Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997623
N. Berrouba-Tani, K. Ghaffour
This study deals with the development and optimization of Interdigitated Back Contact (IBC) Silicon Heterojunction(HJ) solar cells based on n-type crystalline silicon (c-Si)substrates. Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J-V curve. Two-dimensional (2D) simulation using “Silvaco-ATLAS” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Two approaches to improve the efficiency are evaluated: (1) modify the contact spacing, (2) reduce the gap region (width between BSF and emitter). The influence of these parameters has been tested by generating the current-voltage (I-V) curves under AM1.5 illumination, and so extract the output characteristics, namely the open circuit voltage (VOC), as well as the short-circuit current density (JSC), the fill factor (FF) and the conversion efficiency η of the cell.
{"title":"Optimization of Interdigitated Back Contact Silicon Heterojunction solar cells (IBC-SiHJ)","authors":"N. Berrouba-Tani, K. Ghaffour","doi":"10.1109/NAWDMPV.2014.6997623","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997623","url":null,"abstract":"This study deals with the development and optimization of Interdigitated Back Contact (IBC) Silicon Heterojunction(HJ) solar cells based on n-type crystalline silicon (c-Si)substrates. Interdigitated back contact silicon heterojunction (IBC-SHJ) solar cells have the potential for high open circuit voltage (VOC) due to the surface passivation and heterojunction contacts, and high short circuit current density (JSC) due to all back contact design. Intrinsic amorphous silicon (a-Si:H) buffer layer at the rear surface improve the surface passivation hence VOC and JSC, but degrade fill factor (FF) from an “S” shape J-V curve. Two-dimensional (2D) simulation using “Silvaco-ATLAS” demonstrates that the low FF is related to the valence band offset (energy barrier) at the hetero-interface. Two approaches to improve the efficiency are evaluated: (1) modify the contact spacing, (2) reduce the gap region (width between BSF and emitter). The influence of these parameters has been tested by generating the current-voltage (I-V) curves under AM1.5 illumination, and so extract the output characteristics, namely the open circuit voltage (VOC), as well as the short-circuit current density (JSC), the fill factor (FF) and the conversion efficiency η of the cell.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120935459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997610
H. Ghembaza, A. Zerga, R. Saim
In this paper, we evaluate the throughput of a low-pressure diffusion tube furnace in order to realize uniform industrial phosphorous emitters p-type silicon solar cells. The low-pressure tube furnace is designed to obtain emitter standard sheet resistances of about 60 ohm/sq and wafer uniformity less than 3 %. POCl3 and O2 gas as a precursor for diffusion is described and the thermal behavior of the so called diffusion furnace is studied. A control model has been derived from some previous works to achieve better wafer to wafer temperature distribution. Our result proves that we can target certain electrical properties only by the manipulation and optimization of doping profile and by the addition of multiple temperature ramps to achieve POCl3 diffusion.
{"title":"Influence of doping profile of high doped emitters on solar cells performances","authors":"H. Ghembaza, A. Zerga, R. Saim","doi":"10.1109/NAWDMPV.2014.6997610","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997610","url":null,"abstract":"In this paper, we evaluate the throughput of a low-pressure diffusion tube furnace in order to realize uniform industrial phosphorous emitters p-type silicon solar cells. The low-pressure tube furnace is designed to obtain emitter standard sheet resistances of about 60 ohm/sq and wafer uniformity less than 3 %. POCl3 and O2 gas as a precursor for diffusion is described and the thermal behavior of the so called diffusion furnace is studied. A control model has been derived from some previous works to achieve better wafer to wafer temperature distribution. Our result proves that we can target certain electrical properties only by the manipulation and optimization of doping profile and by the addition of multiple temperature ramps to achieve POCl3 diffusion.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115803859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997618
I. Malti, N. C. Sari
Organic photovoltaic (PV) devices have opened up a new route for renewable source of electrical energy because of their advantages such as low cost of fabrication and easy processing on flexible substrate. Since Tang in 1986 [1] proposed a two layers organic PV device containing donor and acceptor (D/A) heterojunction to increase power conversion efficiency, significant effort has been made to improve the device performance. The basic equations of an organic solar cell are described in this paper. The dark and illuminated I (V) characteristics are analytically described and PSpice models are introduced firstly the simplest model, composed of a diode, two resistances and a current source. The fundamental electrical parameters of the organic solar cell are defined: short circuit current (Isc), open circuit voltage (Voc), maximum power (Pmax) and fill factor (FF). This model is studied for different ideality factors under different irradiations. The aim of our work is to identify the key parameters of the model to optimize the thick of the different films witch compose the organic polymer solar cell.
{"title":"Electrical simulation of organic solar cell based on CuPc/C60 heterojunctions","authors":"I. Malti, N. C. Sari","doi":"10.1109/NAWDMPV.2014.6997618","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997618","url":null,"abstract":"Organic photovoltaic (PV) devices have opened up a new route for renewable source of electrical energy because of their advantages such as low cost of fabrication and easy processing on flexible substrate. Since Tang in 1986 [1] proposed a two layers organic PV device containing donor and acceptor (D/A) heterojunction to increase power conversion efficiency, significant effort has been made to improve the device performance. The basic equations of an organic solar cell are described in this paper. The dark and illuminated I (V) characteristics are analytically described and PSpice models are introduced firstly the simplest model, composed of a diode, two resistances and a current source. The fundamental electrical parameters of the organic solar cell are defined: short circuit current (Isc), open circuit voltage (Voc), maximum power (Pmax) and fill factor (FF). This model is studied for different ideality factors under different irradiations. The aim of our work is to identify the key parameters of the model to optimize the thick of the different films witch compose the organic polymer solar cell.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114485673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997611
S. Benabbas, H. Heriche, Z. Rouabah, N. Chelali
In this work, we propose a novel structure of solar cell based on copper-indium-gallium-diselenide CuIn1-xGaxSe2 (CIGS) absorber layer by using SCAPS-1D (Solar Cell Capacitance Simulator of the University of Gent). This numerical simulation has been used to explore the possibility of higher efficiency and stable CdS/CIGS cell structures with (ZnO) as window layer, and (CdS) a buffer layer, (CIGS) absorber layer and (SnS) BSF layer. The optimal values to give maximum performance of the structure ZnO/CdS/CIGS/SnS, without and with the BSF layer (SnS), were determined. The study shows potential results for improvement of efficiency of solar cell when using the back surface field (BSF). It was observed that the proposed cell provided conversion efficiency of 25.29% (Voc = 0.79 V, Jsc = 36.43 mA/cm2, FF = 84.83). However the efficiency of cell reference (without BSF) is 17.99% (Voc = 0.62 V, Jsc = 36.03 mA/cm2, FF = 80.23 %).
{"title":"Enhancing the efficiency of CIGS thin film solar cells by inserting novel back surface field (SnS) layer","authors":"S. Benabbas, H. Heriche, Z. Rouabah, N. Chelali","doi":"10.1109/NAWDMPV.2014.6997611","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997611","url":null,"abstract":"In this work, we propose a novel structure of solar cell based on copper-indium-gallium-diselenide CuIn1-xGaxSe2 (CIGS) absorber layer by using SCAPS-1D (Solar Cell Capacitance Simulator of the University of Gent). This numerical simulation has been used to explore the possibility of higher efficiency and stable CdS/CIGS cell structures with (ZnO) as window layer, and (CdS) a buffer layer, (CIGS) absorber layer and (SnS) BSF layer. The optimal values to give maximum performance of the structure ZnO/CdS/CIGS/SnS, without and with the BSF layer (SnS), were determined. The study shows potential results for improvement of efficiency of solar cell when using the back surface field (BSF). It was observed that the proposed cell provided conversion efficiency of 25.29% (Voc = 0.79 V, Jsc = 36.43 mA/cm2, FF = 84.83). However the efficiency of cell reference (without BSF) is 17.99% (Voc = 0.62 V, Jsc = 36.03 mA/cm2, FF = 80.23 %).","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130116368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997606
N. Benmoussa, A. Benichou, N. Medjahdi, K. Rahmoun
The aim of this paper is the study of a capacitive humidity sensor in MEMS technology. It is designed primarily of two armatures; the first one is full, the other is lamellar thus facilitating the passage of water vapor. A layer of dielectric polymer sandwiched between two electrodes absorbs this vapor. The relative permittivity of the dielectric varies with humidity. The study is, in a first step, to determine the static response of the capacitive humidity sensor designed as shown before. In a second step, a finite element simulation using COMSOL software was done to determine the polymer giving a better absorption. Therefore several polymers have been studied. The study showed that the layer made of benzocyclobutene gives better absorption. Another simulation was done to determine the optimal geometric structure also leads to better absorption and a very short response time. The study showed that the structure consists of two electrodes 2 μm wide and spaced 2 μm (called structure2×2) leads to better absorption when it was compared with structures 3×3, 4×4 and 5×5.
{"title":"Modeling and optimization of a capacitive humidity sensor response in MEMS technology","authors":"N. Benmoussa, A. Benichou, N. Medjahdi, K. Rahmoun","doi":"10.1109/NAWDMPV.2014.6997606","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997606","url":null,"abstract":"The aim of this paper is the study of a capacitive humidity sensor in MEMS technology. It is designed primarily of two armatures; the first one is full, the other is lamellar thus facilitating the passage of water vapor. A layer of dielectric polymer sandwiched between two electrodes absorbs this vapor. The relative permittivity of the dielectric varies with humidity. The study is, in a first step, to determine the static response of the capacitive humidity sensor designed as shown before. In a second step, a finite element simulation using COMSOL software was done to determine the polymer giving a better absorption. Therefore several polymers have been studied. The study showed that the layer made of benzocyclobutene gives better absorption. Another simulation was done to determine the optimal geometric structure also leads to better absorption and a very short response time. The study showed that the structure consists of two electrodes 2 μm wide and spaced 2 μm (called structure2×2) leads to better absorption when it was compared with structures 3×3, 4×4 and 5×5.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124374581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997593
M. Belhocine, A. Haouzi, G. Bassou, J. Bantignies, D. Maurin, F. Henn
The objective of this work is to study the effect of interlayer cations on the mechanism of adsorption-desorption of water in the case of a montmorillonite exchanged by alkali metals. This is done through thermodynamic measurements, i.e. isotherms of adsorption and desorption of water. The raw material is subjected to purification treatment by using the sedimentation followed by cationic exchange. IR and XRD analysis of the dry state confirm that the treatment used for obtaining homoionic clays does not deteriorate their structure. The value of the interlayer distance d001obtained from XRD depends directly on the cation radius. IR spectra recorded on our montmorillonite reveals that the area ratio νOH/νSiO peaks which corresponds to the amount of adsorbed water under room atmosphere follows the sequence: K >Rb> Cs > Li > Na In accordance the evolution observed for the desorption enthalpies. The adsorption and desorption isotherms show that the nature of the compensating cation considerably changes the adsorbed / desorbed amount for a given water relative pressure. Thus, the total amount of water adsorbed at P/P0 = 0.5 follows the same sequence.
{"title":"Characterization and dynamic of water in alkali homoionic montmorillonites","authors":"M. Belhocine, A. Haouzi, G. Bassou, J. Bantignies, D. Maurin, F. Henn","doi":"10.1109/NAWDMPV.2014.6997593","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997593","url":null,"abstract":"The objective of this work is to study the effect of interlayer cations on the mechanism of adsorption-desorption of water in the case of a montmorillonite exchanged by alkali metals. This is done through thermodynamic measurements, i.e. isotherms of adsorption and desorption of water. The raw material is subjected to purification treatment by using the sedimentation followed by cationic exchange. IR and XRD analysis of the dry state confirm that the treatment used for obtaining homoionic clays does not deteriorate their structure. The value of the interlayer distance d001obtained from XRD depends directly on the cation radius. IR spectra recorded on our montmorillonite reveals that the area ratio νOH/νSiO peaks which corresponds to the amount of adsorbed water under room atmosphere follows the sequence: K >Rb> Cs > Li > Na In accordance the evolution observed for the desorption enthalpies. The adsorption and desorption isotherms show that the nature of the compensating cation considerably changes the adsorbed / desorbed amount for a given water relative pressure. Thus, the total amount of water adsorbed at P/P0 = 0.5 follows the same sequence.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117196279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-12-29DOI: 10.1109/NAWDMPV.2014.6997616
Z. Allam, A. Hamdoune, A. Soufi, Chahrazed Boudaoud
Development of wide-band gap III-nitride semiconductors has been a subject of intense focus since the 1990s, primarily driven by the quest for blue lasers and high-brightness light-emitting diodes (LEDs). In parallel, III-nitrides have been studied extensively for use in ultraviolet (UV) photodetectors because they offer intrinsic visible- or solar-blind detection, which would eliminate the need for expensive and efficiency-limiting optical filters to remove out-of-band visible or solar photons. Such detectors would be well suited for numerous applications in the defense, commercial, and scientific arenas, including covert space-to-space communications, early missile-threat detection, chemical and biological threat detection and spectroscopy, flame detection and monitoring, UV environmental monitoring, and UV astronomy. In this paper, we considered an AlGaN/GaN photodetector grown on sapphire substrate. We studied I-V characteristics and we simulated the current as a function of voltage in darkness; we got a dark current of order 10-7 for a concentration of 1e19 cm-3. In the spectral response, we obtained a high current and flux spectral density for a wavelength of 350 nm for different x.
{"title":"High-performance solar-blind photodetector based on AlGaN/GaN heterostructure","authors":"Z. Allam, A. Hamdoune, A. Soufi, Chahrazed Boudaoud","doi":"10.1109/NAWDMPV.2014.6997616","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997616","url":null,"abstract":"Development of wide-band gap III-nitride semiconductors has been a subject of intense focus since the 1990s, primarily driven by the quest for blue lasers and high-brightness light-emitting diodes (LEDs). In parallel, III-nitrides have been studied extensively for use in ultraviolet (UV) photodetectors because they offer intrinsic visible- or solar-blind detection, which would eliminate the need for expensive and efficiency-limiting optical filters to remove out-of-band visible or solar photons. Such detectors would be well suited for numerous applications in the defense, commercial, and scientific arenas, including covert space-to-space communications, early missile-threat detection, chemical and biological threat detection and spectroscopy, flame detection and monitoring, UV environmental monitoring, and UV astronomy. In this paper, we considered an AlGaN/GaN photodetector grown on sapphire substrate. We studied I-V characteristics and we simulated the current as a function of voltage in darkness; we got a dark current of order 10-7 for a concentration of 1e19 cm-3. In the spectral response, we obtained a high current and flux spectral density for a wavelength of 350 nm for different x.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-12-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128919727","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/NAWDMPV.2014.6997615
A. Amrani, R. Saim
Two techniques are described in this paper to analyze the dynamic and thermal behavior of a stationary air flow of forced convection in a solar collector with a perforated absorber. These perforations are vertical (plate 1) and inclined (plate inc) to the wall of insulation. Two absorber plates were used to determine the effect of absorber plate porosity as well as injection air flow rate on the collector thermal efficiency. The profiles of axial and radial velocity, velocity fields, temperature then a comparative study of the two absorber plates have been investigated.
{"title":"Numerical study on effect of mass flow rate and porosity on the thermal performance in the solar sensor with porous absorber","authors":"A. Amrani, R. Saim","doi":"10.1109/NAWDMPV.2014.6997615","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997615","url":null,"abstract":"Two techniques are described in this paper to analyze the dynamic and thermal behavior of a stationary air flow of forced convection in a solar collector with a perforated absorber. These perforations are vertical (plate 1) and inclined (plate inc) to the wall of insulation. Two absorber plates were used to determine the effect of absorber plate porosity as well as injection air flow rate on the collector thermal efficiency. The profiles of axial and radial velocity, velocity fields, temperature then a comparative study of the two absorber plates have been investigated.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117135852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/NAWDMPV.2014.6997622
N. Madini, K. Rahmoun, M. Côté
Intense solar radiation and arid region in Algeria should be a promising issue to upgrade eco-friendly energy source alternative and promote climate change lute. For this purpose, we propose first principle investigation of the structural and the electronic bulk properties of the promising GaAsN alloy in delta-layer configuration within the aid of density functional theory framework. The simulation has been done to estimate the adequacy of this quantum design for optoelectronic and high efficiency photovoltaic applications. We particularly predict the evolution of the δ-layered GanAs1-nN1 lattice constant for x=1/n in the range of 0<;x≤1. Our approach exhibits excellent concordance in structural properties and electronic structure within the experimental data for the parent binaries GaAs and GaN. The calculations show that GaAsN should be lattice matched to panoply of solicited semi-conductors for photovoltaic technologies such as GaAs, GaAlAs, Ge and Si. Moreover, the electronic structure and the band gap calculation of the chosen concentration x=1/10 predict that delta-layer design of GaAsN could be an interesting issue for telecommunication devices dedicated to transmission over optical fiber and it should be good absorber material for high efficiency solar cells power conversion by joining a band gap energies suitable with the most intense solar spectrum.
{"title":"GaAs-δ layered within nitrogen for high efficiency photovoltaic devices: First principle prediction","authors":"N. Madini, K. Rahmoun, M. Côté","doi":"10.1109/NAWDMPV.2014.6997622","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997622","url":null,"abstract":"Intense solar radiation and arid region in Algeria should be a promising issue to upgrade eco-friendly energy source alternative and promote climate change lute. For this purpose, we propose first principle investigation of the structural and the electronic bulk properties of the promising GaAsN alloy in delta-layer configuration within the aid of density functional theory framework. The simulation has been done to estimate the adequacy of this quantum design for optoelectronic and high efficiency photovoltaic applications. We particularly predict the evolution of the δ-layered GanAs1-nN1 lattice constant for x=1/n in the range of 0<;x≤1. Our approach exhibits excellent concordance in structural properties and electronic structure within the experimental data for the parent binaries GaAs and GaN. The calculations show that GaAsN should be lattice matched to panoply of solicited semi-conductors for photovoltaic technologies such as GaAs, GaAlAs, Ge and Si. Moreover, the electronic structure and the band gap calculation of the chosen concentration x=1/10 predict that delta-layer design of GaAsN could be an interesting issue for telecommunication devices dedicated to transmission over optical fiber and it should be good absorber material for high efficiency solar cells power conversion by joining a band gap energies suitable with the most intense solar spectrum.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129183891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-01DOI: 10.1109/NAWDMPV.2014.6997617
N. B. Khelladi, N. C. Sari
In this work studied the optical properties of ZnO thin films prepared by sol gel spin coating process. A sol has been prepared by reacting Zinc acetate dihydrate and ethylene glycol and dissolving the resultant transparent brittle solid in dry n- propanol. Our thin films with different thickness were prepared by sol-gel method on glass substrates. Optical properties of these films were studied by UV-visible spectrophotometer at 200-800 nm wavelength. The extinction coefficient and band gap were calculated from the transmission spectrum. The analyses show that with the increase of film thickness, both the ultraviolet emission intensity is improved. However, the transmittance in the visible range is hardly influenced by the film thickness, and the averages are all above 80%.
{"title":"Optical properties of ZnO thin films prepared by Sol- gel method","authors":"N. B. Khelladi, N. C. Sari","doi":"10.1109/NAWDMPV.2014.6997617","DOIUrl":"https://doi.org/10.1109/NAWDMPV.2014.6997617","url":null,"abstract":"In this work studied the optical properties of ZnO thin films prepared by sol gel spin coating process. A sol has been prepared by reacting Zinc acetate dihydrate and ethylene glycol and dissolving the resultant transparent brittle solid in dry n- propanol. Our thin films with different thickness were prepared by sol-gel method on glass substrates. Optical properties of these films were studied by UV-visible spectrophotometer at 200-800 nm wavelength. The extinction coefficient and band gap were calculated from the transmission spectrum. The analyses show that with the increase of film thickness, both the ultraviolet emission intensity is improved. However, the transmittance in the visible range is hardly influenced by the film thickness, and the averages are all above 80%.","PeriodicalId":149945,"journal":{"name":"2014 North African Workshop on Dielectic Materials for Photovoltaic Systems (NAWDMPV)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2014-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127563237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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