identify the differences between millimetre-wave small-signal scattering parameter device measurements on-wafer in coplanar and microstrip test formats. Calibration in coplanar and microstrip is examined to determine the measurement reference planes and possible calibration problems in the millimetre-wave frequency range. Different device model reference planes are considered.
{"title":"Coplanar Versus Microstrip Measurements of Millimetre-Wave Devices","authors":"P. Walters, R. Pollard, J. Richardson, P. Gamand, P. Suchet","doi":"10.1109/ARFTG.1992.326996","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.326996","url":null,"abstract":"The purpose of this paper is to identify the differences between millimetre-wave small-signal scattering parameter device measurements on-wafer in coplanar and microstrip test formats. Calibration in coplanar and microstrip is examined to determine the measurement reference planes and possible calibration problems in the millimetre-wave frequency range. Different device model reference planes are considered.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125798208","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327003
B. Janko, Pete Decher
The method developed here employs time domain reflectometry (TDR) techniques to measure model parameters of a lead in an interconnect or a package. TDR techniques have been broadly used in testing interconnect networks, since reflected waveforms provide excellent visualization of the signal path and waveform features can be readily associated with physical features of the device. What has not been widely appreciated is that quantitative values of network model parameters can be as easily extracted with TDR, in a manner that can make lumped model generation for an interconnect an easy job. The technique described here will be usefbl when a device already exists, for model pnmmeter geiieration from measurements, or, in cases where theoretical models also exist, for model parameter venficatioii. Although it can be used for a large variety of distributed impedance function carries the information about the local inductance and capacitance of the lead. Thus, lumped element LCZ models can be derived knowing this function. All the necessary calculations can easily be performed in time domain, thus avoiding artifacts that can arise with time-frequency domain transformations.
{"title":"Measuring Package and Interconnect Model Parameters Using Distributed Impedance","authors":"B. Janko, Pete Decher","doi":"10.1109/ARFTG.1992.327003","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327003","url":null,"abstract":"The method developed here employs time domain reflectometry (TDR) techniques to measure model parameters of a lead in an interconnect or a package. TDR techniques have been broadly used in testing interconnect networks, since reflected waveforms provide excellent visualization of the signal path and waveform features can be readily associated with physical features of the device. What has not been widely appreciated is that quantitative values of network model parameters can be as easily extracted with TDR, in a manner that can make lumped model generation for an interconnect an easy job. The technique described here will be usefbl when a device already exists, for model pnmmeter geiieration from measurements, or, in cases where theoretical models also exist, for model parameter venficatioii. Although it can be used for a large variety of distributed impedance function carries the information about the local inductance and capacitance of the lead. Thus, lumped element LCZ models can be derived knowing this function. All the necessary calculations can easily be performed in time domain, thus avoiding artifacts that can arise with time-frequency domain transformations.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115726554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-12-01DOI: 10.1109/ARFTG.1992.327007
A. Ferrero, U. Pisani, F. Sanpietro
The conventional network analyzer (NWA) two-port calibration procedures require a standard thru line to be connected between the ports. Unfortunately in many applications, for example when measuring MMIC or on-wafer devices with not aligned ports, a custom thru line must be used. The procedure here applied overcomes the difficulty due to the poor knowledge of this thru element since it is based on a generic reciprocal unknown two port structure, provided that its S21 phase shift is roughly known. Some experimental comparisons with other well sound calibration techniques will be here presented where different reciprocal two-port structures were used as unknown thru.
{"title":"Save The \"Thru\" in the A.N.A. Calibration","authors":"A. Ferrero, U. Pisani, F. Sanpietro","doi":"10.1109/ARFTG.1992.327007","DOIUrl":"https://doi.org/10.1109/ARFTG.1992.327007","url":null,"abstract":"The conventional network analyzer (NWA) two-port calibration procedures require a standard thru line to be connected between the ports. Unfortunately in many applications, for example when measuring MMIC or on-wafer devices with not aligned ports, a custom thru line must be used. The procedure here applied overcomes the difficulty due to the poor knowledge of this thru element since it is based on a generic reciprocal unknown two port structure, provided that its S21 phase shift is roughly known. Some experimental comparisons with other well sound calibration techniques will be here presented where different reciprocal two-port structures were used as unknown thru.","PeriodicalId":130939,"journal":{"name":"40th ARFTG Conference Digest","volume":"376 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131209550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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