Pub Date : 2025-08-04DOI: 10.1109/TTHZ.2025.3595813
Thomas Ufschlag;Benjamin Schoch;Lukas Gebert;Dominik Wrana;Axel Tessmann;Ingmar Kallfass
This article presents a reactively matched submillimeter-wave power amplifier with a measured record large-signal bandwidth of 40$,$%. Coverage of the entire WR-3.4 waveguide band from 220 to $text{330} ,mathrm{G}mathrm{Hz}$ is enabled by applying an impedance-transforming four-way in-phase power combiner structure. For the first time, the usage of an impedance-transforming Wilkinson power combiner that does not require additional lossy matching elements in conjunction with two direct parallelizations for facilitating the novel broadband low-loss four-way power combining is proposed for submillimeter wave applications. A crucial step for obtaining a broadband large-signal bandwidth is the optimization of the value of the intermediate impedance between the impedance transforming Wilkinson and the two direct parallelizations, which can be performed by the derived equation for the proposed combiner structure. Applying the presented technique solves the bandwidth limitation for the power matching of the final stage for reactively matched power amplifiers and hence, enables a maximum power bandwidth. This broadband large-signal bandwidth is mandatory for high-capacity communication and high-resolution sensing applications. Besides the state-of-the-art large-signal bandwidth, a state-of-the-art PAE of $text{4.6} ,%$ for indium gallium arsenide-based designs is achieved when the power amplifier is driven at its 1-dB compressed output power level of 8.1 dBm at $text{300} ,mathrm{G}mathrm{Hz}$.
{"title":"Reactively Matched WR-3.4 Power Amplifier With a Large-Signal Bandwidth of 40 % Enabled by an Impedance-Optimized Transforming Wilkinson","authors":"Thomas Ufschlag;Benjamin Schoch;Lukas Gebert;Dominik Wrana;Axel Tessmann;Ingmar Kallfass","doi":"10.1109/TTHZ.2025.3595813","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3595813","url":null,"abstract":"This article presents a reactively matched submillimeter-wave power amplifier with a measured record large-signal bandwidth of 40<inline-formula><tex-math>$,$</tex-math></inline-formula>%. Coverage of the entire WR-3.4 waveguide band from 220 to <inline-formula><tex-math>$text{330} ,mathrm{G}mathrm{Hz}$</tex-math></inline-formula> is enabled by applying an impedance-transforming four-way in-phase power combiner structure. For the first time, the usage of an impedance-transforming Wilkinson power combiner that does not require additional lossy matching elements in conjunction with two direct parallelizations for facilitating the novel broadband low-loss four-way power combining is proposed for submillimeter wave applications. A crucial step for obtaining a broadband large-signal bandwidth is the optimization of the value of the intermediate impedance between the impedance transforming Wilkinson and the two direct parallelizations, which can be performed by the derived equation for the proposed combiner structure. Applying the presented technique solves the bandwidth limitation for the power matching of the final stage for reactively matched power amplifiers and hence, enables a maximum power bandwidth. This broadband large-signal bandwidth is mandatory for high-capacity communication and high-resolution sensing applications. Besides the state-of-the-art large-signal bandwidth, a state-of-the-art PAE of <inline-formula><tex-math>$text{4.6} ,%$</tex-math></inline-formula> for indium gallium arsenide-based designs is achieved when the power amplifier is driven at its 1-dB compressed output power level of 8.1 dBm at <inline-formula><tex-math>$text{300} ,mathrm{G}mathrm{Hz}$</tex-math></inline-formula>.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 2","pages":"179-192"},"PeriodicalIF":3.9,"publicationDate":"2025-08-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146102977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A 0.3-THz push–push voltage-controlled oscillator (VCO) fabricated in 130-nm SiGe BiCMOS technology is presented in this article. To address the challenges of low output power (P$_{text{OUT}}$) and low efficiency in high-frequency VCOs, the common-mode (CM) short-circuit total reflection for harmonic enhancement by adding transmission lines (TLs) and grounding capacitors is proposed. This method is applicable to all types of second-harmonic-enhanced circuits operating at high frequencies. Furthermore, a broadband $pi$-matching network and TLs are utilized to enhance wide-band extracted P$_{text{OUT}}$ and optimize phase noise. The proposed VCO operating in the range of 287–304 GHz delivers a peak P$_{text{OUT}}$ of 3.61 dBm (2.3 mW), with a dc-to-RF efficiency of 2.93%. A phase noise of -112 dBc/Hz and the figure of merit (FoM and FoM$_{text{T}}$) of -186.1 and -181.3 dBc/Hz at 10 MHz offset can be achieved, respectively. The whole chip occupies an area of 0.63× 0.44 mm$^{2}$ including pads. As compared with state-of-the-art VCOs working above 250 GHz by both Si-based and InP technologies, the VCO presented in this work exhibits competitive performance over all properties.
{"title":"A 0.3-THz Reflection-Based Harmonic Enhanced Push–Push VCO With 2.3-mW $P_{text{OUT}}$ in 130-nm SiGe BiCMOS Technology","authors":"Wentao Zhu;Rui Zhang;Dawei Tang;Rui Zhou;Zhigang Peng;Sidou Zheng;Zekun Li;Si-yuan Tang;Peigen Zhou;Jixin Chen;Wei Hong","doi":"10.1109/TTHZ.2025.3594907","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3594907","url":null,"abstract":"A 0.3-THz push–push voltage-controlled oscillator (VCO) fabricated in 130-nm SiGe BiCMOS technology is presented in this article. To address the challenges of low output power (<italic>P</i><inline-formula><tex-math>$_{text{OUT}}$</tex-math></inline-formula>) and low efficiency in high-frequency VCOs, the common-mode (CM) short-circuit total reflection for harmonic enhancement by adding transmission lines (TLs) and grounding capacitors is proposed. This method is applicable to all types of second-harmonic-enhanced circuits operating at high frequencies. Furthermore, a broadband <inline-formula><tex-math>$pi$</tex-math></inline-formula>-matching network and TLs are utilized to enhance wide-band extracted <italic>P</i><inline-formula><tex-math>$_{text{OUT}}$</tex-math></inline-formula> and optimize phase noise. The proposed VCO operating in the range of 287–304 GHz delivers a peak <italic>P</i><inline-formula><tex-math>$_{text{OUT}}$</tex-math></inline-formula> of 3.61 dBm (2.3 mW), with a dc-to-RF efficiency of 2.93%. A phase noise of -112 dBc/Hz and the figure of merit (<italic>FoM</i> and <italic>FoM</i><inline-formula><tex-math>$_{text{T}}$</tex-math></inline-formula>) of -186.1 and -181.3 dBc/Hz at 10 MHz offset can be achieved, respectively. The whole chip occupies an area of 0.63× 0.44 mm<inline-formula><tex-math>$^{2}$</tex-math></inline-formula> including pads. As compared with state-of-the-art VCOs working above 250 GHz by both Si-based and InP technologies, the VCO presented in this work exhibits competitive performance over all properties.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 2","pages":"165-178"},"PeriodicalIF":3.9,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146102949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A silicon waveguide-based interconnection is proposed for terahertz on-chip communications in the 300-GHz band, featuring the integration of a uni-traveling-carrier photodiode as a transmitter and a resonant tunneling diode as a receiver. The interconnection achieves low transmission loss over a broad bandwidth spanning the WR-2.8 band (260–390 GHz). Experimental results successfully demonstrate intermediate frequency transmission at a data rate of up to 100 Gb/s using 32-QAM modulation, with the bit error rate remaining within the hard-decision forward-error correction limit. These achievements highlight the potential of the proposed interconnection scheme to advance high-performance, compact, and scalable terahertz integrated systems for next-generation communications applications.
{"title":"Terahertz On-Chip Communications With Hybrid Electronic-Photonic Interconnects","authors":"Daiki Ichikawa;Weijie Gao;Nguyen H. Ngo;Takahiro Ohara;Michihiko Tanaka;Shuichi Murakami;Yoshiharu Yamada;Hidemasa Yamane;Yosuke Nishida;Masayuki Fujita;Tadao Nagatsuma","doi":"10.1109/TTHZ.2025.3594895","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3594895","url":null,"abstract":"A silicon waveguide-based interconnection is proposed for terahertz on-chip communications in the 300-GHz band, featuring the integration of a uni-traveling-carrier photodiode as a transmitter and a resonant tunneling diode as a receiver. The interconnection achieves low transmission loss over a broad bandwidth spanning the WR-2.8 band (260–390 GHz). Experimental results successfully demonstrate intermediate frequency transmission at a data rate of up to 100 Gb/s using 32-QAM modulation, with the bit error rate remaining within the hard-decision forward-error correction limit. These achievements highlight the potential of the proposed interconnection scheme to advance high-performance, compact, and scalable terahertz integrated systems for next-generation communications applications.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"751-762"},"PeriodicalIF":3.9,"publicationDate":"2025-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998376","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-31DOI: 10.1109/TTHZ.2025.3594501
Milan Deumer;Oliver Stiewe;Lars Liebermeister;Simon Nellen;Robert Elschner;Ronald Freund;Martin Schell;Robert B. Kohlhaas
Photomixers, which convert optical signals into high-frequency electrical signals, are promising sources and detectors for terahertz (THz) wireless communications due to their broad tunability, high bandwidth, and easy integration with fiber-optic networks. Photodiode (PD)-based THz emitters are already the state-of-the-art for highest data rate THz wireless links. Photonic THz receivers, such as photoconductive antennas (PCAs), have the same benefits of high THz bandwidth and potentially the same very low phase-noise as PD emitters. However, PCAs have not yet demonstrated competitive receiver performance compared to electronic mixers. This limitation arises from the restricted conversion gain and intermediate frequency (IF) bandwidth of the top-illuminated PCAs used in current systems. In this work, we present a novel photomixing heterodyne THz receiver based on waveguide-integrated (win) PCAs, which offers a 25 dB increase in conversion gain due to benefits arising from the optical waveguide coupling. We design and optimize a high-frequency package for the win-PCAs, achieving a record 3- and 6-dB IF bandwidth of 25 and 40 GHz, respectively. With this receiver, we now attain gross data rates of up to 84 Gbit/s, which is a new record for photonic wireless links with PCA receivers. At the same time, we demonstrate the ultra-broadband operation capabilities of the win-PCA, enabling data transmission at carrier frequencies from 100 to 600 GHz with the same receiver.
{"title":"Ultra-Broadband Photonic Receiver for (Sub-) THz Communication Between 100 and 600 GHz Enabling Line Rates Up to 84 Gbit/s","authors":"Milan Deumer;Oliver Stiewe;Lars Liebermeister;Simon Nellen;Robert Elschner;Ronald Freund;Martin Schell;Robert B. Kohlhaas","doi":"10.1109/TTHZ.2025.3594501","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3594501","url":null,"abstract":"Photomixers, which convert optical signals into high-frequency electrical signals, are promising sources and detectors for terahertz (THz) wireless communications due to their broad tunability, high bandwidth, and easy integration with fiber-optic networks. Photodiode (PD)-based THz emitters are already the state-of-the-art for highest data rate THz wireless links. Photonic THz receivers, such as photoconductive antennas (PCAs), have the same benefits of high THz bandwidth and potentially the same very low phase-noise as PD emitters. However, PCAs have not yet demonstrated competitive receiver performance compared to electronic mixers. This limitation arises from the restricted conversion gain and intermediate frequency (IF) bandwidth of the top-illuminated PCAs used in current systems. In this work, we present a novel photomixing heterodyne THz receiver based on waveguide-integrated (win) PCAs, which offers a 25 dB increase in conversion gain due to benefits arising from the optical waveguide coupling. We design and optimize a high-frequency package for the win-PCAs, achieving a record 3- and 6-dB IF bandwidth of 25 and 40 GHz, respectively. With this receiver, we now attain gross data rates of up to 84 Gbit/s, which is a new record for photonic wireless links with PCA receivers. At the same time, we demonstrate the ultra-broadband operation capabilities of the win-PCA, enabling data transmission at carrier frequencies from 100 to 600 GHz with the same receiver.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"16 1","pages":"35-41"},"PeriodicalIF":3.9,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11106291","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145778300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-31DOI: 10.1109/TTHZ.2025.3594070
George A. H. France;Mozhdeh Mohammadpour;Riccardo Degl'Innocenti;Massimo Peruffo;Hungyen Lin
Perfluorinated sulfonic acid (PFSA) membranes are renowned for their unique proton conduction and chemical/mechanical stability. As water plays a crucial role in their proton conduction that changes with environmental humidity, here we evaluate the robustness of our recently proposed humidity-controlled terahertz time-domain spectroscopy (THz-TDS) on commercially available membranes with different morphologies to quantify water uptake (WU) and states for direct comparison against literature values. We further apply the technique to resolve membrane hygral swelling and shrinkage during humidity cycles towards future dimensional stability evaluation. As a whole, this work highlights the broad applicability of humidity-controlled THz-TDS for testing PFSA membranes for future product optimizations.
{"title":"Probing Water Properties of Perfluorinated Sulfonic-Acid Membranes With Humidity-Controlled Terahertz Time-Domain Spectroscopy","authors":"George A. H. France;Mozhdeh Mohammadpour;Riccardo Degl'Innocenti;Massimo Peruffo;Hungyen Lin","doi":"10.1109/TTHZ.2025.3594070","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3594070","url":null,"abstract":"Perfluorinated sulfonic acid (PFSA) membranes are renowned for their unique proton conduction and chemical/mechanical stability. As water plays a crucial role in their proton conduction that changes with environmental humidity, here we evaluate the robustness of our recently proposed humidity-controlled terahertz time-domain spectroscopy (THz-TDS) on commercially available membranes with different morphologies to quantify water uptake (WU) and states for direct comparison against literature values. We further apply the technique to resolve membrane hygral swelling and shrinkage during humidity cycles towards future dimensional stability evaluation. As a whole, this work highlights the broad applicability of humidity-controlled THz-TDS for testing PFSA membranes for future product optimizations.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"743-750"},"PeriodicalIF":3.9,"publicationDate":"2025-07-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-30DOI: 10.1109/TTHZ.2025.3594154
Ting Zhang;Hao Zhang;He Zhu;Jingyu Lin;Xiaojing Huang;Jia Du;Yang Yang
In this article, we present a high-speed, real-time wireless communication system demonstration with a 50 Gigabits per second (Gb/s) raw data rate at 252 GHz. A field programmable gate array baseband module is developed for two 5 GHz bandwidth channels with digital-to-analog converters and analog-to-digital converters sampling at 4.8 Giga-sample per second, each capable of transmitting and receiving Ethernet traffic in real time at a 25 Gb/s raw data rate with 64 quadrature amplitude modulation. Both transmitter and receiver frontends consist of two frequency-conversion stages at intermediate frequency (5–16 GHz) and THz frequency (235–270 GHz), respectively, with high-selectivity bandpass filters applied in both stages. Details of the filter's design principle and fabrication process are provided in this article. The wireless communication link is demonstrated over a distance of 0.4 m in the laboratory environment with a coherent local oscillator setup, and an uncoded bit error rate of 1 × 10−3 was acquired. The high-speed and real-time feature makes this system a competent candidate for future wireless applications, including point-to-point communications, backhauls, and intersatellite communications in the sixth-generation era.
{"title":"A 50 Gb/s Real-Time Wireless Communication System at 252 GHz Using FPGA Baseband Modem","authors":"Ting Zhang;Hao Zhang;He Zhu;Jingyu Lin;Xiaojing Huang;Jia Du;Yang Yang","doi":"10.1109/TTHZ.2025.3594154","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3594154","url":null,"abstract":"In this article, we present a high-speed, real-time wireless communication system demonstration with a 50 Gigabits per second (Gb/s) raw data rate at 252 GHz. A field programmable gate array baseband module is developed for two 5 GHz bandwidth channels with digital-to-analog converters and analog-to-digital converters sampling at 4.8 Giga-sample per second, each capable of transmitting and receiving Ethernet traffic in real time at a 25 Gb/s raw data rate with 64 quadrature amplitude modulation. Both transmitter and receiver frontends consist of two frequency-conversion stages at intermediate frequency (5–16 GHz) and THz frequency (235–270 GHz), respectively, with high-selectivity bandpass filters applied in both stages. Details of the filter's design principle and fabrication process are provided in this article. The wireless communication link is demonstrated over a distance of 0.4 m in the laboratory environment with a coherent local oscillator setup, and an uncoded bit error rate of 1 × 10<sup>−3</sup> was acquired. The high-speed and real-time feature makes this system a competent candidate for future wireless applications, including point-to-point communications, backhauls, and intersatellite communications in the sixth-generation era.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 6","pages":"1055-1067"},"PeriodicalIF":3.9,"publicationDate":"2025-07-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145435686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Terahertz (THz) technology has been widely used in astronomical observation where blocked impurity band (BIB) terahertz detectors are key components for acquiring THz signals in space scenario. In this study, we proposed the integration of a plasmonic micronano structure onto Ge:Ga BIB detector and successfully realized the enhancement of the THz response performance. The BIB detector integrated with plasmonic structure shows a 64.5% improvement in blackbody responsivity under 4-K and 300-mV bias. The peak detectivity and noise equivalent power are also significantly improved, 7.0 × 1014 Jones and 7.0 × 10−17 W/Hz1/2, respectively. It is revealed that hot-electron effect arisen from the plasmonic excitation plays key role in the detector performance improvement. This work provides a new perspective for the development of high-sensitivity THz detectors.
{"title":"Hot-Electron Enhanced Photoresponse of Blocked Impurity Band THz Detector","authors":"Mengjuan Liu;Ziyang Ren;Haiming Zhu;Zhiyong Tan;Juncheng Cao;Weien Lai;He Zhu;Jiaqi Zhu;Ning Dai;Huizhen Wu","doi":"10.1109/TTHZ.2025.3593652","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3593652","url":null,"abstract":"Terahertz (THz) technology has been widely used in astronomical observation where blocked impurity band (BIB) terahertz detectors are key components for acquiring THz signals in space scenario. In this study, we proposed the integration of a plasmonic micronano structure onto Ge:Ga BIB detector and successfully realized the enhancement of the THz response performance. The BIB detector integrated with plasmonic structure shows a 64.5% improvement in blackbody responsivity under 4-K and 300-mV bias. The peak detectivity and noise equivalent power are also significantly improved, 7.0 × 10<sup>14</sup> Jones and 7.0 × 10<sup>−17</sup> W/Hz<sup>1/2</sup>, respectively. It is revealed that hot-electron effect arisen from the plasmonic excitation plays key role in the detector performance improvement. This work provides a new perspective for the development of high-sensitivity THz detectors.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 6","pages":"1075-1081"},"PeriodicalIF":3.9,"publicationDate":"2025-07-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145435682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study proposes a high-gain, broadband planar horn antenna that can be fabricated using standard printed circuit board technologies. The exponential tapering of the horn structure ensures wide bandwidth, while the semiopen structure and dielectric loading facilitate a smooth transition between the substrate-integrated waveguide and free space. A broadband transition between the substrate-integrated waveguide and the rectangular waveguide is also included for measurement purposes. The fabricated antenna exhibits an impedance bandwidth ranging from 220 to 303.3 GHz. With an end-fire radiation pattern, the antenna achieves a measured peak realized gain of 16.8 dBi, with a 3 dB beamwidth of 11$^circ$ in the H-plane and 17$^circ$ in the E-plane. This broadband, high-gain antenna is highly promising for operation within channel 68, as defined by the IEEE 802.15.3 d standard.
{"title":"A Semiopen Substrate Integrated Horn Antenna With Dielectric Loading in 300 GHz Band","authors":"Prabir Garu;Zhao-Hong Tu;Sheng-Chun Tsao;Chih-Han Lin;Yu-Hsiang Cheng","doi":"10.1109/TTHZ.2025.3593182","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3593182","url":null,"abstract":"This study proposes a high-gain, broadband planar horn antenna that can be fabricated using standard printed circuit board technologies. The exponential tapering of the horn structure ensures wide bandwidth, while the semiopen structure and dielectric loading facilitate a smooth transition between the substrate-integrated waveguide and free space. A broadband transition between the substrate-integrated waveguide and the rectangular waveguide is also included for measurement purposes. The fabricated antenna exhibits an impedance bandwidth ranging from 220 to 303.3 GHz. With an end-fire radiation pattern, the antenna achieves a measured peak realized gain of 16.8 dBi, with a 3 dB beamwidth of 11<inline-formula><tex-math>$^circ$</tex-math></inline-formula> in the H-plane and 17<inline-formula><tex-math>$^circ$</tex-math></inline-formula> in the E-plane. This broadband, high-gain antenna is highly promising for operation within channel 68, as defined by the IEEE 802.15.3 d standard.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"927-933"},"PeriodicalIF":3.9,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-07-28DOI: 10.1109/TTHZ.2025.3593179
Marie Nedvedova;Vojtech Kresalek;Zdenek Adamik;Norbert Pałka
This article describes the measurement, analysis, and modeling of the absorbable hemostats’ kinetic reaction using the terahertz (THz) attenuated total reflection spectroscopy. As the hemostats are of various origin, their mechanism of action, and consequently, their appropriate applications may differ. Two liquid media, physiological saline solution and the human blood, were used to initiate the observed dynamic reaction. The time-dependent changes in the measured THz response reflect the reaction kinetics of the materials. Based on the results, the reaction rate is compared among different materials.
{"title":"Exploring the Absorbable Hemostats’ Reaction Using ATR THz Time-Domain Spectroscopy","authors":"Marie Nedvedova;Vojtech Kresalek;Zdenek Adamik;Norbert Pałka","doi":"10.1109/TTHZ.2025.3593179","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3593179","url":null,"abstract":"This article describes the measurement, analysis, and modeling of the absorbable hemostats’ kinetic reaction using the terahertz (THz) attenuated total reflection spectroscopy. As the hemostats are of various origin, their mechanism of action, and consequently, their appropriate applications may differ. Two liquid media, physiological saline solution and the human blood, were used to initiate the observed dynamic reaction. The time-dependent changes in the measured THz response reflect the reaction kinetics of the materials. Based on the results, the reaction rate is compared among different materials.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 6","pages":"1048-1054"},"PeriodicalIF":3.9,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11098166","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145435679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this letter, a novel broadband transition from grounded coplanar waveguide to rectangular waveguide for large-width terahertz monolithic integrated circuit (TMIC) is proposed. This transition utilizes a dipole antenna with asymmetrical coupling probe to eliminate the additional parasitic effects caused by off-chip interconnect transition technology thereby achieving low-loss performance. In addition, periodic metal pins are utilized to address the resonances of large-width TMIC. Compared with traditional dipole transition, the proposed structure has enhanced the broadband coupling efficiency. Fabricated on 50-μm indium phosphide (InP) substrate, the back-to-back transition achieves a return loss of better than 12 dB with an average insertion loss of 4.72 dB across 272–400 GHz.
{"title":"A Compact and Broadband Waveguide-to-GCPW Transition for 260–400 GHz Large-Width TMIC","authors":"Guangru Liu;Huali Zhu;Bo Zhang;Yang Chen;Yong Zhang","doi":"10.1109/TTHZ.2025.3593186","DOIUrl":"https://doi.org/10.1109/TTHZ.2025.3593186","url":null,"abstract":"In this letter, a novel broadband transition from grounded coplanar waveguide to rectangular waveguide for large-width terahertz monolithic integrated circuit (TMIC) is proposed. This transition utilizes a dipole antenna with asymmetrical coupling probe to eliminate the additional parasitic effects caused by off-chip interconnect transition technology thereby achieving low-loss performance. In addition, periodic metal pins are utilized to address the resonances of large-width TMIC. Compared with traditional dipole transition, the proposed structure has enhanced the broadband coupling efficiency. Fabricated on 50-<italic>μ</i>m indium phosphide (InP) substrate, the back-to-back transition achieves a return loss of better than 12 dB with an average insertion loss of 4.72 dB across 272–400 GHz.","PeriodicalId":13258,"journal":{"name":"IEEE Transactions on Terahertz Science and Technology","volume":"15 5","pages":"940-943"},"PeriodicalIF":3.9,"publicationDate":"2025-07-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144998212","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：