Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673952
Youngkwan Jo, Yongjin Ji, Minkyu Kim, S. Lischke, C. Mai, L. Zimmermann, W. Choi
Monte-Carlo characterization based on the Si ring modulator equivalent circuit is performed for the modulation frequency responses based on experimentally determined key behavior model parameter distributions. Such Montel-Carlo characterization allows prediction of the statistical distribution of the performance metrics for Si photonic integrated circuit design.
{"title":"Parametric Monte-Carlo Characterization of Si Ring Modulators","authors":"Youngkwan Jo, Yongjin Ji, Minkyu Kim, S. Lischke, C. Mai, L. Zimmermann, W. Choi","doi":"10.1109/GFP51802.2021.9673952","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673952","url":null,"abstract":"Monte-Carlo characterization based on the Si ring modulator equivalent circuit is performed for the modulation frequency responses based on experimentally determined key behavior model parameter distributions. Such Montel-Carlo characterization allows prediction of the statistical distribution of the performance metrics for Si photonic integrated circuit design.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132994121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673831
K. M. Kiani, Dawson B. Bonneville, A. Knights, J. Bradley
We present the design and experimental measurement of high-Q-factor on-chip tellurium-oxide-coated silicon microring resonators with internal Q factors of up to 1.5 × 106, corresponding to 0.4 dB/cm waveguide loss, at wavelengths around 1550 nm.
{"title":"High-Q-factor tellurium oxide clad silicon microring resonators","authors":"K. M. Kiani, Dawson B. Bonneville, A. Knights, J. Bradley","doi":"10.1109/GFP51802.2021.9673831","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673831","url":null,"abstract":"We present the design and experimental measurement of high-Q-factor on-chip tellurium-oxide-coated silicon microring resonators with internal Q factors of up to 1.5 × 106, corresponding to 0.4 dB/cm waveguide loss, at wavelengths around 1550 nm.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"24 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133540923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673808
P. N. Ruano, J. Zhang, D. Melati, X. Roux, E. Cassan, D. Marris-Morini, L. Vivien, N. Lanzillotti-Kimura, C. Alonso Ramos
Brillouin optomechanics has a great potential for applications in communications and sensing. Here, we propose a new strategy to optimize Brillouin gain in silicon waveguides. We exploit optomechanic subwavelength engineering and multi-physics genetic optimization to achieve a Brillouin gain of 3300 W−1m−1 at 14.79 GHz.
{"title":"Genetic optimisation of Brillouin gain in subwavelength-structured silicon membranes","authors":"P. N. Ruano, J. Zhang, D. Melati, X. Roux, E. Cassan, D. Marris-Morini, L. Vivien, N. Lanzillotti-Kimura, C. Alonso Ramos","doi":"10.1109/GFP51802.2021.9673808","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673808","url":null,"abstract":"Brillouin optomechanics has a great potential for applications in communications and sensing. Here, we propose a new strategy to optimize Brillouin gain in silicon waveguides. We exploit optomechanic subwavelength engineering and multi-physics genetic optimization to achieve a Brillouin gain of 3300 W−1m−1 at 14.79 GHz.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122213227","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673975
Ranjeet Kumar, Duanni Huang, M. Sakib, G. Su, Chaoxuan Ma, Xinru Wu, H. Rong
We demonstrate a four-wavelength DFB laser with 140 GHz wavelength spacing, 8.0 dBm/wavelength output power, <-140 dB/Hz RIN, and <300 kHz linewidth. We achieved >13 dBm/wavelength fiber coupled power with an amplifier. The wavelength spacing and power variations are <±5 GHz and <±0.8 dB, respectively.
{"title":"A multi-wavelength III-V/Si hybrid DFB laser with even wavelength spacing and uniform output power","authors":"Ranjeet Kumar, Duanni Huang, M. Sakib, G. Su, Chaoxuan Ma, Xinru Wu, H. Rong","doi":"10.1109/GFP51802.2021.9673975","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673975","url":null,"abstract":"We demonstrate a four-wavelength DFB laser with 140 GHz wavelength spacing, 8.0 dBm/wavelength output power, <-140 dB/Hz RIN, and <300 kHz linewidth. We achieved >13 dBm/wavelength fiber coupled power with an amplifier. The wavelength spacing and power variations are <±5 GHz and <±0.8 dB, respectively.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127936018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673924
Takanori Sato, T. Fujisawa, Takuya Mitarai, T. Hiratani, T. Okimoto, T. Ishikawa, N. Kono, Naoki Fujiwara, H. Yagi, K. Saitoh
A Si wavelength filter using face-to-face loop mirrors is newly proposed. It has two resonant modes that can be excited from different access ports. By using it as an external resonator in III-V/Si hybrid lasers, the resonant characteristics in each filter can be directly monitored.
{"title":"Design of Resonant-Characteristics-Monitorable Si Wavelength Filter Using Face-To-Face Loop Mirrors For Heterogeneous Integrated Tunable Lasers","authors":"Takanori Sato, T. Fujisawa, Takuya Mitarai, T. Hiratani, T. Okimoto, T. Ishikawa, N. Kono, Naoki Fujiwara, H. Yagi, K. Saitoh","doi":"10.1109/GFP51802.2021.9673924","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673924","url":null,"abstract":"A Si wavelength filter using face-to-face loop mirrors is newly proposed. It has two resonant modes that can be excited from different access ports. By using it as an external resonator in III-V/Si hybrid lasers, the resonant characteristics in each filter can be directly monitored.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":" 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120937424","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673858
L. Reid, M. Nedeljkovic, W. Cao, L. Mastronardi, R. Slavík, G. Mashanovich
Ge-on-SOI waveguide integrated photodiodes are demonstrated with a high responsivity of 0.1 A/W at a wavelength of 3.8 µm at room temperature. This is the first example of photodetection at 3.8 µm on an intrinsic germanium integrated detector.
在室温下，Ge-on-SOI波导集成光电二极管在3.8µm波长下具有0.1 a /W的高响应度。这是在本征锗集成探测器上进行3.8µm光探测的第一个例子。
{"title":"Photodetection at 3.8 µm Using Intrinsic Monolithic Integrated Germanium Photodiodes","authors":"L. Reid, M. Nedeljkovic, W. Cao, L. Mastronardi, R. Slavík, G. Mashanovich","doi":"10.1109/GFP51802.2021.9673858","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673858","url":null,"abstract":"Ge-on-SOI waveguide integrated photodiodes are demonstrated with a high responsivity of 0.1 A/W at a wavelength of 3.8 µm at room temperature. This is the first example of photodetection at 3.8 µm on an intrinsic germanium integrated detector.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"14 6 Pt 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131525323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673918
Christian De Vita, M. Asa, M. Urquia, M. E. Castagna, C. Somaschini, F. Morichetti, A. Melloni
An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.
{"title":"ZnS antireflection coating for Silicon for MIR - LWIR applications","authors":"Christian De Vita, M. Asa, M. Urquia, M. E. Castagna, C. Somaschini, F. Morichetti, A. Melloni","doi":"10.1109/GFP51802.2021.9673918","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673918","url":null,"abstract":"An antireflection coating (ARC) for silicon devices operating at 10 μm has been designed, fabricated and validated. The ARC is based on ZnS and Al2O3 and is deposited at room temperature. Both single and double side ARCs are considered, demonstrating a transmission enhancement respectively of 66% and 89% with respect to an uncoated silicon device.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117017581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673841
E. Postelnicu, S. Marzen, Rui‐Tao Wen, D. Ma, Baoming Wang, K. Wada, J. Michel, L. Kimerling
We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al2O3 deposition at 250C removes all peripheral leakage components. These processes yield a mean value of Jd = 160nA/cm2 at -1V.
我们研究了425-800C生长后退火和ALD表面钝化对gan - si p-i-n光电二极管暗电流的影响。在250℃下通过Al2O3沉积的侧壁钝化去除所有外围泄漏成分。这些过程在-1V时产生Jd = 160nA/cm2的平均值。
{"title":"Engineering Low Dark Current Density for Ge-on-Si Photodiodes","authors":"E. Postelnicu, S. Marzen, Rui‐Tao Wen, D. Ma, Baoming Wang, K. Wada, J. Michel, L. Kimerling","doi":"10.1109/GFP51802.2021.9673841","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673841","url":null,"abstract":"We have studied the roles of 425-800C post-growth annealing and ALD surface passivation on the dark current of Geon-Si p-i-n photodiodes. Sidewall passivation via Al<inf>2</inf>O<inf>3</inf> deposition at 250C removes all peripheral leakage components. These processes yield a mean value of J<inf>d</inf> = 160nA/cm<sup>2</sup> at -1V.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128701129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673939
M. Oehme, M. Kaschel, M. Wanitzek, Steffen Epple, Xin Zhou, Zili Yu, D. Schwarz, J. Burghartz, J. Schulze
A Ge-on-Si camera for NIR detection with backside illumination, is presented. A 10x10 pixel array is controlled with a readout chip and a microcontroller, which is connected via USB. A linear behavior between digital output and optical power over a large dynamic range is shown.
{"title":"Ge-on-Si camera for NIR detection","authors":"M. Oehme, M. Kaschel, M. Wanitzek, Steffen Epple, Xin Zhou, Zili Yu, D. Schwarz, J. Burghartz, J. Schulze","doi":"10.1109/GFP51802.2021.9673939","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673939","url":null,"abstract":"A Ge-on-Si camera for NIR detection with backside illumination, is presented. A 10x10 pixel array is controlled with a readout chip and a microcontroller, which is connected via USB. A linear behavior between digital output and optical power over a large dynamic range is shown.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124444291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-01DOI: 10.1109/GFP51802.2021.9673954
E. Díaz-Escobar, Á. Barreda, L. Mercadé, A. Griol, A. Martínez
In this work, we study a 1D silicon photonic formed by a set of silicon nanobricks, which supports a Bragg photonic bandgap (PBG) for TE-like polarization. We show that the Bragg PBG can vanish because of the interplay between the electric and magnetic dipole of its constituent silicon nanobricks.
{"title":"Bandgap closure in 1D photonic crystals from interplay between Mie resonances","authors":"E. Díaz-Escobar, Á. Barreda, L. Mercadé, A. Griol, A. Martínez","doi":"10.1109/GFP51802.2021.9673954","DOIUrl":"https://doi.org/10.1109/GFP51802.2021.9673954","url":null,"abstract":"In this work, we study a 1D silicon photonic formed by a set of silicon nanobricks, which supports a Bragg photonic bandgap (PBG) for TE-like polarization. We show that the Bragg PBG can vanish because of the interplay between the electric and magnetic dipole of its constituent silicon nanobricks.","PeriodicalId":158770,"journal":{"name":"2021 IEEE 17th International Conference on Group IV Photonics (GFP)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2021-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126239984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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