Pub Date : 1988-12-31DOI: 10.1515/9783112495223-041
O. Kulikova, L. Kulyuk, S. Radautsan, S. A. Ratseev, E. Strumban, V. Tezlevan, V. I. Tsitsanu
{"title":"Influence of Defect Generation Processes in CdIn 2 S 4 Single Crystals on the Photoluminescence and Raman Scattering Spectra","authors":"O. Kulikova, L. Kulyuk, S. Radautsan, S. A. Ratseev, E. Strumban, V. Tezlevan, V. I. Tsitsanu","doi":"10.1515/9783112495223-041","DOIUrl":"https://doi.org/10.1515/9783112495223-041","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131661579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-12-31DOI: 10.1515/9783112495223-053
A. A. A. Hady
{"title":"Annealing Effects on the Electrical Properties of Hg 1-x Cd x Te Grown by Two Different Techniques","authors":"A. A. A. Hady","doi":"10.1515/9783112495223-053","DOIUrl":"https://doi.org/10.1515/9783112495223-053","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128253792","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A refraction shift of the asymmetric Bragg reflection of thermal neutrons is observed. Germanium crystals are used to demonstrate this in an invariant geometry while the index of refraction is changed. Two values of the index-of-refraction jump at one crystal surface are created by simultaneous reflection of neutrons with fractional wavelengths, by immersing the crystal partially a liquid (heavy water), and by creating a jump of magnetic induction at the crystal surface. The observed Bragg reflection shifts reach values of 40 to 50 s of arc. The presented method can be used for measuring the indices of refraction. [Russian Text Ignored]
{"title":"Refraction Shift of Bragg Reflection of Neutrons","authors":"K. Podurets, S. Shilstein, F. Eichhorn","doi":"10.1002/PSSA.2211070142","DOIUrl":"https://doi.org/10.1002/PSSA.2211070142","url":null,"abstract":"A refraction shift of the asymmetric Bragg reflection of thermal neutrons is observed. Germanium crystals are used to demonstrate this in an invariant geometry while the index of refraction is changed. Two values of the index-of-refraction jump at one crystal surface are created by simultaneous reflection of neutrons with fractional wavelengths, by immersing the crystal partially a liquid (heavy water), and by creating a jump of magnetic induction at the crystal surface. The observed Bragg reflection shifts reach values of 40 to 50 s of arc. The presented method can be used for measuring the indices of refraction. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored]","PeriodicalId":148242,"journal":{"name":"May 16","volume":"99 Pt B 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115501808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wrinkle-like domain structures are observed, using Bitter technique, on imperfect iron whiskers which seemingly show changes in the growth axis. The wrinkle domains are bounded by a 90° domain wall that can be considered as a mixed Bloch-Neel wall type. Mit der Bittertechnik werden auf imperfekten Eisen-Whiskern runzelahnliche Domanenstrukturen beobachtet, die scheinbar Anderungen in der Wachstumsachse zeigen. Die Runzeldomanen sind von 90°-Domanenwanden begrenzt, die als ein gemischter Bloch-Neel-Wandtyp betrachtet werden konnen.
发生在“绿色增长”中的悲剧本地连接wrinkle bounded里收录的《a 90°a .华尔街那所能considered as a综合Bloch-Neel华尔街家伙.苦涩的现代科技观察着不完美的麦酒皱轴系这些Runzeldomanen 90°-Domanenwanden有限常被视为一个混合Bloch-Neel-Wandtyp .他们可以
{"title":"Wrinkle-Like Domain Structures on Imperfect Iron Whiskers","authors":"J. Fuertes, M. Tejedor","doi":"10.1002/PSSA.2211070136","DOIUrl":"https://doi.org/10.1002/PSSA.2211070136","url":null,"abstract":"Wrinkle-like domain structures are observed, using Bitter technique, on imperfect iron whiskers which seemingly show changes in the growth axis. The wrinkle domains are bounded by a 90° domain wall that can be considered as a mixed Bloch-Neel wall type. \u0000 \u0000 \u0000 \u0000Mit der Bittertechnik werden auf imperfekten Eisen-Whiskern runzelahnliche Domanenstrukturen beobachtet, die scheinbar Anderungen in der Wachstumsachse zeigen. Die Runzeldomanen sind von 90°-Domanenwanden begrenzt, die als ein gemischter Bloch-Neel-Wandtyp betrachtet werden konnen.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123782794","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Theoretical analysis of mass transfer process at zone sublimation regrowth (ZSR) is performed. An experiment is carried out for the case of silicon. Principal regularities for ZSR process are found: the dependence of the process rate and dopant transfer efficiency on temperature and geometrical parameters as well as radial distribution of their values. It is established that the type of dopant mass transfer regularities is determined by an atom distribution law along their motion during evaporation and reevaporation from the source and the substrate surfaces. Experimental results obtained for As, Ga, Sb atom transfer are in good agreement with the theoretical model for atom distribution according to isotropic law. [Russian Text Ignored]
{"title":"Silicon Zone Sublimation Regrowth","authors":"L. Aleksandrov, S. V. Lozovskii, S. Knyazev","doi":"10.1002/PSSA.2211070122","DOIUrl":"https://doi.org/10.1002/PSSA.2211070122","url":null,"abstract":"Theoretical analysis of mass transfer process at zone sublimation regrowth (ZSR) is performed. An experiment is carried out for the case of silicon. Principal regularities for ZSR process are found: the dependence of the process rate and dopant transfer efficiency on temperature and geometrical parameters as well as radial distribution of their values. It is established that the type of dopant mass transfer regularities is determined by an atom distribution law along their motion during evaporation and reevaporation from the source and the substrate surfaces. Experimental results obtained for As, Ga, Sb atom transfer are in good agreement with the theoretical model for atom distribution according to isotropic law. \u0000 \u0000 \u0000 \u0000[Russian Text Ignored]","PeriodicalId":148242,"journal":{"name":"May 16","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116070960","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lateral scans of free carrier infrared absorption with lateral resolution of 100 μm and Hall effect measurements with sampling areas of 2.5 × 5 mm2 and 5 × 5 mm2 are performed across (001) wafers cut from Sn- and S-doped 〈111〉 LEC InP crystals. Considerable microinhomogeneities as well as macroinhomogeneities are detected in the distributions of the concentrations of free carriers, of donors, and of compensating acceptors. The macroinhomogeneities are found to be due to growth facets representing regions of increased carrier concentration, while the microinhomogeneities are growth striations appearing both, in and outside of facets. This behaviour which is in contrast to the results from Sn- and chalcogen-doped 〈100〉 LEC GaAs may be understood by considering the 〈111〉 growth direction of the InP crystals. Reasons for differences between the optical and electrical values of the compensation ratio observed, as well as possible origins of the compensating acceptors are discussed. Laterale Abtastungen der Infrarot-Absorption freier Trager mit einer lateralen Auflosung von 100 μm und Halleffektsmessungen mit Abtastflachen von 2,5 × 5 mm2 und 5 × 5 mm2 werden an (001)-Scheiben aus Sn- und S-dotierten 〈111〉-LEC-InP-Kristallen durchgefuhrt. Sowohl betrachtliche Mikroinhomogenitaten als auch Makroinhomogenitaten in den Verteilungen der Konzentrationen der freien Trager, der Donatoren und der kompensierenden Akzeptoren werden nachgewiesen. Die Makroinhomogenitaten ruhren von Wachstumsfacetten her, die Bereiche erhohter Tragerkonzentration darstellen, wahrend die Mikroinhomogenitaten Wachstumsstreifen sind, die sowohl innerhalb als auch auserhalb der Facetten auftreten. Dieses Verhalten, welches im Gegensatz zu den Resultaten an Sn- und Chalkogen-dotiertem 〈100〉-LEC-GaAs steht, kann verstanden werden, wenn man die 〈111〉-Wachstumsrichtung der InP-Kristalle berucksichtigt. Grunde fur beobachtete Unterschiede zwischen den optischen und elektrischen Werten des Kompensationsgrades sowie die mogliche Herkunft der kompensierenden Akzeptoren werden diskutiert.
对(001)片进行了横向分辨率为100 μm的自由载流子红外吸收扫描和取样面积为2.5 × 5 mm2和5 × 5 mm2的霍尔效应测量，分别由Sn和s掺杂的< 111 > LEC InP晶体切割而成。在自由载流子、供体和补偿受体的浓度分布中发现了相当大的微观不均匀性和宏观不均匀性。宏观上的不均匀性是由于代表载流子浓度增加区域的生长面，而微观上的不均匀性是在表面内外同时出现的生长条纹。这种行为与锡和硫掺杂< 100 > LEC GaAs的结果相反，可以通过考虑InP晶体的< 111 >生长方向来理解。讨论了观察到的补偿比的光学和电学值之间差异的原因，以及补偿受体的可能来源。(1)- scheiben - Sn- and S-dotierten < 111 > - lecl - inp - kristallen durchgefuhrt。(1)- scheiben - Sn- and S-dotierten < 111 > - lee - inp - kristallen durchgefuhrt。Sowohl betrachtliche microkroinhomogenaten也为makroinhomogenaten在verilungen der Konzentrationen der freien Trager, der donor和der kompensierenden Akzeptoren werden nachgewiesen。Die makroinhomogenaten ruhren von Wachstumsfacetten her, Die Bereiche erhohter Tragerkonzentration darstellen, Die microroinhomogenaten Wachstumsstreifen sind, Die sowohl innerhalb der Facetten auteten。这本Verhalten,韦尔奇im Gegensatz吧台Resultaten Sn -和Chalkogen-dotiertem < 100 > -LEC-GaAs steht,萤石verstanden了,人要是死< 111 > -Wachstumsrichtung der InP-Kristalle berucksichtigt。在光学和电子领域，我们都有自己的研究方向，我们都有自己的研究方向。
{"title":"Doping Inhomogeneities and Compensation in n-Type LEC InP Wafers","authors":"D. Wruck, A. Knauer","doi":"10.1002/PSSA.2211070134","DOIUrl":"https://doi.org/10.1002/PSSA.2211070134","url":null,"abstract":"Lateral scans of free carrier infrared absorption with lateral resolution of 100 μm and Hall effect measurements with sampling areas of 2.5 × 5 mm2 and 5 × 5 mm2 are performed across (001) wafers cut from Sn- and S-doped 〈111〉 LEC InP crystals. Considerable microinhomogeneities as well as macroinhomogeneities are detected in the distributions of the concentrations of free carriers, of donors, and of compensating acceptors. The macroinhomogeneities are found to be due to growth facets representing regions of increased carrier concentration, while the microinhomogeneities are growth striations appearing both, in and outside of facets. This behaviour which is in contrast to the results from Sn- and chalcogen-doped 〈100〉 LEC GaAs may be understood by considering the 〈111〉 growth direction of the InP crystals. Reasons for differences between the optical and electrical values of the compensation ratio observed, as well as possible origins of the compensating acceptors are discussed. \u0000 \u0000 \u0000 \u0000Laterale Abtastungen der Infrarot-Absorption freier Trager mit einer lateralen Auflosung von 100 μm und Halleffektsmessungen mit Abtastflachen von 2,5 × 5 mm2 und 5 × 5 mm2 werden an (001)-Scheiben aus Sn- und S-dotierten 〈111〉-LEC-InP-Kristallen durchgefuhrt. Sowohl betrachtliche Mikroinhomogenitaten als auch Makroinhomogenitaten in den Verteilungen der Konzentrationen der freien Trager, der Donatoren und der kompensierenden Akzeptoren werden nachgewiesen. Die Makroinhomogenitaten ruhren von Wachstumsfacetten her, die Bereiche erhohter Tragerkonzentration darstellen, wahrend die Mikroinhomogenitaten Wachstumsstreifen sind, die sowohl innerhalb als auch auserhalb der Facetten auftreten. Dieses Verhalten, welches im Gegensatz zu den Resultaten an Sn- und Chalkogen-dotiertem 〈100〉-LEC-GaAs steht, kann verstanden werden, wenn man die 〈111〉-Wachstumsrichtung der InP-Kristalle berucksichtigt. Grunde fur beobachtete Unterschiede zwischen den optischen und elektrischen Werten des Kompensationsgrades sowie die mogliche Herkunft der kompensierenden Akzeptoren werden diskutiert.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122765464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The scattering of conduction electrons at grain boundaries in polycrystalline copper, molybdenum, and iron is studied. Linear functions of the specific electrical resistance versus concentration of grain boundaries are determined. Coefficients of conduction electron scattering kGB at grain boundaries as well as the specific electrical resistance of a single crystal are also determined for these metals. Additionally, the mean free path, lo, and the reflection coefficient, R, for conduction electrons are assessed from the internal size effect in the temperature range from 80 to 300 K.
{"title":"Scattering of Conductivity Electrons on Grain Boundaries in Metals","authors":"P. Kwapuliński, J. Rasek, Z. Gierak","doi":"10.1002/PSSA.2211070131","DOIUrl":"https://doi.org/10.1002/PSSA.2211070131","url":null,"abstract":"The scattering of conduction electrons at grain boundaries in polycrystalline copper, molybdenum, and iron is studied. Linear functions of the specific electrical resistance versus concentration of grain boundaries are determined. Coefficients of conduction electron scattering kGB at grain boundaries as well as the specific electrical resistance of a single crystal are also determined for these metals. Additionally, the mean free path, lo, and the reflection coefficient, R, for conduction electrons are assessed from the internal size effect in the temperature range from 80 to 300 K.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115050515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The effect of overstoichiometric tellurium on the electric activity of impurities and on the magnetic susceptibility of the Pb1−xSnxTe single crystals is studied. The existence of the above mentioned tellurium is shown to reduce the donor activity of cadmium and stibium impurities, and also to increase the magnetic susceptibility of crystals of materials under investigation. The results are interpreted using the model of the overstoichiometric tellurium forming in crystals of plumbum and tin tellurides at least the two types of native defects: the point defects and the precipitatetype bulk defects. The concentration of the former is determined mainly by the composition of the crystals and can not exceed some fixed value for the given x. The concentration of the latter can vary in wide range and is distributed over the bulk of the grown crystals in a substantially nonuniform manner. Der Einflus von uberstochiometrischem Tellur auf die elektrische Aktivitat von Storstellen und auf die magnetische Suszeptibilitat von Pb1−xSnxTe-Einkristallen wird untersucht. Es wird gezeigt, das die Existenz des oben erwahnten Tellur die Donatoraktivitat von Kadmium- und Antimon-Storstellen reduziert und die magnetische Suszeptibilitat von Kristallen des untersuchten Materials erhoht. Die Ergebnisse werden mit dem Modell des uberstochiometrischen Tellur in Blei- und Zinntelluridkristallen und wenigstens zwei Arten von Eigendefekten interpretiert: Punktdefekte und Volumenprazipitate. Die Konzentration der ersteren wird hauptsachlich durch die Zusammensetzung der Kristalle bestimmt und kann einen bestimmten festen Wert fur ein gegebenes x nicht uberschreiten. Die Konzentration der letzteren kann in einem weiten Bereich variieren und ist uber das Volumen der gewachsenen Kristalle in einer wesentlich ungleichformigen Weise verteilt.
研究了过量化学计量碲对杂质电活性和Pb1−xSnxTe单晶磁化率的影响。上述碲的存在降低了镉和锑杂质的供体活性，也增加了所研究材料晶体的磁化率。用过量化学计量碲在铅和碲化锡晶体中形成的模型，解释了至少两种类型的天然缺陷:点缺陷和沉淀型体缺陷。前者的浓度主要由晶体的组成决定，在给定的x下不能超过某一固定值。后者的浓度变化范围很广，并且在生长的晶体中以基本上不均匀的方式分布。Der Einflus von uberstochiometrischem和auf die magnetische Suszeptibilitat von Pb1−xSnxTe-Einkristallen wind untersucht。在此基础上，研究人员提出了一种新型的金属材料:金属材料、金属材料、金属材料、金属材料等。[2][1]在德国，我们的研究对象是德国的生物计量学模型，德国的生物计量学模型，德国的生物计量学模型，德国的生物计量学模型，德国的生物计量学模型。在自然界中，人类的生存能力和生存能力比在人类的生存能力和生存能力更强。在德国，在德国，在德国，在德国，在德国，在德国，在德国，在德国，在德国，在德国，在德国。
{"title":"The Effect of Nonstoichiometric Tellurium on the Properties of Lead and Tin Tellurides","authors":"D. Zayachuk, P. M. Starik, V. Shenderovskii","doi":"10.1002/PSSA.2211070108","DOIUrl":"https://doi.org/10.1002/PSSA.2211070108","url":null,"abstract":"The effect of overstoichiometric tellurium on the electric activity of impurities and on the magnetic susceptibility of the Pb1−xSnxTe single crystals is studied. The existence of the above mentioned tellurium is shown to reduce the donor activity of cadmium and stibium impurities, and also to increase the magnetic susceptibility of crystals of materials under investigation. The results are interpreted using the model of the overstoichiometric tellurium forming in crystals of plumbum and tin tellurides at least the two types of native defects: the point defects and the precipitatetype bulk defects. The concentration of the former is determined mainly by the composition of the crystals and can not exceed some fixed value for the given x. The concentration of the latter can vary in wide range and is distributed over the bulk of the grown crystals in a substantially nonuniform manner. \u0000 \u0000 \u0000 \u0000Der Einflus von uberstochiometrischem Tellur auf die elektrische Aktivitat von Storstellen und auf die magnetische Suszeptibilitat von Pb1−xSnxTe-Einkristallen wird untersucht. Es wird gezeigt, das die Existenz des oben erwahnten Tellur die Donatoraktivitat von Kadmium- und Antimon-Storstellen reduziert und die magnetische Suszeptibilitat von Kristallen des untersuchten Materials erhoht. Die Ergebnisse werden mit dem Modell des uberstochiometrischen Tellur in Blei- und Zinntelluridkristallen und wenigstens zwei Arten von Eigendefekten interpretiert: Punktdefekte und Volumenprazipitate. Die Konzentration der ersteren wird hauptsachlich durch die Zusammensetzung der Kristalle bestimmt und kann einen bestimmten festen Wert fur ein gegebenes x nicht uberschreiten. Die Konzentration der letzteren kann in einem weiten Bereich variieren und ist uber das Volumen der gewachsenen Kristalle in einer wesentlich ungleichformigen Weise verteilt.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124781994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Intrinsic and Deep Centre Charge Carriers in Indium Antimonide","authors":"V. Kosarev, V. Popov, V. Vekshina, N. I. Pepik","doi":"10.1002/PSSA.2211070156","DOIUrl":"https://doi.org/10.1002/PSSA.2211070156","url":null,"abstract":"","PeriodicalId":148242,"journal":{"name":"May 16","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122357907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P. Grima, M. Quintero, G. S. Pérez, R. Tovar, J. Woolley
Polycrystalline samples of Hg2x(AgIn)1−xTe2 alloys are prepared by the melt and anneal technique. Differential thermal analysis (DTA) measurements are carried out on the alloys and the T(x) diagram determined. Guinier X-ray powder photographs are used to show the equilibrium conditions and to give lattice parameter values. Only two single phase solid fields, the zincblende and chalcopyrite fields are found to exist in the diagram. The form of the solidus curve bounding a wide two-phase liquid plus solid field shows that the section is not pseudobinary. Microscopic and DTA data show the presence of the dissociated phase in the grain boundaries of the zinc-blende phase at temperatures below 400 °C. Polykristalline Proben von Hg2x(AgIn)1−xTe2-Legierungen werden mittels Schmelz- und Temperungstechnik prapariert. Thermische Differentialanalyse (DTA) wird an den Legierungen durchgefuhrt und das T(x)-Diagramm bestimmt. Guinier-Rontgen-Pulverphotographien werden benutzt, um die Gleichgewichstbedingungen zu zeigen und Gitterparameterwerte anzugeben. Es wird gefunden, das nur zwei Ein-Phasen-Festkorperfelder, die Zinkblende- und Chalkopyrit-Felder in dem Diagramm existieren. Die Form der Soliduskurve, die ein weites Zweiphasen-Flussigkeits- und Festkorperfeld begrenzt, zeigt, das der Abschnitt nicht pseudobinar ist. Mikroskopische und DTA-Werte zeigen die Anwesenheit der dissoziierten Phase in den Korngrenzen der Zinkblendephase bei Temperaturen unterhalb 400 °C.
采用熔体退火法制备了Hg2x(AgIn)1−xTe2合金的多晶样品。对合金进行差热分析(DTA)测量并确定T(x)图。用吉尼尔x射线粉末照片来显示平衡条件和给出晶格参数值。图中只发现锌闪锌矿场和黄铜矿场两个单相固体场。宽两相液加固场边界的固相曲线形式表明该剖面不是伪二元的。显微和差热分析表明，当温度低于400℃时，锌-闪锌矿相的晶界处存在解离相。polycrystalline Proben von Hg2x(AgIn)1−xTe2-Legierungen werden mittelels Schmelz- and Temperungstechnik parariert。热热差分析(DTA)、热热差分析(DTA)、热热差分析(DTA)、热热差分析(DTA)、热热差分析(DTA)和热热差分析(T(x)图)。guinier - rontgen - phoggraphien werden benget, um die Gleichgewichstbedingungen zu zeigen and Gitterparameterwerte anzugeben。在dem图中，存在着e- wind gefunden、d - phase - festkorperfelder、d - Zinkblende- and - chalkopyrite - felder。模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型，模具成型。microskopische和DTA-Werte zeigen die Anwesenheit der dissozierten Phase in den Korngrenzen der zinkblblentphase，温度低于400℃。
{"title":"Phase Diagram and Lattice Parameter Values for the Hg 2x(AgIn) 1-x Te 2 Alloys","authors":"P. Grima, M. Quintero, G. S. Pérez, R. Tovar, J. Woolley","doi":"10.1002/PSSA.2211070116","DOIUrl":"https://doi.org/10.1002/PSSA.2211070116","url":null,"abstract":"Polycrystalline samples of Hg2x(AgIn)1−xTe2 alloys are prepared by the melt and anneal technique. Differential thermal analysis (DTA) measurements are carried out on the alloys and the T(x) diagram determined. Guinier X-ray powder photographs are used to show the equilibrium conditions and to give lattice parameter values. Only two single phase solid fields, the zincblende and chalcopyrite fields are found to exist in the diagram. The form of the solidus curve bounding a wide two-phase liquid plus solid field shows that the section is not pseudobinary. Microscopic and DTA data show the presence of the dissociated phase in the grain boundaries of the zinc-blende phase at temperatures below 400 °C. \u0000 \u0000 \u0000 \u0000Polykristalline Proben von Hg2x(AgIn)1−xTe2-Legierungen werden mittels Schmelz- und Temperungstechnik prapariert. Thermische Differentialanalyse (DTA) wird an den Legierungen durchgefuhrt und das T(x)-Diagramm bestimmt. Guinier-Rontgen-Pulverphotographien werden benutzt, um die Gleichgewichstbedingungen zu zeigen und Gitterparameterwerte anzugeben. Es wird gefunden, das nur zwei Ein-Phasen-Festkorperfelder, die Zinkblende- und Chalkopyrit-Felder in dem Diagramm existieren. Die Form der Soliduskurve, die ein weites Zweiphasen-Flussigkeits- und Festkorperfeld begrenzt, zeigt, das der Abschnitt nicht pseudobinar ist. Mikroskopische und DTA-Werte zeigen die Anwesenheit der dissoziierten Phase in den Korngrenzen der Zinkblendephase bei Temperaturen unterhalb 400 °C.","PeriodicalId":148242,"journal":{"name":"May 16","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1988-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121719769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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