Annealing experiments in nitrogen, oxygen, and reducing atmospheres are made on mechanically damaged ZnO ceramics. The annealing effect is monitored by means of the sample CL emission. Deformation induced damage appears to be unstable at temperatures above 1040 K indepently of the annealing atmosphere. The role played by reducing and oxidizing treatments on the CL changes in damaged areas is discussed on the basis of different charge states of copper. Der Einflus des Anlassens in N2, O2 und in reduzierenden Atmospharen auf verformte ZnO-Keramik-Proben wird mittels Kathodolumineszenz untersucht. Die von der Verformung erzeugte Defektstruktur ist instabil beim Anlassen uber 1040 K, unabhangig von der Behandlungsatmosphare. Der Effekt von oxydierenden und reduzierenden Behandlungen auf die KL von geschadigten Probengebieten wird auf der Basis der Zustande von Kupferverunreinigungen diskutiert.
{"title":"Annealing Effects on Mechanically Damaged ZnO Ceramics","authors":"P. Fernández, J. Llopis, J. Piqueras","doi":"10.1002/PSSA.2211070120","DOIUrl":"https://doi.org/10.1002/PSSA.2211070120","url":null,"abstract":"Annealing experiments in nitrogen, oxygen, and reducing atmospheres are made on mechanically damaged ZnO ceramics. The annealing effect is monitored by means of the sample CL emission. Deformation induced damage appears to be unstable at temperatures above 1040 K indepently of the annealing atmosphere. The role played by reducing and oxidizing treatments on the CL changes in damaged areas is discussed on the basis of different charge states of copper. \u0000 \u0000 \u0000 \u0000Der Einflus des Anlassens in N2, O2 und in reduzierenden Atmospharen auf verformte ZnO-Keramik-Proben wird mittels Kathodolumineszenz untersucht. Die von der Verformung erzeugte Defektstruktur ist instabil beim Anlassen uber 1040 K, unabhangig von der Behandlungsatmosphare. Der Effekt von oxydierenden und reduzierenden Behandlungen auf die KL von geschadigten Probengebieten wird auf der Basis der Zustande von Kupferverunreinigungen diskutiert.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128317082","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seeded recrystallization of thick (up to 25 μm) polycrystalline silicon on SiO2 using zone melting technique provides films which contain no grain boundaries and exhibit large areas without subgrain boundaries (mm2). The results, especially the comparison of the two irradiation systems used (laser and strip heater), indicate the dominating role of the thermal gradient at the crystallization front for the origin and arrangement of defects. The electrical properties measured at CMOS transistors and diodes are comparable to a bulk reference preparation. Die Rekristallisation von dickem, polykristallinem Silizium auf SiO2 in einem Zonenschmelzprozes fuhrt bei Verwendung eines Kristallisationskeimes zu Schichten, die keine Krongrenzen enthalten und ausgedehnte Gebiete ohne Kleinwinkelkorngrenzen aufweisen (mm2). Die dargestellten Ergebnisse, besonders der Vergleich der Bestrahlung mit Laser und Streifenheizer, zeigen den dominierenden Einflus des Temperaturgradienten an der Kristallisationsfront auf die Entstehung und Anordnung der Defekte. CMOS-Transistoren und Dioden, erzeugt in den SOI-Schichten, haben mit in einkristallinen Substraten praparierten Strukturen vergleichbare Eigenschaften.
Seeded recrystallization of thick (up to 25μm) polycrystalline矽on SiO2教科书区melting technique provides电影的contain无空boundaries and exhibit大型areas菲subgrain boundaries (mm2) .结果是，虽然使用了“两层推力和脱臼”比较，但再明显不过“炉灶里的火”是《制造失败的尾部》的基本原理。特别需要电力和电力实施的后续措施当你用结晶过程，结晶时，它会给SiO2层结晶，过程是结晶过程中的结晶。这种结晶过程会形成不含王冠边境线的一层，无垠的无缩结边长(mm2)。这里所展现的结果，特别是对镭射光和带线粒体放射度的比较，反映了在结晶线温度斜线的影响。cmos晶体管和冠心病是在索尔基下等体所产生的可与此相比。
{"title":"Generation and Characterization of Thick Silicon-on-Insulator Films","authors":"B. Tillack, R. Banisch, H. Richter","doi":"10.1002/PSSA.2211070129","DOIUrl":"https://doi.org/10.1002/PSSA.2211070129","url":null,"abstract":"Seeded recrystallization of thick (up to 25 μm) polycrystalline silicon on SiO2 using zone melting technique provides films which contain no grain boundaries and exhibit large areas without subgrain boundaries (mm2). The results, especially the comparison of the two irradiation systems used (laser and strip heater), indicate the dominating role of the thermal gradient at the crystallization front for the origin and arrangement of defects. The electrical properties measured at CMOS transistors and diodes are comparable to a bulk reference preparation. \u0000 \u0000 \u0000 \u0000Die Rekristallisation von dickem, polykristallinem Silizium auf SiO2 in einem Zonenschmelzprozes fuhrt bei Verwendung eines Kristallisationskeimes zu Schichten, die keine Krongrenzen enthalten und ausgedehnte Gebiete ohne Kleinwinkelkorngrenzen aufweisen (mm2). Die dargestellten Ergebnisse, besonders der Vergleich der Bestrahlung mit Laser und Streifenheizer, zeigen den dominierenden Einflus des Temperaturgradienten an der Kristallisationsfront auf die Entstehung und Anordnung der Defekte. CMOS-Transistoren und Dioden, erzeugt in den SOI-Schichten, haben mit in einkristallinen Substraten praparierten Strukturen vergleichbare Eigenschaften.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117336441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A method for investigating the properties of YSZ by time-domain spectroscopy is described. Simple calculation shows that there are cases where this spectroscopy can distinguish processes not separable by classical Bauerle impedance spectroscopy. Several measurements are performed to demonstrate the ability of this method to investigate the electro-physical properties of YSZ. Eine Methode zum Untersuchen der Eigenschaften von YSZ mittels Transientspektroskopie wird beschrieben. Eine einfache Rechnung zeigt die Existenz der Falle, wo diese Spektroskopie mehrere Prozesse identifizieren kann, die bei der klassischen Bauerle-Impedanzspektroskopie nicht voneinander zu trennen waren. Einige Messungen werden gemacht, um zu demonstrieren, das sich diese Methode dazu eignet, die elektro-physikalischen Eigenschaften von YSZ zu untersuchen.
{"title":"Time-Domain Spectroscopy. Method for Investigation of YSZ","authors":"M. Hrobár, I. Travěnec","doi":"10.1002/PSSA.2211070124","DOIUrl":"https://doi.org/10.1002/PSSA.2211070124","url":null,"abstract":"A method for investigating the properties of YSZ by time-domain spectroscopy is described. Simple calculation shows that there are cases where this spectroscopy can distinguish processes not separable by classical Bauerle impedance spectroscopy. Several measurements are performed to demonstrate the ability of this method to investigate the electro-physical properties of YSZ. \u0000 \u0000 \u0000 \u0000Eine Methode zum Untersuchen der Eigenschaften von YSZ mittels Transientspektroskopie wird beschrieben. Eine einfache Rechnung zeigt die Existenz der Falle, wo diese Spektroskopie mehrere Prozesse identifizieren kann, die bei der klassischen Bauerle-Impedanzspektroskopie nicht voneinander zu trennen waren. Einige Messungen werden gemacht, um zu demonstrieren, das sich diese Methode dazu eignet, die elektro-physikalischen Eigenschaften von YSZ zu untersuchen.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131794502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Formulae are obtained which describe the damping decrement of hysteresis dislocation internal friction with due account of pipe diffusion of mobile pinning points. The amplitude dependence of a damping decrement is described by a non-monotoneous function which has maximum at some value of the applied stress amplitude. The asymptotic formulae are obtained for the damping decrement at low and high amplitudes. The pipe diffusion of pinning points results in the displacement of both the beginning of an amplitude dependence and the point of maximum into the region of low amplitudes. The question is dicsussed about the influence of a number of mobile pinning points and the energy of dislocation interaction with point defect on the amplitude dependence of internal friction. [Russian Text Ignored]
{"title":"Influence of Pipe Diffusion of Defects on the Amplitude Dependence of Hysteresis Internal Friction","authors":"I. Т. Suprun","doi":"10.1002/PSSA.2211070113","DOIUrl":"https://doi.org/10.1002/PSSA.2211070113","url":null,"abstract":"Formulae are obtained which describe the damping decrement of hysteresis dislocation internal friction with due account of pipe diffusion of mobile pinning points. The amplitude dependence of a damping decrement is described by a non-monotoneous function which has maximum at some value of the applied stress amplitude. The asymptotic formulae are obtained for the damping decrement at low and high amplitudes. The pipe diffusion of pinning points results in the displacement of both the beginning of an amplitude dependence and the point of maximum into the region of low amplitudes. The question is dicsussed about the influence of a number of mobile pinning points and the energy of dislocation interaction with point defect on the amplitude dependence of internal friction. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored]","PeriodicalId":148242,"journal":{"name":"May 16","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121695670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Influence of Argon Implantation on the Formation of Platinum Silicides","authors":"V. Borisenko, D. I. Zarovskii, V. Tokarev","doi":"10.1002/PSSA.2211070154","DOIUrl":"https://doi.org/10.1002/PSSA.2211070154","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"367 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121741627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-12-31DOI: 10.1515/9783112495124-040
S. Mazen, A. A. Ghani, A. Ashour
{"title":"Charge Transport in Cu-Cd Ferrospinels","authors":"S. Mazen, A. A. Ghani, A. Ashour","doi":"10.1515/9783112495124-040","DOIUrl":"https://doi.org/10.1515/9783112495124-040","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"36 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126171521","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-12-31DOI: 10.1515/9783112495124-004
Yu. A. Katulevskii
{"title":"Injection of Degenerate Electron-Hole Plasma","authors":"Yu. A. Katulevskii","doi":"10.1515/9783112495124-004","DOIUrl":"https://doi.org/10.1515/9783112495124-004","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131089582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1985-12-31DOI: 10.1515/9783112494646-006
L. J. Gallego, J. Somoza, J. A. Alonso
{"title":"Liquidus Curves of Eutectic Na-K and Na-Cs Systems from Semiempirical Theories of Mixtures","authors":"L. J. Gallego, J. Somoza, J. A. Alonso","doi":"10.1515/9783112494646-006","DOIUrl":"https://doi.org/10.1515/9783112494646-006","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1985-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132737587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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