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Performance Analysis of a Multicore Approach Proposed for Efficient Community Detection and Recommendation System 高效社区检测与推荐系统的多核方法性能分析
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-05 DOI: 10.1080/02564602.2023.2258490
Dipika Singh, Rakhi Garg
AbstractCommunity detection is a well-known area of research that yields essential results in various fields such as social media, biological networks, pandemic spread, recommendation systems, etc. There are two important areas for improvement in existing community detection algorithms: quality of community formed should be improved and a parallel approach to community detection is needed to handle massive data. In this paper, we have proposed a three-step parallel algorithm, Par-Com, using the concept of k Clique and modularity optimization to address both of the above issues. The proposed algorithm increases the execution speed and also improves the quality of the community formed by optimizing modularity. Par-Com uses dynamic load balancing on the multicore architecture of Supercomputer ParamShivay. We have also evaluated Par-Com’s performance against nine sequential and three parallel community detection algorithms on varying size datasets, i.e. karate, macaque, email, immuno, soc-epinions, facebook, and com-Friendster. The experiment result shows that Par-Com outperforms other algorithms under consideration with up to 45% increase in modularity and up to 84% increase in execution speed. Par-Com is also capable of detecting overlapping communities, fuzzy membership of each node, most influential node in each community formed, and outlier nodes. Nodes within a community that have the highest influence are deemed as experts. The choices made by an expert in a particular community are served as recommendations to other users within that community.Keywords: Community detectionmodularity optimizationoverlapping communityparallel computing Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by University Grants Commission.Notes on contributorsDipika SinghDipika Singh received MCA degree from RGPV University, Bhopal in 2011; qualified GATE in computer science and information technology (2012) with 2135 rank; qualified UGC-National Eligibility Test (NET) in computer science and applications (March 2013); qualified GATE in computer science and information technology (2013); awarded Junior Research Fellowship (on July 2018) and subsequently Senior Research Fellowship by the University Grants Commission (UGC), New Delhi, India (2017–2022). Selected as Lecturer, computer science in UPPSC Polytechnic, 2021 (Gazetted).Corresponding author. Email: dipikaa.ssingh@gmail.comRakhi GargRakhi Garg is associate professor in Department of Computer Science, MMV, BHU; qualified UGC-NET for eligibility for lectureship in computer science & applications in Universities/Institutions throughout the country. Done PhD in association rule mining algorithms at Department of Computer Science, Institute of Science, Banaras Hindu University, Varanasi (INDIA). master in computer science from Banaras Hindu University, Varanasi, INDIA, 1995–1997 with 1st division bachelors in computer science from
摘要社区检测是一个众所周知的研究领域,在社交媒体、生物网络、流行病传播、推荐系统等各个领域都取得了重要的成果。现有的社区检测算法有两个重要的改进领域:一是提高社区形成的质量,二是需要一种并行的社区检测方法来处理海量数据。在本文中,我们提出了一个三步并行算法,Par-Com,使用k Clique和模块化优化的概念来解决上述两个问题。该算法不仅提高了执行速度,而且通过优化模块化,提高了社区的质量。parcom在超级计算机paramshiway的多核架构上使用动态负载平衡。我们还在不同大小的数据集(即空手道、猕猴、电子邮件、免疫、社交网站、facebook和com-Friendster)上,对Par-Com在9种顺序和3种并行社区检测算法上的性能进行了评估。实验结果表明,Par-Com算法的模块化程度提高了45%,执行速度提高了84%。Par-Com还能够检测重叠的社区、每个节点的模糊隶属度、每个社区中最具影响力的节点以及离群节点。社区中影响力最大的节点被视为专家。某一特定社区的专家所作的选择将作为该社区内其他用户的建议。关键词:社区检测模块化优化重叠社区并行计算披露声明作者未报告潜在利益冲突。其他资料资助本研究由大学教育资助委员会资助。dipika Singh于2011年获得印度博帕尔RGPV大学的硕士学位;计算机科学与信息技术(2012)专业,排名2135;通过教资会计算机科学与应用全国资格考试(2013年3月);计算机科学与信息技术专业(2013)合格;获印度新德里大学教育资助委员会颁发初级研究员奖学金(2018年7月)和高级研究员奖学金(2017-2022年)。获选为UPPSC理工学院计算机科学讲师,2021年(宪报)。相应的作者。Email: dipikaa.ssingh@gmail.comRakhi GargRakhi Garg, BHU MMV计算机系副教授;符合教资会网络在全国各大学/院校担任计算机科学及应用讲座的资格。印度瓦拉纳西巴纳拉斯印度教大学科学研究所计算机科学系关联规则挖掘算法博士。1995年至1997年在印度瓦拉纳西巴纳拉斯印度教大学获得计算机科学硕士学位,1992年至1995年在印度瓦拉纳西巴纳拉斯印度教大学获得计算机科学学士学位。电子邮件:dipika.singh4@bhu.ac.in
{"title":"Performance Analysis of a Multicore Approach Proposed for Efficient Community Detection and Recommendation System","authors":"Dipika Singh, Rakhi Garg","doi":"10.1080/02564602.2023.2258490","DOIUrl":"https://doi.org/10.1080/02564602.2023.2258490","url":null,"abstract":"AbstractCommunity detection is a well-known area of research that yields essential results in various fields such as social media, biological networks, pandemic spread, recommendation systems, etc. There are two important areas for improvement in existing community detection algorithms: quality of community formed should be improved and a parallel approach to community detection is needed to handle massive data. In this paper, we have proposed a three-step parallel algorithm, Par-Com, using the concept of k Clique and modularity optimization to address both of the above issues. The proposed algorithm increases the execution speed and also improves the quality of the community formed by optimizing modularity. Par-Com uses dynamic load balancing on the multicore architecture of Supercomputer ParamShivay. We have also evaluated Par-Com’s performance against nine sequential and three parallel community detection algorithms on varying size datasets, i.e. karate, macaque, email, immuno, soc-epinions, facebook, and com-Friendster. The experiment result shows that Par-Com outperforms other algorithms under consideration with up to 45% increase in modularity and up to 84% increase in execution speed. Par-Com is also capable of detecting overlapping communities, fuzzy membership of each node, most influential node in each community formed, and outlier nodes. Nodes within a community that have the highest influence are deemed as experts. The choices made by an expert in a particular community are served as recommendations to other users within that community.Keywords: Community detectionmodularity optimizationoverlapping communityparallel computing Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work was supported by University Grants Commission.Notes on contributorsDipika SinghDipika Singh received MCA degree from RGPV University, Bhopal in 2011; qualified GATE in computer science and information technology (2012) with 2135 rank; qualified UGC-National Eligibility Test (NET) in computer science and applications (March 2013); qualified GATE in computer science and information technology (2013); awarded Junior Research Fellowship (on July 2018) and subsequently Senior Research Fellowship by the University Grants Commission (UGC), New Delhi, India (2017–2022). Selected as Lecturer, computer science in UPPSC Polytechnic, 2021 (Gazetted).Corresponding author. Email: dipikaa.ssingh@gmail.comRakhi GargRakhi Garg is associate professor in Department of Computer Science, MMV, BHU; qualified UGC-NET for eligibility for lectureship in computer science & applications in Universities/Institutions throughout the country. Done PhD in association rule mining algorithms at Department of Computer Science, Institute of Science, Banaras Hindu University, Varanasi (INDIA). master in computer science from Banaras Hindu University, Varanasi, INDIA, 1995–1997 with 1st division bachelors in computer science from","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135484081","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Technical Analysis of Digital Image and Video Processing 数字图像与视频处理技术分析
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-10-02 DOI: 10.1080/02564602.2023.2262418
Prasanta Kumar Sahoo, Debasis Gountia, Ranjan Kumar Dash, Jahangir Mohammed
AbstractVideo processing is the most emergent area of image processing in Research and Development. This paper, we present some advanced technology interrelated to video and image processing, which will provide a super-resolution high-quality most prominent visible light video for better human visualization and background motions or gesticulations of the human brain. There are two approaches for increasing the current resolution level of an image. The first one is the improvement of spatial resolution by reducing the size of pixels through the techniques of sensor manufacturing by about 40 Mm2 for a 0.35 Mm CMOS process and the second approach is the enhancement of chip size that also enhances the capacitance. In video processing, we mainly focus on object images, i.e. any form of signal processing in which the input is an image and the output is a photograph or a frame of video. So, it will be better to converge over techniques of digital image processing. In the proposed algorithm (MHI Simulink model), edge extraction is performed to find the precious area of MRI and CT-Scan images. Using FPGA, edge detection methods have been implemented over scanned images to get better accuracy. The accuracy of the proposed method has been compared with Prewitt and Sobel’s edge detection techniques. The proposed method has given better accuracy than Prewitt and Sobel methods. Finally, this paper shows future directions for researchers to enhance the characteristics of digital image and video processing.KEYWORDS: CMOSFPGAgesticulationsimage processingmultimediasignal processingsuper resolutionvideo processing Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work has been supported by Microsoft Research [grant #00138000679].Notes on contributorsPrasanta Kumar SahooPrasanta Kumar Sahoo received a bachelor’s degree in computer science and a master’s degree in computer science and engineering from Utkal University, Odisha, India in 2004 and 2014, respectively. He is pursuing a PhD in information technology and engineering at Odisha University of Technology and Research (O. U. T. R.), Odisha, India. His current research interest includes artificial intelligence, image processing, machine learning, cellular automata, and algorithm designing. He has authored 2 internationally referred journals, 1 conference proceedings, and prepared many research articles in the aforementioned areas. Email: mrprasantasahoo@gmail.comDebasis GountiaDebasis Gountia received the Mtech degree in computer science and engineering (CSE) from the Indian Institute of Technology (IIT) Kharagpur, India. He received the Btech degree in CSE from the UCE Burla, India. He received a PhD award in CSE from the IIT Roorkee, India after being recommended and highly praised by Ritsumeikan University Japan and North Texas University USA. He has over 20 years of teaching and research experience in various organizations. His research inte
jahangir MohammedJahangir Mohammed分别于2001年和2004年在印度奥里萨邦Utkal大学获得物理学硕士和哲学博士学位。他于2009年在印度西孟加拉邦加尔各答的印度统计研究所(ISI)获得计算机科学硕士学位。他正在印度奥里萨邦的乌特卡尔大学攻读物理学博士学位。他目前在印度奥里萨邦纳巴朗普尔学位学院物理系担任讲师。他目前的研究兴趣包括元胞自动机、模式识别、图像处理、统计力学和计算物理。电子邮件:jahangirmd.physics@gmail.com
{"title":"A Technical Analysis of Digital Image and Video Processing","authors":"Prasanta Kumar Sahoo, Debasis Gountia, Ranjan Kumar Dash, Jahangir Mohammed","doi":"10.1080/02564602.2023.2262418","DOIUrl":"https://doi.org/10.1080/02564602.2023.2262418","url":null,"abstract":"AbstractVideo processing is the most emergent area of image processing in Research and Development. This paper, we present some advanced technology interrelated to video and image processing, which will provide a super-resolution high-quality most prominent visible light video for better human visualization and background motions or gesticulations of the human brain. There are two approaches for increasing the current resolution level of an image. The first one is the improvement of spatial resolution by reducing the size of pixels through the techniques of sensor manufacturing by about 40 Mm2 for a 0.35 Mm CMOS process and the second approach is the enhancement of chip size that also enhances the capacitance. In video processing, we mainly focus on object images, i.e. any form of signal processing in which the input is an image and the output is a photograph or a frame of video. So, it will be better to converge over techniques of digital image processing. In the proposed algorithm (MHI Simulink model), edge extraction is performed to find the precious area of MRI and CT-Scan images. Using FPGA, edge detection methods have been implemented over scanned images to get better accuracy. The accuracy of the proposed method has been compared with Prewitt and Sobel’s edge detection techniques. The proposed method has given better accuracy than Prewitt and Sobel methods. Finally, this paper shows future directions for researchers to enhance the characteristics of digital image and video processing.KEYWORDS: CMOSFPGAgesticulationsimage processingmultimediasignal processingsuper resolutionvideo processing Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationFundingThis work has been supported by Microsoft Research [grant #00138000679].Notes on contributorsPrasanta Kumar SahooPrasanta Kumar Sahoo received a bachelor’s degree in computer science and a master’s degree in computer science and engineering from Utkal University, Odisha, India in 2004 and 2014, respectively. He is pursuing a PhD in information technology and engineering at Odisha University of Technology and Research (O. U. T. R.), Odisha, India. His current research interest includes artificial intelligence, image processing, machine learning, cellular automata, and algorithm designing. He has authored 2 internationally referred journals, 1 conference proceedings, and prepared many research articles in the aforementioned areas. Email: mrprasantasahoo@gmail.comDebasis GountiaDebasis Gountia received the Mtech degree in computer science and engineering (CSE) from the Indian Institute of Technology (IIT) Kharagpur, India. He received the Btech degree in CSE from the UCE Burla, India. He received a PhD award in CSE from the IIT Roorkee, India after being recommended and highly praised by Ritsumeikan University Japan and North Texas University USA. He has over 20 years of teaching and research experience in various organizations. His research inte","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135900245","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Wideband DNG Metamaterial Absorber with WS-Shaped Split Ring Resonator for X- and Ku- Frequency Band Applications 一种用于X和Ku频段的带ws形劈开环谐振腔的宽带DNG超材料吸收器
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-21 DOI: 10.1080/02564602.2023.2260345
Ramesh Amugothu, Vakula Damera
AbstractA novel compact microwave metamaterial absorber structure with a wide bandwidth is proposed. The absorber structure is designed on an FR4 substrate with a 2.4 mm thickness. The metamaterial absorber unit cell design consists of a combination of W and S-shaped structures in which splits are incorporated to have the effect of a split ring resonator. The proposed unit cell structure is designed to have a wide absorption band, which includes the X and Ku frequency bands. The optimized dimension of the unit cell is 0.071 λ0 × 0.71 λ0 where λ0 is the wavelength of the center frequency of the absorption band. The WS-shaped structures are oriented to absorb TE and TM waves for a wide range of polarization angles. The simulation results of the unit cell have shown absorption above 95% from 10.48 to 13.28 GHz. In addition, the absorber has an efficiency above 92% for incidence angles from 0° to 60° for fixed polarization. The unit cell structure and array are fabricated, and measurements are performed. The simulation and measured results have shown good agreement. The proposed metamaterial can be used in defense and radar surveillance applications.KEYWORDS: Metamaterial absorberPolarizationPolarization insensitiveSplit ring resonatorWideband Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsRamesh AmugothuRamesh Amugothu received his Btech degree in electronics and communication engineering from Jawaharlal Nehru Technological University in Hyderabad, India, in 2013, and an Mtech degree in the department of electronics and communication engineering from the National Institute of Technology Surathkal, India, in 2016. Currently, he is pursuing his PhD degree in the department of electronics and communication engineering at the National Institute of Technology, Warangal, India. He has over 3 year’s research/academic experience. He is an IEEE student member, voice chair for IEEE-MTT and IEEE-APS at NIT Warangal, India. Corresponding author. Email: ar720057@student.nitw.ac.inVakula DameraVakula Damera received a bachelor’s degree in electronics and communication engineering from Nagarjuna University, Andhra Pradesh, India. And a master’s degree from the Birla Institute of Technology, Mesra, India. With a focus on microwave specialization in 1992 and 1994, respectively, and a PhD degree in fault diagnostics of antenna arrays from the National Institute of Technology, Warangal, India, in 2010. She is a professor at the National Institute of Technology, Warangal. She has authored 81 papers for international conferences and journals. Her areas of interest include phase array antennas, ultra-wideband antennas, multiband antennas, fault diagnostics, neural networks, and metamaterials. She has over 30 years research/academic experience in the areas of RF and microwave systems/components and has executed over 15 projects sponsored by DST/AICTE/MHRD or Other Sponsored R&D project. Email:
摘要提出了一种新型的紧凑的宽带微波超材料吸波结构。吸收器结构设计在厚度为2.4 mm的FR4基板上。超材料吸收单元电池设计由W形和s形结构的组合组成,其中加入了分裂以产生分裂环谐振器的效果。所提出的单晶结构被设计为具有宽吸收带,其中包括X和Ku频段。优化后的晶胞尺寸为0.071 λ0 × 0.71 λ0, λ0为吸收带中心频率波长。ws型结构在大偏振角范围内吸收TE和TM波。仿真结果表明,在10.48 ~ 13.28 GHz范围内,吸收率在95%以上。此外,对于固定极化,在0°~ 60°的入射角范围内,吸收器的效率在92%以上。制作了单胞结构和阵列,并进行了测量。仿真结果与实测结果吻合良好。所提出的超材料可用于国防和雷达监视应用。关键词:超材料吸收器极化极化不敏感分环谐振器宽带披露声明作者未报告潜在的利益冲突。ramesh amugou于2013年在印度海得拉巴的贾瓦哈拉尔尼赫鲁理工大学获得电子和通信工程学士学位,并于2016年在印度苏拉特卡尔国立理工学院获得电子和通信工程系的硕士学位。目前,他正在印度瓦朗加尔国立理工学院电子与通信工程系攻读博士学位。他有超过3年的研究/学术经验。他是IEEE学生会员,印度NIT Warangal的IEEE- mtt和IEEE- aps的语音主席。相应的作者。Email: ar720057@student.nitw.ac.inVakula dameravula Damera毕业于印度安得拉邦龙树大学电子与通信工程学士学位。并获得了印度梅斯拉Birla理工学院的硕士学位。分别于1992年和1994年专注于微波专业,并于2010年获得印度瓦朗加尔国家理工学院天线阵列故障诊断博士学位。她是瓦朗加尔国家理工学院的教授。她在国际会议和期刊上发表了81篇论文。她的研究领域包括相控阵天线、超宽带天线、多频段天线、故障诊断、神经网络和超材料。她在射频和微波系统/组件领域拥有超过30年的研究/学术经验,并执行了超过15个由DST/AICTE/MHRD或其他赞助的研发项目。电子邮件:vakula@nitw.ac.in
{"title":"A Wideband DNG Metamaterial Absorber with WS-Shaped Split Ring Resonator for X- and Ku- Frequency Band Applications","authors":"Ramesh Amugothu, Vakula Damera","doi":"10.1080/02564602.2023.2260345","DOIUrl":"https://doi.org/10.1080/02564602.2023.2260345","url":null,"abstract":"AbstractA novel compact microwave metamaterial absorber structure with a wide bandwidth is proposed. The absorber structure is designed on an FR4 substrate with a 2.4 mm thickness. The metamaterial absorber unit cell design consists of a combination of W and S-shaped structures in which splits are incorporated to have the effect of a split ring resonator. The proposed unit cell structure is designed to have a wide absorption band, which includes the X and Ku frequency bands. The optimized dimension of the unit cell is 0.071 λ0 × 0.71 λ0 where λ0 is the wavelength of the center frequency of the absorption band. The WS-shaped structures are oriented to absorb TE and TM waves for a wide range of polarization angles. The simulation results of the unit cell have shown absorption above 95% from 10.48 to 13.28 GHz. In addition, the absorber has an efficiency above 92% for incidence angles from 0° to 60° for fixed polarization. The unit cell structure and array are fabricated, and measurements are performed. The simulation and measured results have shown good agreement. The proposed metamaterial can be used in defense and radar surveillance applications.KEYWORDS: Metamaterial absorberPolarizationPolarization insensitiveSplit ring resonatorWideband Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsRamesh AmugothuRamesh Amugothu received his Btech degree in electronics and communication engineering from Jawaharlal Nehru Technological University in Hyderabad, India, in 2013, and an Mtech degree in the department of electronics and communication engineering from the National Institute of Technology Surathkal, India, in 2016. Currently, he is pursuing his PhD degree in the department of electronics and communication engineering at the National Institute of Technology, Warangal, India. He has over 3 year’s research/academic experience. He is an IEEE student member, voice chair for IEEE-MTT and IEEE-APS at NIT Warangal, India. Corresponding author. Email: ar720057@student.nitw.ac.inVakula DameraVakula Damera received a bachelor’s degree in electronics and communication engineering from Nagarjuna University, Andhra Pradesh, India. And a master’s degree from the Birla Institute of Technology, Mesra, India. With a focus on microwave specialization in 1992 and 1994, respectively, and a PhD degree in fault diagnostics of antenna arrays from the National Institute of Technology, Warangal, India, in 2010. She is a professor at the National Institute of Technology, Warangal. She has authored 81 papers for international conferences and journals. Her areas of interest include phase array antennas, ultra-wideband antennas, multiband antennas, fault diagnostics, neural networks, and metamaterials. She has over 30 years research/academic experience in the areas of RF and microwave systems/components and has executed over 15 projects sponsored by DST/AICTE/MHRD or Other Sponsored R&D project. Email:","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136236962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Vertically Stacked Stepped Oxide Split-Pocket VTFET as a Label Free Biosensor 作为无标签生物传感器的垂直堆叠阶梯式氧化物分裂口袋VTFET
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-21 DOI: 10.1080/02564602.2023.2258502
Madhulika Verma, Sachin Agrawal, None Sujal, Mohit Meena
AbstractIn this manuscript, a new vertically stacked GaSb-source stepped oxide split-pocket vertical dielectrically modulated tunnel field effect transistor (SOSPVDMTFET) is presented for the first time. The novelty of this device lies in its stepped oxides with full gate length cavity and n + split-pockets in source region. These design features significantly suppress the ambipolar current at drain/channel junction and improves the drain current (ION), subthreshold swing (SS), threshold voltage (Vth), and current ratio (Iratio). In addition, it enhances the RF parameters such as transconductance (gm), maximum cut-off frequency (fT), transit time (τ), and device efficiency. It is found that the drain current sensitivity of the proposed device is 3000 times higher than the work reported in [Theja and Panchore, “Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor,” IEEE Trans. Nano Biosci., Vol. 22, no. 2, pp. 284–91, 2022]. Further, the behavior of biomolecules at different subcavity regions (R1, R2, R3) and cavity thickness has been investigated. The effect of non uniform distribution of biomolecule in cavity region is also discussed.KEYWORDS: Ambipolaritybiosensorstepped oxide (SO)split-pocket (SP)GaSb-source Stepped Oxide Split-Pocket Vertical Biosensor (SOSPVB) ACKNOWLEDGEMENTSThe authors would like to thank Dr. Shivendra Yadav from Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology, Surat, India for providing valuable suggestions and support to carry out this research work.DISCLOSURE STATEMENTNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsMadhulika VermaMadhulika Verma is currently pursuing the PhD degree with the ECE department from National Institute of Technology Delhi. She has completed her Mtech in micro-nano electronics (ECE) from PDPM IIITDM Jabalpur in 2017, and Btech in ECE from the IPEC Ghaziabad in 2013. Her area of interest is nanoscale devices and their biosensor applications. Email: madhulika53@nitdelhi.ac.inSachin AgrawalSachin Agrawal completed his PhD from IIITDM Jabalpur in 2018. He has completed his ME from Birla Institute of Technology Pilani, India in 2009. Currently, he is working as an assistant professor at National Institute of Technology Delhi. His area of interest is RF energy harvesting, antenna designing and mobile communication. SujalSujal is currently pursuing a Btech degree in electronics and communication engineering from National Institute of Technology Delhi, India (2020–2024). His current research interests include TFET. Email: 201220045@nitdelhi.ac.inMohit MeenaMohit Meena is currently pursuing a Btech degree in electronics and communication engineering from National Institute of Technology Delhi, India (2020–2024). His current research interests include TFET. Email: 201220029@nitdelhi.ac.in
摘要本文首次提出了一种新型的垂直堆叠gasb源阶梯氧化物裂口袋垂直介质调制隧道场效应晶体管(SOSPVDMTFET)。该器件的新颖之处在于其阶梯式氧化物具有全栅长腔和源区n +分裂袋。这些设计特点显著地抑制了漏极/通道结的双极电流,并改善了漏极电流(ION)、亚阈值摆幅(SS)、阈值电压(Vth)和电流比(Iratio)。此外,它还提高了射频参数,如跨导(gm)、最大截止频率(fT)、传输时间(τ)和器件效率。研究发现,该器件的漏极电流灵敏度比Theja和Panchore在《基于GaSb/Si异质结的栅极underlap和重叠垂直TFET生物传感器的性能调查》(IEEE Trans)中报道的工作高3000倍。纳米Biosci。,第22卷,no。[2],第284-91页,2022。此外,研究了生物分子在不同亚腔区(R1, R2, R3)和腔厚下的行为。讨论了生物分子在腔区不均匀分布的影响。关键词:双极性生物传感器阶梯式氧化物(SO)分裂口袋式(SP) gasb源阶梯式氧化物分裂口袋式垂直生物传感器(SOSPVB)致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢致谢披露声明作者未报告潜在的利益冲突。作者简介:madhulika Verma目前在德里国立理工学院ECE系攻读博士学位。她于2017年完成了PDPM iii itdm Jabalpur的微纳电子学(ECE)硕士学位,并于2013年完成了IPEC Ghaziabad的ECE学士学位。她感兴趣的领域是纳米级器件及其生物传感器应用。sachin Agrawal于2018年在印度贾巴尔普尔理工学院(IIITDM)获得博士学位。他于2009年完成了印度皮拉尼Birla理工学院的硕士学位。目前,他在德里国立理工学院担任助理教授。他的兴趣领域是射频能量收集,天线设计和移动通信。SujalSujal目前在印度德里国立理工学院攻读电子和通信工程学士学位(2020-2024)。目前主要研究方向为TFET。meenamhit Meena目前正在印度德里国立理工学院攻读电子和通信工程学士学位(2020-2024)。目前主要研究方向为TFET。电子邮件:201220029 @nitdelhi.ac.in
{"title":"Vertically Stacked Stepped Oxide Split-Pocket VTFET as a Label Free Biosensor","authors":"Madhulika Verma, Sachin Agrawal, None Sujal, Mohit Meena","doi":"10.1080/02564602.2023.2258502","DOIUrl":"https://doi.org/10.1080/02564602.2023.2258502","url":null,"abstract":"AbstractIn this manuscript, a new vertically stacked GaSb-source stepped oxide split-pocket vertical dielectrically modulated tunnel field effect transistor (SOSPVDMTFET) is presented for the first time. The novelty of this device lies in its stepped oxides with full gate length cavity and n + split-pockets in source region. These design features significantly suppress the ambipolar current at drain/channel junction and improves the drain current (ION), subthreshold swing (SS), threshold voltage (Vth), and current ratio (Iratio). In addition, it enhances the RF parameters such as transconductance (gm), maximum cut-off frequency (fT), transit time (τ), and device efficiency. It is found that the drain current sensitivity of the proposed device is 3000 times higher than the work reported in [Theja and Panchore, “Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor,” IEEE Trans. Nano Biosci., Vol. 22, no. 2, pp. 284–91, 2022]. Further, the behavior of biomolecules at different subcavity regions (R1, R2, R3) and cavity thickness has been investigated. The effect of non uniform distribution of biomolecule in cavity region is also discussed.KEYWORDS: Ambipolaritybiosensorstepped oxide (SO)split-pocket (SP)GaSb-source Stepped Oxide Split-Pocket Vertical Biosensor (SOSPVB) ACKNOWLEDGEMENTSThe authors would like to thank Dr. Shivendra Yadav from Department of Electronics Engineering, Sardar Vallabhbhai National Institute of Technology, Surat, India for providing valuable suggestions and support to carry out this research work.DISCLOSURE STATEMENTNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsMadhulika VermaMadhulika Verma is currently pursuing the PhD degree with the ECE department from National Institute of Technology Delhi. She has completed her Mtech in micro-nano electronics (ECE) from PDPM IIITDM Jabalpur in 2017, and Btech in ECE from the IPEC Ghaziabad in 2013. Her area of interest is nanoscale devices and their biosensor applications. Email: madhulika53@nitdelhi.ac.inSachin AgrawalSachin Agrawal completed his PhD from IIITDM Jabalpur in 2018. He has completed his ME from Birla Institute of Technology Pilani, India in 2009. Currently, he is working as an assistant professor at National Institute of Technology Delhi. His area of interest is RF energy harvesting, antenna designing and mobile communication. SujalSujal is currently pursuing a Btech degree in electronics and communication engineering from National Institute of Technology Delhi, India (2020–2024). His current research interests include TFET. Email: 201220045@nitdelhi.ac.inMohit MeenaMohit Meena is currently pursuing a Btech degree in electronics and communication engineering from National Institute of Technology Delhi, India (2020–2024). His current research interests include TFET. Email: 201220029@nitdelhi.ac.in","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"136236957","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analyzing the Performance of Transformer Oil-Paper Insulation with Aging Using Numerical Simulation Technique – A Review 用数值模拟技术分析变压器老化油纸绝缘性能综述
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-19 DOI: 10.1080/02564602.2023.2258494
Nisha Thanua, Ganesh B. Kumbhar
AbstractThe present article provides a comprehensive analysis of the aging phenomenon of transformer insulation and the corresponding changes in insulation performance that occur over time. The present manuscript outlines diverse insulating materials that are employed in transformers, the fundamental aging mechanism of the insulation, the function of space charges in the aging of the insulation, and various simulation methodologies utilized for diagnosing the insulation status of the transformer. The primary focus of this paper is to examine the various numerical techniques employed in modeling and analyzing the aging characteristics of transformer insulation. The mechanisms underlying the accumulation of charge and distortion of electric fields in insulation are explained through the utilization of numerical modeling techniques. This paper focuses on understanding the mechanism of insulation aging, thereby facilitating the optimization and maintenance of insulation performance throughout its operational lifespan.Keywords: Bipolar charge transport modelElectric fieldFinite element methodOil-paper insulationPlasma modelPower transformerSpace charges Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsNisha ThanuaNisha Thanua received her BTech and MTech degrees in electrical engineering from Aligarh Muslim University, Aligarh, India, in 2014 and 2017, respectively. Currently, she is a PhD candidate at the Department of Electrical Engineering of the Indian Institute of Technology Roorkee. Her research interests are transformer insulation aging, condition monitoring of transformers, multiphysics modeling, electrical insulation materials, computational electromagnetics, numerical techniques in electrostatics, and high-voltage engineering. Corresponding author. Email: nthanua@ee.iitr.ac.inGanesh B. KumbharGanesh B Kumbhar received the BE degree in electrical engineering from the Government College of Engineering, Karad, India, in 1999, the MTech degree from the Indian Institute of Technology Madras, Chennai, India, in 2002, and the PhD degree from the Indian Institute of Technology Bombay, Mumbai, India, in 2007. He was a postdoctoral research scholar with the Center for Energy System Research, Tennessee Technological University, Cookeville, TN, USA.Hewas also with Eaton Technologies Pvt. Ltd., (Eaton Corporation), Pune, India; Tata Consultancy Services, Mumbai, India; and Crompton Greaves, Ltd., Mumbai, India. He is currently an associate professor with the Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee, India. His research interests include high-voltage engineering, electromagnetic design and analysis of power apparatus, computational electromagnetics, and coupled-field modeling and simulations. Email: ganesh.kumbhar@ee.iitr.ac.in
摘要本文全面分析了变压器绝缘老化现象以及随着时间的推移而发生的相应绝缘性能变化。本文概述了变压器中使用的各种绝缘材料,绝缘的基本老化机制,空间电荷在绝缘老化中的作用,以及用于诊断变压器绝缘状态的各种模拟方法。本文的主要重点是研究各种用于模拟和分析变压器绝缘老化特性的数值技术。通过数值模拟技术解释了绝缘中电荷积累和电场畸变的机制。本文的重点是了解绝缘老化的机理,从而促进绝缘性能在其整个使用寿命期间的优化和维护。关键词:双极电荷输运模型电场有限元法纸绝缘等离子体模型电力变压器空间电荷披露声明作者未报告潜在的利益冲突。@ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @ @。@ @ @ @ @ @ @ @ @目前,她是印度理工学院鲁尔基电气工程系的博士研究生。主要研究方向为变压器绝缘老化、变压器状态监测、多物理场建模、电绝缘材料、计算电磁学、静电数值技术、高压工程等。相应的作者。B. KumbharGanesh B. Kumbhar于1999年获得印度卡拉德政府工程学院电子工程学士学位,2002年获得印度钦奈马德拉斯印度理工学院MTech学位,2007年获得印度孟买印度理工学院博士学位。美国田纳西州库克维尔田纳西理工大学能源系统研究中心博士后研究员。他还曾任职于印度浦那的Eaton Technologies Pvt. Ltd. (Eaton Corporation);塔塔咨询服务公司,孟买,印度;和印度孟买的克朗普顿格里夫斯有限公司。他目前是印度鲁尔基印度理工学院电子工程系的副教授。主要研究方向为高压工程、电力设备电磁设计与分析、计算电磁学、耦合场建模与仿真。电子邮件:ganesh.kumbhar@ee.iitr.ac.in
{"title":"Analyzing the Performance of Transformer Oil-Paper Insulation with Aging Using Numerical Simulation Technique – A Review","authors":"Nisha Thanua, Ganesh B. Kumbhar","doi":"10.1080/02564602.2023.2258494","DOIUrl":"https://doi.org/10.1080/02564602.2023.2258494","url":null,"abstract":"AbstractThe present article provides a comprehensive analysis of the aging phenomenon of transformer insulation and the corresponding changes in insulation performance that occur over time. The present manuscript outlines diverse insulating materials that are employed in transformers, the fundamental aging mechanism of the insulation, the function of space charges in the aging of the insulation, and various simulation methodologies utilized for diagnosing the insulation status of the transformer. The primary focus of this paper is to examine the various numerical techniques employed in modeling and analyzing the aging characteristics of transformer insulation. The mechanisms underlying the accumulation of charge and distortion of electric fields in insulation are explained through the utilization of numerical modeling techniques. This paper focuses on understanding the mechanism of insulation aging, thereby facilitating the optimization and maintenance of insulation performance throughout its operational lifespan.Keywords: Bipolar charge transport modelElectric fieldFinite element methodOil-paper insulationPlasma modelPower transformerSpace charges Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsNisha ThanuaNisha Thanua received her BTech and MTech degrees in electrical engineering from Aligarh Muslim University, Aligarh, India, in 2014 and 2017, respectively. Currently, she is a PhD candidate at the Department of Electrical Engineering of the Indian Institute of Technology Roorkee. Her research interests are transformer insulation aging, condition monitoring of transformers, multiphysics modeling, electrical insulation materials, computational electromagnetics, numerical techniques in electrostatics, and high-voltage engineering. Corresponding author. Email: nthanua@ee.iitr.ac.inGanesh B. KumbharGanesh B Kumbhar received the BE degree in electrical engineering from the Government College of Engineering, Karad, India, in 1999, the MTech degree from the Indian Institute of Technology Madras, Chennai, India, in 2002, and the PhD degree from the Indian Institute of Technology Bombay, Mumbai, India, in 2007. He was a postdoctoral research scholar with the Center for Energy System Research, Tennessee Technological University, Cookeville, TN, USA.Hewas also with Eaton Technologies Pvt. Ltd., (Eaton Corporation), Pune, India; Tata Consultancy Services, Mumbai, India; and Crompton Greaves, Ltd., Mumbai, India. He is currently an associate professor with the Department of Electrical Engineering, Indian Institute of Technology Roorkee, Roorkee, India. His research interests include high-voltage engineering, electromagnetic design and analysis of power apparatus, computational electromagnetics, and coupled-field modeling and simulations. Email: ganesh.kumbhar@ee.iitr.ac.in","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135107444","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Wide-Angle Scanning Microstrip Patch Antenna Array for mmWave Applications with High Gain 用于高增益毫米波应用的广角扫描微带贴片天线阵列
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-13 DOI: 10.1080/02564602.2023.2255544
Anil Kumar Yerrola, Maifuz Ali, Ravi Kumar Arya, Lakhindar Murmu, Ashwani Kumar
AbstractThis paper presents a modified rectangular microstrip patch antenna (MRMPA) array conforming to the hemisphere for wide-angle beam scanning. Two different conformal antenna array designs are presented in this work. The first of these designs, a 13-element MRMPA array conformal to the surface of a circular arc, and the second one, a 9-element array conformal to the surface of a hemisphere, are designed and optimized. The geometrical approach of calculating the phase value is used to calculate the phase value of each antenna. The simulated results show that the 13-element conformal MRMPA array is achieving a beam scanning angle of ±84° with a gain of 13.89 dBi with low side lobe levels, and further, the gain of the array is enhanced by a dielectric superstrate that improved the gain by ∼2 dBi at all the scanning angles. Second, an MRMPA array conformal to a hemisphere with nine elements is designed with beam scanning ability from φ = 0°−360° and θ = ±30° with a gain of 15.69 dBi, and further, the gain is enhanced by ∼3 dBi with the dielectric superstrate. Full-wave simulations have proven both designs to be accurate and aligned with theoretical calculations.KEYWORDS: Antenna arraysBeam scanningmmWaveScan lossSuperstrate ACKNOWLEDGMENTThe authors would like to thank IIIT Naya Raipur for providing support.Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsAnil Kumar YerrolaAnil Kumar Yerrola, received BTech degree in electronics communication engineering from VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, T.S, and MTech degree in VLSI systems design from JNTUH, Hyderabad, Telangana, India in 2009 and 2013 respectively. Having 6 years of teaching experience currently he is working toward his PhD degree at Dr. SPM International Institute of Information Technology, Naya Raipur. His research interests include mm-wave antennas, beam forming networks and electromagnetic fields. Corresponding author. Email: anil@iiitnr.edu.inMaifuz AliMaifuz Ali was born in Sabalmara, West- Midna pure, India. He received PhD degree in electronics and electrical communication engineering from Indian Institute of Technology, Kharagpur, India, in 2010. He received the Brain Korea Research Fellowship in 2010 and was a postdoctoral researcher at the Korea Advanced Institute of Science and Technology, Daejeon, Korea, until 2012. Since 2012, he has been a postdoctoral researcher at the Tokyo Institute of Technology, Tokyo, Japan. He is a member of IEEE His main research interests include high-frequency diffraction theory, such as physical optics and geometrical theory of diffraction. His research also covers the design of reflector antennae, electromagnetic field sensors, wireless channel modeling, and antenna. Email: maifuzali@iiitnr.edu.inRavi Kumar AryaRavi Kumar Arya is a distinguished professor at Xiangshan Laboratory (XSL), Zhongshan Institute of Changchun University o
摘要本文提出了一种改进的半球型矩形微带贴片天线(MRMPA)阵列,用于广角波束扫描。本文介绍了两种不同的共形天线阵设计。设计并优化了一种与圆弧表面共形的13元MRMPA阵列和一种与半球表面共形的9元MRMPA阵列。采用几何方法计算各天线的相位值。仿真结果表明,13元共形MRMPA阵列在低旁瓣电平下的波束扫描角为±84°,增益为13.89 dBi,此外,在所有扫描角度下,介质叠加层的增益都提高了~ 2 dBi。其次,设计了一个与九元半球共形的MRMPA阵列,该阵列具有φ = 0°~ 360°和θ =±30°的波束扫描能力,增益为15.69 dBi,并通过介质层使增益提高了~ 3 dBi。全波模拟已经证明这两种设计都是准确的,并且与理论计算一致。关键词:天线阵列波束扫描毫米波扫描损耗叠加致谢作者要感谢IIIT Naya Raipur的支持。披露声明作者未报告潜在的利益冲突。anil Kumar Yerrola,分别于2009年和2013年获得印度海得拉巴VNR Vignana Jyothi工程技术学院电子通信工程学士学位和印度泰伦加纳邦海得拉巴JNTUH VLSI系统设计硕士学位。他拥有6年的教学经验,目前正在Naya Raipur的SPM国际信息技术研究所攻读博士学位。主要研究方向为毫米波天线、波束形成网络和电磁场。相应的作者。Email: anil@iiitnr.edu.inMaifuz Ali aifuz Ali出生于印度西米德纳邦的萨巴尔马拉。他于2010年获得印度理工学院电子与电气通信工程博士学位。他于2010年获得Brain Korea研究奖学金,并于2012年在韩国大田的韩国科学技术院担任博士后研究员。2012年起在日本东京工业大学从事博士后研究。主要研究方向为高频衍射理论,如物理光学和几何衍射理论。他的研究还包括反射天线、电磁场传感器、无线信道建模和天线的设计。Kumar Arya,中国广东省中山市长春科技大学中山学院香山实验室特聘教授。他在美国宾夕法尼亚州立大学获得电气工程博士学位,师从RajMittra教授。他在印度理工学院获得射频和微波工程硕士学位,并在德里理工大学获得学士学位。在加入浙江科大之前,他曾在学术界和工业界工作多年。他在高级期刊和会议论文集上发表了70多篇技术论文,其中包括7本书章节。他的研究兴趣包括天线设计、计算电磁学、机器学习应用和3D建模。MurmuLakhindar Murmu于2009年获得印度西孟加拉邦理工大学Kalyani政府工程学院学士学位,并于2011年获得印度希布尔工程科学与技术学院硕士学位。他获得印度理工学院(Indian School of Mines)微波工程博士学位。Murmu在国际知名期刊和会议论文集上发表了几篇文章。2019年,他加入了纳亚赖布尔Shyama Prasad Mukherjee博士国际信息技术研究所,担任助理教授。主要研究方向为平面微带天线多波段微带带通滤波器设计、滤波器设计中的缺陷接地结构(DGS)。Email: lakhindar@iiitnr.edu.inAshwani KumarAshwani Kumar, 2006年毕业于印度德里大学电子科学系,获微波电子学硕士学位,2014年获电子学博士学位。2016年至2017年在美国佛罗里达州奥兰多市中佛罗里达大学电气与计算机工程系进行博士后研究。
{"title":"Wide-Angle Scanning Microstrip Patch Antenna Array for mmWave Applications with High Gain","authors":"Anil Kumar Yerrola, Maifuz Ali, Ravi Kumar Arya, Lakhindar Murmu, Ashwani Kumar","doi":"10.1080/02564602.2023.2255544","DOIUrl":"https://doi.org/10.1080/02564602.2023.2255544","url":null,"abstract":"AbstractThis paper presents a modified rectangular microstrip patch antenna (MRMPA) array conforming to the hemisphere for wide-angle beam scanning. Two different conformal antenna array designs are presented in this work. The first of these designs, a 13-element MRMPA array conformal to the surface of a circular arc, and the second one, a 9-element array conformal to the surface of a hemisphere, are designed and optimized. The geometrical approach of calculating the phase value is used to calculate the phase value of each antenna. The simulated results show that the 13-element conformal MRMPA array is achieving a beam scanning angle of ±84° with a gain of 13.89 dBi with low side lobe levels, and further, the gain of the array is enhanced by a dielectric superstrate that improved the gain by ∼2 dBi at all the scanning angles. Second, an MRMPA array conformal to a hemisphere with nine elements is designed with beam scanning ability from φ = 0°−360° and θ = ±30° with a gain of 15.69 dBi, and further, the gain is enhanced by ∼3 dBi with the dielectric superstrate. Full-wave simulations have proven both designs to be accurate and aligned with theoretical calculations.KEYWORDS: Antenna arraysBeam scanningmmWaveScan lossSuperstrate ACKNOWLEDGMENTThe authors would like to thank IIIT Naya Raipur for providing support.Disclosure statementNo potential conflict of interest was reported by the author(s).Additional informationNotes on contributorsAnil Kumar YerrolaAnil Kumar Yerrola, received BTech degree in electronics communication engineering from VNR Vignana Jyothi Institute of Engineering and Technology, Hyderabad, T.S, and MTech degree in VLSI systems design from JNTUH, Hyderabad, Telangana, India in 2009 and 2013 respectively. Having 6 years of teaching experience currently he is working toward his PhD degree at Dr. SPM International Institute of Information Technology, Naya Raipur. His research interests include mm-wave antennas, beam forming networks and electromagnetic fields. Corresponding author. Email: anil@iiitnr.edu.inMaifuz AliMaifuz Ali was born in Sabalmara, West- Midna pure, India. He received PhD degree in electronics and electrical communication engineering from Indian Institute of Technology, Kharagpur, India, in 2010. He received the Brain Korea Research Fellowship in 2010 and was a postdoctoral researcher at the Korea Advanced Institute of Science and Technology, Daejeon, Korea, until 2012. Since 2012, he has been a postdoctoral researcher at the Tokyo Institute of Technology, Tokyo, Japan. He is a member of IEEE His main research interests include high-frequency diffraction theory, such as physical optics and geometrical theory of diffraction. His research also covers the design of reflector antennae, electromagnetic field sensors, wireless channel modeling, and antenna. Email: maifuzali@iiitnr.edu.inRavi Kumar AryaRavi Kumar Arya is a distinguished professor at Xiangshan Laboratory (XSL), Zhongshan Institute of Changchun University o","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135783998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Design and Investigation of a Super Wideband Antenna with Dual-Band Notch Characteristics for MIMO Application MIMO超宽带双陷波天线的设计与研究
4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-09-12 DOI: 10.1080/02564602.2023.2255553
Sachin Agrawal, Manoj Singh Parihar
A printed monopole super wideband (SWB) antenna is presented in this paper. It consists of a beveled-shaped radiator and a tapered ground plane. It is investigated that tapering of the radiator and ground plane enhances the impedance matching and results in broad impedance bandwidth. The experimental result depicts that the antenna achieved 164.9% impedance bandwidth from 2.6 to 27.27 GHz. Furthermore, to prevent the interference caused by communication systems within the ultra-wideband (UWB) range, dual-band rejection at Wi-MAX (2.7–4 GHz). and X-band (8.5–12 GHz) are introduced by etching an H-shape and two back-to-back C-shaped notches in the radiator and feedline, respectively. The measured result demonstrates that both slots effectively reject the desired frequency bands with a small shift in the lower frequency edge from 2.41 to 2.6 GHz. In addition, the proposed antenna application is shown in the two elements MIMO system where a bowtie decoupling structure is utilized to improve the isolation. It is found that the presence of a decoupling structure improves the isolation by up to 60%. To characterize the diversity performance, parameters such as Diversity Gain (DG), Envelop Correlation Coefficient (ECC), Channel Capacity Loss (CCL), and Mean Effective Gain (MEG) are calculated and all are found in the acceptable limit.
介绍了一种印刷单极超宽带天线。它由一个斜形散热器和一个锥形接地面组成。研究了辐射体与地平面的逐渐变细可以增强阻抗匹配,从而获得更宽的阻抗带宽。实验结果表明,该天线在2.6 ~ 27.27 GHz范围内阻抗带宽达到164.9%。此外,为了防止超宽带(UWB)范围内通信系统造成的干扰,在Wi-MAX (2.7-4 GHz)下进行双频抑制。和x波段(8.5 - 12ghz)分别通过在散热器和馈线上刻蚀一个h形和两个背靠背的c形缺口来引入。测量结果表明,在2.41 GHz到2.6 GHz的范围内,两个槽都能有效地抑制所需的频段,并且低频边缘有较小的偏移。此外,本文还展示了该天线在双元MIMO系统中的应用,该系统采用领结解耦结构来提高隔离度。发现解耦结构的存在使隔振性提高了60%。为了描述分集性能,计算了诸如分集增益(DG)、包络相关系数(ECC)、信道容量损耗(CCL)和平均有效增益(MEG)等参数,并发现它们都在可接受的范围内。
{"title":"The Design and Investigation of a Super Wideband Antenna with Dual-Band Notch Characteristics for MIMO Application","authors":"Sachin Agrawal, Manoj Singh Parihar","doi":"10.1080/02564602.2023.2255553","DOIUrl":"https://doi.org/10.1080/02564602.2023.2255553","url":null,"abstract":"A printed monopole super wideband (SWB) antenna is presented in this paper. It consists of a beveled-shaped radiator and a tapered ground plane. It is investigated that tapering of the radiator and ground plane enhances the impedance matching and results in broad impedance bandwidth. The experimental result depicts that the antenna achieved 164.9% impedance bandwidth from 2.6 to 27.27 GHz. Furthermore, to prevent the interference caused by communication systems within the ultra-wideband (UWB) range, dual-band rejection at Wi-MAX (2.7–4 GHz). and X-band (8.5–12 GHz) are introduced by etching an H-shape and two back-to-back C-shaped notches in the radiator and feedline, respectively. The measured result demonstrates that both slots effectively reject the desired frequency bands with a small shift in the lower frequency edge from 2.41 to 2.6 GHz. In addition, the proposed antenna application is shown in the two elements MIMO system where a bowtie decoupling structure is utilized to improve the isolation. It is found that the presence of a decoupling structure improves the isolation by up to 60%. To characterize the diversity performance, parameters such as Diversity Gain (DG), Envelop Correlation Coefficient (ECC), Channel Capacity Loss (CCL), and Mean Effective Gain (MEG) are calculated and all are found in the acceptable limit.","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"135886203","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A Survey on Security and Privacy Challenges in State-of-the-Art Microfluidic Biochips 最先进的微流控生物芯片的安全和隐私挑战调查
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-08-24 DOI: 10.1080/02564602.2023.2245343
Debasis Gountia, Rakesh Ranjan Behera, Sushreeta Tripathy, Ranjita Champati, Swarna Lata Pati
{"title":"A Survey on Security and Privacy Challenges in State-of-the-Art Microfluidic Biochips","authors":"Debasis Gountia, Rakesh Ranjan Behera, Sushreeta Tripathy, Ranjita Champati, Swarna Lata Pati","doi":"10.1080/02564602.2023.2245343","DOIUrl":"https://doi.org/10.1080/02564602.2023.2245343","url":null,"abstract":"","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":" ","pages":""},"PeriodicalIF":2.4,"publicationDate":"2023-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49449861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Editorial 编辑
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-08-23 DOI: 10.1080/02564602.2023.2244826
Mamidala Jagadesh Kumar
The Indian Institutes of Technology (IITs) have played a pivotal role in shaping the India’s education landscape, particularly in technical education. With decades of experience and rich contributions, IITs have been adapting to meet the changing demands of the educational needs in India. Implementing the National Education Policy (NEP-2020) has opened up new avenues for IITs to further their impact on higher education in the country. This editorial explores how IITs are embracing NEP2020 and introducing significant reforms to create a more inclusive, multidisciplinary, and transformative educational system.
印度理工学院在塑造印度教育格局方面发挥了关键作用,尤其是在技术教育方面。凭借数十年的经验和丰富的贡献,印度理工学院一直在适应印度不断变化的教育需求。实施《国家教育政策》(NEP-2020)为IIT进一步影响该国高等教育开辟了新的途径。这篇社论探讨了IIT如何接受《2020年国家环境政策》,并引入重大改革,以创建一个更具包容性、多学科和变革性的教育体系。
{"title":"Editorial","authors":"Mamidala Jagadesh Kumar","doi":"10.1080/02564602.2023.2244826","DOIUrl":"https://doi.org/10.1080/02564602.2023.2244826","url":null,"abstract":"The Indian Institutes of Technology (IITs) have played a pivotal role in shaping the India’s education landscape, particularly in technical education. With decades of experience and rich contributions, IITs have been adapting to meet the changing demands of the educational needs in India. Implementing the National Education Policy (NEP-2020) has opened up new avenues for IITs to further their impact on higher education in the country. This editorial explores how IITs are embracing NEP2020 and introducing significant reforms to create a more inclusive, multidisciplinary, and transformative educational system.","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":"40 1","pages":"609 - 610"},"PeriodicalIF":2.4,"publicationDate":"2023-08-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43328531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integration of SCADA and Industrial IoT: Opportunities and Challenges SCADA与工业物联网的整合:机遇与挑战
IF 2.4 4区 计算机科学 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2023-08-21 DOI: 10.1080/02564602.2023.2246426
A. Nechibvute, H. Mafukidze
{"title":"Integration of SCADA and Industrial IoT: Opportunities and Challenges","authors":"A. Nechibvute, H. Mafukidze","doi":"10.1080/02564602.2023.2246426","DOIUrl":"https://doi.org/10.1080/02564602.2023.2246426","url":null,"abstract":"","PeriodicalId":13252,"journal":{"name":"IETE Technical Review","volume":" ","pages":""},"PeriodicalIF":2.4,"publicationDate":"2023-08-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49252177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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