Pub Date : 2019-04-30DOI: 10.26438/ijsrpas/v7i2.6670
S. A. Khan, A. K.Saxena, C. M. Tiwari
{"title":"Correlative Analysis of Long Term Cosmic Ray Variation in Relation with Interplanetary Magnetic Field","authors":"S. A. Khan, A. K.Saxena, C. M. Tiwari","doi":"10.26438/ijsrpas/v7i2.6670","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i2.6670","url":null,"abstract":"","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"56 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80891334","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-04-30DOI: 10.26438/ijsrpas/v7i2.2426
A. Verma, A. Diwakar, R. Patel
— High-performance solar-cell is designed for lead-free perovskite materials, synthesis of using for the organometallic halides. The perovskite materials having a high-efficiency charge carrier and identified low-cost materials based commercial photo-voltaic cell. It is an unusually breakthrough of the drawback of high-efficiency photo-voltaic solar-cell because in this solar-cell replaced harmful lead using various perovskite materials like (Sn2+, Ge2+, Mg2+, Ca2+, Sr2+, Ba2+, Cu2+, Fe2+, Pd2+, and Eu2+). We predict the structure and optical properties of perovskite solar-cell based on Ge and Sn solid solutions, CH 3 NH 3 Sn (1−x) Ge x I 3 (0 ≤ x ≤ 1). This material is having the band gaps from 1.3 to 2.0 eV, and it is suitable for an optoelectronic application's range, from single junction devices and top cells for placement to light-emitting layer. The power efficiency of lead-free perovskite solar-cell (LFPSCs) is more than 27%. Which has ABO 3 type orthorhombic crystal structure and successfully examine its structure using X-ray diffraction (XRD) technology. In this research, we synthesis successfully lead-free perovskite solar-cell (LFPSCs)
{"title":"Synthesis and Characterization of High-Performance Solar Cell","authors":"A. Verma, A. Diwakar, R. Patel","doi":"10.26438/ijsrpas/v7i2.2426","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i2.2426","url":null,"abstract":"— High-performance solar-cell is designed for lead-free perovskite materials, synthesis of using for the organometallic halides. The perovskite materials having a high-efficiency charge carrier and identified low-cost materials based commercial photo-voltaic cell. It is an unusually breakthrough of the drawback of high-efficiency photo-voltaic solar-cell because in this solar-cell replaced harmful lead using various perovskite materials like (Sn2+, Ge2+, Mg2+, Ca2+, Sr2+, Ba2+, Cu2+, Fe2+, Pd2+, and Eu2+). We predict the structure and optical properties of perovskite solar-cell based on Ge and Sn solid solutions, CH 3 NH 3 Sn (1−x) Ge x I 3 (0 ≤ x ≤ 1). This material is having the band gaps from 1.3 to 2.0 eV, and it is suitable for an optoelectronic application's range, from single junction devices and top cells for placement to light-emitting layer. The power efficiency of lead-free perovskite solar-cell (LFPSCs) is more than 27%. Which has ABO 3 type orthorhombic crystal structure and successfully examine its structure using X-ray diffraction (XRD) technology. In this research, we synthesis successfully lead-free perovskite solar-cell (LFPSCs)","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-04-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82178366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.1834
S. Kumar, R. Amalanathan
Received: 22/Jan/2019, Accepted: 14/Feb/2019, Online: 28/Feb/2019 AbstractThe dielectric relaxation studies of Triethanolamine with 2-Alkoxyethanols binary liquid mixtures have been determined over the frequency range of 10 MHz to 20 GHz at different concentrations using Time Domain Reflectometer (TDR) Technique at 303.15K. The dielectric permittivity (ε') and dielectric loss (ε") has been plotted in the dielectric complex plane. The static dielectric constant (ε0), dielectric constant at high frequency (ε∞), and relaxation time (τ) values are calculated. Using these parameters, the values of Bruggeman factor (fB), excess dielectric constant (ε E ) and excess inverse relaxation time (1/τ) E were also calculated. The effective Kirkwood correlation factor (g eff ) and corrective Kirkwood correlation factor (gf) have also been determined and discussed to yield information on the structure and dynamics of the mixtures. The long range and short range interaction between the dipoles can be studied from the thermodynamic parameter, excess Helmholtz free energy (∆F E ). The free energy of activation for relaxation time (∆Fτ) were also calculated and interpreted on the basis of nature of molecular interaction.
{"title":"Dielectric Relaxation Studies of Triethanolamine with 2-Alkoxyethanol using time Domain Reflectometry Technique","authors":"S. Kumar, R. Amalanathan","doi":"10.26438/ijsrpas/v7i1.1834","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.1834","url":null,"abstract":"Received: 22/Jan/2019, Accepted: 14/Feb/2019, Online: 28/Feb/2019 AbstractThe dielectric relaxation studies of Triethanolamine with 2-Alkoxyethanols binary liquid mixtures have been determined over the frequency range of 10 MHz to 20 GHz at different concentrations using Time Domain Reflectometer (TDR) Technique at 303.15K. The dielectric permittivity (ε') and dielectric loss (ε\") has been plotted in the dielectric complex plane. The static dielectric constant (ε0), dielectric constant at high frequency (ε∞), and relaxation time (τ) values are calculated. Using these parameters, the values of Bruggeman factor (fB), excess dielectric constant (ε E ) and excess inverse relaxation time (1/τ) E were also calculated. The effective Kirkwood correlation factor (g eff ) and corrective Kirkwood correlation factor (gf) have also been determined and discussed to yield information on the structure and dynamics of the mixtures. The long range and short range interaction between the dipoles can be studied from the thermodynamic parameter, excess Helmholtz free energy (∆F E ). The free energy of activation for relaxation time (∆Fτ) were also calculated and interpreted on the basis of nature of molecular interaction.","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"125 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79016248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.1017
M. Amritkar, A. Patil, S. Barve, S. Gosavi
Advection dominant fluid flows and transport processes in microfluidic mixing devices pose noteworthy challenges in design related simulations as regards numerical errors. In the present work, an unsteady flow model with decay constant was utilized for testing passive micro-mixer simulations for numerical error. The simulations were performed using OpenFOAM (Open-source Field Operation And Manipulation), a finite volume based open source software. Three types of hydrodynamic boundary conditions representing surface engineered device walls (hydro-active patches) were investigated as design test cases. Our study focuses upon simulated effect of these conditions on concentration profiles from the point of view of numerical error. We show that the model can be analytically treated in part to establish a particular feature in the simulated concentration profiles is a numerical artefact. Further, it is shown that this error is rectified either by changing the method of solving discretized equation or by coarsening the mesh. This process is also sensitive to the type of hydrodynamic boundary conditions imposed. A generalized grid convergence test we carried out attests to the reliability of these micro-fluidics simulation results, despite the fact that they display numerical artefacts. The paper addresses this anomaly to a strong interplay between difference equation solving methods, mesh parameters and boundary conditions in the partial differential equation (PDE) model for micro-flows in passive micro-mixers. Our investigation thus suggests that grid independence tests, instead of being based only upon cell variables and mesh parameters, should also be informed by PDE boundary conditions and difference equation solving methods. Keywords— Micro-fluidics , micro-mixer, PDE, CFD, OpenFOAM
{"title":"Numerical issues in design of passive micro-mixers and its performance analysis using CFD","authors":"M. Amritkar, A. Patil, S. Barve, S. Gosavi","doi":"10.26438/ijsrpas/v7i1.1017","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.1017","url":null,"abstract":"Advection dominant fluid flows and transport processes in microfluidic mixing devices pose noteworthy challenges in design related simulations as regards numerical errors. In the present work, an unsteady flow model with decay constant was utilized for testing passive micro-mixer simulations for numerical error. The simulations were performed using OpenFOAM (Open-source Field Operation And Manipulation), a finite volume based open source software. Three types of hydrodynamic boundary conditions representing surface engineered device walls (hydro-active patches) were investigated as design test cases. Our study focuses upon simulated effect of these conditions on concentration profiles from the point of view of numerical error. We show that the model can be analytically treated in part to establish a particular feature in the simulated concentration profiles is a numerical artefact. Further, it is shown that this error is rectified either by changing the method of solving discretized equation or by coarsening the mesh. This process is also sensitive to the type of hydrodynamic boundary conditions imposed. A generalized grid convergence test we carried out attests to the reliability of these micro-fluidics simulation results, despite the fact that they display numerical artefacts. The paper addresses this anomaly to a strong interplay between difference equation solving methods, mesh parameters and boundary conditions in the partial differential equation (PDE) model for micro-flows in passive micro-mixers. Our investigation thus suggests that grid independence tests, instead of being based only upon cell variables and mesh parameters, should also be informed by PDE boundary conditions and difference equation solving methods. Keywords— Micro-fluidics , micro-mixer, PDE, CFD, OpenFOAM","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"19 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84902719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.4651
.. C.Karnan, .. A.R.Prabakaran
{"title":"Investigation on new NLO material L-histidine potassium pentaborate (LHKB5)","authors":".. C.Karnan, .. A.R.Prabakaran","doi":"10.26438/ijsrpas/v7i1.4651","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.4651","url":null,"abstract":"","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"73 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85983241","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.4245
M. Sonawane, R. Patil
All Nickel Sulphide thin films were deposited onto the stainless steel substrate by modified chemical bath deposition method. The structural, surface morphology were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) respectively. The electrochemical capacitor performances were examined by using cyclic voltammetry and galvanostatic charge-discharge method. The NiS electrode exhibits a good cycling performance. The specific capacitance of 353 Fgm -1 has been obtained in 2 M KOH solution at a scan rate 50 mVs -1 within the potential range 0 to 0.8 V Vs Ag/AgCl. In charge-discharge behaviors, the maximum energy density (E) of 11.7 Whkg -1 and power density (P) of 4.3 kWkg -1 was obtained at a current density 1 mA/cm 2 . Impedance spectroscopic analysis revealed that the ESR is 5 Ω in KOH electrolyte. Keywords— Nickel Sulphide (NiS), Thin films, Cyclic voltammetry, Supercapacitor, Charge-discharge
采用改进的化学浴沉积法将所有的硫化镍薄膜沉积在不锈钢基体上。采用x射线衍射仪(XRD)和扫描电镜(SEM)对其结构和表面形貌进行了表征。采用循环伏安法和恒流充放电法对电化学电容器的性能进行了检测。NiS电极具有良好的循环性能。在2 M KOH溶液中，在0 ~ 0.8 V Vs Ag/AgCl电位范围内，扫描速率为50 mv -1，获得了353 Fgm -1的比电容。在充放电行为中，在电流密度为1 mA/ cm2时，获得了最大能量密度(E)为11.7 Whkg -1，功率密度(P)为4.3 kWkg -1。阻抗谱分析表明，KOH电解质的ESR为5 Ω。关键词:硫化镍，薄膜，循环伏安法，超级电容器，充放电
{"title":"Chemical Synthesis and Characterization of Nickel Sulphide Thin Film Electrode for Supercapacitor Performances","authors":"M. Sonawane, R. Patil","doi":"10.26438/ijsrpas/v7i1.4245","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.4245","url":null,"abstract":"All Nickel Sulphide thin films were deposited onto the stainless steel substrate by modified chemical bath deposition method. The structural, surface morphology were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) respectively. The electrochemical capacitor performances were examined by using cyclic voltammetry and galvanostatic charge-discharge method. The NiS electrode exhibits a good cycling performance. The specific capacitance of 353 Fgm -1 has been obtained in 2 M KOH solution at a scan rate 50 mVs -1 within the potential range 0 to 0.8 V Vs Ag/AgCl. In charge-discharge behaviors, the maximum energy density (E) of 11.7 Whkg -1 and power density (P) of 4.3 kWkg -1 was obtained at a current density 1 mA/cm 2 . Impedance spectroscopic analysis revealed that the ESR is 5 Ω in KOH electrolyte. Keywords— Nickel Sulphide (NiS), Thin films, Cyclic voltammetry, Supercapacitor, Charge-discharge","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"23 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81241092","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.6064
N. Tayade, M. Tirpude, P. Arjunwadkar
{"title":"Slabs of Crystallographic Planes of Rutile TiO2 as a Photocatalytic Surface","authors":"N. Tayade, M. Tirpude, P. Arjunwadkar","doi":"10.26438/ijsrpas/v7i1.6064","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.6064","url":null,"abstract":"","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"9 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82584586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.6575
J. Bhavani, Rita John
Received: 06/Feb/2019, Accepted: 18/Feb/2019, Online: 28/Feb/2019 Abstract— The structural and electronic properties of Cu2ZnGeX4 (X = S, Se and Te) with a tetrahedral coordinated stannite structure have been investigated using first-principles calculations. The optimized lattice constants, anion displacement u, tetragonal distortion parameter η, band gap, density of states and bulk modulus values are reported. The modified BeckeJohnson exchange potential (TB-mBJ), is used to calculate the electronic properties of Cu based quaternary semiconductors Cu2ZnGeX4 (X = S, Se and Te) and thus the results for the band gap and other electronic properties such as Total Density of States (TDOS) and Partial Density of States (PDOS) are analyzed in detail. Also the results obtained using TB-mBJ potential are compared with the standard local density and generalized gradient approximation (GGA). Even though the comparison of results shows that the results obtained by TB-mBJ are still underestimating the experimental results. This explains the inadequacy of mBJ potential for semiconductors with strongly delocalized d electrons. Thus in this paper an on-site Coulomb U is incorporated within mBJ potential (mBJ + U) which leads to a better description of the pd hybridization and therefore the band gap which is very much comparable with the experimental results.
{"title":"Band Gap Engineering of Cu2-II-IV-VI4 Quaternary Semiconductors Using PBE-GGA, TB-mBJ and mBJ+U Potentials","authors":"J. Bhavani, Rita John","doi":"10.26438/ijsrpas/v7i1.6575","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.6575","url":null,"abstract":"Received: 06/Feb/2019, Accepted: 18/Feb/2019, Online: 28/Feb/2019 Abstract— The structural and electronic properties of Cu2ZnGeX4 (X = S, Se and Te) with a tetrahedral coordinated stannite structure have been investigated using first-principles calculations. The optimized lattice constants, anion displacement u, tetragonal distortion parameter η, band gap, density of states and bulk modulus values are reported. The modified BeckeJohnson exchange potential (TB-mBJ), is used to calculate the electronic properties of Cu based quaternary semiconductors Cu2ZnGeX4 (X = S, Se and Te) and thus the results for the band gap and other electronic properties such as Total Density of States (TDOS) and Partial Density of States (PDOS) are analyzed in detail. Also the results obtained using TB-mBJ potential are compared with the standard local density and generalized gradient approximation (GGA). Even though the comparison of results shows that the results obtained by TB-mBJ are still underestimating the experimental results. This explains the inadequacy of mBJ potential for semiconductors with strongly delocalized d electrons. Thus in this paper an on-site Coulomb U is incorporated within mBJ potential (mBJ + U) which leads to a better description of the pd hybridization and therefore the band gap which is very much comparable with the experimental results.","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"41 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90880616","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.5255
W. Immanuel, S. Deborrah, S. Inbanathan
{"title":"Optical Characteristic Investigation on Copper Sulphide thin film for photovoltaic Applications","authors":"W. Immanuel, S. Deborrah, S. Inbanathan","doi":"10.26438/ijsrpas/v7i1.5255","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.5255","url":null,"abstract":"","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"59 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74214788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-02-28DOI: 10.26438/ijsrpas/v7i1.9295
Poornima Rawat, S. Pawar, Tryambak A. Hiwarkar
{"title":"Nonlinear Fiber Bragg Grating Based Optical Switching and Transistor Characteristics","authors":"Poornima Rawat, S. Pawar, Tryambak A. Hiwarkar","doi":"10.26438/ijsrpas/v7i1.9295","DOIUrl":"https://doi.org/10.26438/ijsrpas/v7i1.9295","url":null,"abstract":"","PeriodicalId":14348,"journal":{"name":"International Journal of Scientific Research in Physics and Applied Sciences","volume":"11 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2019-02-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90651608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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