Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997601
H. Rekab-Djabri, S. Fasla
We have applied a recent version of the full potential linear muffin-tin orbitals method (FPLMTO) to study the structural properties of copper halides CuX (X=Cl, Br, I) under high pressure using the generalized gradient approximation (GGA) for the exchange and correlation potential by Perdew et al. Results are given for lattice parameters, bulk modulus and its first derivatives in the wurtzite( B4), zinc-blende (B3), CsCl (B2), rock-salt (B1), and PbO (B10) structures. The results of these calculations are compared with the available theoretical and experimental data.
{"title":"Theory study of structural properties of copper halides","authors":"H. Rekab-Djabri, S. Fasla","doi":"10.1109/NAWDMPV.2014.6997601","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997601","url":null,"abstract":"We have applied a recent version of the full potential linear muffin-tin orbitals method (FPLMTO) to study the structural properties of copper halides CuX (X=Cl, Br, I) under high pressure using the generalized gradient approximation (GGA) for the exchange and correlation potential by Perdew et al. Results are given for lattice parameters, bulk modulus and its first derivatives in the wurtzite( B4), zinc-blende (B3), CsCl (B2), rock-salt (B1), and PbO (B10) structures. The results of these calculations are compared with the available theoretical and experimental data.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114190949","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997597
Ahmed‐Ali Kanoun, S. Goumri‐Said
In MOSFET devices technology, many difficulties arise when severe short channel effects begin to show up when the channel lengths and dimension of the conventional planar MOSFET are scaled down to shorter. The research of alternate device has results on the invention of the FinFet, considered as a variant of the conventional planar MOSFET but more resilient to short channel effects. In this work, we focus on the symmetrical double gate FET (SDGFET) using a Drift-Diffusion model, resolved self-consistently. This model was designed for charged particles motion equation in nanodevices, where important effects such as quantum confinement, diffusive transport and electrostatic interaction are considered. It is found that the characteristic of the SDGFET is depending on different parameters, in particular the thickness of the oxide layer and also the most important external parameter: temperature.
{"title":"Characterization of DGFET properties from multiscale modeling: Effects of oxide thickness and temperature","authors":"Ahmed‐Ali Kanoun, S. Goumri‐Said","doi":"10.1109/NAWDMPV.2014.6997597","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997597","url":null,"abstract":"In MOSFET devices technology, many difficulties arise when severe short channel effects begin to show up when the channel lengths and dimension of the conventional planar MOSFET are scaled down to shorter. The research of alternate device has results on the invention of the FinFet, considered as a variant of the conventional planar MOSFET but more resilient to short channel effects. In this work, we focus on the symmetrical double gate FET (SDGFET) using a Drift-Diffusion model, resolved self-consistently. This model was designed for charged particles motion equation in nanodevices, where important effects such as quantum confinement, diffusive transport and electrostatic interaction are considered. It is found that the characteristic of the SDGFET is depending on different parameters, in particular the thickness of the oxide layer and also the most important external parameter: temperature.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116001232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997614
Chahrazed Boudaoud, A. Hamdoune, Z. Allam
The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
iii -氮化物材料体系为开发高效太阳能电池提供了巨大的潜力。InxGa1-xN合金体系的直接间隙从近红外波段的InN (0.7 eV)不断扩大到中紫外波段的GaN (3.4 eV)。本文利用SILVACO软件模拟了单太阳光照条件下InGaN太阳能电池的性能。
{"title":"Simulation of p-GaN/ i-InGaN/n-GaN solar cell","authors":"Chahrazed Boudaoud, A. Hamdoune, Z. Allam","doi":"10.1109/NAWDMPV.2014.6997614","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997614","url":null,"abstract":"The III-nitride material system offers substantial potential to develop high-efficiency solar cells. The direct gap of the InxGa1-xN alloy system extends continuously from InN (0.7 eV, in the near IR) to GaN (3.4 eV, in the mid-ultraviolet). In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132502532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997595
N. Medjahdi, N. Benmoussa
MEMS are systems of small size, light weight, enhanced performance and reliability finding widest of applications in sectors of Automotive, instrumentation and environment area, especially in aspects of weather monitoring and forecast. Nowadays it has become common for scientist and engineers working in micro-electro mechanical system area to simulate the structure using simulation software like COMSOL before actual fabrication. The software helps to create the structure, mesh it and then simulate. In this paper we have modeled and simulated the micro pressure sensor wish can be used to determine the environment pressure with for example piezoresistive detection. The analysis is carried out for different parameters. In this work we need to study the stress repartition on the Silicon membrane surface. This study is very important because it allows us to determinate where the stress is maximal and to place there the four piezoresistors, wish provides a maximal sensitivity to the pressure. Differing from traditional silicon piezoresistive pressure sensor, we use platinum piezoresistive pressure sensor, in wish platinium is used as the piezoresistor material of pressure sensor. We use platinium as the sensing material of pressure sensor to simplify the fabrication process to integrate pressure sensor into for example multisensor for micro wheather station.
{"title":"Modeling and simulation using finite element method of MEMS based micro pressure sensor","authors":"N. Medjahdi, N. Benmoussa","doi":"10.1109/NAWDMPV.2014.6997595","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997595","url":null,"abstract":"MEMS are systems of small size, light weight, enhanced performance and reliability finding widest of applications in sectors of Automotive, instrumentation and environment area, especially in aspects of weather monitoring and forecast. Nowadays it has become common for scientist and engineers working in micro-electro mechanical system area to simulate the structure using simulation software like COMSOL before actual fabrication. The software helps to create the structure, mesh it and then simulate. In this paper we have modeled and simulated the micro pressure sensor wish can be used to determine the environment pressure with for example piezoresistive detection. The analysis is carried out for different parameters. In this work we need to study the stress repartition on the Silicon membrane surface. This study is very important because it allows us to determinate where the stress is maximal and to place there the four piezoresistors, wish provides a maximal sensitivity to the pressure. Differing from traditional silicon piezoresistive pressure sensor, we use platinum piezoresistive pressure sensor, in wish platinium is used as the piezoresistor material of pressure sensor. We use platinium as the sensing material of pressure sensor to simplify the fabrication process to integrate pressure sensor into for example multisensor for micro wheather station.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125511358","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997603
Zair Latifa, M. Ulrich, Berrayah Abdelkader, Hadjou Bélaid Zakia
In this work we are interested with the dynamic behavior and density of PDLCs films (Polymer Dispersed Liquid Crystals).constituted of the microdroplets of nematic liquid crystal E7 dispersed in two types of polymer matrix; Tripropylene glycol diacrylate (TPGDA) or Propoxylene-glyceryl-triacrylate (GPTA). These films are prepared by polymerization induced phases separation by electron-beam (EB) or ultra-violet (UV) radiation. Films obtained are characterized by a Dynamic Mechanical Thermal Analysis. The experimental results show that GPTA films have a module of conservation higher than that of TPGDA films for the two types of irradiation. Density of these films with various thicknesses is given with and without liquid crystal for to see the effect of this last on the properties of the TPGDA/E7 and GPTA/E7 systems. The presence of microdroplets of liquid crystal E7 in the matrix TPGDA or GPTA affect the density of systems studied who is weaker for the films with matrix TPGDA; this can be connected with the nature of the monomers GPTA three-functionals, what carries with films more dense.
{"title":"Dynamical behavior and density of the Polymer / Liquid Crystal blends prepared by polymerization induced phase separation","authors":"Zair Latifa, M. Ulrich, Berrayah Abdelkader, Hadjou Bélaid Zakia","doi":"10.1109/NAWDMPV.2014.6997603","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997603","url":null,"abstract":"In this work we are interested with the dynamic behavior and density of PDLCs films (Polymer Dispersed Liquid Crystals).constituted of the microdroplets of nematic liquid crystal E7 dispersed in two types of polymer matrix; Tripropylene glycol diacrylate (TPGDA) or Propoxylene-glyceryl-triacrylate (GPTA). These films are prepared by polymerization induced phases separation by electron-beam (EB) or ultra-violet (UV) radiation. Films obtained are characterized by a Dynamic Mechanical Thermal Analysis. The experimental results show that GPTA films have a module of conservation higher than that of TPGDA films for the two types of irradiation. Density of these films with various thicknesses is given with and without liquid crystal for to see the effect of this last on the properties of the TPGDA/E7 and GPTA/E7 systems. The presence of microdroplets of liquid crystal E7 in the matrix TPGDA or GPTA affect the density of systems studied who is weaker for the films with matrix TPGDA; this can be connected with the nature of the monomers GPTA three-functionals, what carries with films more dense.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130318158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997599
M. Benhaliliba, Y. Ocak, H. Mokhtari, C. E. Benouis
Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10-6 T, having a diameter of 1.5 mm and a thickness around 250 ± 10 nm. In this research, the electronic parameters of Au/PVP/p-Si/Al structures have been investigated. The obtained values indicate that the electronic parameters of the diode, like ideality factor (n), saturation current, barrier height (ΦB), and rectification coefficient (R) are respectively found to be (in dark) 2.2, 0.8 μA, 0.61 V, and 1.85×104. The open circuit voltage VOC is about 0.2 V. A non-diode ideal behavior is observed and ideality factor exceeds the unity (n>5). Consequently, VOC only depends on the solar cell material. We fabricate the device in the aim to use it in solar cell, photodiode and photoconductor applications.
{"title":"Synthesis and properties of Au/PVP/p-Si/Al heterojunction diode","authors":"M. Benhaliliba, Y. Ocak, H. Mokhtari, C. E. Benouis","doi":"10.1109/NAWDMPV.2014.6997599","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997599","url":null,"abstract":"Properties of heterojunction diodes having polyvinyl pyrrolidone (PVP) on p-Si substrate are investigated. PVP layer has grown onto p type silicon substrate via the sol gel spin coating route @ 2000 rpm. The Front contacts have been thermally evaporated in vacuum onto the organic layer at low pressure of 10-6 T, having a diameter of 1.5 mm and a thickness around 250 ± 10 nm. In this research, the electronic parameters of Au/PVP/p-Si/Al structures have been investigated. The obtained values indicate that the electronic parameters of the diode, like ideality factor (n), saturation current, barrier height (ΦB), and rectification coefficient (R) are respectively found to be (in dark) 2.2, 0.8 μA, 0.61 V, and 1.85×104. The open circuit voltage VOC is about 0.2 V. A non-diode ideal behavior is observed and ideality factor exceeds the unity (n>5). Consequently, VOC only depends on the solar cell material. We fabricate the device in the aim to use it in solar cell, photodiode and photoconductor applications.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114026733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997621
H. Berrezoug, A. E. Merad, A. Zerga, Z. S. Hassoun
In the present study the results of an ab-initio theoretical study of the electronic structural and optical properties corrected by scissor of zinc oxide in wurtzite phase using an implementation of the FP method(L) APW in the framework of the density functional theory (DFT); the potential for exchange and correlation is treated within the generalized gradient approximation of the Engel-Vosko GGA-EV for the calculation of electronic and optical properties of ZnO. To validate our approach, we compare the results of electronic properties with those obtained using the generalized gradient approximation parameterized by Perdew, Burk and Emzerhop Perdew (GGA-PBE). The frequency dependent complex dielectric function ε (ω) is calculated as well as the reflectivity and absorption coefficient. Our calculations show that the optical absorption edge to ε2xx (ω) and ε2zz (ω) are located around 3.19 eV. The structural properties, the band structure and density of states are present. The lattice constants of ZnO calculated in this study are in agreement with the experimental values and the band gap obtained by the GGA-EV yielded a broad and narrow valence band relative to GGA-PBE. Moreover, EV-GGA yielded a large separation between the states d of Zn and states p of O, thereby reducing the repulsion p-d and therefore improved the energy band.
{"title":"Ab-initio calculations of structural, electronic, and dielectric properties of ZnO","authors":"H. Berrezoug, A. E. Merad, A. Zerga, Z. S. Hassoun","doi":"10.1109/NAWDMPV.2014.6997621","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997621","url":null,"abstract":"In the present study the results of an ab-initio theoretical study of the electronic structural and optical properties corrected by scissor of zinc oxide in wurtzite phase using an implementation of the FP method(L) APW in the framework of the density functional theory (DFT); the potential for exchange and correlation is treated within the generalized gradient approximation of the Engel-Vosko GGA-EV for the calculation of electronic and optical properties of ZnO. To validate our approach, we compare the results of electronic properties with those obtained using the generalized gradient approximation parameterized by Perdew, Burk and Emzerhop Perdew (GGA-PBE). The frequency dependent complex dielectric function ε (ω) is calculated as well as the reflectivity and absorption coefficient. Our calculations show that the optical absorption edge to ε2xx (ω) and ε2zz (ω) are located around 3.19 eV. The structural properties, the band structure and density of states are present. The lattice constants of ZnO calculated in this study are in agreement with the experimental values and the band gap obtained by the GGA-EV yielded a broad and narrow valence band relative to GGA-PBE. Moreover, EV-GGA yielded a large separation between the states d of Zn and states p of O, thereby reducing the repulsion p-d and therefore improved the energy band.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115588165","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997609
A. Kermad, N. Ghellai, K. Khaldi, S. Sam, N. Gabouze
In this present work, it was reported the functionalization of porous silicon surface in order to immobilize HRP. Multistep strategy was used allowing maintaining the enzymatic activity. First, acid terminations were generated on hydrogenated PSi surface by thermal hydrosilylation reaction of undecylenic acid with silicon hydrides. Then, the carboxyl-terminated monolayer was transformed to active ester (succinimidyl ester) using N-hydroxysuccinimide (NHS) in the presence of the coupling agent N-ethyl-N'-(3-dimethylaminopropyl) carbodiimide (EDC). Subsequently, the enzyme was anchored on the surface via an amidation reaction. The structure of the modified PSi layers was observed by scanning electron microscopy (SEM). The HRP-immobilized electrode was investigated by cyclic voltammetry (CV). The CV results showed that the modified electrode gave rise to well-defined peaks in phosphate buffer, corresponding to the electrochemical redox reaction between HRP-FeIII and HRP-FeII. The obtained electrode also displayed an electrocatalytic reduction behavior towards H2O2.
{"title":"Functionalization of porous silicon layers for detection of pollutants","authors":"A. Kermad, N. Ghellai, K. Khaldi, S. Sam, N. Gabouze","doi":"10.1109/NAWDMPV.2014.6997609","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997609","url":null,"abstract":"In this present work, it was reported the functionalization of porous silicon surface in order to immobilize HRP. Multistep strategy was used allowing maintaining the enzymatic activity. First, acid terminations were generated on hydrogenated PSi surface by thermal hydrosilylation reaction of undecylenic acid with silicon hydrides. Then, the carboxyl-terminated monolayer was transformed to active ester (succinimidyl ester) using N-hydroxysuccinimide (NHS) in the presence of the coupling agent N-ethyl-N'-(3-dimethylaminopropyl) carbodiimide (EDC). Subsequently, the enzyme was anchored on the surface via an amidation reaction. The structure of the modified PSi layers was observed by scanning electron microscopy (SEM). The HRP-immobilized electrode was investigated by cyclic voltammetry (CV). The CV results showed that the modified electrode gave rise to well-defined peaks in phosphate buffer, corresponding to the electrochemical redox reaction between HRP-FeIII and HRP-FeII. The obtained electrode also displayed an electrocatalytic reduction behavior towards H2O2.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123214670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997600
F. Lekoui, S. Hassani, M. Ouchabane, M. Hamici
Zinc oxide (ZnO) is a well-known semiconductor material having very interesting physical properties that place it among the most promising materials in different fields; such as optics, photovoltaics, electronics, and gas-detection. ZnO is a transparent conducting oxide that has a natural conductivity and a high transparency in the visible. In this work, we report the deposition ZnO-Ag thin films by thermal evaporation followed by heat treatment. A mixture of ZnO and pure (Ag) w as evaporated under vacuum on glass substrate. The deposited thin films were then annealed at 300 and 500 °C. Ag to increase the conductivity of maintaining the highest possible characterization of the deposited films was added in order ZnO films while transparency. The was carried out by XRD, SEM, Raman and spectrophotometry. The effect of Ag addition to ZnO on mechanical, optical and electrical properties of ZnO is discussed.
{"title":"Optical and mechanical properties of ZnO-Ag films deposited by thermal evaporation","authors":"F. Lekoui, S. Hassani, M. Ouchabane, M. Hamici","doi":"10.1109/NAWDMPV.2014.6997600","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997600","url":null,"abstract":"Zinc oxide (ZnO) is a well-known semiconductor material having very interesting physical properties that place it among the most promising materials in different fields; such as optics, photovoltaics, electronics, and gas-detection. ZnO is a transparent conducting oxide that has a natural conductivity and a high transparency in the visible. In this work, we report the deposition ZnO-Ag thin films by thermal evaporation followed by heat treatment. A mixture of ZnO and pure (Ag) w as evaporated under vacuum on glass substrate. The deposited thin films were then annealed at 300 and 500 °C. Ag to increase the conductivity of maintaining the highest possible characterization of the deposited films was added in order ZnO films while transparency. The was carried out by XRD, SEM, Raman and spectrophotometry. The effect of Ag addition to ZnO on mechanical, optical and electrical properties of ZnO is discussed.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121892135","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997608
A. Lounas, K. Khaldi, N. Gabouze, H. Menari, Nait Bouda
By anisotropic etching, pyramids structured silicon can be prepared using sodium hypochlorite for monocrystalline solar cells. Their influence on the reflectance of the silicon surface was studied to optimize the etching and reduce the optical losses of silicon surface more effectively. However, currently the reflectance of the pyramids structured silicon surface can only be reduced to above 10%in the visible range, which is still too high for high efficiency solar cells. Porous pyramids structured silicon is a promising antireflection coating to solve the problem of high surface reflectance in silicon solar cells. In this paper, a promising method for fabricating porous pyramids compound structure on silicon surface was proposed. The silicon surface was first texturized in NaOCl/C2H5OH and then electrochemically etched in HF/C2H5OH solution. The average reflectance of the surface in the range of 500-900 nm was as low as 5%. The surfaces prepared under optimized condition were investigated by Scanning Electron Microscopy (SEM) and Spectrophotometry.
{"title":"Electrochemical etching of porous-pyramids structure with low reflectance","authors":"A. Lounas, K. Khaldi, N. Gabouze, H. Menari, Nait Bouda","doi":"10.1109/NAWDMPV.2014.6997608","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997608","url":null,"abstract":"By anisotropic etching, pyramids structured silicon can be prepared using sodium hypochlorite for monocrystalline solar cells. Their influence on the reflectance of the silicon surface was studied to optimize the etching and reduce the optical losses of silicon surface more effectively. However, currently the reflectance of the pyramids structured silicon surface can only be reduced to above 10%in the visible range, which is still too high for high efficiency solar cells. Porous pyramids structured silicon is a promising antireflection coating to solve the problem of high surface reflectance in silicon solar cells. In this paper, a promising method for fabricating porous pyramids compound structure on silicon surface was proposed. The silicon surface was first texturized in NaOCl/C2H5OH and then electrochemically etched in HF/C2H5OH solution. The average reflectance of the surface in the range of 500-900 nm was as low as 5%. The surfaces prepared under optimized condition were investigated by Scanning Electron Microscopy (SEM) and Spectrophotometry.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132160176","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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