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2021 IEEE 17th International Conference on Group IV Photonics (GFP)最新文献

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A Compact, Low-Drive-Voltage Mach-Zehnder Modulator Using Serially-Coupled Rings 一个紧凑的,低驱动电压马赫-曾德调制器使用串行耦合环
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673938
Aroutin Khachaturian, P. Khial, A. Hajimiri
A novel, low-drive-voltage, and compact modulator using serially-coupled ring resonators in a Mach-Zehnder interferometer (MZI) linearly reduces the modulator’s energy consumption as the number of rings in the chain increases. Such an MZI with three serially-coupled rings is invested for typical silicon photonics platforms.
在Mach-Zehnder干涉仪(MZI)中使用串行耦合环形谐振器的新型低驱动电压紧凑型调制器随着链中环数的增加而线性降低了调制器的能量消耗。针对典型的硅光子学平台,设计了具有三串耦合环的MZI。
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引用次数: 0
Broadband and Compact Polarization Splitter-Rotator Based on Subwavelength-Grating-Slot-Assisted Adiabatic Coupler for the Silicon-on-Insulator Platform 基于亚波长光栅槽辅助绝热耦合器的宽带紧凑型偏振分束旋转器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9674006
Luhua Xu
We propose a broadband and compact polarization splitter-rotator based on subwavelength-grating-slot-assisted adiabatic coupler for the silicon-on-insulator platform. Simulated crosstalk below -18.6 dB and insertion loss below 0.49 dB over a 100 nm bandwidth is achieved with a sub-100-µm device length.
我们提出了一种基于亚波长光栅槽辅助绝热耦合器的宽带紧凑型偏振分裂旋转器,用于绝缘体上硅平台。在100 nm带宽下,模拟串扰低于-18.6 dB,插入损耗低于0.49 dB,器件长度低于100µm。
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引用次数: 0
Laser sintering of polycrystalline Ge-Sn films 多晶锗锡薄膜的激光烧结
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673991
Md. Toriqul Islam, M. Gupta
A laser sintering fabrication process to deposit 3 µm thick GeSn films on silicon substrates has been demonstrated. A 2% tin was incorporated in germanium to increase p-type mobility. High hole mobility of 166.2 cm2/v.s was achieved for laser-sintered polycrystalline GeSn films.
研究了在硅衬底上沉积3µm厚GeSn薄膜的激光烧结工艺。在锗中加入2%锡以提高p型迁移率。高空穴迁移率为166.2 cm2/v。激光烧结的多晶GeSn薄膜得到了s。
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引用次数: 0
Dynamic Compensation of Nonlinear Phenomena in Silicon Photonic Microring Resonator Filter 硅光子微环谐振器滤波器非线性现象的动态补偿
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9674014
M. Petrini, M. Milanizadeh, F. Morichetti, A. Melloni
We propose an approach to actively mitigate spectral distortions induced by nonlinear phenomena in microring resonator silicon photonic filters. The benefit of this scheme has been evaluated through transmission assessments, performed for 200 Gbit/s DP 16-QAM signals, up to 20 dBm.
我们提出了一种主动缓解微环谐振腔硅光子滤波器中非线性现象引起的光谱畸变的方法。通过对最大20dbm的200gbit /s DP 16-QAM信号进行传输评估,对该方案的优点进行了评估。
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引用次数: 0
Silicon-Germanium Heterojunction Photodetectors for On-Chip Optoelectronics and Communications 片上光电子和通信用硅锗异质结光电探测器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673940
D. Benedikovic, L. Virot, G. Aubin, J. Hartmann, F. Amar, X. Le roux, C. Alonso‐Ramos, D. Marris-Morini, E. Cassan, F. Boeuf, J. Fédéli, B. Szelag, L. Vivien
Optical photodetectors are at the forefront of integrated photonics research as fundamental building blocks for optoelectronic systems and communication links. However, chip-integrated photodetectors with improved performances constitute on-going challenges for such applications. We present recent progress in high-speed silicon-germanium photodetectors fabricated on silicon-foundry-compatible platforms.
光学光电探测器作为光电系统和通信链路的基本组成部分,处于集成光子学研究的前沿。然而,具有改进性能的芯片集成光电探测器对此类应用构成了持续的挑战。我们介绍了在硅铸造厂兼容平台上制造的高速硅锗光电探测器的最新进展。
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引用次数: 1
Crosstalk Suppression in Adiabatic 2x2 Couplers via Device Perturbative Reshaping 基于器件微扰整形的绝热2x2耦合器串扰抑制
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673853
D. Siriani, J. Tambasco
The Crosstalk Elimination via Perturbative Reshaping (CEPR) design method is introduced to ensure low modal crosstalk in adiabatic devices. It is applied to design a 2x2 coupler that experimentally achieves 50±1% split ratio and <0.1 dB loss over a 100 nm span in the O-band.
为了保证绝热器件的低模态串扰,提出了通过微扰重塑消除串扰的设计方法。应用该方法设计了一个2 × 2的耦合器,在o波段的100 nm范围内实现了50±1%的劈裂比和<0.1 dB的损耗。
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引用次数: 0
Modelling of thermal effects in InP-on-Si nanocavity lasers InP-on-Si纳米腔激光器热效应的建模
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673942
P. Wen, P. Tiwari, B. Gotsmann, K. Moselund
We modelled thermal effects in InP-on-Si nanocavity lasers with various pumping strategies. The highest temperature under uniform pumping increases linearly with diameter while it shows a maximum under Gaussian distributed pumping. Transient results show both pulse width and period play important role in thermal effects.
我们模拟了不同泵浦策略下InP-on-Si纳米腔激光器的热效应。均匀泵送时最高温度随直径线性增加,高斯分布泵送时最高温度随直径线性增加。瞬态结果表明,脉冲宽度和周期对热效应有重要影响。
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引用次数: 1
Silicon-based broadband metalens for wide-angle optical beam steering 用于广角光束导向的硅基宽带超透镜
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9674021
Yang Liu, X. Roux, E. Cassan, D. Marris-Morini, L. Vivien, C. Alonso‐Ramos, D. Melati
We report on the design of an achromatic metalens at optical communication wavelengths implementing a quadratic phase profile. Beam collimation and steering over a wide field of view of ±40° is achieved. Moreover, wavelength-independent focusing is demonstrated over a 100 nm wavelength range.
我们报道了在光通信波长实现二次相位轮廓的消色差超构透镜的设计。光束准直和转向在±40°的宽视场是实现的。此外,在100 nm波长范围内证明了波长无关聚焦。
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引用次数: 3
Broadband mid-infrared integrated electro-optic modulator based on a Schottky diode embedded in a graded SiGe waveguide 基于肖特基二极管嵌入梯度SiGe波导的宽带中红外集成电光调制器
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9674022
M. Montesinos-Ballester, L. Deniel, Natnicha Koompai, T. Nguyen, J. Frigerio, A. Ballabio, V. Falcone, X. Roux, C. Alonso‐Ramos, L. Vivien, A. Bousseksou, G. Isella, D. Marris-Morini
We present an integrated electro-optical modulator based on a Schottky diode embedded in a graded-index SiGe waveguide, operating in a wide mid-IR range from 6.4 to 10.7 µm wavelength. A 1.3 dB absorption variation is reported, which is already compatible with onchip synchronous detection experiments.
我们提出了一种集成电光调制器,该调制器基于嵌入在渐变折射率SiGe波导中的肖特基二极管,工作在6.4至10.7 μ m波长的宽中红外范围内。报道了1.3 dB的吸收变化,这已经与片上同步检测实验兼容。
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引用次数: 0
High Q, Compact Photonic Crystal Nanobeam Cavity for an Active Device Platform in a CMOS Silicon Photonics Process 用于CMOS硅光子学工艺有源器件平台的高Q、紧凑光子晶体纳米束腔
Pub Date : 2021-12-01 DOI: 10.1109/GFP51802.2021.9673876
K. A. Qubaisi, M. Popović
We demonstrate a high Q, compact photonic crystal nanobeam cavity in the new 45 nm GlobalFoundries 45CLO monolithic electronics-photonics platform optimized for silicon photonics - with an intrinsic Q of 134,000, FSR of 24.17 nm, and a theoretical Q/V of 2.2×105(λ/n)-3.
我们在新的45nm GlobalFoundries 45CLO单片电子光子学平台上展示了高Q,紧凑的光子晶体纳米束腔,该平台针对硅光子学进行了优化,其固有Q为134,000,FSR为24.17 nm,理论Q/V为2.2×105(λ/n)-3。
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引用次数: 1
期刊
2021 IEEE 17th International Conference on Group IV Photonics (GFP)
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