Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecp5045
Gensai Tei, Long Liu, M. Watanabe
{"title":"Design and Analysis of Si/CaF2 Near-Infrared (λ∼1.7µm) DFB Quantum Cascade Laser for Silicon Photonics","authors":"Gensai Tei, Long Liu, M. Watanabe","doi":"10.1587/transele.2022ecp5045","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5045","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73722609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022omp0004
Tatsuya Kato, Y. Ichino, T. Mori, Yoshiyuki Seike
{"title":"Effects of Potassium Doping on the Active Layer of Inverse-Structured Perovskite Solar Cells","authors":"Tatsuya Kato, Y. Ichino, T. Mori, Yoshiyuki Seike","doi":"10.1587/transele.2022omp0004","DOIUrl":"https://doi.org/10.1587/transele.2022omp0004","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74574782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022omp0003
D. Taguchi, T. Manaka, M. Iwamoto
{"title":"Activating Dipolar-Energy-Based Triboelectric Power Generation Using Pyromellitic Dianhydride-4,4'-Oxydianiline Polyimide at Elevated Temperature","authors":"D. Taguchi, T. Manaka, M. Iwamoto","doi":"10.1587/transele.2022omp0003","DOIUrl":"https://doi.org/10.1587/transele.2022omp0003","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79187475","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Simulation Research on Low Frequency Magnetic Radiation Emission of Shipboard Equipment","authors":"Yang Xiao, Zhongyuan Zhou, Changping Tang, Jinjing Ren, Mingjie Sheng, Zheng Xu","doi":"10.1587/transele.2022ecp5001","DOIUrl":"https://doi.org/10.1587/transele.2022ecp5001","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89435574","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022sei0002
H. Kitano
SUMMARY Intrinsic Josephson junctions (IJJs) in the high-T c cuprate superconductors have several fascinating properties, which are superior to the usual Josephson junctions obtained from conventional superconductors with low T c , as follows; (1) a very thin thickness of the superconducting layers, (2) a strong interaction between junctions since neighboring junctions are closely connected in an atomic scale, (3) a clean interface between the superconducting and insulating layers, realized in a single crystal with few disorders. These unique properties of IJJs can enlarge the applicable areas of the superconducting qubits, not only the increase of qubit-operation temperature but the novel application of qubits including the macroscopic quantum states with internal degree of freedom. I present a comprehensive review of the phase dynamics in current-biased IJJs and argue the challenges of superconducting qubits utilizing IJJs.
{"title":"Possibilities and Challenges of Superconducting Qubits in the Intrinsic Josephson Junctions","authors":"H. Kitano","doi":"10.1587/transele.2022sei0002","DOIUrl":"https://doi.org/10.1587/transele.2022sei0002","url":null,"abstract":"SUMMARY Intrinsic Josephson junctions (IJJs) in the high-T c cuprate superconductors have several fascinating properties, which are superior to the usual Josephson junctions obtained from conventional superconductors with low T c , as follows; (1) a very thin thickness of the superconducting layers, (2) a strong interaction between junctions since neighboring junctions are closely connected in an atomic scale, (3) a clean interface between the superconducting and insulating layers, realized in a single crystal with few disorders. These unique properties of IJJs can enlarge the applicable areas of the superconducting qubits, not only the increase of qubit-operation temperature but the novel application of qubits including the macroscopic quantum states with internal degree of freedom. I present a comprehensive review of the phase dynamics in current-biased IJJs and argue the challenges of superconducting qubits utilizing IJJs.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75460614","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022sei0001
T. Kashiwagi, G. Kuwano, S. Nakagawa, M. Nakayama, Jeonghyuk Kim, Kanae Nagayama, T. Yuhara, T. Yamaguchi, Yuma Saito, Shohei Suzuki, Shotaro Yamada, Ryuta Kikuchi, M. Tsujimoto, H. Minami, K. Kadowaki
SUMMARY Our group has developed terahertz(THz)-waves emitting devices utilizing single crystals of high temperature superconductor Bi 2 Sr 2 CaCu 2 O 8 + δ (Bi2212). The working principle of the device is based on the AC Josephson e ff ect which is originated in the intrinsic Josephson junctions (IJJs) constructed in Bi2212 single crystals. In principle, based on the superconducting gap of the compound and the AC Josephson effect, the emission frequency range from 0.1 to 15 THz can be generated by simply adjusting bias voltages to the IJJs. In order to improve the device performances, we have performed continuous improvement to the device structures. In this paper, we present our recent approaches to high performance Bi2212 THz-waves emitters. Firstly, approaches to the reduction of self Joule heating of the devices is described. In virtue of improved device structures using Bi2212 crystal chips, the device characteristics, such as the radiation frequency and the output power, become better than previous structures. Secondly, developments of THz-waves emitting devices using IJJs-mesas coupled with external structures are explained. The re-sults clearly indicate that the external structures are very useful not only to obtain desired radiation frequencies higher than 1 THz but also to con-trol radiation frequency characteristics. Finally, approaches to further understanding of the spontaneous synchronization of IJJs is presented. The device characteristics obtained through the approaches would play important roles in future developments of THz-waves emitting devices by use of Bi2212 single crystals.
{"title":"Approaches to High Performance Terahertz-Waves Emitting Devices Utilizing Single Crystals of High Temperature Superconductor Bi2Sr2CaCu2O8+δ","authors":"T. Kashiwagi, G. Kuwano, S. Nakagawa, M. Nakayama, Jeonghyuk Kim, Kanae Nagayama, T. Yuhara, T. Yamaguchi, Yuma Saito, Shohei Suzuki, Shotaro Yamada, Ryuta Kikuchi, M. Tsujimoto, H. Minami, K. Kadowaki","doi":"10.1587/transele.2022sei0001","DOIUrl":"https://doi.org/10.1587/transele.2022sei0001","url":null,"abstract":"SUMMARY Our group has developed terahertz(THz)-waves emitting devices utilizing single crystals of high temperature superconductor Bi 2 Sr 2 CaCu 2 O 8 + δ (Bi2212). The working principle of the device is based on the AC Josephson e ff ect which is originated in the intrinsic Josephson junctions (IJJs) constructed in Bi2212 single crystals. In principle, based on the superconducting gap of the compound and the AC Josephson effect, the emission frequency range from 0.1 to 15 THz can be generated by simply adjusting bias voltages to the IJJs. In order to improve the device performances, we have performed continuous improvement to the device structures. In this paper, we present our recent approaches to high performance Bi2212 THz-waves emitters. Firstly, approaches to the reduction of self Joule heating of the devices is described. In virtue of improved device structures using Bi2212 crystal chips, the device characteristics, such as the radiation frequency and the output power, become better than previous structures. Secondly, developments of THz-waves emitting devices using IJJs-mesas coupled with external structures are explained. The re-sults clearly indicate that the external structures are very useful not only to obtain desired radiation frequencies higher than 1 THz but also to con-trol radiation frequency characteristics. Finally, approaches to further understanding of the spontaneous synchronization of IJJs is presented. The device characteristics obtained through the approaches would play important roles in future developments of THz-waves emitting devices by use of Bi2212 single crystals.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73294583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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