Pub Date : 2023-01-01DOI: 10.1587/transele.2022omp0005
Shohei Sakurai, Mayumi Iida, Kosei Okunuki, M. Kushida
{"title":"Effect of the State of Catalytic Nanoparticles on the Growth of Vertically Aligned Carbon Nanotubes","authors":"Shohei Sakurai, Mayumi Iida, Kosei Okunuki, M. Kushida","doi":"10.1587/transele.2022omp0005","DOIUrl":"https://doi.org/10.1587/transele.2022omp0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"26 1","pages":"208-213"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87575392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-01-01DOI: 10.1587/transele.2022ecs6008
Yoshihiro Yamauchi, S. Kidera
{"title":"Contrast Source Inversion for Objects Buried into Multi-Layered Media for Subsurface Imaging Applications","authors":"Yoshihiro Yamauchi, S. Kidera","doi":"10.1587/transele.2022ecs6008","DOIUrl":"https://doi.org/10.1587/transele.2022ecs6008","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"33 1","pages":"427-431"},"PeriodicalIF":0.0,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90777143","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021dii0005
C. Lin, Kai-ling Liang, W. Kuo, H. Shen, Chun-I Wu, Yen-Hsiang Fang
In this paper, we introduce our latest progress in the colloidal quantum dot enhanced color conversion layer for micro LEDs. Different methods of how to deploy colloidal quantum dots can be discussed and reviewed. The necessity of the using color conversion layer can be seen and color conversion efficiency of such layer can be calculated from the measured spectrum. A sub-pixel size of 5 micron of colloidal quantum dot pattern can be demonstrated in array format. key words: colloidal quantum dots, micro LEDs, mini LEDs, heterogeneous integration
{"title":"Colloidal Quantum Dot Enhanced Color Conversion Layer for Micro LEDs","authors":"C. Lin, Kai-ling Liang, W. Kuo, H. Shen, Chun-I Wu, Yen-Hsiang Fang","doi":"10.1587/transele.2021dii0005","DOIUrl":"https://doi.org/10.1587/transele.2021dii0005","url":null,"abstract":"In this paper, we introduce our latest progress in the colloidal quantum dot enhanced color conversion layer for micro LEDs. Different methods of how to deploy colloidal quantum dots can be discussed and reviewed. The necessity of the using color conversion layer can be seen and color conversion efficiency of such layer can be calculated from the measured spectrum. A sub-pixel size of 5 micron of colloidal quantum dot pattern can be demonstrated in array format. key words: colloidal quantum dots, micro LEDs, mini LEDs, heterogeneous integration","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"88 1","pages":"52-58"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79450459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021cdp0002
K. Yoshioka
{"title":"Time-Based Current Source: A Highly Digital Robust Current Generator for Switched Capacitor Circuits","authors":"K. Yoshioka","doi":"10.1587/transele.2021cdp0002","DOIUrl":"https://doi.org/10.1587/transele.2021cdp0002","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"65 1","pages":"324-333"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81276002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
SUMMARY Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code di- vision multiple access), (3) Power mode switching methods for improving e ffi ciency at low output power, (4) Power combining methods that have be- come important since LTE (long term evolution), and (5) Backo ff e ffi ciency improvement methods represented by ET (envelop tracking) and Doherty PA.
{"title":"Evolution of Power Amplifiers for Mobile Phone Terminals from the 2nd Generation to the 5th Generation","authors":"Satoshi Tanaka, Kenji Mukai, Shohei Imai, Hiroshi Okabe","doi":"10.1587/transele.2022mmi0008","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0008","url":null,"abstract":"SUMMARY Mobile phone systems continue to evolve from the 2nd generation, which began in the early 1990s, to the 5th generation, which is now in service. Along with this evolution, the power amplifier (PA) is also evolved. The characteristics required for PA are changing with each generation. In this paper, we will give an overview of the evolution of PAs from the 2nd generation mobile phones such as GSM (global system for mobile communications) to the 5th generation mobile phones that is often called NR (new radio), in particular, the circuit system. Specifically, the following five items will be described. (1) Ramp-up and ramp-down power control circuit corresponding to GSM, (2) Self-bias circuit technology for improving linearity that becomes important after W-CDMA (wideband code di- vision multiple access), (3) Power mode switching methods for improving e ffi ciency at low output power, (4) Power combining methods that have be- come important since LTE (long term evolution), and (5) Backo ff e ffi ciency improvement methods represented by ET (envelop tracking) and Doherty PA.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"9 1","pages":"421-432"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76814880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5048
Aoi Oyane, T. Senanayake, M. Masuda, J. Imaoka, Masayoshi Yamamoto
SUMMARY This paper proposes a topology of high power, MHz- frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from deliv- ering high power to high resistance loads such as 50 Ω , which is typically used in radio frequency (RF) systems. High resistance load causes hard- switching also and reduction of power e ffi ciency. The proposed topology overcomes these di ffi culties by utilizing a proposed ‘L-S network’. This network is e ff ective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high e ffi ciency is achieved in the power circuit in 471W experimental prototype.
{"title":"13.56MHz Half-Bridge GaN-HEMT Resonant Inverter Achieving High Power, Low Distortion, and High Efficiency by 'L-S Network'","authors":"Aoi Oyane, T. Senanayake, M. Masuda, J. Imaoka, Masayoshi Yamamoto","doi":"10.1587/transele.2021ecp5048","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5048","url":null,"abstract":"SUMMARY This paper proposes a topology of high power, MHz- frequency, half-bridge resonant inverter ideal for low-loss Gallium Nitride high electron mobility transistor (GaN-HEMT). General GaN-HEMTs have drawback of low drain-source breakdown voltage. This property has prevented conventional high-frequency series resonant inverters from deliv- ering high power to high resistance loads such as 50 Ω , which is typically used in radio frequency (RF) systems. High resistance load causes hard- switching also and reduction of power e ffi ciency. The proposed topology overcomes these di ffi culties by utilizing a proposed ‘L-S network’. This network is e ff ective combination of a simple impedance converter and a series resonator. The proposed topology provides not only high power for high resistance load but also arbitrary design of output wattage depending on impedance conversion design. In addition, the current through the series resonator is low in the L-S network. Hence, this series resonator can be designed specifically for harmonic suppression with relatively high quality-factor and zero reactance. Low-distortion sinusoidal 3kW output is verified in the proposed inverter at 13.56MHz by computer simulations. Further, 99.4% high e ffi ciency is achieved in the power circuit in 471W experimental prototype.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"2 1","pages":"407-418"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81873531","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021sep0002
F. China, N. Takeuchi, H. Suzuki, Y. Yamanashi, H. Terai, N. Yoshikawa
{"title":"A High-Speed Interface Based on a Josephson Latching Driver for Adiabatic Quantum-Flux-Parametron Logic","authors":"F. China, N. Takeuchi, H. Suzuki, Y. Yamanashi, H. Terai, N. Yoshikawa","doi":"10.1587/transele.2021sep0002","DOIUrl":"https://doi.org/10.1587/transele.2021sep0002","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"38 1","pages":"264-269"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88871334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021cti0001
K. Miyaji
SUMMARY There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The ad-vancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D- integration of Fe-based metal composite magnetic core inductor, and GaN FET
{"title":"Design and Integration of Beyond-10MHz High Switching Frequency DC-DC Converter","authors":"K. Miyaji","doi":"10.1587/transele.2021cti0001","DOIUrl":"https://doi.org/10.1587/transele.2021cti0001","url":null,"abstract":"SUMMARY There are continuous and strong demands for the DC-DC converter to reduce the size of passive components and increase the system power density. Advances in CMOS processes and GaN FETs enabled the switching frequency of DC-DC converters to be beyond 10MHz. The ad-vancements of 3-D integrated magnetics will further reduce the footprint. In this paper, the overview of beyond-10MHz DC-DC converters will be provided first, and our recent achievements are introduced focusing on 3D- integration of Fe-based metal composite magnetic core inductor, and GaN FET","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"47 1","pages":"521-533"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85270273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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