In this study, it was aimed to examine the adsorption and corrosion behaviours of the aqueous extract of Mammillaria prolifera, a cactus fruit, in 1.0 M HCl solution using experimental methods such as potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). Mammillaria prolifera is a cactus species from the Cactaceae family, commonly known as Texas nipple cactus. Experiments were realized for aqueous extracts of four different Mammillaria prolifera fruits. The results indicate that the aqueous extract solution of cactus fruit has outstanding anti-corrosive performance of over 90% at the optimum concentration of 0.120% (w/v). In addition to electrochemical experiments, FE-SEM surface images were taken as another indicator of high inhibition. The results showed that the mild steel surface immersed in the inhibited electrolyte solution at 298 K after one-hour exposure did not contain cracks, pits or deformations compared to the inhibitor-free surface. As a result, experimental measurements and FE-SEMsurface images support each other.
{"title":"INSIGHT INTO ANTI-CORROSION EFFECT OF MAMILLARIA PROLIFERA FRUIT EXTRACT AS A GREEN INHBITOR FOR MILD STEEL IN HCl SOLUTION","authors":"D. Özkır","doi":"10.55696/ejset.1387199","DOIUrl":"https://doi.org/10.55696/ejset.1387199","url":null,"abstract":"In this study, it was aimed to examine the adsorption and corrosion behaviours of the aqueous extract of Mammillaria prolifera, a cactus fruit, in 1.0 M HCl solution using experimental methods such as potentiodynamic polarization and electrochemical impedance spectroscopy (EIS). Mammillaria prolifera is a cactus species from the Cactaceae family, commonly known as Texas nipple cactus. Experiments were realized for aqueous extracts of four different Mammillaria prolifera fruits. The results indicate that the aqueous extract solution of cactus fruit has outstanding anti-corrosive performance of over 90% at the optimum concentration of 0.120% (w/v). In addition to electrochemical experiments, FE-SEM surface images were taken as another indicator of high inhibition. The results showed that the mild steel surface immersed in the inhibited electrolyte solution at 298 K after one-hour exposure did not contain cracks, pits or deformations compared to the inhibitor-free surface. As a result, experimental measurements and FE-SEMsurface images support each other.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"18 11","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"138984570","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, the calibration process of the EXOGAM2 conventional gamma detector system with the newly developed digital electronic device, namely NUMEXO2, will be presented. This experimental study was performed at the GANIL (Grand Accélérateur National d'Ions Lourds) nuclear research center in France. The energy calibration of the EXOGAM2 detector system with the newly developed NUMEXO2 digital electronic device was conducted using both low and high gamma energy levels of a 152Eu radioactive source. This calibration was carried out for two EXOGAM2 detectors, and the energy resolution of each crystal in the EXOGAM2 system was determined. The energy resolution of each crystal was found to be similar to the previously measured energy resolution values of the EXOGAM2 detectors. Therefore, the use of the digital electronic device NUMEXO2 did not affect the energy resolution of the detectors, but it did enable us to acquire data at a high counting rate.
{"title":"THE EXOGAM2 CALIBRATION USING THE NEWLY DEVELOPED NUMEXO2 DIGITAL ELECTRONIC","authors":"Elif Şahi̇n, Sefa Ertürk, Vakkas Bozkurt","doi":"10.55696/ejset.1312972","DOIUrl":"https://doi.org/10.55696/ejset.1312972","url":null,"abstract":"In this study, the calibration process of the EXOGAM2 conventional gamma detector system with the newly developed digital electronic device, namely NUMEXO2, will be presented. This experimental study was performed at the GANIL (Grand Accélérateur National d'Ions Lourds) nuclear research center in France. The energy calibration of the EXOGAM2 detector system with the newly developed NUMEXO2 digital electronic device was conducted using both low and high gamma energy levels of a 152Eu radioactive source. This calibration was carried out for two EXOGAM2 detectors, and the energy resolution of each crystal in the EXOGAM2 system was determined. The energy resolution of each crystal was found to be similar to the previously measured energy resolution values of the EXOGAM2 detectors. Therefore, the use of the digital electronic device NUMEXO2 did not affect the energy resolution of the detectors, but it did enable us to acquire data at a high counting rate.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139255181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ohm’s Law has long been a cornerstone of electrical engineering, providing a linear relationship between voltage, current, and resistance that has underpinned modern circuit analysis. However, as technology advances and philosophical inquiries deepen, the limitations of this venerable law have become evident, particularly in scenarios involving near-zero resistance. This paper introduces a novel formulation-the modified Ohm’s Law; that not only rectifies the pitfalls of the conventional law but also harmonizes physics with philosophical principles. Motivated by the paradoxical projection of infinite current at zero resistance and the philosophical implications of deriving infinity from the finite, the modified equation emerges as a bridge between empirical insights and logical coherence. Through a rigorous mathematical derivation, theoretical examination, and computational analysis, we demonstrate the accuracy and applicability of the modified Ohm’s Law across diverse scenarios, ranging from semiconductor devices to high-current applications. In reconciling scientific rigor with philosophical consistency, this paper advances our understanding of electrical circuitry and beckons a new era of precision in analysis. Further, the modified Ohm’s Law paves the way for deeper explorations that resonate through the realms of physics and philosophy, reshaping the landscape of our understanding.
{"title":"THE MODIFIED OHM’S LAW AND ITS IMPLICATIONS FOR ELECTRICAL CIRCUIT ANALYSIS","authors":"Alex Kimuya","doi":"10.55696/ejset.1373552","DOIUrl":"https://doi.org/10.55696/ejset.1373552","url":null,"abstract":"Ohm’s Law has long been a cornerstone of electrical engineering, providing a linear relationship between voltage, current, and resistance that has underpinned modern circuit analysis. However, as technology advances and philosophical inquiries deepen, the limitations of this venerable law have become evident, particularly in scenarios involving near-zero resistance. This paper introduces a novel formulation-the modified Ohm’s Law; that not only rectifies the pitfalls of the conventional law but also harmonizes physics with philosophical principles. Motivated by the paradoxical projection of infinite current at zero resistance and the philosophical implications of deriving infinity from the finite, the modified equation emerges as a bridge between empirical insights and logical coherence. Through a rigorous mathematical derivation, theoretical examination, and computational analysis, we demonstrate the accuracy and applicability of the modified Ohm’s Law across diverse scenarios, ranging from semiconductor devices to high-current applications. In reconciling scientific rigor with philosophical consistency, this paper advances our understanding of electrical circuitry and beckons a new era of precision in analysis. Further, the modified Ohm’s Law paves the way for deeper explorations that resonate through the realms of physics and philosophy, reshaping the landscape of our understanding.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"54 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-11-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139281680","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The spider species Mastigusa arietina (Thorell, 1871) together with its genus Mastigusa Menge, 1854, was found in northwest of Anatolia and represent new record for Turkish spider fauna. Digital photographs of genitalia and habitus and its locality knowledges are presented.
{"title":"A Newly Recorded Genus for Turkish Spider Fauna (Araneae: Hahniidae)","authors":"O. Seyyar, Tuncay Türkeş, H. Demi̇r","doi":"10.55696/ejset.1332180","DOIUrl":"https://doi.org/10.55696/ejset.1332180","url":null,"abstract":"The spider species Mastigusa arietina (Thorell, 1871) together with its genus Mastigusa Menge, 1854, was found in northwest of Anatolia and represent new record for Turkish spider fauna. Digital photographs of genitalia and habitus and its locality knowledges are presented.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"52 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139341797","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This research focuses on using SCAPS-1D software to design and simulate efficient flexible perovskite solar cells. The study aims to optimize design parameters, gain a deeper understanding of the underlying physics, and obtain valuable insights into electrical characteristics. The device architecture includes key components like PET/ITO substrate, TiO2 ETL, CH3NH3SnI3 absorber, CuSCN HTL, and Au electrode. By optimizing the absorber thickness (600 nm) and temperature (300 K), performance and efficiency of the cell were improved. Investigation of different doping concentrations at 300 K for a fixed thickness revealed an efficiency of 26.98% at 600 nm. The highest efficiency of 31.44% was achieved with a doping concentration of 1E+21. This research showcases the potential of flexible perovskite solar cells for lightweight and versatile applications, emphasizing their significance in the field.
{"title":"Exploring Efficiency and Design Optimization of Flexible Perovskite Solar Cells using SCAPS-1D Simulation","authors":"Elif Damgaci, Emre Kartal, Ayşe Seyhan","doi":"10.55696/ejset.1303146","DOIUrl":"https://doi.org/10.55696/ejset.1303146","url":null,"abstract":"This research focuses on using SCAPS-1D software to design and simulate efficient flexible perovskite solar cells. The study aims to optimize design parameters, gain a deeper understanding of the underlying physics, and obtain valuable insights into electrical characteristics. The device architecture includes key components like PET/ITO substrate, TiO2 ETL, CH3NH3SnI3 absorber, CuSCN HTL, and Au electrode. By optimizing the absorber thickness (600 nm) and temperature (300 K), performance and efficiency of the cell were improved. Investigation of different doping concentrations at 300 K for a fixed thickness revealed an efficiency of 26.98% at 600 nm. The highest efficiency of 31.44% was achieved with a doping concentration of 1E+21. This research showcases the potential of flexible perovskite solar cells for lightweight and versatile applications, emphasizing their significance in the field.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"40 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2023-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"139369590","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
TMDs are semiconductors, unlike graphene, and have a direct bandgap when converted from bulk to thin film. This property makes TMDs an ideal material for optoelectronic and photovoltaic applications due to their strong optical absorption and photoluminescence effect. The WS2, a popular TMD, has unique properties such as low friction coefficient, high thermal stability, and good electrical conductivity, and a bandgap energy of approximately 1.2 eV and 2.2 eV for indirect and direct behaviors. The article also discusses various methods for synthesizing WS2, including chemical vapor deposition (CVD), physical vapor deposition (PVD), hydrothermal synthesis, and solvothermal synthesis. PVD is a scalable method for producing large-area films and coatings with high quality, but the difficulty of controlling the sulfur or selenium sources in this method leads to the need for optimizing growth parameters for large-scale and high-quality WS2 film synthesis. The study reports the successful growth of large-scale and homogeneous WS2 films on a glass substrate using PVD and optimized substrate temperature. The results of this study provide valuable information for the advancement of WS2 film growth techniques and the development of WS2-based semiconductor technologies, such as transistors, diodes, photodetectors, and solar cells.
{"title":"LARGE-SCALE SYNTHESIS OF HOMOGENEOUS WS2 FILMS BY PHYSICAL VAPOR DEPOSITION","authors":"A. Altuntepe, S. Erkan, Güldöne Karadeni̇z","doi":"10.55696/ejset.1301601","DOIUrl":"https://doi.org/10.55696/ejset.1301601","url":null,"abstract":"TMDs are semiconductors, unlike graphene, and have a direct bandgap when converted from bulk to thin film. This property makes TMDs an ideal material for optoelectronic and photovoltaic applications due to their strong optical absorption and photoluminescence effect. The WS2, a popular TMD, has unique properties such as low friction coefficient, high thermal stability, and good electrical conductivity, and a bandgap energy of approximately 1.2 eV and 2.2 eV for indirect and direct behaviors. The article also discusses various methods for synthesizing WS2, including chemical vapor deposition (CVD), physical vapor deposition (PVD), hydrothermal synthesis, and solvothermal synthesis. PVD is a scalable method for producing large-area films and coatings with high quality, but the difficulty of controlling the sulfur or selenium sources in this method leads to the need for optimizing growth parameters for large-scale and high-quality WS2 film synthesis. The study reports the successful growth of large-scale and homogeneous WS2 films on a glass substrate using PVD and optimized substrate temperature. The results of this study provide valuable information for the advancement of WS2 film growth techniques and the development of WS2-based semiconductor technologies, such as transistors, diodes, photodetectors, and solar cells.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114126772","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This article presents an investigation into the structural, optical, and electrical properties of Indium Tin Oxide (ITO) films that were deposited utilizing various plasma powers. The transmittance values in the visible region were measured, revealing that the ITO film deposited at 2050 W exhibited the highest transmittance (81%). Additionally, the sheet resistance values of all films were analyzed, indicating that the ITO film deposited at 2050 W had the lowest sheet resistance (64.9 Ω/sq). By means of XRD analysis, the structural properties of the films were meticulously scrutinized, and the distinctive diffraction peaks associated with the ITO films were successfully identified. Notably, the ITO film deposited at 2050 W demonstrated superior performance compared to the other films deposited using various plasma powers. Finally, we report a noteworthy efficiency of 17.03% achieved in the SHJ solar cell fabricated with the ITO film deposited at 2050 W on a 5x5 cm2 n-type Si substrate.
{"title":"INVESTIGATION OF STRUCTURAL, OPTICAL, AND ELECTRICAL PROPERTIES OF ITO FILMS DEPOSITED AT DIFFERENT PLASMA POWERS: ENHANCED PERFORMANCE AND EFFICIENCY IN SHJ SOLAR CELLS","authors":"Emre Kartal, İlker Duran, E. Damgaci, A. Seyhan","doi":"10.55696/ejset.1297942","DOIUrl":"https://doi.org/10.55696/ejset.1297942","url":null,"abstract":"This article presents an investigation into the structural, optical, and electrical properties of Indium Tin Oxide (ITO) films that were deposited utilizing various plasma powers. The transmittance values in the visible region were measured, revealing that the ITO film deposited at 2050 W exhibited the highest transmittance (81%). Additionally, the sheet resistance values of all films were analyzed, indicating that the ITO film deposited at 2050 W had the lowest sheet resistance (64.9 Ω/sq). By means of XRD analysis, the structural properties of the films were meticulously scrutinized, and the distinctive diffraction peaks associated with the ITO films were successfully identified. Notably, the ITO film deposited at 2050 W demonstrated superior performance compared to the other films deposited using various plasma powers. Finally, we report a noteworthy efficiency of 17.03% achieved in the SHJ solar cell fabricated with the ITO film deposited at 2050 W on a 5x5 cm2 n-type Si substrate.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125359923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this study, a research was carried out on the removal of dyestuff, which is a big problem in the textile industry. The adsorption method was used for the removal of Maxilon Yellow 4GL dyestuff. Cherry laurel leaf (Prunus laurocerasus) and waste potato peels were used as adsorbent, and the removal efficiency was determined as 76.64% at pH 7 and with 2 g adsorbent, 80% dyestuff removal efficiency was achieved in the specified conditions for cherry laurel leaves. For experiments in which waste potato peels were used as adsorbent, the optimum conditions were found as follows: Contact time: 60 minutes, adsorbent concentration of 0.75 grams and initial concentration of 25 mg/L. The Freundlich isotherm model was suitable for our study, since the regression number was found to be 0.999 for cherry laurel leaves and 0.995 for waste potato peels as a result of isotherm studies. According to the cost analysis, the materials supplied free of charge, due to mixing, the electricity cost for treatment (0.128 TL) and the chemical material cost is 17 TL, and it has been determined that these adsorbents are quite economical in dyestuff treatment. As a result, the fact that there is no study on the removal of cherry laurel leaves with the mentioned dyestuff in the literature shows that this study can be further developed.
{"title":"TREATMENT OF TEXTILE WASTEWATER WITH CHERRY LAUREL LEAVES AND WASTE POTATO PEELS","authors":"Şennur Merve Yakut","doi":"10.55696/ejset.1296953","DOIUrl":"https://doi.org/10.55696/ejset.1296953","url":null,"abstract":"In this study, a research was carried out on the removal of dyestuff, which is a big problem in the textile industry. The adsorption method was used for the removal of Maxilon Yellow 4GL dyestuff. Cherry laurel leaf (Prunus laurocerasus) and waste potato peels were used as adsorbent, and the removal efficiency was determined as 76.64% at pH 7 and with 2 g adsorbent, 80% dyestuff removal efficiency was achieved in the specified conditions for cherry laurel leaves. For experiments in which waste potato peels were used as adsorbent, the optimum conditions were found as follows: Contact time: 60 minutes, adsorbent concentration of 0.75 grams and initial concentration of 25 mg/L. The Freundlich isotherm model was suitable for our study, since the regression number was found to be 0.999 for cherry laurel leaves and 0.995 for waste potato peels as a result of isotherm studies. According to the cost analysis, the materials supplied free of charge, due to mixing, the electricity cost for treatment (0.128 TL) and the chemical material cost is 17 TL, and it has been determined that these adsorbents are quite economical in dyestuff treatment. As a result, the fact that there is no study on the removal of cherry laurel leaves with the mentioned dyestuff in the literature shows that this study can be further developed.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132795974","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To be able to predict the forming behavior of sheet metal parts by simulation, it is necessary to determine the FLD1 (Forming Limit Diagram) curves of the sheet material that is subjected to bending, hemming, deep drawing, progressive forming, embossing, hydro-forming processes. To determine such curves, the usual practice is to carry out a series of experiments that need to be repeated many times, and therefore it takes a long time to finalize them [1], [2], [3], [4], [5], [6]. Not to mention undertaken experiments are very detailed and need tedious and careful work has to be done such as screen printing on the material and doing simultaneous optical measurements during the experiments. Indeed, a fully equipped laboratory and qualified lab personnel are required for such experiments which may not be easily found. When it's found, there is usually six months to a year, queue to conduct such experiments. Because of these difficulties, many academic institutions and manufacturing sites develop their in-house test equipment if funding is available. If not, it is dependent on research whether it comes to an end or whether it can continue without it. An alternative method developed for extracting FLD/FLC curves is using today’s state-of-the-art simulation technology. This method requires two main inputs; a) Tensile test of the material b) An explicit solver The scope of this paper is to detail this method such that the findings in this document can be reproduced when the mentioned requirements are satisfied. Therefore, all data used in charts, a high-resolution image, and a sample Abaqus input file are provided as supplemental data [7]. The results from the simulations of FLD/FLC were compared to published literature [13] [14] to confirm their compliance with experiments. The comparison showed good results and demonstrates that expensive and time-consuming FLD/FLC experiments are not necessary when the mentioned requirements are met.
{"title":"ALTERNATIVE NUMERICAL SIMULATION APPROACH FOR OBTAINING FLC/FLD","authors":"S. Di̇kmenli̇","doi":"10.55696/ejset.1212311","DOIUrl":"https://doi.org/10.55696/ejset.1212311","url":null,"abstract":"To be able to predict the forming behavior of sheet metal parts by simulation, it is necessary to determine the FLD1 (Forming Limit Diagram) curves of the sheet material that is subjected to bending, hemming, deep drawing, progressive forming, embossing, hydro-forming processes. To determine such curves, the usual practice is to carry out a series of experiments that need to be repeated many times, and therefore it takes a long time to finalize them [1], [2], [3], [4], [5], [6]. Not to mention undertaken experiments are very detailed and need tedious and careful work has to be done such as screen printing on the material and doing simultaneous optical measurements during the experiments. Indeed, a fully equipped laboratory and qualified lab personnel are required for such experiments which may not be easily found. When it's found, there is usually six months to a year, queue to conduct such experiments. \u0000Because of these difficulties, many academic institutions and manufacturing sites develop their in-house test equipment if funding is available. If not, it is dependent on research whether it comes to an end or whether it can continue without it. \u0000An alternative method developed for extracting FLD/FLC curves is using today’s state-of-the-art simulation technology. This method requires two main inputs; \u0000a) Tensile test of the material \u0000b) An explicit solver \u0000The scope of this paper is to detail this method such that the findings in this document can be reproduced when the mentioned requirements are satisfied. Therefore, all data used in charts, a high-resolution image, and a sample Abaqus input file are provided as supplemental data [7]. \u0000The results from the simulations of FLD/FLC were compared to published literature [13] [14] to confirm their compliance with experiments. The comparison showed good results and demonstrates that expensive and time-consuming FLD/FLC experiments are not necessary when the mentioned requirements are met.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"127 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132233858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of heating rate on the structural and optical properties of Ag+Ge co-doped CZTS thin film were investigated and compared with the undoped CZTS sample. The undoped and Ag+Ge co-doped CZTS samples obtained by two-stage technique consisting of the sequential deposition of the precursor stacks by sputtering systemand sulfurization of these layers at elevated temperature in the RTP system by employing heating rate of 1°C/s, 2°C/s and 3°C/s. Ag and Ge co-doped precursor stack as well as undoped stack demonstrated Cu-poor, Zn-rich composition. In addition, the dopant ratio of the Ag+Ge co-doped stack was close to the targeted content considering to EDS measurement. Regardless of the employed heating rate or the doping process, all of the samples crystallized in a kesterite structure. However, it was confirmed by XRD measurements that high heating rates caused phase separation in kesterite phase formation. On the other hand, The Raman peaks assigned to Cu-vacancy and CuZn antisite defects formation inhibited with incorporating Ag and Ge into the CZTS structure. Ag and Ge co-doped CZTS sample produced with a heating ramp rate of 1°C/s showed better structural and optical results among them.
{"title":"INFLUENCE OF HEATING RATE ON THE STRUCTURAL AND OPTICAL PROPERTIES OF SILVER AND GERMANIUM CO-DOPED CZTS THIN FILM","authors":"Y. Atasoy, A. Çiriş, M. A. Olgar","doi":"10.55696/ejset.1295349","DOIUrl":"https://doi.org/10.55696/ejset.1295349","url":null,"abstract":"The effect of heating rate on the structural and optical properties of Ag+Ge co-doped CZTS thin film were investigated and compared with the undoped CZTS sample. The undoped and Ag+Ge co-doped CZTS samples obtained by two-stage technique consisting of the sequential deposition of the precursor stacks by sputtering systemand sulfurization of these layers at elevated temperature in the RTP system by employing heating rate of 1°C/s, 2°C/s and 3°C/s. Ag and Ge co-doped precursor stack as well as undoped stack demonstrated Cu-poor, Zn-rich composition. In addition, the dopant ratio of the Ag+Ge co-doped stack was close to the targeted content considering to EDS measurement. Regardless of the employed heating rate or the doping process, all of the samples crystallized in a kesterite structure. However, it was confirmed by XRD measurements that high heating rates caused phase separation in kesterite phase formation. On the other hand, The Raman peaks assigned to Cu-vacancy and CuZn antisite defects formation inhibited with incorporating Ag and Ge into the CZTS structure. Ag and Ge co-doped CZTS sample produced with a heating ramp rate of 1°C/s showed better structural and optical results among them.","PeriodicalId":143980,"journal":{"name":"Eurasian Journal of Science Engineering and Technology","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2023-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132690950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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