Pub Date : 2023-05-20DOI: 10.1080/15980316.2023.2213848
Jung Chul Kim, I. S. Lee, Hyung Tae Kim, Jongyeop An, Jae Sung Kim, Juhn‐Suk Yoo, H. Hwang, Hyun Chul Choi, Yong‐Min Ha, Hyun Jae Kim
This paper proposes a novel pixel circuit and driving scheme that adopts low-temperature polycrystalline silicon and oxide thin-film transistors (LTPO TFTs) for mobile devices using active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit and driving scheme provide uniform luminance and render flicker invisible at variable refresh rates (VRRs) from 1 to 120 Hz. Using the proposed pixel circuit with extended compensation time (tCOMP) improves the luminance uniformity at a high-frame rate. The proposed driving scheme applies a voltage to the driving TFTs (D-TFTs) higher than the programmed data voltage during the skip frame. This reduces the flicker caused by the hysteresis of D-TFTs during low-frame rate driving. A 6.0-inch quad high-definition (QHD) LTPO-based AMOLED display was fabricated using the new pixel circuit and driving scheme. Experimental results of the proposed pixel circuit show that the standard deviation of luminance was reduced from 0.056 to 0.008 by extending tCOMP from 2 to 8 µs. The flicker level was −51 dB, so there was no visual artifact during 1 Hz driving. A flicker-free LTPO-based AMOLED display with low power consumption is possible; driving can proceed in 1–120 Hz range.
{"title":"A novel LTPO AMOLED pixel circuit and driving scheme for variable refresh rate","authors":"Jung Chul Kim, I. S. Lee, Hyung Tae Kim, Jongyeop An, Jae Sung Kim, Juhn‐Suk Yoo, H. Hwang, Hyun Chul Choi, Yong‐Min Ha, Hyun Jae Kim","doi":"10.1080/15980316.2023.2213848","DOIUrl":"https://doi.org/10.1080/15980316.2023.2213848","url":null,"abstract":"This paper proposes a novel pixel circuit and driving scheme that adopts low-temperature polycrystalline silicon and oxide thin-film transistors (LTPO TFTs) for mobile devices using active-matrix organic light-emitting diode (AMOLED) displays. The proposed pixel circuit and driving scheme provide uniform luminance and render flicker invisible at variable refresh rates (VRRs) from 1 to 120 Hz. Using the proposed pixel circuit with extended compensation time (tCOMP) improves the luminance uniformity at a high-frame rate. The proposed driving scheme applies a voltage to the driving TFTs (D-TFTs) higher than the programmed data voltage during the skip frame. This reduces the flicker caused by the hysteresis of D-TFTs during low-frame rate driving. A 6.0-inch quad high-definition (QHD) LTPO-based AMOLED display was fabricated using the new pixel circuit and driving scheme. Experimental results of the proposed pixel circuit show that the standard deviation of luminance was reduced from 0.056 to 0.008 by extending tCOMP from 2 to 8 µs. The flicker level was −51 dB, so there was no visual artifact during 1 Hz driving. A flicker-free LTPO-based AMOLED display with low power consumption is possible; driving can proceed in 1–120 Hz range.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"283 - 298"},"PeriodicalIF":3.7,"publicationDate":"2023-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"43230232","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-20DOI: 10.1080/15980316.2023.2203365
Chan-Hee Han, Tae-Hoon Choi, W. Kim, Seung-Won Oh
We demonstrate using a diffractive smart window with homogeneous-aligned (HA) liquid crystals (LCs) owing to the large spatial phase difference in all directions in the opaque state. The proposed grating cell had a high haze value (88.57%), which was 1.16 times higher than the previously reported vertically aligned (VA) grating cells because the proposed grating cell had a higher twist angle than what the VA grating cell had. Our proposed HA grating cell can be used in various smart window applications.
{"title":"Diffractive liquid crystal device for privacy window with a low operating voltage","authors":"Chan-Hee Han, Tae-Hoon Choi, W. Kim, Seung-Won Oh","doi":"10.1080/15980316.2023.2203365","DOIUrl":"https://doi.org/10.1080/15980316.2023.2203365","url":null,"abstract":"We demonstrate using a diffractive smart window with homogeneous-aligned (HA) liquid crystals (LCs) owing to the large spatial phase difference in all directions in the opaque state. The proposed grating cell had a high haze value (88.57%), which was 1.16 times higher than the previously reported vertically aligned (VA) grating cells because the proposed grating cell had a higher twist angle than what the VA grating cell had. Our proposed HA grating cell can be used in various smart window applications.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"249 - 254"},"PeriodicalIF":3.7,"publicationDate":"2023-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"42987268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-08DOI: 10.1080/15980316.2023.2205037
Ye-Seul Lee, Akeem Raji, Eun-Kyung Noh, Ji-Hyeon Yoon, Baeksang Sung, Akpeko Gasonoo, Jang-Sik Lee, Min‐Hoi Kim, Y. Choi, Y. Shibasaki, Jae-Hyun Lee
The chemical and structural characteristics of solution-processed polymer with intrinsic microporosity (PIM) based on 9, 9-bis (4-hydroxyphenyl) fluorene (BHPF) film is investigated. A fully flexible and transparent PIM film exhibiting uniform and high transmittance of more than 90% within the visible light range is demonstrated. The stability of the PIM film is further demonstrated with relatively stable coefficient of thermal expansion (CTE) characteristics. Additionally, the film has high heat resistance that can withstand high-temperature processes at 250 °C. The PIM film exhibits a remarkably high glass transition temperature ( of 294.7 °C, indicating the thermal stability of the film at elevated temperatures. The PIM film also exhibits relatively high surface energy, low surface roughness ( ), and peak-to-valley values of 0.45 and 4.4 nm, respectively. This surface morphology confirms the PIM film’s superior characteristic in preventing short circuits or leakage in current paths in an organic electronic device. Finally, the PIM film is successfully tested as a substrate for a bottom-emitting organic light-emitting diode (OLED). The investigation has proven PIM film to be a good candidate to be adopted as a substrate in fabricating advanced organic electronic devices and next-generation displays.
{"title":"Structural characteristics of thermally advanced polymer with intrinsic microporosity for application as flexible OLED substrate","authors":"Ye-Seul Lee, Akeem Raji, Eun-Kyung Noh, Ji-Hyeon Yoon, Baeksang Sung, Akpeko Gasonoo, Jang-Sik Lee, Min‐Hoi Kim, Y. Choi, Y. Shibasaki, Jae-Hyun Lee","doi":"10.1080/15980316.2023.2205037","DOIUrl":"https://doi.org/10.1080/15980316.2023.2205037","url":null,"abstract":"The chemical and structural characteristics of solution-processed polymer with intrinsic microporosity (PIM) based on 9, 9-bis (4-hydroxyphenyl) fluorene (BHPF) film is investigated. A fully flexible and transparent PIM film exhibiting uniform and high transmittance of more than 90% within the visible light range is demonstrated. The stability of the PIM film is further demonstrated with relatively stable coefficient of thermal expansion (CTE) characteristics. Additionally, the film has high heat resistance that can withstand high-temperature processes at 250 °C. The PIM film exhibits a remarkably high glass transition temperature ( of 294.7 °C, indicating the thermal stability of the film at elevated temperatures. The PIM film also exhibits relatively high surface energy, low surface roughness ( ), and peak-to-valley values of 0.45 and 4.4 nm, respectively. This surface morphology confirms the PIM film’s superior characteristic in preventing short circuits or leakage in current paths in an organic electronic device. Finally, the PIM film is successfully tested as a substrate for a bottom-emitting organic light-emitting diode (OLED). The investigation has proven PIM film to be a good candidate to be adopted as a substrate in fabricating advanced organic electronic devices and next-generation displays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"263 - 271"},"PeriodicalIF":3.7,"publicationDate":"2023-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46349448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-03DOI: 10.1080/15980316.2023.2206026
Byeong-Yong Kim, Taesu Kim, Hyeon‐Jeong Suk
ABSTRACT This study exploits an optimal display brightness for watching television in the dark. Two experiments were carried out in a dark room, and static and moving images were tested in each experiment. In Experiment I, three different, full-screen color images were presented with brightness levels ranging from 20 to 400 nit. A total of 23 college students assessed each stimulus' degree of visual comfort. Experiment II was conducted with 31 participants, and six videos with a range of brightness from 20 to 500 nit were shown. As a result, when watching the static image, the participants' assessments were almost the same among stimuli. However, when watching a video, the characteristics of the stimuli made the evaluation vary. This study provides empirical evidence and estimations of visual comfort based on display luminance that should be considered when designing for more comfortable viewing in a dark environment.
{"title":"Comfortable brightness of watching television in the dark","authors":"Byeong-Yong Kim, Taesu Kim, Hyeon‐Jeong Suk","doi":"10.1080/15980316.2023.2206026","DOIUrl":"https://doi.org/10.1080/15980316.2023.2206026","url":null,"abstract":"ABSTRACT This study exploits an optimal display brightness for watching television in the dark. Two experiments were carried out in a dark room, and static and moving images were tested in each experiment. In Experiment I, three different, full-screen color images were presented with brightness levels ranging from 20 to 400 nit. A total of 23 college students assessed each stimulus' degree of visual comfort. Experiment II was conducted with 31 participants, and six videos with a range of brightness from 20 to 500 nit were shown. As a result, when watching the static image, the participants' assessments were almost the same among stimuli. However, when watching a video, the characteristics of the stimuli made the evaluation vary. This study provides empirical evidence and estimations of visual comfort based on display luminance that should be considered when designing for more comfortable viewing in a dark environment.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"273 - 281"},"PeriodicalIF":3.7,"publicationDate":"2023-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"47182653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-05-03DOI: 10.1080/15980316.2023.2203366
Young-Jun Ann, Seung-Yeol Lee
Computer-generated holography has been anticipated in augmented reality (AR) since it can fully provide multi-depth 3D information to users, but speckle noises are often accompanied as one of the most significant degradation factors. Since complex amplitude encoding can suppress speckle noises, applying double-phase encoding to a lensless holographic projection system using a double-step Fresnel diffraction (DSF) algorithm has been reported to reduce those noises. However, a single filtering focus at a virtual focal plane might significantly reduce the projection region compared to the maximum diffraction bandwidth of the spatial light modulator. In this paper, we applied multiple foci for the focal plane of the DSF method with off-axis phase encoding, which can expand the projection region and is applicable to display multi-depth images with DSF. Numerical analysis conducted for image quality compared with conventional single focus DSF algorithm shows that the speckle performance does not degrade so much as the number of foci increase. We expect the proposed method to be useful for holographic projection optical systems such as AR head-up display.
{"title":"Applying multi-focus filtering plane in double-step Fresnel diffraction method for enhanced holographic projection region","authors":"Young-Jun Ann, Seung-Yeol Lee","doi":"10.1080/15980316.2023.2203366","DOIUrl":"https://doi.org/10.1080/15980316.2023.2203366","url":null,"abstract":"Computer-generated holography has been anticipated in augmented reality (AR) since it can fully provide multi-depth 3D information to users, but speckle noises are often accompanied as one of the most significant degradation factors. Since complex amplitude encoding can suppress speckle noises, applying double-phase encoding to a lensless holographic projection system using a double-step Fresnel diffraction (DSF) algorithm has been reported to reduce those noises. However, a single filtering focus at a virtual focal plane might significantly reduce the projection region compared to the maximum diffraction bandwidth of the spatial light modulator. In this paper, we applied multiple foci for the focal plane of the DSF method with off-axis phase encoding, which can expand the projection region and is applicable to display multi-depth images with DSF. Numerical analysis conducted for image quality compared with conventional single focus DSF algorithm shows that the speckle performance does not degrade so much as the number of foci increase. We expect the proposed method to be useful for holographic projection optical systems such as AR head-up display.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"239 - 248"},"PeriodicalIF":3.7,"publicationDate":"2023-05-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48418301","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-27DOI: 10.1080/15980316.2023.2204205
Taoyu Zou, Haksoon Jung, A. Liu, Soo-Kwan Kim, Youjin Reo, Taesu Choi, Yong‐Young Noh
Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based printable electronics.
{"title":"Charge transfer enabled by the p-doping of WSe2 for 2D material-based printable electronics","authors":"Taoyu Zou, Haksoon Jung, A. Liu, Soo-Kwan Kim, Youjin Reo, Taesu Choi, Yong‐Young Noh","doi":"10.1080/15980316.2023.2204205","DOIUrl":"https://doi.org/10.1080/15980316.2023.2204205","url":null,"abstract":"Here, we report the fabrication of high-performance printable WSe2 transistors via the doping of p-type FeCl3 molecules (hole mobility: ∼1.5 cm2 V−1 s−1; on/off ratio: ∼106). A complementary inverter is demonstrated with p-WSe2 and n-MoS2 transistors, which highlights its potential for application in future two-dimensional material-based printable electronics.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"255 - 261"},"PeriodicalIF":3.7,"publicationDate":"2023-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46477697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-04-09DOI: 10.1080/15980316.2023.2197564
Jihyung Kim, J. Ka, Ju Hong Park, Wooksung Kim
This paper presents a physical space design method for mixed reality-based immersive environments by improving the color rendering of optically visible head-mounted displays. In OST-HMD, the phenomenon that the light of the external environment is combined with the enhanced image occurs, which reduces the visibility of the content. Moreover, previous studies to solve this problem required additional optical components or performed only simple verification. Proposed physical space was designed using black curtains, blinds, low-reflection structures, and adjustable lighting. The physical space can be adapted to the intended use of the physical space through physical transitions for multiple users without additional optics. To verify the usefulness of this environment, we measured the color gamut and intensity spectrum in three experimental environments. Also, we analyzed the factors that change the color gamut according to the components and the surrounding environment. As a result, the color gamut improved by up to 4.7 times from 19.92% to 93.53% based on the environment and improved by up to 4.1 times from 21% to 86.29% depending on the location. The experimental results revealed that the presented method could reduce the factors that degrade the color gamut within all measurement locations and significantly improve the color gamut.
{"title":"Constructing physical space design for high color gamut in mixed reality environment","authors":"Jihyung Kim, J. Ka, Ju Hong Park, Wooksung Kim","doi":"10.1080/15980316.2023.2197564","DOIUrl":"https://doi.org/10.1080/15980316.2023.2197564","url":null,"abstract":"This paper presents a physical space design method for mixed reality-based immersive environments by improving the color rendering of optically visible head-mounted displays. In OST-HMD, the phenomenon that the light of the external environment is combined with the enhanced image occurs, which reduces the visibility of the content. Moreover, previous studies to solve this problem required additional optical components or performed only simple verification. Proposed physical space was designed using black curtains, blinds, low-reflection structures, and adjustable lighting. The physical space can be adapted to the intended use of the physical space through physical transitions for multiple users without additional optics. To verify the usefulness of this environment, we measured the color gamut and intensity spectrum in three experimental environments. Also, we analyzed the factors that change the color gamut according to the components and the surrounding environment. As a result, the color gamut improved by up to 4.7 times from 19.92% to 93.53% based on the environment and improved by up to 4.1 times from 21% to 86.29% depending on the location. The experimental results revealed that the presented method could reduce the factors that degrade the color gamut within all measurement locations and significantly improve the color gamut.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"227 - 237"},"PeriodicalIF":3.7,"publicationDate":"2023-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48680070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-19DOI: 10.1080/15980316.2023.2189079
J. Yu, Young-In Cho, Jaewook Lee, Kyung-Hyun Choi, Sang-Ho Lee
Area-selective atomic layer deposition (AS-ALD) has been studied as an alternative method for metal oxide ALD film patterning in the microelectronics industry. To perform AS-ALD, area-deactivation or -activation processes should be implemented in advance using selective surface modification through a photography-based lift-off process and printing techniques. This study introduces a novel approach for Al2O3 AS-ALD using inkjet-printed inhibition patterns. ALD-inhibition patterns with two-layer structures of fluorocarbon (FC) thin film and photoresist (PR) were patterned by inkjet printing. Low surface energy FC thin films were used to block the Al2O3 nucleation and growth during the ALD process, and PR was patterned to easily remove ALD-inhibition patterns using a lift-off process. To demonstrate AS-ALD, an Al2O3 thin film approximately 10 nm thick was deposited via an in-house built system with a multiple-slit gas source. The proposed AS-ALD method was evaluated for topological analysis using atomic force microscopy and surface composition analysis using a time of flight secondary ion mass spectrometry after Al2O3 deposition and a lift-off process. Finally, a 6 nm thick Al2O3 film was selectively patterned by the lift-off process using an inkjet-printed 1.28 μm thick FC-covered PR inhibition pattern.
{"title":"Area-selective atomic layer deposition of Al2O3 using inkjet-printed inhibition patterns and lift-off process","authors":"J. Yu, Young-In Cho, Jaewook Lee, Kyung-Hyun Choi, Sang-Ho Lee","doi":"10.1080/15980316.2023.2189079","DOIUrl":"https://doi.org/10.1080/15980316.2023.2189079","url":null,"abstract":"Area-selective atomic layer deposition (AS-ALD) has been studied as an alternative method for metal oxide ALD film patterning in the microelectronics industry. To perform AS-ALD, area-deactivation or -activation processes should be implemented in advance using selective surface modification through a photography-based lift-off process and printing techniques. This study introduces a novel approach for Al2O3 AS-ALD using inkjet-printed inhibition patterns. ALD-inhibition patterns with two-layer structures of fluorocarbon (FC) thin film and photoresist (PR) were patterned by inkjet printing. Low surface energy FC thin films were used to block the Al2O3 nucleation and growth during the ALD process, and PR was patterned to easily remove ALD-inhibition patterns using a lift-off process. To demonstrate AS-ALD, an Al2O3 thin film approximately 10 nm thick was deposited via an in-house built system with a multiple-slit gas source. The proposed AS-ALD method was evaluated for topological analysis using atomic force microscopy and surface composition analysis using a time of flight secondary ion mass spectrometry after Al2O3 deposition and a lift-off process. Finally, a 6 nm thick Al2O3 film was selectively patterned by the lift-off process using an inkjet-printed 1.28 μm thick FC-covered PR inhibition pattern.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"215 - 225"},"PeriodicalIF":3.7,"publicationDate":"2023-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"44991870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-03-08DOI: 10.1080/15980316.2023.2185563
E. Yu, S. Kim, Seojin Kang, Hyuck-Su Lee, S. Moon, Jongmo Lee, SeungBae An, Byung Seong Bae
A temperature sensor embedded in an In-Ga-Zn oxide (IGZO) TFT was evaluated after fabrication to facilitate monitoring of the temperature distribution on a thin-film transistor (TFT) array. Because the proposed temperature sensor uses the same material as the TFT, no additional process or material is required. Moreover, it can be used as a light shield layer because the temperature sensor is located on a TFT. The temperature sensor used in this study was serially connected to indium tin oxide and a metal. As the temperature increased to 120 °C, the output voltage of the temperature sensor increased to 176.6 mV. The sensitivity, hysteresis, and repeatability were 0.85 mV/°C, 3.56 %, and 0.04 %, respectively. The temperature sensor was integrated into an amorphous IGZO bottom-gate TFT. The TFT exhibited a field-effect mobility of 8.2 cm2V−1·s−1 and threshold voltage of 5.2 V. As the drain current increased from 300 µA to 1.1 mA, the temperature increased from 26 to 32.9 °C, and the output voltages of the temperature sensor augmented from 66 to 76 mV. The integrated temperature sensors enable us to measure the temperature distribution in a display panel and compensate for image deterioration due to increased temperature.
{"title":"Serially connected tantalum and amorphous indium tin oxide for sensing the temperature increase in IGZO thin-film transistor backplanes","authors":"E. Yu, S. Kim, Seojin Kang, Hyuck-Su Lee, S. Moon, Jongmo Lee, SeungBae An, Byung Seong Bae","doi":"10.1080/15980316.2023.2185563","DOIUrl":"https://doi.org/10.1080/15980316.2023.2185563","url":null,"abstract":"A temperature sensor embedded in an In-Ga-Zn oxide (IGZO) TFT was evaluated after fabrication to facilitate monitoring of the temperature distribution on a thin-film transistor (TFT) array. Because the proposed temperature sensor uses the same material as the TFT, no additional process or material is required. Moreover, it can be used as a light shield layer because the temperature sensor is located on a TFT. The temperature sensor used in this study was serially connected to indium tin oxide and a metal. As the temperature increased to 120 °C, the output voltage of the temperature sensor increased to 176.6 mV. The sensitivity, hysteresis, and repeatability were 0.85 mV/°C, 3.56 %, and 0.04 %, respectively. The temperature sensor was integrated into an amorphous IGZO bottom-gate TFT. The TFT exhibited a field-effect mobility of 8.2 cm2V−1·s−1 and threshold voltage of 5.2 V. As the drain current increased from 300 µA to 1.1 mA, the temperature increased from 26 to 32.9 °C, and the output voltages of the temperature sensor augmented from 66 to 76 mV. The integrated temperature sensors enable us to measure the temperature distribution in a display panel and compensate for image deterioration due to increased temperature.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"205 - 213"},"PeriodicalIF":3.7,"publicationDate":"2023-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45734721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2023-02-27DOI: 10.1080/15980316.2023.2165322
Seonyoung Yoon, Y. Kwak, Hyosun Kim
This study investigates the time course of changes in display color appearance according to changes in ambient lighting. Psychophysical experiments were conducted to observe brightness under lighting transitions in illuminance and the perceived white point under lighting transitions in correlated color temperatures. The result shows that significant change in the color appearance occurs immediately after ambient lighting changes. In addition, the initial change in color appearance depends on the lighting transition characteristics. The continuous change in color appearance was observed when ambient lighting was changed to brighter or lower CCT. On the other hand, a significant abrupt change at the initial stage of adaptation was observed when ambient lighting was changed to darker or higher CCT.
{"title":"Time-course analysis of change in display color-appearance based on ambient light change","authors":"Seonyoung Yoon, Y. Kwak, Hyosun Kim","doi":"10.1080/15980316.2023.2165322","DOIUrl":"https://doi.org/10.1080/15980316.2023.2165322","url":null,"abstract":"This study investigates the time course of changes in display color appearance according to changes in ambient lighting. Psychophysical experiments were conducted to observe brightness under lighting transitions in illuminance and the perceived white point under lighting transitions in correlated color temperatures. The result shows that significant change in the color appearance occurs immediately after ambient lighting changes. In addition, the initial change in color appearance depends on the lighting transition characteristics. The continuous change in color appearance was observed when ambient lighting was changed to brighter or lower CCT. On the other hand, a significant abrupt change at the initial stage of adaptation was observed when ambient lighting was changed to darker or higher CCT.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"24 1","pages":"147 - 158"},"PeriodicalIF":3.7,"publicationDate":"2023-02-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48933140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：