Pub Date : 2022-01-01DOI: 10.1587/transele.2021rep0002
Masahiro Tanaka
{"title":"Volume Integral Equations Combined with Orthogonality of Modes for Analysis of Two-Dimensional Optical Slab Waveguide","authors":"Masahiro Tanaka","doi":"10.1587/transele.2021rep0002","DOIUrl":"https://doi.org/10.1587/transele.2021rep0002","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"21 1","pages":"137-145"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84240533","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5024
J. Kamioka, Yoshifumi Kawamura, Ryota Komaru, M. Hangai, Y. Kamo, Tetsuo Kodera, S. Shinjo
SUMMARY This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-e ff ective 20W transmit-receive (T / R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power ampli-fier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T / R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4–7.4W, an associate gain of 22.3–24.6dB and a power added e ffi ciency (PAE) of 32–36% over 9.0– 11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20–28W, associate gain of 7.8–10.7dB, and a PAE of 40– 56% over 9.0–11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15–30W, associate gain of 27–30dB, and PAE of 26–33% over 9.0–11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1–1.3dB and isolation of 10.1– 14.7dB over 8.0–11.5GHz. By employing cost-e ff ective circuit configu-rations, the costs of these chipsets are estimated to be about half that of conventional chipsets
{"title":"X-Band GaN Chipsets for Cost-Effective 20W T/R Modules","authors":"J. Kamioka, Yoshifumi Kawamura, Ryota Komaru, M. Hangai, Y. Kamo, Tetsuo Kodera, S. Shinjo","doi":"10.1587/transele.2021ecp5024","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5024","url":null,"abstract":"SUMMARY This paper reports on X-band Gallium Nitride (GaN) chipsets for cost-e ff ective 20W transmit-receive (T / R) modules. The chipset components include a GaN-on-Si monolithic microwave integrated circuit (MMIC) driver amplifier (DA), a GaN-on-SiC high power ampli-fier (HPA) with GaAs matching circuits, a high-gain GaN-on-Si HPA with a GaAs output matching circuit, and a GaN-on-Si MMIC switch (SW). By utilizing either combination of the DA or single high-gain HPA, the configurations of two T / R module types can be realized. The GaN-on-Si MMIC DA demonstrates an output power of 6.4–7.4W, an associate gain of 22.3–24.6dB and a power added e ffi ciency (PAE) of 32–36% over 9.0– 11.0GHz. A GaN-on-SiC HPA with GaAs matching circuits exhibited an output power of 20–28W, associate gain of 7.8–10.7dB, and a PAE of 40– 56% over 9.0–11.0GHz. The high-gain GaN-on-Si HPA with a GaAs output matching circuit exhibits an output power of 15–30W, associate gain of 27–30dB, and PAE of 26–33% over 9.0–11.0GHz. The GaN-on-Si MMIC switch demonstrates insertion losses of 1.1–1.3dB and isolation of 10.1– 14.7dB over 8.0–11.5GHz. By employing cost-e ff ective circuit configu-rations, the costs of these chipsets are estimated to be about half that of conventional chipsets","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"44 1","pages":"194-202"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85978954","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2022mmi0006
K. Nakatani, Y. Yamaguchi, Takuma Torii, M. Tsuru
SUMMARY GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping e ff ects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.
{"title":"A Review of GaN MMIC Power Amplifier Technologies for Millimeter-Wave Applications","authors":"K. Nakatani, Y. Yamaguchi, Takuma Torii, M. Tsuru","doi":"10.1587/transele.2022mmi0006","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0006","url":null,"abstract":"SUMMARY GaN microwave monolithic integrated circuit (MMIC) power amplifiers (PAs) technologies for millimeter-wave (mm-wave) applications are reviewed in this paper. In the mm-wave band, GaN PAs have achieved high-output power as much as traveling wave tube amplifiers used in satellite communications. Additionally, GaN PAs have been integrated enough to be used for 5G and Beyond-5G. In this paper, a high accuracy large-signal GaN-HEMT modeling technique including the trapping e ff ects is introduced in mm-waves. The prototyped PAs designed with the novel modeling technique have achieved RF performance comparable to that of the state-of-the-art GaN PAs in mm-wave.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"26 1","pages":"433-440"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84142015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5012
Tomoki Kaneko, H. Saito, A. Hirose
{"title":"SRAM: A Septum-Type Polarizer Design Method Based on Superposed Even- and Odd-Mode Excitation Analysis","authors":"Tomoki Kaneko, H. Saito, A. Hirose","doi":"10.1587/transele.2021ecp5012","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5012","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"52 1","pages":"9-17"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79106538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021ecp5031
Duc Minh Nguyen, H. Shirai
{"title":"A Discussion on Physical Optics Approximation for Edge Diffraction by A Conducting Wedge","authors":"Duc Minh Nguyen, H. Shirai","doi":"10.1587/transele.2021ecp5031","DOIUrl":"https://doi.org/10.1587/transele.2021ecp5031","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"94 1","pages":"176-183"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81426404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021dii0002
Naoya Mukojima, Masaki Yasugi, Y. Mizutani, T. Yasui, Hirotsugu Yamamoto
SUMMARY We have utilized single-pixel imaging and deep-learning to solve the privacy-preserving problem in gesture recognition for interactive display. Silhouette images of hand gestures were acquired by use of a display panel as an illumination. Reconstructions of gesture images have been performed by numerical experiments on single-pixel imaging by changing the number of illumination mask patterns. For the training and the image restoration with deep learning, we prepared reconstructed data with 250 and 500 illuminations as datasets. For each of the 250 and 500 illuminations, we prepared 9000 datasets in which original images and reconstructed data were paired. Of these data, 8500 data were used for training a neural network (6800 data for training and 1700 data for validation), and 500 data were used to evaluate the accuracy of image restoration. Our neural network, based on U-net, was able to restore images close to the original images even from reconstructed data with greatly reduced number of illuminations, which is 1/40 of the single-pixel imaging without deep learning. Compared restoration accuracy between cases using shadowgraph (black on white background) and negative-positive reversed images (white on black background) as silhouette image, the accuracy of the restored image was lower for negative-positive-reversed images when the number of illuminations was small. Moreover, we found that the restoration accuracy decreased in the order of rock, scissor, and paper. Shadowgraph is suitable for gesture silhouette, and it is necessary to prepare training data and construct neural networks, to avoid the restoration accuracy between gestures when further reducing the number of illuminations.
{"title":"Deep-Learning-Assisted Single-Pixel Imaging for Gesture Recognition in Consideration of Privacy","authors":"Naoya Mukojima, Masaki Yasugi, Y. Mizutani, T. Yasui, Hirotsugu Yamamoto","doi":"10.1587/transele.2021dii0002","DOIUrl":"https://doi.org/10.1587/transele.2021dii0002","url":null,"abstract":"SUMMARY We have utilized single-pixel imaging and deep-learning to solve the privacy-preserving problem in gesture recognition for interactive display. Silhouette images of hand gestures were acquired by use of a display panel as an illumination. Reconstructions of gesture images have been performed by numerical experiments on single-pixel imaging by changing the number of illumination mask patterns. For the training and the image restoration with deep learning, we prepared reconstructed data with 250 and 500 illuminations as datasets. For each of the 250 and 500 illuminations, we prepared 9000 datasets in which original images and reconstructed data were paired. Of these data, 8500 data were used for training a neural network (6800 data for training and 1700 data for validation), and 500 data were used to evaluate the accuracy of image restoration. Our neural network, based on U-net, was able to restore images close to the original images even from reconstructed data with greatly reduced number of illuminations, which is 1/40 of the single-pixel imaging without deep learning. Compared restoration accuracy between cases using shadowgraph (black on white background) and negative-positive reversed images (white on black background) as silhouette image, the accuracy of the restored image was lower for negative-positive-reversed images when the number of illuminations was small. Moreover, we found that the restoration accuracy decreased in the order of rock, scissor, and paper. Shadowgraph is suitable for gesture silhouette, and it is necessary to prepare training data and construct neural networks, to avoid the restoration accuracy between gestures when further reducing the number of illuminations.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"735 1","pages":"79-85"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78763694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2022mmi0003
H. Yamamoto, K. Kikuchi, V. Vadalà, G. Bosi, A. Raffo, G. Vannini
SUMMARY This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F -1 ) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.
{"title":"Analysis of Efficiency-Limiting Factors Resulting from Transistor Current Source on Class-F and Inverse Class-F Power Amplifiers","authors":"H. Yamamoto, K. Kikuchi, V. Vadalà, G. Bosi, A. Raffo, G. Vannini","doi":"10.1587/transele.2022mmi0003","DOIUrl":"https://doi.org/10.1587/transele.2022mmi0003","url":null,"abstract":"SUMMARY This paper describes the efficiency-limiting factors resulting from transistor current source in the case of class-F and inverse class-F (F -1 ) operations under saturated region. We investigated the influence of knee voltage and gate-voltage clipping behaviors on drain efficiency as limiting factors for the current source. Numerical analysis using a simplified transistor model was carried out. As a result, we have demonstrated that the limiting factor for class-F -1 operation is the gate-diode conduction rather than knee voltage. On the other hand, class-F PA is restricted by the knee voltage effects. Furthermore, nonlinear measurements carried out on a GaN HEMT validate our analytical results.","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"28 1","pages":"449-456"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91250125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021fus0005
X. Bai, R. Nebashi, M. Miyamura, Kazunori Funahashi, N. Banno, K. Okamoto, Hideaki Numata, N. Iguchi, T. Sugibayashi, T. Sakamoto, M. Tada
{"title":"28nm Atom-Switch FPGA: Static Timing Analysis and Evaluation","authors":"X. Bai, R. Nebashi, M. Miyamura, Kazunori Funahashi, N. Banno, K. Okamoto, Hideaki Numata, N. Iguchi, T. Sugibayashi, T. Sakamoto, M. Tada","doi":"10.1587/transele.2021fus0005","DOIUrl":"https://doi.org/10.1587/transele.2021fus0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"36 1","pages":"627-630"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81947829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-01DOI: 10.1587/transele.2021fup0005
E. Hong, K. Park, S. Ohmi
{"title":"Sputtering Gas Pressure Dependence on the LaBxNy Insulator Formation for Pentacene-Based Back-Gate Type Floating-Gate Memory with an Amorphous Rubrene Passivation Layer","authors":"E. Hong, K. Park, S. Ohmi","doi":"10.1587/transele.2021fup0005","DOIUrl":"https://doi.org/10.1587/transele.2021fup0005","url":null,"abstract":"","PeriodicalId":13259,"journal":{"name":"IEICE Trans. Electron.","volume":"1 1","pages":"589-595"},"PeriodicalIF":0.0,"publicationDate":"2022-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86400580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：