Pub Date : 2022-03-08DOI: 10.1080/15980316.2022.2039790
C. Yoon, Aram Moon, Heesun Yang, Jiwan Kim
We demonstrate the high efficiency of quantum dot light-emitting diodes (QLEDs) that consist of a mixed layer of SnO2 nanoparticles (NPs) and quantum dots (QDs). A stable mixture of SnO2 NPs and QDs is prepared in chlorobenzene and then applied to QLEDs with no separate electron transport layer (ETL). QLEDs with such a simplified structure produce a maximum luminance of 142,855 cd/m2, an EQE of 9.42%, and a current efficiency of 41.18 cd/A that result from the improved charge balance of the mixed layer. This produces one of the best device performances of QLEDs with a non-ZnO inorganic ETL, clearly indicating the remarkable promise of using SnO2 NPs as an inorganic ETL for QLEDs. Moreover, the reduction of fabrication steps in this solution-based process proves advantageous to next-generation display technology.
{"title":"Highly efficient electroluminescence devices with a mixed layer of SnO2 and colloidal quantum dots","authors":"C. Yoon, Aram Moon, Heesun Yang, Jiwan Kim","doi":"10.1080/15980316.2022.2039790","DOIUrl":"https://doi.org/10.1080/15980316.2022.2039790","url":null,"abstract":"We demonstrate the high efficiency of quantum dot light-emitting diodes (QLEDs) that consist of a mixed layer of SnO2 nanoparticles (NPs) and quantum dots (QDs). A stable mixture of SnO2 NPs and QDs is prepared in chlorobenzene and then applied to QLEDs with no separate electron transport layer (ETL). QLEDs with such a simplified structure produce a maximum luminance of 142,855 cd/m2, an EQE of 9.42%, and a current efficiency of 41.18 cd/A that result from the improved charge balance of the mixed layer. This produces one of the best device performances of QLEDs with a non-ZnO inorganic ETL, clearly indicating the remarkable promise of using SnO2 NPs as an inorganic ETL for QLEDs. Moreover, the reduction of fabrication steps in this solution-based process proves advantageous to next-generation display technology.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"193 - 199"},"PeriodicalIF":3.7,"publicationDate":"2022-03-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49608472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-10DOI: 10.1080/15980316.2022.2029778
Jongsu Oh, Jin-Ho Kim, Eun Kyo Jung, Jongsul Min, Hwarim Im, Yong-Sang Kim
In this study, we have investigated the operation robustness of a p-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT)-based micro light-emitting diode (µLED) pixel circuit adopting pulse width modulation (PWM) under circuit component fluctuations. The wavelength shift of µLEDs, depending on the current density, was suppressed by implementing PWM. The PWM pixel circuit controlled the emission time with constant µLED current in the simulated and measured results. In addition, the wavelength shift was suppressed below 0.48% within the 10-bit grayscale range. Furthermore, the component tolerance of the pixel circuit was investigated by simulating the error rate of µLED emission time with varying threshold voltage, mobility, subthreshold swing, and capacitance. The pixel circuit exhibited a robust operation with a maximum error rate of 4.0% under a component fluctuation of ±10%. Consequently, the µLED pixel circuit adopting PWM suppressed the wavelength shift of µLEDs and demonstrated robust circuit operation under component fluctuation.
{"title":"Investigation on operation robustness of p-type low-temperature polycrystalline silicon thin-film transistor-based micro light-emitting diode pixel circuit using pulse width modulation under component fluctuation","authors":"Jongsu Oh, Jin-Ho Kim, Eun Kyo Jung, Jongsul Min, Hwarim Im, Yong-Sang Kim","doi":"10.1080/15980316.2022.2029778","DOIUrl":"https://doi.org/10.1080/15980316.2022.2029778","url":null,"abstract":"In this study, we have investigated the operation robustness of a p-type low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT)-based micro light-emitting diode (µLED) pixel circuit adopting pulse width modulation (PWM) under circuit component fluctuations. The wavelength shift of µLEDs, depending on the current density, was suppressed by implementing PWM. The PWM pixel circuit controlled the emission time with constant µLED current in the simulated and measured results. In addition, the wavelength shift was suppressed below 0.48% within the 10-bit grayscale range. Furthermore, the component tolerance of the pixel circuit was investigated by simulating the error rate of µLED emission time with varying threshold voltage, mobility, subthreshold swing, and capacitance. The pixel circuit exhibited a robust operation with a maximum error rate of 4.0% under a component fluctuation of ±10%. Consequently, the µLED pixel circuit adopting PWM suppressed the wavelength shift of µLEDs and demonstrated robust circuit operation under component fluctuation.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"185 - 192"},"PeriodicalIF":3.7,"publicationDate":"2022-02-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41770344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-06DOI: 10.1080/15980316.2022.2029592
Jaipal Devesing Girase, Jairam Tagare, S. Mukherjee, Tanwistha Chakrabrati, A. Perumal, S. Vaidyanathan
Development of efficient deep blue fluorophore with Commission Internationale de l’Eclairage (CIE)y value <0.1 is of great importance for display technology. Herein, we designed and synthesized a thermally stable deep blue emissive material 3-(2-(4′′-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1,1′:4′,1″-terphenyl]-4-yl)-1H-phenanthro[9,10-d]imidazol-1-yl)benzonitrile (MCNPIBI) by integrating moderate donor and acceptor, namely, phenanthroimidazole (PI) and benzimidazole with cyanophenyl (-CN) group at N1 position of the PI to tune the CT component in the excited states. The systematic theoretical and photophysical study reveals the MCNPIBI with hybridized local and charge transfer (HLCT) excited states. Time-dependent density functional theory (TD-DFT) calculation suggests that the reverse intersystem crossing (RISC) process in MCNPIBI occurs from high-lying triplet states to a singlet state. Furthermore, the synthesized deep blue emissive materials were employed as dopants in multilayer organic light emitting diode (OLED) devices, thus resulting in deep-blue electroluminescence (EL) with an emission wavelength of 447 nm and CIE coordinates of (0.15, 0.08), which are close to the standard values for blue emitters, as suggested by NTSC (0.14, 0.08). The OLED device displays a maximum current efficiency of 2.78 cd A−1, a maximum power efficiency of 1.94 lm W−1, and a maximum external quantum efficiency of 3.69%, respectively. In addition, the OLED device has a low turn in voltage of 3.8 V.
开发国际照明委员会（CIE）y值＜0.1的高效深蓝色荧光团对显示技术具有重要意义。在此，我们设计并合成了一种热稳定的深蓝色发射材料3-（2-（4′′′-（1-苯基-1H-苯并[d]咪唑-2-基）-[1，1′：4′，1〃-三苯基]-4-基）-1H-菲并[9，10-d]咪唑-1-基）苄腈（MCNPIBI），通过整合适度的供体和受体，即，菲并咪唑（PI）和在PI的N1位置具有氰基苯基（-CN）基团的苯并咪唑，以将CT组分调谐到激发态。系统的理论和光物理研究揭示了具有杂化局域和电荷转移（HLCT）激发态的MCNPIBI。时间相关密度泛函理论（TD-DFT）计算表明，MCNPIBI中的反向系统间交叉（RISC）过程发生在从高位三重态到单线态的过程中。此外，合成的深蓝色发射材料被用作多层有机发光二极管（OLED）器件中的掺杂剂，从而产生发射波长为447的深蓝色电致发光（EL） nm和CIE坐标为（0.150.08），这接近NTSC建议的蓝色发射器的标准值（0.140.08）。OLED器件显示2.78的最大电流效率 cd A−1，最大功率效率为1.94 lm W−1，最大外量子效率分别为3.69%。此外，OLED器件具有3.8的低接通电压 五、
{"title":"Efficient deep blue (CIE ∼0.08) fluorophore-based benzimidazole with hybridized local and charge transfer (HLCT) excited state for OLEDs","authors":"Jaipal Devesing Girase, Jairam Tagare, S. Mukherjee, Tanwistha Chakrabrati, A. Perumal, S. Vaidyanathan","doi":"10.1080/15980316.2022.2029592","DOIUrl":"https://doi.org/10.1080/15980316.2022.2029592","url":null,"abstract":"Development of efficient deep blue fluorophore with Commission Internationale de l’Eclairage (CIE)y value <0.1 is of great importance for display technology. Herein, we designed and synthesized a thermally stable deep blue emissive material 3-(2-(4′′-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1,1′:4′,1″-terphenyl]-4-yl)-1H-phenanthro[9,10-d]imidazol-1-yl)benzonitrile (MCNPIBI) by integrating moderate donor and acceptor, namely, phenanthroimidazole (PI) and benzimidazole with cyanophenyl (-CN) group at N1 position of the PI to tune the CT component in the excited states. The systematic theoretical and photophysical study reveals the MCNPIBI with hybridized local and charge transfer (HLCT) excited states. Time-dependent density functional theory (TD-DFT) calculation suggests that the reverse intersystem crossing (RISC) process in MCNPIBI occurs from high-lying triplet states to a singlet state. Furthermore, the synthesized deep blue emissive materials were employed as dopants in multilayer organic light emitting diode (OLED) devices, thus resulting in deep-blue electroluminescence (EL) with an emission wavelength of 447 nm and CIE coordinates of (0.15, 0.08), which are close to the standard values for blue emitters, as suggested by NTSC (0.14, 0.08). The OLED device displays a maximum current efficiency of 2.78 cd A−1, a maximum power efficiency of 1.94 lm W−1, and a maximum external quantum efficiency of 3.69%, respectively. In addition, the OLED device has a low turn in voltage of 3.8 V.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"151 - 162"},"PeriodicalIF":3.7,"publicationDate":"2022-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"45846755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-06DOI: 10.1080/15980316.2022.2029591
V. Saveljev, J. Son, Choonsik Yim, Gwanghee Heo
A three-dimensional (3D) cursor for autostereoscopic 3D displays was proposed. The cursor is based on voxel patterns. In the experiments, the cursor position is interactively controlled in 3D by a computer mouse with a scroll wheel. A computer program operates in the image plane of the 3D display directly without complicated geometric calculations. The results were verified in a 3D display with a parallax barrier and can be applied to other types of autostereoscopic displays.
{"title":"Three-dimensional interactive cursor based on voxel patterns for autostereoscopic displays","authors":"V. Saveljev, J. Son, Choonsik Yim, Gwanghee Heo","doi":"10.1080/15980316.2022.2029591","DOIUrl":"https://doi.org/10.1080/15980316.2022.2029591","url":null,"abstract":"A three-dimensional (3D) cursor for autostereoscopic 3D displays was proposed. The cursor is based on voxel patterns. In the experiments, the cursor position is interactively controlled in 3D by a computer mouse with a scroll wheel. A computer program operates in the image plane of the 3D display directly without complicated geometric calculations. The results were verified in a 3D display with a parallax barrier and can be applied to other types of autostereoscopic displays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"137 - 150"},"PeriodicalIF":3.7,"publicationDate":"2022-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41918529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-02-06DOI: 10.1080/15980316.2022.2029590
Ki Woo Kim, Heesook Lee, Hyun Jae Kim
We proposed a new channel edge doping (CED) technique for hump reduction in n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and validated it through experiments and technology computer-aided design (TCAD) simulations. The TCAD simulations indicate that the hump effect in LTPS TFTs is due to the high electron (e−) concentration (∼1016 cm−3) induced by an enhanced electric field (e-field) at the channel edge region along the width direction. In order to reduce the hump effect, we focused on decreasing the e− concentration at the channel edge. The CED process led to the selective control of the e− concentration at the channel edge. The decrease in the maximum e− concentration from 3.4 × 1016 to 2.9 × 1014 cm−3 at the channel edge using CED led to an effective reduction in the hump characteristic of LTPS TFTs. Furthermore, the CED process does not require any additional masks and is highly effective in hump reduction, rendering it beneficial for manufacturing active-matrix organic light-emitting diode displays.
{"title":"Novel channel edge doping for hump reduction in LTPS TFTs","authors":"Ki Woo Kim, Heesook Lee, Hyun Jae Kim","doi":"10.1080/15980316.2022.2029590","DOIUrl":"https://doi.org/10.1080/15980316.2022.2029590","url":null,"abstract":"We proposed a new channel edge doping (CED) technique for hump reduction in n-type low-temperature polycrystalline silicon (LTPS) thin-film transistors (TFTs) and validated it through experiments and technology computer-aided design (TCAD) simulations. The TCAD simulations indicate that the hump effect in LTPS TFTs is due to the high electron (e−) concentration (∼1016 cm−3) induced by an enhanced electric field (e-field) at the channel edge region along the width direction. In order to reduce the hump effect, we focused on decreasing the e− concentration at the channel edge. The CED process led to the selective control of the e− concentration at the channel edge. The decrease in the maximum e− concentration from 3.4 × 1016 to 2.9 × 1014 cm−3 at the channel edge using CED led to an effective reduction in the hump characteristic of LTPS TFTs. Furthermore, the CED process does not require any additional masks and is highly effective in hump reduction, rendering it beneficial for manufacturing active-matrix organic light-emitting diode displays.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"129 - 135"},"PeriodicalIF":3.7,"publicationDate":"2022-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"49287860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-01-02DOI: 10.1080/15980316.2022.2035835
H. Jang, Jun Yeob Lee, G. Baek, Jeonghun Kwak, Jaehyeung Park
The remarkable progress of virtual reality, augmented reality, quantum dot light-emitting diode, and organic light-emitting diode as next-generation displays has overcome the leadership of the liquid crystal display during the last two years. This paper discusses the key technological advancements and performance of these new-generation display devices.
{"title":"Progress in the development of the display performance of AR, VR, QLED and OLED devices in recent years","authors":"H. Jang, Jun Yeob Lee, G. Baek, Jeonghun Kwak, Jaehyeung Park","doi":"10.1080/15980316.2022.2035835","DOIUrl":"https://doi.org/10.1080/15980316.2022.2035835","url":null,"abstract":"The remarkable progress of virtual reality, augmented reality, quantum dot light-emitting diode, and organic light-emitting diode as next-generation displays has overcome the leadership of the liquid crystal display during the last two years. This paper discusses the key technological advancements and performance of these new-generation display devices.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"1 - 17"},"PeriodicalIF":3.7,"publicationDate":"2022-01-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41819999","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-31DOI: 10.1080/15980316.2021.2018058
Jihyung Kim, Seung-Won Oh, Jin-Young Choi, Sungeun Park, Wooksung Kim
This paper presents an optical see-through head-mounted display (OST-HMD) that can provide a highly immersive augmented reality (AR) environment. Because visibility of objects is degraded by external light and because projection optics cannot represent black color, the reality of AR content is reduced. To solve this problem, we adopted an additional transparent display to adjust the transmittance of exterior light. This adjustment is achieved using a guest–host liquid crystal (GHLC) to provide transparency in the initial state and opacity when voltage is applied. To verify the display’s usefulness, we measured ambient contrast ratio (ACR) and color gamut under various ambient light conditions after attaching the GHLC panel to the existing OST-HMD (Microsoft HoloLens). Under typical office illumination, use of the GHLC panel increased the ACR by 4.67 times, and the color gamut by 2.87 times compared to the OST-HMD without it. Under high illumination the panel increased the ACR by 1.54 times and the color gamut by 16.16 times. The proposed method significantly improved the ambient contrast ratio and color expression, and yielded a flexible way to customize existing OST-HMDs by adding a detachable display.
{"title":"Optical see-through head-mounted display including transmittance-variable display for high visibility","authors":"Jihyung Kim, Seung-Won Oh, Jin-Young Choi, Sungeun Park, Wooksung Kim","doi":"10.1080/15980316.2021.2018058","DOIUrl":"https://doi.org/10.1080/15980316.2021.2018058","url":null,"abstract":"This paper presents an optical see-through head-mounted display (OST-HMD) that can provide a highly immersive augmented reality (AR) environment. Because visibility of objects is degraded by external light and because projection optics cannot represent black color, the reality of AR content is reduced. To solve this problem, we adopted an additional transparent display to adjust the transmittance of exterior light. This adjustment is achieved using a guest–host liquid crystal (GHLC) to provide transparency in the initial state and opacity when voltage is applied. To verify the display’s usefulness, we measured ambient contrast ratio (ACR) and color gamut under various ambient light conditions after attaching the GHLC panel to the existing OST-HMD (Microsoft HoloLens). Under typical office illumination, use of the GHLC panel increased the ACR by 4.67 times, and the color gamut by 2.87 times compared to the OST-HMD without it. Under high illumination the panel increased the ACR by 1.54 times and the color gamut by 16.16 times. The proposed method significantly improved the ambient contrast ratio and color expression, and yielded a flexible way to customize existing OST-HMDs by adding a detachable display.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"121 - 127"},"PeriodicalIF":3.7,"publicationDate":"2021-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"41401323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-28DOI: 10.1080/15980316.2021.2018059
Hyeyoung Ha, Hayoung Lee, Inhye Heo, Young-Jun Seo, Hyosun Kim, Yongwoo Yi, Jaejoong Kwon, Changhee Lee
A wider array of color gamut and higher luminance are increasingly offered by displays to provide users with immersive content. However, in the latest displays available, it is difficult to predict image brightness because the extensively used color appearance model is made based on a color patch whose color appearance is not the same as that of an image on the display. Therefore, in this study, a method of predicting image brightness on a display depending on its color gamut by quantifying the Helmholtz–Kohlrausch (H–K) effect is proposed. A method for accurately measuring image luminance is also presented. To verify the performance of the proposed model, a brightness matching experiment is performed under two different color gamut sizes. The experimental results confirm that the image appears brighter with the increase in color gamut due to the H–K effect, demonstrating that the proposed prediction model exhibits desirable performance. The proposed brightness prediction model, which includes the image experience in the color range, delivers better image quality to users.
{"title":"Image-brightness prediction model for wide-color-gamut displays based on Helmholtz–Kohlrausch (H–K) effect","authors":"Hyeyoung Ha, Hayoung Lee, Inhye Heo, Young-Jun Seo, Hyosun Kim, Yongwoo Yi, Jaejoong Kwon, Changhee Lee","doi":"10.1080/15980316.2021.2018059","DOIUrl":"https://doi.org/10.1080/15980316.2021.2018059","url":null,"abstract":"A wider array of color gamut and higher luminance are increasingly offered by displays to provide users with immersive content. However, in the latest displays available, it is difficult to predict image brightness because the extensively used color appearance model is made based on a color patch whose color appearance is not the same as that of an image on the display. Therefore, in this study, a method of predicting image brightness on a display depending on its color gamut by quantifying the Helmholtz–Kohlrausch (H–K) effect is proposed. A method for accurately measuring image luminance is also presented. To verify the performance of the proposed model, a brightness matching experiment is performed under two different color gamut sizes. The experimental results confirm that the image appears brighter with the increase in color gamut due to the H–K effect, demonstrating that the proposed prediction model exhibits desirable performance. The proposed brightness prediction model, which includes the image experience in the color range, delivers better image quality to users.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"115 - 120"},"PeriodicalIF":3.7,"publicationDate":"2021-12-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"46906746","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-21DOI: 10.1080/15980316.2021.2011443
Kazuyori Oura, H. Wada, Masatoshi Koyama, T. Maemoto, S. Sasa
A bilayer thin-film transistor (TFT) structure with ZnO and Al-doped ZnO (AZO) was fabricated using a solution process. The film thickness and sintering atmosphere of ZnO and AZO were controlled and then evaluated by measuring their electrical characteristics. By changing the sintering atmosphere, carriers attributed to oxygen vacancies in the thin film increased. Moreover, the ZnO single-layer TFT sintered in N2 exhibited good electrical characteristics. In the ZnO/AZO bilayer TFT laminated with the ZnO sintered in N2 and high-resistance AZO thin films, electrical characteristics, such as the On/Off ratio and subthreshold swing, improved compared to those of the ZnO-TFT. The On/Off ratio of the ZnO/AZO-TFT using the AZO thin film sintered in an O2 atmosphere notably improved to 3.7 × 105 compared to that of the ZnO-TFT (1.7 × 104). In addition, the subthreshold swing in the ZnO/AZO-TFT was 0.36 V/dec, while the field-effect mobility was 2.2 × 10−1 cm2/Vs, thereby exhibiting the best electrical characteristics among the fabricated samples. According to the grazing-incidence X-ray diffraction measurement, the ZnO particle size and crystallinity of the ZnO/AZO bilayer were higher than those of the ZnO single layer. Therefore, improvement of the electrical characteristics was confirmed.
{"title":"Improved electrical performance of solution-processed zinc oxide-based thin-film transistors with bilayer structures","authors":"Kazuyori Oura, H. Wada, Masatoshi Koyama, T. Maemoto, S. Sasa","doi":"10.1080/15980316.2021.2011443","DOIUrl":"https://doi.org/10.1080/15980316.2021.2011443","url":null,"abstract":"A bilayer thin-film transistor (TFT) structure with ZnO and Al-doped ZnO (AZO) was fabricated using a solution process. The film thickness and sintering atmosphere of ZnO and AZO were controlled and then evaluated by measuring their electrical characteristics. By changing the sintering atmosphere, carriers attributed to oxygen vacancies in the thin film increased. Moreover, the ZnO single-layer TFT sintered in N2 exhibited good electrical characteristics. In the ZnO/AZO bilayer TFT laminated with the ZnO sintered in N2 and high-resistance AZO thin films, electrical characteristics, such as the On/Off ratio and subthreshold swing, improved compared to those of the ZnO-TFT. The On/Off ratio of the ZnO/AZO-TFT using the AZO thin film sintered in an O2 atmosphere notably improved to 3.7 × 105 compared to that of the ZnO-TFT (1.7 × 104). In addition, the subthreshold swing in the ZnO/AZO-TFT was 0.36 V/dec, while the field-effect mobility was 2.2 × 10−1 cm2/Vs, thereby exhibiting the best electrical characteristics among the fabricated samples. According to the grazing-incidence X-ray diffraction measurement, the ZnO particle size and crystallinity of the ZnO/AZO bilayer were higher than those of the ZnO single layer. Therefore, improvement of the electrical characteristics was confirmed.","PeriodicalId":16257,"journal":{"name":"Journal of Information Display","volume":"23 1","pages":"105 - 113"},"PeriodicalIF":3.7,"publicationDate":"2021-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"48513522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2021-12-09DOI: 10.1080/15980316.2021.1999338
Jongyoon Kim, Dae Hueng Lee, Jounho Lee, Jihyeon Janel Lee
We studied the optimization of viewing angle properties of the in-plane switching (IPS) liquid crystal display (LCD) for automotive applications. We studied the optical properties inside the automotive viewing zone (AVZ) with narrow vertical and wide horizontal viewing angle range defined in German OEM specifications. The average dark state transmittance (TRd) and contrast ratio (CR) of the IPS-LCD compensated with a + A and a + C plate could be enhanced by 2.5% and 0.8%, respectively, in the AVZ by inserting an additional -C plate. The uniformity of TRd and CR in the AVZ zone also improved by 39.3% and 24.9%, respectively. Enhancement of optical properties by the additional -C plate was also observed in the IPS-LCD compensated with a Z plate. On the other hand, the optical properties of the IPS-LCD compensated with a -B and a + C plate were optimal when R th of the existing + C plate is optimized for automotive displays.
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