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2021 IEEE 17th International Conference on Group IV Photonics (GFP)最新文献

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A Compact, Low-Drive-Voltage Mach-Zehnder Modulator Using Serially-Coupled Rings 一个紧凑的,低驱动电压马赫-曾德调制器使用串行耦合环
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673938
Aroutin Khachaturian, P. Khial, A. Hajimiri
A novel, low-drive-voltage, and compact modulator using serially-coupled ring resonators in a Mach-Zehnder interferometer (MZI) linearly reduces the modulator’s energy consumption as the number of rings in the chain increases. Such an MZI with three serially-coupled rings is invested for typical silicon photonics platforms.
在Mach-Zehnder干涉仪(MZI)中使用串行耦合环形谐振器的新型低驱动电压紧凑型调制器随着链中环数的增加而线性降低了调制器的能量消耗。针对典型的硅光子学平台,设计了具有三串耦合环的MZI。
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引用次数: 0
Broadband and Compact Polarization Splitter-Rotator Based on Subwavelength-Grating-Slot-Assisted Adiabatic Coupler for the Silicon-on-Insulator Platform 基于亚波长光栅槽辅助绝热耦合器的宽带紧凑型偏振分束旋转器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9674006
Luhua Xu
We propose a broadband and compact polarization splitter-rotator based on subwavelength-grating-slot-assisted adiabatic coupler for the silicon-on-insulator platform. Simulated crosstalk below -18.6 dB and insertion loss below 0.49 dB over a 100 nm bandwidth is achieved with a sub-100-µm device length.
我们提出了一种基于亚波长光栅槽辅助绝热耦合器的宽带紧凑型偏振分裂旋转器,用于绝缘体上硅平台。在100 nm带宽下,模拟串扰低于-18.6 dB,插入损耗低于0.49 dB,器件长度低于100µm。
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引用次数: 0
Laser sintering of polycrystalline Ge-Sn films 多晶锗锡薄膜的激光烧结
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673991
Md. Toriqul Islam, M. Gupta
A laser sintering fabrication process to deposit 3 µm thick GeSn films on silicon substrates has been demonstrated. A 2% tin was incorporated in germanium to increase p-type mobility. High hole mobility of 166.2 cm2/v.s was achieved for laser-sintered polycrystalline GeSn films.
研究了在硅衬底上沉积3µm厚GeSn薄膜的激光烧结工艺。在锗中加入2%锡以提高p型迁移率。高空穴迁移率为166.2 cm2/v。激光烧结的多晶GeSn薄膜得到了s。
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引用次数: 0
Dynamic Compensation of Nonlinear Phenomena in Silicon Photonic Microring Resonator Filter 硅光子微环谐振器滤波器非线性现象的动态补偿
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9674014
M. Petrini, M. Milanizadeh, F. Morichetti, A. Melloni
We propose an approach to actively mitigate spectral distortions induced by nonlinear phenomena in microring resonator silicon photonic filters. The benefit of this scheme has been evaluated through transmission assessments, performed for 200 Gbit/s DP 16-QAM signals, up to 20 dBm.
我们提出了一种主动缓解微环谐振腔硅光子滤波器中非线性现象引起的光谱畸变的方法。通过对最大20dbm的200gbit /s DP 16-QAM信号进行传输评估,对该方案的优点进行了评估。
{"title":"Dynamic Compensation of Nonlinear Phenomena in Silicon Photonic Microring Resonator Filter","authors":"M. Petrini, M. Milanizadeh, F. Morichetti, A. Melloni","doi":"10.1109/GFP51802.2021.9674014","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9674014","url":null,"abstract":"We propose an approach to actively mitigate spectral distortions induced by nonlinear phenomena in microring resonator silicon photonic filters. The benefit of this scheme has been evaluated through transmission assessments, performed for 200 Gbit/s DP 16-QAM signals, up to 20 dBm.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122633665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Silicon-Germanium Heterojunction Photodetectors for On-Chip Optoelectronics and Communications 片上光电子和通信用硅锗异质结光电探测器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673940
D. Benedikovic, L. Virot, G. Aubin, J. Hartmann, F. Amar, X. Le roux, C. Alonso‐Ramos, D. Marris-Morini, E. Cassan, F. Boeuf, J. Fédéli, B. Szelag, L. Vivien
Optical photodetectors are at the forefront of integrated photonics research as fundamental building blocks for optoelectronic systems and communication links. However, chip-integrated photodetectors with improved performances constitute on-going challenges for such applications. We present recent progress in high-speed silicon-germanium photodetectors fabricated on silicon-foundry-compatible platforms.
光学光电探测器作为光电系统和通信链路的基本组成部分,处于集成光子学研究的前沿。然而,具有改进性能的芯片集成光电探测器对此类应用构成了持续的挑战。我们介绍了在硅铸造厂兼容平台上制造的高速硅锗光电探测器的最新进展。
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引用次数: 1
Crosstalk Suppression in Adiabatic 2x2 Couplers via Device Perturbative Reshaping 基于器件微扰整形的绝热2x2耦合器串扰抑制
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673853
D. Siriani, J. Tambasco
The Crosstalk Elimination via Perturbative Reshaping (CEPR) design method is introduced to ensure low modal crosstalk in adiabatic devices. It is applied to design a 2x2 coupler that experimentally achieves 50±1% split ratio and <0.1 dB loss over a 100 nm span in the O-band.
为了保证绝热器件的低模态串扰,提出了通过微扰重塑消除串扰的设计方法。应用该方法设计了一个2 × 2的耦合器,在o波段的100 nm范围内实现了50±1%的劈裂比和<0.1 dB的损耗。
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引用次数: 0
Photonic Wire Bonding for Silicon Photonics III-V Laser Integration 硅光子学III-V激光集成中的光子线键合
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673842
Matthew Mitchell, B. Lin, I. Taghavi, Shangxuan Yu, Donald Witt, Kashif M. Awan, S. Gou, Jeff Young, L. Chrostowski
Photonic wire bonding offers the opportunity to co-package lasers and silicon chips, solving a long-standing problem in integrated photonics, and enabling foundries to offer multi-project wafer runs featuring integrated lasers.
光子线键合为激光器和硅芯片的共封装提供了机会,解决了集成光子学中长期存在的问题,并使代工厂能够提供具有集成激光器的多项目晶圆运行。
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引用次数: 2
Ge/Si electrically tunable VIS/SWIR photodetector Ge/Si电调谐VIS/SWIR光电探测器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673998
A. Ballabio, A. De Iacovo, J. Frigerio, Andrea Fabbri, G. Isella, L. Colace
We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.
我们报道了在Si p-n结上生长的外延Ge-on-Si双带光电探测器,形成两个背靠背连接的光电二极管。该器件的响应性可以通过外部偏置进行调谐,以覆盖可见光和近红外光谱区域内的波长。
{"title":"Ge/Si electrically tunable VIS/SWIR photodetector","authors":"A. Ballabio, A. De Iacovo, J. Frigerio, Andrea Fabbri, G. Isella, L. Colace","doi":"10.1109/GFP51802.2021.9673998","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673998","url":null,"abstract":"We report on an epitaxial Ge-on-Si dual-band photodetector grown on a Si p-n junction, to form two photodiodes connected in a back-to-back configuration. The device responsivity can be tuned, with an external bias, to cover wavelengths within the visible and near-infrared spectral regions.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133538661","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-performance hybrid silicon and lithium niobate modulators 高性能混合硅和铌酸锂调制器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673873
Xinlun Cai
Hybrid silicon and lithium niobate platform is promising to extend the electrooptic performance beyond the limits of the physical properties of silicon. In this paper, we review and discuss the hybrid Si/LN modulators from the point of optical loss, drive voltage, modulation bandwidth, and size.
混合硅与铌酸锂平台有望将电光性能扩展到硅的物理性能极限之外。本文从光损耗、驱动电压、调制带宽和尺寸等方面对硅/LN混合调制器进行了综述和讨论。
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引用次数: 0
Silicon nitride CMOS platform for integrated optical phased arrays applications 集成光学相控阵应用的氮化硅CMOS平台
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673980
S. Ilie, P. Ginel-Moreno, J. Sagar, T. D. Bucio, A. Ortega-Moñux, K. Lekkas, T. Rutirawut, L. Mastronardi, I. Skandalos, K. Grabska, Í. Molina-Fernández, G. Kanellos, P. Cheben, F. Gardes
We demonstrate devices and architectures enabling applications such as light detection and ranging (LiDAR) and optical switches, including dispersive optical phased array (OPA) architectures, a hybrid silicon nitride - lithium niobate on insulator (SiN - LNOI) optical phase modulator, and scalable architectures for optical switches.
我们展示了支持光探测和测距(LiDAR)和光开关等应用的器件和架构,包括色散光学相控阵(OPA)架构,氮化硅-铌酸锂绝缘体(SiN - LNOI)混合光相位调制器,以及用于光开关的可扩展架构。
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引用次数: 1
期刊
2021 IEEE 17th International Conference on Group IV Photonics (GFP)
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